Request to process LaAlO3 inside SNF
mdeal at stanford.edu
Thu Jan 13 10:18:29 PST 2005
I agree. -mike
At 09:19 AM 1/13/2005, Jim McVittie wrote:
>Chi On has given me the details on where his LaAlO3 is coming from,
>however I am suppose to keep the source confidential. It is from a clean
>and should give us no problems. I say let him use the FGA tube.
>Michael Deal wrote:
>>It should fine as long as it came from a clean source. Do we know where
>>Chi-On got it or deposited it? -mike
>>At 10:46 AM 1/11/2005, Jim McVittie wrote:
>>>Here is some info I found on La2O3.
>>>La2O3 is of interest as a new hi k material so it is thought to be a Si
>>>device friendly material. Both La and its oxides have low vapor
>>>pressures so there should no vapor transport during a FGA step.
>>>La is of the most reactive of the rare-earth metals. It oxidises
>>>rapidly when exposed to air. Cold water attacks lanthanum slowly, and
>>>hot water attacks it much more rapidly. The metal reacts directly with
>>>elemental carbon, nitrogen, boron, selenium, silicon, phosphorus,
>>>sulphur, and with halogens.
>>>La2O3 has a melting point of 2307C and boiling point of 4200C. This
>>>means it is very stable will not easily decompose. Under stability in ts
>>>MSDS, I found the following:
>>> Stable: Stable.
>>> Conditions to Avoid: Protect from moisture.
>>> Materials to Avoid: Strong acids, Strong oxidizing agents Carbon
>>> Its safety ratings are: Health -- 2, Flammability -- 0, Reactivity -- 1,
>>>"Chui, Chi On" wrote:
>>>>Im the Intel Researcher-in-Residence in SNF. I have some film stacks
>>>>of ~1000 Å Al/~50 Å LaAlO3/Si and would like to perform some FGA in
>>>>tylanfga (in addition to standard litho). Could I anneal them in the
>>>>backside of the furnace? Thanks in advance! /Chi On
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