MSSQ Spin-on Oxide into Lam ETcher

Mary Tang mtang at
Tue Mar 1 09:26:45 PST 2005

I agree, let's OK this.  This would be a really good resist to have (is 
this expected to perform like HSQ?)  Is there a chance he will be able 
to share any of his data?


Jim McVittie wrote:

>I am working with Rohit Shenoy to see how well poly-Methylsilsesquioxane
>(MSSQ) holds up in the Lam etch for Si etching. The MSSQ to used is a
>semiconductor grade spin-on low-k material. It will applied to SNF wafers
>at the IBM Almaden cleanroom.  MSSQ is a C-containing variant of SiO2. My
>interest is to see if it can be used as a transfer layer under e-beam
>resist since it should have a much higher selectivity than PMMA or Zap.  
>For his need Rohit would like to follow the Lam step with the std post
>etch 50:1 HF dip in wbnonmetal to remove the deposition from the poly etch
>step. This step could be done in the general wet bench if there is a
>concern about putting MSSQ in the HF tank.
>I do not see any problem putting semiconductor clean MSSQ into the Lam. 
>I also do not see a problem in putting it into the HF tank in wbnonmetal. 
>	Jim 

Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
mtang at

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