MSSQ Spin-on Oxide into Lam ETcher
mtang at snf.stanford.edu
Tue Mar 1 09:26:45 PST 2005
I agree, let's OK this. This would be a really good resist to have (is
this expected to perform like HSQ?) Is there a chance he will be able
to share any of his data?
Jim McVittie wrote:
>I am working with Rohit Shenoy to see how well poly-Methylsilsesquioxane
>(MSSQ) holds up in the Lam etch for Si etching. The MSSQ to used is a
>semiconductor grade spin-on low-k material. It will applied to SNF wafers
>at the IBM Almaden cleanroom. MSSQ is a C-containing variant of SiO2. My
>interest is to see if it can be used as a transfer layer under e-beam
>resist since it should have a much higher selectivity than PMMA or Zap.
>For his need Rohit would like to follow the Lam step with the std post
>etch 50:1 HF dip in wbnonmetal to remove the deposition from the poly etch
>step. This step could be done in the general wet bench if there is a
>concern about putting MSSQ in the HF tank.
>I do not see any problem putting semiconductor clean MSSQ into the Lam.
>I also do not see a problem in putting it into the HF tank in wbnonmetal.
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA 94305
mtang at stanford.edu
More information about the specmat