Laser Annealing outside SNF

Mary Tang mtang at
Thu Mar 3 09:57:30 PST 2005

Hi Bipin --

Your request is approved.  Please do keep all wet processing 
(prefurnace/predep cleans and PRS/resist cleans) separate from the 
"clean" and "semiclean" wet stations.



Michael Deal wrote:

> Mary's recommendation sounds fine to me.    -mike
> At 09:42 AM 3/3/2005, Mary Tang wrote:
>> Hi all --
>> Bipin is really anxious to get going on this and would like an 
>> answer, as he is trying to determine whether he can send his wafers 
>> out for processing.... I am not sure how, but I think we missed this 
>> in our meeting on Tuesday (at least this wasn't discussed while I was 
>> there...) Was this covered afterward? Mahnaz does not have any notes 
>> on this.
>> My feeling on this is that the risk of cross-contamination in the 
>> gryphon, P5000 and FGA anneal is very low. The only possible risk is 
>> at any of the wet station cleans prior to any of these steps. My 
>> suggestion is that we ask that all cleans be done at wbgeneral in 
>> dedicated labware or at wbsilicide, provided all acids are 
>> drained/changed. Does anyone else have any strong opinions on this?
>> Thanks,
>> Mary
>> Bipin Rajendran wrote:
>>> Dear Specmat Members,
>>> I am trying to do a modified 410 process, that use laser annealing 
>>> for activating the source drain regions. I am planning to send my 
>>> wafers out to a company called AMBP Tech, and below is an email from 
>>> them telling me about their laser machine.
>>> My question is this: After I do the annealing, will I be allowed to 
>>> come back to the lab and continue with the remaining 410 processing 
>>> ie. Al deposition in gryphon, P5000 etch and FGA anneal? Or will I 
>>> have to look for alternate set of non-semi-clean equipments to do 
>>> these?
>>> AMBP Tech's core discipline is in thin film equipment and services 
>>> and we have used our thin film equipment, located in the same lab as 
>>> the excimer laser, to deposit various thin films that have been 
>>> subsequently processed in a clean room to yield working devices.
>>> Our applications laboratory environment is relatively clean (no 
>>> industrial processes are ongoing to produce large amounts of 
>>> particles), but it is not clean room controlled and the processing 
>>> will be done under normal conditions. We have not had any customers 
>>> that have wished to do further processing on the wafers after the 
>>> laser annealing, only material analysis.
>>> We have laser processed partially gold coated die previously, the 
>>> presence of the gold will not affect our ability to process the 
>>> wafers, though the gold coated part will not absorb many of the 
>>> 248nm photons and phase transformations of the gold or underlying 
>>> layers of the gold will have a phase change affected.
>>> Thanks very much,
>>> Bipin
>> -- 
>> Mary X. Tang, Ph.D.
>> Stanford Nanofabrication Facility
>> CIS Room 136, Mail Code 4070
>> Stanford, CA  94305
>> (650)723-9980
>> mtang at

Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
mtang at

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