Request to process LaAlO3 inside SNF

Jim McVittie mcvittie at
Wed Jan 12 10:31:13 PST 2005


I agree that it should not cause us problems as long it comes form a
clean source. I will ask him about his source.  Jim

Michael Deal wrote:

> It should fine as long as it came from a clean source.  Do we know
> where Chi-On got it or deposited it?    -mike
> At 10:46 AM 1/11/2005, Jim McVittie wrote:
>> Specmat,
>> Here is some info I found on La2O3.
>> La2O3 is of interest as a new hi k material so it is thought to be a
>> Si device friendly material. Both La and its oxides have low vapor
>> pressures so there should no vapor transport during a FGA step.
>> La is  of the most reactive of the rare-earth metals. It oxidises
>> rapidly when exposed to air. Cold water attacks lanthanum slowly,
>> and hot water attacks it much more rapidly. The metal reacts
>> directly with elemental carbon, nitrogen, boron, selenium, silicon,
>> phosphorus, sulphur, and with halogens.
>> La2O3 has a melting point of 2307C and boiling point of 4200C. This
>> means it is very stable will not easily decompose. Under stability
>> in ts MSDS, I found the following:
>>    Stable: Stable.
>>    Conditions to Avoid: Protect from moisture.
>>    Materials to Avoid: Strong acids, Strong oxidizing agents Carbon
>> dioxide.
>>  Its safety ratings are: Health -- 2, Flammability -- 0, Reactivity
>> -- 1,
>> "Chui, Chi On" wrote:
>> > Dear All,
>> > I’m the Intel Researcher-in-Residence in SNF. I have some film
>> > stacks of ~1000 Å Al/~50 Å LaAlO3/Si and would like to perform some
>> > FGA in tylanfga (in addition to standard litho). Could I anneal
>> > them in the backside of the furnace? Thanks in advance! /Chi On
-------------- next part --------------
An HTML attachment was scrubbed...
URL: <>
-------------- next part --------------
A non-text attachment was scrubbed...
Name: mcvittie.vcf
Type: text/x-vcard
Size: 422 bytes
Desc: Card for Jim McVittie
URL: <>

More information about the specmat mailing list