Request to process LaAlO3 inside SNF

Michael Deal mdeal at
Thu Jan 13 10:18:29 PST 2005

I agree.   -mike

At 09:19 AM 1/13/2005, Jim McVittie wrote:
>Chi On has given me the details on where his LaAlO3 is coming from, 
>however I am suppose to keep the source confidential. It is from a clean 
>and should give us no problems. I say let him use the FGA tube.
>     Jim
>Michael Deal wrote:
>>It should fine as long as it came from a clean source.  Do we know where 
>>Chi-On got it or deposited it?    -mike
>>At 10:46 AM 1/11/2005, Jim McVittie wrote:
>>>Here is some info I found on La2O3.
>>>La2O3 is of interest as a new hi k material so it is thought to be a Si 
>>>device friendly material. Both La and its oxides have low vapor 
>>>pressures so there should no vapor transport during a FGA step.
>>>La is  of the most reactive of the rare-earth metals. It oxidises 
>>>rapidly when exposed to air. Cold water attacks lanthanum slowly, and 
>>>hot water attacks it much more rapidly. The metal reacts directly with 
>>>elemental carbon, nitrogen, boron, selenium, silicon, phosphorus, 
>>>sulphur, and with halogens.
>>>La2O3 has a melting point of 2307C and boiling point of 4200C. This 
>>>means it is very stable will not easily decompose. Under stability in ts 
>>>MSDS, I found the following:
>>>    Stable: Stable.
>>>    Conditions to Avoid: Protect from moisture.
>>>    Materials to Avoid: Strong acids, Strong oxidizing agents Carbon 
>>> dioxide.
>>>  Its safety ratings are: Health -- 2, Flammability -- 0, Reactivity -- 1,
>>>"Chui, Chi On" wrote:
>>>>Dear All,
>>>>I’m the Intel Researcher-in-Residence in SNF. I have some film stacks 
>>>>of ~1000 Å Al/~50 Å LaAlO3/Si and would like to perform some FGA in 
>>>>tylanfga (in addition to standard litho). Could I anneal them in the 
>>>>backside of the furnace? Thanks in advance! /Chi On
-------------- next part --------------
An HTML attachment was scrubbed...
URL: <>

More information about the specmat mailing list