Al2O3 - urgent
mtang at snf.stanford.edu
Fri Mar 18 13:58:41 PST 2005
Hi Mike --
I just spoke with Rhett. The clean results are from a commercial source
that provides Al2O3 for electronics. The not-so-clean results are from
an internal Intel research tool.
Michael Deal wrote:
> What do Reactor 1 and Reactor 2 refer to? Two different samples from
> two different sources? Why is there Ti and Fe in them? And Hf in one
> of them? -mike
> At 01:41 PM 3/18/2005, Brewer, Rhett T wrote:
>> I have contamination data from another Al2O3 process that I wanted to
>> bring into the semi-clean equipment group. There are actually two
>> process from separate chambers.
>> This film would go into tystar P-doped poly – 580C (3500A), P5000
>> (poly etch, Al etch chambers), wbmetal for cleaning and resist strip,
>> RTA 4108 (I think that is the number) for 700C, 2 min anneal, gryphon
>> for Al coating, P5000 for etching Al, then tylan fga for 400C forming
>> gas anneal (10 min).
>> I apologize for requesting a quick response, but I have a process on
>> hold waiting for the green light – I was only yesterday able to get a
>> hold of this data. At the very least please let me know when I might
>> have a semi-official response.
>> Thank you.
>> Rhett Brewer
>> Intel Corporation
>> work: 408-765-8254
>> cell: 408-655-3448
>> rhett.t.brewer at intel.com <mailto:rhett.t.brewer at intel.com>
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA 94305
mtang at stanford.edu
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