New Film supplier
Brewer, Rhett T
rhett.t.brewer at intel.com
Mon Mar 28 11:27:55 PST 2005
Specmat,
Thank you for taking a look at my Al2O3 film. Unless I am told otherwise, I will begin growing Al2O3 (these films will not hit the fab until ~Friday) and will follow the requirements submitted by Ed Myers for processing the Al2O3 at SNF.
I have included below ICPS from another chamber that I would like to use as an Al2O3 film source in the future. My schedule calls for running wafers in this chamber (Al2O3 growth) is about 2 weeks. The results below are for an SiO2 film, but the Al2O3 shares gas lines and an electronics grade TMA is the Aluminum precursor source. I am trying to avoid the urgency that I have had recently.
The films grown in the chamber below will experience the processing proposed before:
This film would go into tystar P-doped poly - 580C (3500A), P5000 (poly
>etch, Al etch chambers), wbmetal for cleaning and resist strip, RTA 4108
>(I think that is the number) for 700C, 2 min anneal, gryphon for Al
>coating, P5000 for etching Al, then tylan fga for 400C forming gas anneal
>(10 min).
Because these films are cleaner than the current ones, I would hope to be able to use wbmetal instead of my own beakers.
Thank you for your involvement.
Regards,
Rhett
See the ICP-MS results
SURFACE CONCENTRATION ( x 1010 atoms/cm2)
Wafer Size = 8 inch
Method
Detection Limits
120Å SiO2
Test Wafer
1.
Aluminum
(Al)
0.3
15
2.
Calcium
(Ca)
0.2
10
3.
Chromium
(Cr)
0.1
63
4.
Copper
(Cu)
0.05
0.55
5.
Iron
(Fe)
0.1
2.3
6.
Magnesium
(Mg)
0.3
4.0
7.
Nickel
(Ni)
0.05
0.70
8.
Potassium
(K )
0.2
6.7
9.
Sodium
(Na)
0.2
9.9
10.
Titanium
(Ti)
0.1
2.8
11.
Zinc
(Zn)
0.06
0.85
Rhett Brewer
Intel Corporation
work: 408-765-8254
cell: 408-655-3448
rhett.t.brewer at intel.com <mailto:rhett.t.brewer at intel.com>
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