MSSQ Spin-on Oxide into Lam ETcher

[Jim McVittie]

Mary,

Rohit is looking into how much info he can share on his MSSQ processing.

	Jim  

On Tue, 1 Mar 2005, Mary Tang wrote:

> I agree, let's OK this.  This would be a really good resist to have (is 
> this expected to perform like HSQ?)  Is there a chance he will be able 
> to share any of his data?
> 
> Mary
> 
> Jim McVittie wrote:
> 
> >I am working with Rohit Shenoy to see how well poly-Methylsilsesquioxane
> >(MSSQ) holds up in the Lam etch for Si etching. The MSSQ to used is a
> >semiconductor grade spin-on low-k material. It will applied to SNF wafers
> >at the IBM Almaden cleanroom.  MSSQ is a C-containing variant of SiO2. My
> >interest is to see if it can be used as a transfer layer under e-beam
> >resist since it should have a much higher selectivity than PMMA or Zap.  
> >For his need Rohit would like to follow the Lam step with the std post
> >etch 50:1 HF dip in wbnonmetal to remove the deposition from the poly etch
> >step. This step could be done in the general wet bench if there is a
> >concern about putting MSSQ in the HF tank.
> >
> >I do not see any problem putting semiconductor clean MSSQ into the Lam. 
> >I also do not see a problem in putting it into the HF tank in wbnonmetal. 
> >
> >	Jim 
> >
> >
> >  
> >
> 
> 
> 

-- 
--------------------------------------------------------------
Jim McVittie, Ph.D.    			Senior Research Scientist 
Allen Center for Integrated Systems     Electrical Engineering
Stanford University             	jmcvittie at stanford.edu
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