Request to process LaAlO3 inside SNF
mdeal at stanford.edu
Tue Jan 11 10:49:06 PST 2005
It should fine as long as it came from a clean source. Do we know where
Chi-On got it or deposited it? -mike
At 10:46 AM 1/11/2005, Jim McVittie wrote:
>Here is some info I found on La2O3.
>La2O3 is of interest as a new hi k material so it is thought to be a Si
>device friendly material. Both La and its oxides have low vapor pressures
>so there should no vapor transport during a FGA step.
>La is of the most reactive of the rare-earth metals. It oxidises rapidly
>when exposed to air. Cold water attacks lanthanum slowly, and hot water
>attacks it much more rapidly. The metal reacts directly with elemental
>carbon, nitrogen, boron, selenium, silicon, phosphorus, sulphur, and with
>La2O3 has a melting point of 2307C and boiling point of 4200C. This means
>it is very stable will not easily decompose. Under stability in ts MSDS, I
>found the following:
> Stable: Stable.
> Conditions to Avoid: Protect from moisture.
> Materials to Avoid: Strong acids, Strong oxidizing agents Carbon dioxide.
> Its safety ratings are: Health -- 2, Flammability -- 0, Reactivity -- 1,
>"Chui, Chi On" wrote:
>>Im the Intel Researcher-in-Residence in SNF. I have some film stacks of
>>~1000 Å Al/~50 Å LaAlO3/Si and would like to perform some FGA in tylanfga
>>(in addition to standard litho). Could I anneal them in the backside of
>>the furnace? Thanks in advance! /Chi On
-------------- next part --------------
An HTML attachment was scrubbed...
More information about the specmat