Al2O3 - urgent

Mary Tang mtang at snf.stanford.edu
Fri Mar 18 13:58:41 PST 2005


Hi Mike --

I just spoke with Rhett. The clean results are from a commercial source 
that provides Al2O3 for electronics. The not-so-clean results are from 
an internal Intel research tool.

Mary

Michael Deal wrote:

> Rhett,
> What do Reactor 1 and Reactor 2 refer to? Two different samples from 
> two different sources? Why is there Ti and Fe in them? And Hf in one 
> of them? -mike
>
>
> At 01:41 PM 3/18/2005, Brewer, Rhett T wrote:
>
>> I have contamination data from another Al2O3 process that I wanted to 
>> bring into the semi-clean equipment group. There are actually two 
>> process from separate chambers.
>>
>> This film would go into tystar P-doped poly – 580C (3500A), P5000 
>> (poly etch, Al etch chambers), wbmetal for cleaning and resist strip, 
>> RTA 4108 (I think that is the number) for 700C, 2 min anneal, gryphon 
>> for Al coating, P5000 for etching Al, then tylan fga for 400C forming 
>> gas anneal (10 min).
>>
>> I apologize for requesting a quick response, but I have a process on 
>> hold waiting for the green light – I was only yesterday able to get a 
>> hold of this data. At the very least please let me know when I might 
>> have a semi-official response.
>>
>> Thank you.
>>
>> Regards,
>>
>> Rhett
>>
>>
>> Rhett Brewer
>> Intel Corporation
>> work: 408-765-8254
>> cell: 408-655-3448
>> rhett.t.brewer at intel.com <mailto:rhett.t.brewer at intel.com>
>>


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu





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