From mtang at snf.stanford.edu Mon May 2 14:54:22 2005 From: mtang at snf.stanford.edu (Mary Tang) Date: Mon, 02 May 2005 14:54:22 -0700 Subject: Requesting permission to use alumina as substrate in tylanbpsg In-Reply-To: <7DBB1E23E1E1FA46994AF9E005D97262E597F3@ms08.mse3.exchange.ms> References: <7DBB1E23E1E1FA46994AF9E005D97262E597F3@ms08.mse3.exchange.ms> Message-ID: <4276A18E.1070207@snf.stanford.edu> Hi Stephanie -- The main concerns about processing non-standard materials in our LPCVD furnace is the possibility of cross-contamination. If you could possibly acquire elemental analysis on the alumina, this would be very helpful for allowing the SpecMat committee determine whether there is a likelihood of contamination. We would also like a detailed process flow -- in particular, what kind of pre-deposition cleans and any post-deposition processing you may require. What are the dimensions of your alumina? Finally, would it be possible to use PECVD dielectrics instead of LP glass? The reason I ask is that we have a PECVD system (STS) which can accomodate a broad range of substrate sizes, and is "gold-contaminated" and therefore can be used without an awful lot of in-depth consideration of trace contaminants. The STS cannot do doped materials, but can be used to deposit oxides, nitrides, and oxynitrides of varying compositions and levels of stress. Mary Oberg, Stephanie wrote: >Hi Mary - > >Thanks very much for your prompt response. We will use only the "gold" >Dektak. > >In addition to metrology, we find that we have a need for doing LPCVD of >PSG or BPSG on alumina ONLY (not on Si/Al). Would there be any concerns >about using alumina as a substrate in tylanbpsg? > >Thanks! > >Stephanie Oberg >(408) 566-1468 > >-----Original Message----- >From: Mary Tang [mailto:mtang at snf.stanford.edu] >Sent: Tuesday, April 26, 2005 7:56 AM >To: Oberg, Stephanie >Cc: SpecMat at snf.stanford.edu; Shi, Daniel; Lan Zhang >Subject: Re: Measure alumina and/or Si/Al substrates on the Dektak? > >Hello Stephanie -- > >Since these are pretty inert, they should be OK to measure on the gold >dektak system (not the "clean" one). Please be aware that the dektak has > >some measurement limitations -- check with Uli or one of the other >process staff members about your measurement precision needs. > >Mary > >Oberg, Stephanie wrote: > > > >>Hi there SpecMat committee - >> >>I am a new user of SNF and am interested in doing some substrate >>measurements: roughness, etc. Is it permitted to use alumina or Si/Al >>substrates for this? >> >>1) ALUMINA: It is 99.6% pure tapecast alumina ceramic, highfired and >>polished to about 20 microinch (0.5 micron) on back and 1-2 microinch >>(50 nm) on front. See Kyocera pdf attached. >> >>2) SI/AL ALLOY: Our other substrate to be used in the future is Osprey >> >> > > > >>Si/Al alloy, known as CE-7. Please see Osprey attached PDF. >> >>Thanks for your help! >> >>Stephanie Oberg >> >>(408) 566-1468 >> >>soberg at collinear.com >> >>Collinear Corporation >> >> 1. * Your contact information: * Name, Coral login, phone number, >> email address and who you work for (your PI or company.) >> * Stephanie Oberg, soberg, (408) 566-1468, soberg at collinear.com >> , Collinear Corporation * >> >> 2. * The chemical or material. * Please provide all common names, >> trade names, and CAS numbers where appropriate. Include an MSDS, >> if available; or provide the reason, if not. Make sure to >> include information for any new secondary chemicals (such as a >> developer for a new resist). Read the MSDSs as well as the >> Stanford Chemical Storage Groups >> and the >> Stanford Chemical Safety Data Base >> sections >> on this website to determine the Storage Group Identifier >> and Main >> Hazard Class >> of your >> chemical/material. >> *Alumina, alumina substrate, alumina thin film substrate, CAS >> 1344-28-1 (No MSDS because this is not a chemical, it is just a >> piece of non-toxic ceramic.). >> Si/Al alloy, no CAS number found . (No MSDS because this is not >> a chemical, it is just a piece of metal alloy.) >> >> * >> 3. * Vendor/manufacturer info: * address and phone number, website >> URL. >> *Alumina, Kyocera, >> >> >> >http://global.kyocera.com/prdct/fc/product/material/elec/index.html#c > > >> Kyocera Industrial Ceramics Corp. >> 2033 O'Toole Ave >> San Jose , CA 95131 >> Tel: 408-324-0161 >> Fax: 408-435-8327 >> >> Si/Al, Osprey Sandvik, >> Osprey Metals Ltd., >> Millands >> Neath. SA11 1NJ, UK >> http://www.ospreymetals.co.uk/low_expansion/contact_osprey.htm* >> >> 4. * Reason for request: * Please give serious thought to this. If >> you have any process information (application notes from the >> vendor, protocol from another lab, experimental methods section >> of an article), please include it, preferably as attachments. >> Ask yourself these questions: Is this the latest procedure? Are >> there newer/safer alternatives that will also work for my >> project? Will any of the current SNF approved chemicals and >> materials work for me? >> *Technical requirements of our product including >> thermomechanical match, compatibility with high temperature >> (>450 deg C) processing, etc.* >> >> 5. * Process Flow: * Please provide a detailed process flow >> description on how and where you proposed to use this chemical. >> This should include *all* * Lab equipment >> *to be used >> for processing your wafers once your new chemical or material >> has been used (even if your new material is a film that is >> removed, it may still pose potential contamination concerns.) >> Make sure to include wet benches. Please note that f the >> chemical/material is to be used in any the "clean" >> >> equipment, purity specifications will be needed. This is most >> important for chemicals/material that are not normally used for >> VLSI device fabrication. To be allowed into a "clean" tool >> , >> the material should MOS grade or better. >> * Currently only interested in metrology. * >> >> 6. * Amount and form. * How much will you bring in? Is it solid, >> powder or >> liquid? (Note: as a general rule, powders >> are not >> permitted in the cleanroom.) Do you need to mix it to use it? >> *Solid substrate disks, 4" - 8" in diameter.* >> >> 7. * Storage: * Will you be storing your chemical/material at SNF? >> If so, please note any potential reactivities (this should be on >> the MSDS). Storage groups >> A,B,D and >> L are stored in the yellow solvent cabinet in the furnace >> support area, while storage groups >> C, E, F >> and G are stored on top of one of the Pass-through Carts. Ensure >> your chemical container or material is properly labeled >> . If there is >> no available room, it must be stored by in the bulk storage >> area. You will then need to obtain it from receiving area >> personnel each time you want to use it and return it to them >> when you are finished using it (or each time you leave the lab). >> Note that there is no storage of chemicals/materials in the >> processing lab or at any wet bench. >> * No storage - will be hand carried when needed. Both materials >> can be stored in general storage areas such as warehouses and >> office supply cabinets. * >> >> 8. * DIsposal * : How will you dispose of any waste or excess >> chemical or material? In your discussions with experts and >> vendors, try to determine the best way to dispose of your spent >> chemicals and by-products. Please refer to the SNF Labmembers >> Safety Manual >> for the >> different methods of waste disposal that are available in the >> >> >lab. > > >> *Breakage is not foreseen, since both materials are tough, but >> if there is breakage, I will treat is the same as broken silicon >> and bag it for disposal in the Sharps box.* >> >> >> > > > > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mtang at snf.stanford.edu Wed May 4 08:18:42 2005 From: mtang at snf.stanford.edu (Mary Tang) Date: Wed, 04 May 2005 08:18:42 -0700 Subject: [Fwd: Special Materials Formal Request-Al(Mn)] Message-ID: <4278E7D2.5030305@snf.stanford.edu> -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- An embedded message was scrubbed... From: Betty Young Subject: Special Materials Formal Request-Al(Mn) Date: Wed, 4 May 2005 08:00:09 -0700 Size: 98138 URL: From mdeal at stanford.edu Wed May 4 08:46:52 2005 From: mdeal at stanford.edu (Michael Deal) Date: Wed, 04 May 2005 08:46:52 -0700 Subject: [Fwd: Special Materials Formal Request-Al(Mn)] In-Reply-To: <4278E7D2.5030305@snf.stanford.edu> References: <4278E7D2.5030305@snf.stanford.edu> Message-ID: <6.1.1.1.2.20050504083839.01d9fbc8@mdeal.pobox.stanford.edu> According to Sze's table, Mn has a deep level in Si at 0.54ev from conduction band, which would make it a prohibited material in SCT. Attached is a reference to this (although rather dated). However, occasionally these values are suspect. For example we allow Co in even though the same table shows a deep level for it as well (more recent work shows that Co is similar to Ni, Ti, etc.). I did a quick literature search and didn't find much either way regarding Mn. If Betty can come up with some literature results showing that Mn does not cause problems (leakage, etc.) in Si and/or doesnt' have a deep level, and is different from Au, Fe, and Cu, then it should be okay. -mike At 08:18 AM 5/4/2005, Mary Tang wrote: >-- >Mary X. Tang, Ph.D. >Stanford Nanofabrication Facility >CIS Room 136, Mail Code 4070 >Stanford, CA 94305 >(650)723-9980 >mtang at stanford.edu >http://snf.stanford.edu > > > >Return-Path: >Delivered-To: mtang at snf.stanford.edu >Received: (qmail 5590 invoked from network); 4 May 2005 15:00:11 -0000 >Received: from smtp2.stanford.edu (171.67.16.125) > by snf.stanford.edu with SMTP; 4 May 2005 15:00:11 -0000 >Received: from webmail4.Stanford.EDU (webmail4.Stanford.EDU [171.67.16.78]) > by smtp2.Stanford.EDU (8.12.11/8.12.11) with ESMTP id j44F0AKN004928; > Wed, 4 May 2005 08:00:10 -0700 >Received: (from web at localhost) > by webmail4.Stanford.EDU (8.12.11/8.12.11) id j44F09v8015496; > Wed, 4 May 2005 08:00:09 -0700 >Received: from 129.210.75.185 ([129.210.75.185]) > by webmail.stanford.edu (IMP) with HTTP > for ; Wed, 4 May 2005 > 08:00:09 -0700 >Message-ID: <1115218809.4278e379a389e at webmail.stanford.edu> >Date: Wed, 4 May 2005 08:00:09 -0700 >From: Betty Young >To: mtang at stanford.edu >Cc: bayoung at stanford.edu, byoung at scu.edu >Subject: Special Materials Formal Request-Al(Mn) >MIME-Version: 1.0 >Content-Type: multipart/mixed; >boundary="-MOQ11152188098beeb1c23e2e07a6ec3c9f0515ce4dd5" >User-Agent: Internet Messaging Program (IMP) 3.2.7 >X-Authenticated-User: bayoung >X-Originating-IP: 129.210.75.185 > > > >Hi Mary, > >Yesterday, I tried to send the attached formal request (MSWord document) to >the Special Materials Committee via the web-link on the CIS Materials page. >Unfortunately, the e-mail bounced back. So I am sending this to you >directly. Please forward the materials request to others on your committee. > >Thanks, >Betty Young (Physics) -------------- next part -------------- A non-text attachment was scrubbed... Name: Mn.deepdonor.pdf Type: application/pdf Size: 1197320 bytes Desc: not available URL: From shott at snf.stanford.edu Wed May 4 08:57:20 2005 From: shott at snf.stanford.edu (John Shott) Date: Wed, 04 May 2005 08:57:20 -0700 Subject: [Fwd: Special Materials Formal Request-Al(Mn)] In-Reply-To: <4278E7D2.5030305@snf.stanford.edu> References: <4278E7D2.5030305@snf.stanford.edu> Message-ID: <4278F0E0.1060100@snf.stanford.edu> Mary and specmat committee members: Did Betty mention why they aren't sputtering this material in the Balzers that we gave them? Is this a case where they are worried about compromising the quality of their films in the Balzers ... and would rather put ours at risk? Maybe there's a good reason but, since we bent over backwards for years to accommodate their use of the Balzers in a shared environment, it seems as if they should be able to answer that for us. Thanks, John From mtang at snf.stanford.edu Thu May 5 16:16:06 2005 From: mtang at snf.stanford.edu (Mary Tang) Date: Thu, 05 May 2005 16:16:06 -0700 Subject: [Fwd: Mobility data for Mn impurities in MBE devices] Message-ID: <427AA936.8090900@snf.stanford.edu> -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- An embedded message was scrubbed... From: Betty Young Subject: Mobility data for Mn impurities in MBE devices Date: Thu, 5 May 2005 13:01:35 -0700 Size: 435107 URL: From mdeal at stanford.edu Thu May 5 16:28:48 2005 From: mdeal at stanford.edu (Michael Deal) Date: Thu, 05 May 2005 16:28:48 -0700 Subject: [Fwd: Mobility data for Mn impurities in MBE devices] In-Reply-To: <427AA936.8090900@snf.stanford.edu> References: <427AA936.8090900@snf.stanford.edu> Message-ID: <6.0.1.1.2.20050505162549.01decc28@mdeal.pobox.stanford.edu> This paper says that Mn doesn't adversely affect GaAs/AlGaAs devices, but it doesn't say anything about Si devices (in which Mn reportedly intorduces a deep level). -mike At 04:16 PM 5/5/2005, Mary Tang wrote: >-- > >Message-ID: <1115323295.427a7b9f32904 at webmail.stanford.edu> >Date: Thu, 5 May 2005 13:01:35 -0700 >From: Betty Young >To: mtang at stanford.edu >Cc: atomada at stanford.edu, bayoung at stanford.edu, atomada at stanford.edu >Subject: Mobility data for Mn impurities in MBE devices >MIME-Version: 1.0 >Content-Type: multipart/mixed; >boundary="-MOQ1115323295da696f9072c77ac411e66f74d5fc7efd" >User-Agent: Internet Messaging Program (IMP) 3.2.7 >X-Authenticated-User: bayoung >X-Originating-IP: 171.64.58.143 > > >Hi Mary, > >In scanning the literature some more I discovered an important paper >(summarized below). > >K. Wagenhuber, et. al. "Influence of Mn Contamination on High Mobility >GaAs/AlGaAs Heterostructures" (arXiv:cond-mat/0404098 v2 6 April 2004) > >In particular, the authors of the paper show how Mn impurities introduced >into an MBE system (GaAs/AlGaAs samples grown at 635 deg C) had essentially >zero effect on the electron mobility of devices fabricated without >intentional inclusion of Mn impurities. This data is shown in Figure 2 of >the paper. The measured mobilities (cm^2/Vs) were of order 5e6 for the >undoped samples and 1e6 for the heavily doped samples (2%-5% Mn). Most >importantly, no memory effect was observed! > >I hope that the results will help your committee decide to allow 0.2% >Mn-doped Al in the SCT! > >If you wish additional data please let me know and I will try to provide >things as soon as possible. > >Thanks, > Betty > > > > > > >Content-Type: ; name="Mn_mobility_effect.pdf" >Content-Disposition: attachment; filename="Mn_mobility_effect.pdf" From mcvittie at snf.stanford.edu Thu May 5 17:23:20 2005 From: mcvittie at snf.stanford.edu (Jim McVittie) Date: Thu, 05 May 2005 17:23:20 -0700 Subject: [Fwd: Mobility data for Mn impurities in MBE devices] References: <427AA936.8090900@snf.stanford.edu> Message-ID: <427AB8F8.D10F25D8@snf.stanford.edu> Betty, My number one concern with Mn is its reported impurity level at 0.53 eV reported by Sze in 1969. Sze's data is not always accurate in that he reports that Ge in Si has a deep level at 0.5 eV, which has not been seen in SiGe devices. I would say the best thing you could do to get Mn into the SCT dep tool would be to see what levels other researchers have found for Mn in Si. Or better yet, find some Si device paper where Mn is contact with Si did not degarde carrier lifetime. Note that Goetzberger's gounp using capacitor studies in 1972 found that Mn had levels at 0.43 and 0.45eV. Since lifetime depends exponentially on the difference between the trap level and the mid-gap energy (0.55eV), going from 0.53eV to 0.45ev is a big deal. Regarding the effect of Mn on GaAs mobility, it has little or no meaning for Si devices. Jim Mary Tang wrote: > -- > Mary X. Tang, Ph.D. > Stanford Nanofabrication Facility > CIS Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu > > ------------------------------------------------------------------------ > Name: Mobility data for Mn impurities in MBE devices > Mobility data for Mn impurities in MBE devices Type: Outlook Express Mail Message (message/rfc822) > Encoding: 7bit > Download Status: Not downloaded with message -------------- next part -------------- A non-text attachment was scrubbed... Name: mcvittie.vcf Type: text/x-vcard Size: 422 bytes Desc: Card for Jim McVittie URL: From mcvittie at snf.stanford.edu Thu May 5 17:46:16 2005 From: mcvittie at snf.stanford.edu (Jim McVittie) Date: Thu, 05 May 2005 17:46:16 -0700 Subject: [Fwd: Mobility data for Mn impurities in MBE devices] References: <427AA936.8090900@snf.stanford.edu> <427AB8F8.D10F25D8@snf.stanford.edu> Message-ID: <427ABE58.BA42587A@snf.stanford.edu> Betty, There appears to be no question that Mn can form deep (0.51 and 0.50eV) trap levels in Si. See abstract below. I will talk to Peter Griffin about the likelyhood of forming the observed Mn-B complexes. Jim Deep impurity levels and diffusion coefficient of manganese in silicon H Nakashima, K Hashimoto - Cited by 1 - Web Search >/> Deep impurity levels and diffusion coefficient of manganese in silicon. [Journal of Applied Physics 69, 1440 (1991)]. H. Nakashima, K. Hashimoto. Abstract. ... Journal of Applied Physics, 1991 - link.aip.org - adsabs.harvard.edu Manganese-related deep levels in n- and p-type silicon have been investigated by deep level transient spectroscopy and Hall effect. Two electron traps of Ec?(0.12?0.01) eV and Ec?(0.41?0.01) eV, and a hole trap of Ev+(0.32?0.01) eV are found in manganese-doped silicon. The energy levels of these traps correspond to the transitions between four charge states (Mn?, Mn0, Mn + , Mn + + ) of interstitial manganese. An additional donor-type electron trap of Ec?(0.51?0.02) eV is observed in the n-type samples, and the trap can be tentatively assigned to substitutional manganese. Furthermore, an electron trap of Ec?(0.50?0.02) eV is observed for n + p junction samples diffused with manganese in boron-doped p-type silicon. The trap is attributed to the manganese-boron complex, which is formed owing to the pairing reaction of interstitial manganese and substitutional boron. From the investigation of the pairing reaction, the diffusion coefficient DMn of interstitial manganese is determined in the temperature range 14?90 ?C. It can be represented by the expression DMn=2.4?10?3 exp(?0.72/kT)cm2 s?1. Journal of Applied Physics is copyrighted by The American Institute of Physics. Other Papers: Diffusion of manganese in silicon studied by deep-level transient spectroscopy and tracer D Gilles, W Bergholz, W Schroeter - Cited by 2 - Web Search >/> Diffusion of manganese in silicon studied by deep-level transient spectroscopy and tracer measurements. [Journal of Applied Physics 59, 3590 (1986)]. ... Journal of Applied Physics, 1986 - link.aip.org - adsabs.harvard.edu Energy level of the 0 to+ charge transition of substitutional manganese in silicon R Czaputa, H Feichtinger, J Oswald, H Sitter, M - Cited by 2 - Find It @ Stanford - Web Search Energy Level of the 0 to + Charge Transition of Substitutional Manganese in Silicon. R. Czaputa, H. Feichtinger, and J. Oswald Institut ... Physical Review Letters, 1985 - link.aps.org - adsabs.harvard.edu - ncbi.nlm.nih.gov Jim McVittie wrote: > Betty, > > My number one concern with Mn is its reported impurity level at 0.53 eV reported by Sze in 1969. Sze's data is not > always accurate in that he reports that Ge in Si has a deep level at 0.5 eV, which has not been seen in SiGe > devices. I would say the best thing you could do to get Mn into the SCT dep tool would be to see what levels other > researchers have found for Mn in Si. Or better yet, find some Si device paper where Mn is contact with Si did not > degarde carrier lifetime. Note that Goetzberger's gounp using capacitor studies in 1972 found that Mn had levels at > 0.43 and 0.45eV. Since lifetime depends exponentially on the difference between the trap level and the mid-gap > energy (0.55eV), going from 0.53eV to 0.45ev is a big deal. > > Regarding the effect of Mn on GaAs mobility, it has little or no meaning for Si devices. > > Jim > > Mary Tang wrote: > > > -- > > Mary X. Tang, Ph.D. > > Stanford Nanofabrication Facility > > CIS Room 136, Mail Code 4070 > > Stanford, CA 94305 > > (650)723-9980 > > mtang at stanford.edu > > http://snf.stanford.edu > > > > ------------------------------------------------------------------------ > > Name: Mobility data for Mn impurities in MBE devices > > Mobility data for Mn impurities in MBE devices Type: Outlook Express Mail Message (message/rfc822) > > Encoding: 7bit > > Download Status: Not downloaded with message > > ------------------------------------------------------------------------ > Name: mcvittie.vcf > mcvittie.vcf Type: VCard (text/x-vcard) > Encoding: 7bit > Description: Card for Jim McVittie -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: mcvittie.vcf Type: text/x-vcard Size: 422 bytes Desc: Card for Jim McVittie URL: From shott at snf.stanford.edu Thu May 5 18:14:04 2005 From: shott at snf.stanford.edu (John Shott) Date: Thu, 05 May 2005 18:14:04 -0700 Subject: [Fwd: Mobility data for Mn impurities in MBE devices] In-Reply-To: <427ABE58.BA42587A@snf.stanford.edu> References: <427AA936.8090900@snf.stanford.edu> <427AB8F8.D10F25D8@snf.stanford.edu> <427ABE58.BA42587A@snf.stanford.edu> Message-ID: <427AC4DC.2060107@snf.stanford.edu> An HTML attachment was scrubbed... URL: From mdeal at stanford.edu Fri May 6 07:51:27 2005 From: mdeal at stanford.edu (Michael Deal) Date: Fri, 06 May 2005 07:51:27 -0700 Subject: [Fwd: Mobility data for Mn impurities in MBE devices] In-Reply-To: <427AC4DC.2060107@snf.stanford.edu> References: <427AA936.8090900@snf.stanford.edu> <427AB8F8.D10F25D8@snf.stanford.edu> <427ABE58.BA42587A@snf.stanford.edu> <427AC4DC.2060107@snf.stanford.edu> Message-ID: <6.1.1.1.2.20050506074905.01e265b0@mdeal.pobox.stanford.edu> Terman Engineering Library apparently has it: 1) TK7871.85 .D453 1998 1 STACKS (p. 475). if someone wants to get it. -mike At 06:14 PM 5/5/2005, John Shott wrote: >Jim, Betty, and Specmat members: > >Can anyone get hold of the 1998 MRS Symposium Proceedings? Apparently >this was published as Volume 510 of the Materials Research Society >Symposium Proceedings Series. > >In particular, I note the following abstract that claims to have studied >dark-current generation in CCD image sensors that, I would think, would be >particularly relevant to concerns on the impact of Mn on lifetime ... and >it is a reasonably current paper. > >2:15 PM D9.3 >DEEP-LEVEL TRAPS IN CCD IMAGE SENSORS. William C. McColgin, James P. >Lavine, Charles V. Stancampiano, and Jeffrey B. Russell, Eastman Kodak >Company, Microelectronics Technology Division, Rochester, NY. > >The ability of CCD image sensors to integrate weak signals for extended >times makes them highly sensitive detectors of charge-generating, >deep-level traps in silicon. Such traps add undesirable noise to imagers. >Using Dark Current Spectroscopy (DCS)1 one can investigate such traps at >concentrations as low as 107/cm3. In conjunction with deliberate >contamination experiments, we have characterized nearly a dozen distinct >dark-current-generating traps in silicon. These include iron, manganese, >nickel, cobalt, gold, platinum, and other traps as yet unidentified. >Physically, they range from large extended defects to isolated contaminant >atoms at substitutional or interstitial lattice sites. Electrically, their >dark current generation rates span the range from over 300,000 e-/s at >55?C to as few as 2 e-/s. The weakest of these lie as far as 0.27 eV off >mid-gap, but their generation rate and number contribute to the linewidth >of peaks from stronger traps in the dark current spectrum. The efficiency >of the gettering employed in the CCD manufacture can be gauged by >monitoring the levels of these traps in completed devices. >1. W.C. McColgin et al., MRS Symp. Proc. 378, 713 (1995). > >Certainly, based on this abstract, I would think that this paper would be >of great interest to us if we can get a copy of it. > >Talk to you later, > >John > -------------- next part -------------- An HTML attachment was scrubbed... URL: From bayoung at stanford.edu Fri May 6 08:50:30 2005 From: bayoung at stanford.edu (Betty Young) Date: Fri, 6 May 2005 08:50:30 -0700 Subject: [Fwd: Mobility data for Mn impurities in MBE devices] In-Reply-To: <6.1.1.1.2.20050506074905.01e265b0@mdeal.pobox.stanford.edu> References: <427AA936.8090900@snf.stanford.edu> <427AB8F8.D10F25D8@snf.stanford.edu> <427ABE58.BA42587A@snf.stanford.edu> <427AC4DC.2060107@snf.stanford.edu> <6.1.1.1.2.20050506074905.01e265b0@mdeal.pobox.stanford.edu> Message-ID: <1115394630.427b924616118@webmail.stanford.edu> Sounds like an important article. Unfortunately I am at SCU until late today so cannot get the book. I will see if I can get someone at Stanford in physics to go get it for us. Betty Quoting Michael Deal : > Terman Engineering Library apparently has it: > > 1) TK7871.85 .D453 1998 1 STACKS > (p. 475). > > if someone wants to get it. -mike > > > > > At 06:14 PM 5/5/2005, John Shott wrote: > >Jim, Betty, and Specmat members: > > > >Can anyone get hold of the 1998 MRS Symposium Proceedings? Apparently > >this was published as Volume 510 of the Materials Research Society > >Symposium Proceedings Series. > > > >In particular, I note the following abstract that claims to have studied > >dark-current generation in CCD image sensors that, I would think, would > be > >particularly relevant to concerns on the impact of Mn on lifetime ... > and > >it is a reasonably current paper. > > > >2:15 PM D9.3 > >DEEP-LEVEL TRAPS IN CCD IMAGE SENSORS. William C. McColgin, James P. > >Lavine, Charles V. Stancampiano, and Jeffrey B. Russell, Eastman Kodak > >Company, Microelectronics Technology Division, Rochester, NY. > > > >The ability of CCD image sensors to integrate weak signals for extended > >times makes them highly sensitive detectors of charge-generating, > >deep-level traps in silicon. Such traps add undesirable noise to > imagers. > >Using Dark Current Spectroscopy (DCS)1 one can investigate such traps at > >concentrations as low as 107/cm3. In conjunction with deliberate > >contamination experiments, we have characterized nearly a dozen distinct > >dark-current-generating traps in silicon. These include iron, manganese, > >nickel, cobalt, gold, platinum, and other traps as yet unidentified. > >Physically, they range from large extended defects to isolated > contaminant > >atoms at substitutional or interstitial lattice sites. Electrically, > their > >dark current generation rates span the range from over 300,000 e-/s at > >55?C to as few as 2 e-/s. The weakest of these lie as far as 0.27 eV off > >mid-gap, but their generation rate and number contribute to the > linewidth > >of peaks from stronger traps in the dark current spectrum. The > efficiency > >of the gettering employed in the CCD manufacture can be gauged by > >monitoring the levels of these traps in completed devices. > >1. W.C. McColgin et al., MRS Symp. Proc. 378, 713 (1995). > > > >Certainly, based on this abstract, I would think that this paper would > be > >of great interest to us if we can get a copy of it. > > > >Talk to you later, > > > >John > > > From shott at snf.stanford.edu Fri May 6 09:44:39 2005 From: shott at snf.stanford.edu (John Shott) Date: Fri, 06 May 2005 09:44:39 -0700 Subject: [Fwd: Mobility data for Mn impurities in MBE devices] In-Reply-To: <6.1.1.1.2.20050506074905.01e265b0@mdeal.pobox.stanford.edu> References: <427AA936.8090900@snf.stanford.edu> <427AB8F8.D10F25D8@snf.stanford.edu> <427ABE58.BA42587A@snf.stanford.edu> <427AC4DC.2060107@snf.stanford.edu> <6.1.1.1.2.20050506074905.01e265b0@mdeal.pobox.stanford.edu> Message-ID: <427B9EF7.5050309@snf.stanford.edu> An HTML attachment was scrubbed... URL: From response at cuoftexas.org Mon May 9 02:10:38 2005 From: response at cuoftexas.org (Credit Union of Texas) Date: Mon, 09 May 2005 05:10:38 -0400 Subject: Important Information about Your Home Banking Profile Message-ID: An HTML attachment was scrubbed... URL: From soberg at collinear.com Mon May 9 12:08:14 2005 From: soberg at collinear.com (Oberg, Stephanie) Date: Mon, 9 May 2005 15:08:14 -0400 Subject: Request to use alumina for oxide dep and reflow Message-ID: <7DBB1E23E1E1FA46994AF9E005D97262ECFC5A@ms08.mse3.exchange.ms> Hello SpecMat - Please see the attached Word doc, and supporting PDF doc, re my request to use alumina as a substrate at SNF. Thanks! Stephanie Oberg Director - Engineering Collinear Corporation 3930 Freedom Circle Suite 103 Santa Clara, CA 95054 P: 408.566.1468 F: 408.566.1480 This message and any attachments are solely for the use of intended recipients. They may contain privileged and/or confidential information, attorney work product or other information protected from disclosure. If you are not an intended recipient, you are hereby notified that you received this email in error, and that any review, dissemination, distribution or copying of this email and any attachment is strictly prohibited. If you have received this message in error, please notify the sender immediately and delete this message, any attachments and all copies. Thank you. -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image001.gif Type: image/gif Size: 2024 bytes Desc: image001.gif URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image002.gif Type: image/gif Size: 93 bytes Desc: image002.gif URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Alumina oxide dep SpecMat filing may 2005.doc Type: application/msword Size: 45568 bytes Desc: Alumina oxide dep SpecMat filing may 2005.doc URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: kyocera alumina A493 99.6%.pdf Type: application/octet-stream Size: 8048444 bytes Desc: kyocera alumina A493 99.6%.pdf URL: From edmyers at stanford.edu Mon May 9 16:01:12 2005 From: edmyers at stanford.edu (Ed Myers) Date: Mon, 09 May 2005 16:01:12 -0700 Subject: SpecMat Logsheet, May 10 Message-ID: <6.2.1.2.2.20050509160016.01fa4bc0@edmyers.pobox.stanford.edu> A non-text attachment was scrubbed... Name: SpecMat Logsheet.xls Type: application/octet-stream Size: 71168 bytes Desc: not available URL: From artyjamo at comcast.net Wed May 11 19:47:44 2005 From: artyjamo at comcast.net (artyjamo at comcast.net) Date: Thu, 12 May 2005 02:47:44 +0000 Subject: honeywell phos spin on dopant Message-ID: <051220050247.13393.4282C3D000032A4000003451220588911601030E06979B9D0E@comcast.net> Hello, I would like to ask for approval to bring in a new chemical. it is made by Honeywell, and it is a Diffusion technology phosphorus spin on dopant P-8 Series. The generic name for it is Phosphosilicate polymer in alcohol/ester solution. I want to dope some si substrates by spinning this stuff on in the Headway spinner. Hotplate baking it at 150 deg, do an RTA @ 700-1100 degrees in the table top gold contaminated RTA systems, and then strip it off in BOE. I gave Mahnaz a copy of the MSDS sheet . I have not been able to get a soft copy - sorry thanks -Aleta Jamora (ajamo) From mtang at snf.stanford.edu Thu May 12 08:45:42 2005 From: mtang at snf.stanford.edu (Mary Tang) Date: Thu, 12 May 2005 08:45:42 -0700 Subject: honeywell phos spin on dopant In-Reply-To: <051220050247.13393.4282C3D000032A4000003451220588911601030E06979B9D0E@comcast.net> References: <051220050247.13393.4282C3D000032A4000003451220588911601030E06979B9D0E@comcast.net> Message-ID: <42837A26.9090100@snf.stanford.edu> Hi Aleta -- Please provide the relevant information as outlined here: http://snf.stanford.edu/Materials/NewMatProc.html (i.e., Do you plan on storing this chemical at SNF? If so, how much and for how long? How do you plan to get rid of waste? How long it the hotplate bake? And where do you plan to strip it off in BOE? If you have purity spec on this (is it electronics grade?), that would be helpful.) Thanks, Mary artyjamo at comcast.net wrote: >Hello, > > > I would like to ask for approval to bring in a new chemical. it is made by Honeywell, and it is a Diffusion technology phosphorus spin on dopant P-8 Series. The generic name for it is Phosphosilicate polymer in alcohol/ester solution. I want to dope some si substrates by spinning this stuff on in the Headway spinner. Hotplate baking it at 150 deg, do an RTA @ 700-1100 degrees in the table top gold contaminated RTA systems, and then strip it off in BOE. > >I gave Mahnaz a copy of the MSDS sheet . I have not been able to get a soft copy - sorry > >thanks > >-Aleta Jamora > >(ajamo) > > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From artyjamo at comcast.net Thu May 12 15:33:47 2005 From: artyjamo at comcast.net (artyjamo at comcast.net) Date: Thu, 12 May 2005 22:33:47 +0000 Subject: honeywell phos spin on dopant Message-ID: <051220052233.5170.4283D9CA000C28CC00001432220588911601030E06979B9D0E@comcast.net> Hi Mary and Spec Mat. I would like to bring in a small 100 ml eyedropper bottle of this material and store it at SNF. From the MSDS sheet, it is a flammable liquid that would react with strong oxidants, halogens & alkalies. From the Stanford Material storage outline it looks like it should be stored in the left solvent cabinet Shelf 1 Storage group L, but basically I'll store it where you tell me to store it. My plan is to spin the material on Si wafers and hot plate bake it for 1 min at 150 degrees on the hotplates immediatly to the right of the Headway spinner. The 700-1100 degree for 30 seconds/ N2 RTA process would be done in the dirty, left table top RTA's. I need to get with Nancy to determine which bench to use for the BOE strip. For metrology I would like to use the 4 pt probe. For waste disposal, according to the SNF safety manual this can be disposed of in the standard solvent waste, which is located at WBSOLV or LITHOSOLV. It does not contain any Halogens, Halogen functional groups or any of the other prohibited metals or toxins listed in the manual. I'll check with Mahnaz to verify this. We did get a certificate of purity with this material. It is electronics grade. I'll make a copy of it and bring it to Mahnaz. -------------- Original message -------------- > Hi Aleta -- > > Please provide the relevant information as outlined here: > http://snf.stanford.edu/Materials/NewMatProc.html > > (i.e., Do you plan on storing this chemical at SNF? If so, how much and > for how long? How do you plan to get rid of waste? How long it the > hotplate bake? And where do you plan to strip it off in BOE? If you > have purity spec on this (is it electronics grade?), that would be helpful.) > > Thanks, > > Mary > > artyjamo at comcast.net wrote: > > >Hello, > > > > > > I would like to ask for approval to bring in a new chemical. it is made by > Honeywell, and it is a Diffusion technology phosphorus spin on dopant P-8 > Series. The generic name for it is Phosphosilicate polymer in alcohol/ester > solution. I want to dope some si substrates by spinning this stuff on in > the Headway spinner. Hotplate baking it at 150 deg, do an RTA @ 700-1100 > degrees in the table top gold contaminated RTA systems, and then strip it off in > BOE. > > > >I gave Mahnaz a copy of the MSDS sheet . I have not been able to get a soft > copy - sorry > > > >thanks > > > >-Aleta Jamora > > > >(ajamo) > > > > > > > -- > Mary X. Tang, Ph.D. > Stanford Nanofabrication Facility > CIS Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu > > -------------- next part -------------- An HTML attachment was scrubbed... URL: From edmyers at stanford.edu Tue May 17 09:52:05 2005 From: edmyers at stanford.edu (Ed Myers) Date: Tue, 17 May 2005 09:52:05 -0700 Subject: FGA of contaminated samples Message-ID: <6.2.1.2.2.20050517094739.01ed95b0@edmyers.pobox.stanford.edu> SpecMat Members, This is the request which initiated the discussion last week concerning FGA of "dirty" samples. My action item was to find out what it would take to add FGA capability to TYLAN4. According to Ted, this is not a simple solution. We run pure hydrogen to the tubes, and dilute in the recipe. The problem is the safety interlocks on the Tylans. We can not run hydrogen by itself without changing the firmware of the system. Any thoughts or comments? Has there been any decision on the topic of metals in the FGA? Especially those that were deposited in the Innotec or Ginzton, specifically W/Ti or Al. From shott at snf.stanford.edu Tue May 17 11:02:46 2005 From: shott at snf.stanford.edu (John Shott) Date: Tue, 17 May 2005 11:02:46 -0700 Subject: FGA of contaminated samples In-Reply-To: <6.2.1.2.2.20050517094739.01ed95b0@edmyers.pobox.stanford.edu> References: <6.2.1.2.2.20050517094739.01ed95b0@edmyers.pobox.stanford.edu> Message-ID: <428A31C6.40006@snf.stanford.edu> An HTML attachment was scrubbed... URL: From sharratt at stanford.edu Wed May 18 12:39:53 2005 From: sharratt at stanford.edu (Bree Sharratt) Date: Wed, 18 May 2005 12:39:53 -0700 Subject: New SNF Chemical (1 of 6): Gamma-Methacryloxypropyltrimethoxysilane Message-ID: <9B767B4A-C7D4-11D9-9982-000393D62BF4@stanford.edu> This is the first of 6 new materials requests. The first 3 and last 2 materials are all various types of adhesion promoters and the 4th is a catalyst. Here is a list, in email order, of the new materials: 1. Gamma-Methacryloxypropyltrimethoxysilane (this email) 2. Gamma-Glycidoxypropyltrimethoxysilane 3. Gamma-Aminopropyltrimethoxysilane 4. Propylamine 5. n-Propyl Titanate 6. n-Propyl Zirconate Since these are all being used for the same research project, the description of the project and method will not change in subsequent emails. Also note that the reference paper, applicable in method to the first four materials, is being attached to emails 1-4 to avoid (I hope) confusion. Please let me know if I need to further explain. Thanks, Bree Contact Information: Bree Sharratt coral login: bree office: 550-555C office phone: 650 725 2634 mobile phone: 650 283 4835 home phone: 408 252 5545 email: sharratt at stanford.edu PI: Prof. Reinhold H. Dauskardt (Materials Science & Engineering) Chemical: MSDS attached at the bottom of this email. Chemical name: Gamma-Methacryloxypropyltrimethoxysilane Product name: Silquest A-174 Silane SYNONYM: 2-Methylpropenoyloxypropyltrimethoxysilane SYNONYM: 2-Propenoic acid, 2-methyl-, 3-(trimethoxysilyl)propyl ester SYNONYM: 3-(Trimethoxysilyl)-1-propanol methacrylate SYNONYM: 3-Methacryloxypropyltrimethoxysilane SYNONYM: Dynasylan MEMO SYNONYM: G-METHACRYLOXYPROPYLTRIMETHOXYSILANE SYNONYM: Methacrylic acid, 3-(trimethoxysilyl)propyl ester SYNONYM: Silane, (3-hydroxypropyl)trimethoxy-, methacrylate SYNONYM: Silicone A-174 SYNONYM: Trimethoxysilyl-3-propylester kyseliny methakrylove SYNONYM: Union carbide A-174 SYNONYM: gamma Methacryloxypropyltrimethoxysilane SYNONYM: gamma-Methacryloxyproptrimethoxysilane SYNONYM: gamma-Methacryloxypropyltrimethoxysilane Components: Gamma-Methacryloxypropyltrimethoxysilane CAS# 2530-85-0 >98.0% Related silanes CAS# not established <2.0% Methanol CAS# 67-56-1 <0.2% Stanford Chemical Storage Group: D: Compatible Organic Acids, Flammables, and Poisons Main Hazard Class: Flammable Additional Hazards: Water reactive, Severely toxic, Combustible, Corrosive, Acid, Mucous membrane damage Secondary Chemicals Used with this Chemical: Methanol Propylamine (see email 4 of 6) Supplier Information: GE Silicones 3500 South State Route 2 Friendly, WV 26146 contact numbers: CHEMTREC (24 hours) 800 424 9300 GE Silicones Emergency Response (24 hours) 800 809 9998 For product safety inquiries 304 652 8446 For MSDS only 304 652 8155 Customer Service 800 523 5862 Reason for Request: Please note that this description is repeated in subsequent requests! My experimental work involves exploring the effects of environmental factors (temperature, relative humidity) and loading conditions (load type, mean stress, frequency) on debonding of SiNx/Epoxy/SiNx sandwich specimens. After observing some interesting behavior, I am investigating the effect that interface chemistry has on debonding. To accomplish this I will be spin-coating wafer pieces, which will be sectioned from 8 inch Si/SiO2/SiNx wafers (provided by LSI Logic, Inc) and etched in 50:1 HF, with 5 different adhesion promoting films. These adhesion promoters were specially selected to mimic certain functional groups and curing processes observed in other material systems. The following is a list of adhesion promoters that will be used in this study (note that the first three are similar to AP3000 and AP8000 already certified for use at SNF): Gamma-Methacryloxypropyltrimethoxysilane Gamma-Glycidoxypropyltrimethoxysilane Gamma-Aminopropyltrimethoxysilane n-Propyl Titanate n-Propyl Zirconate The first three adhesion promoters are silanes. Silane solutions will be prepared as follows: 1 part adhesion promoter will be dissolved in 100 parts deionized water, which will be diluted with 900 parts methanol to produce a 0.1 wt% solution. A few drops of propylamine will be added as a catalyst for the hydrolysis reaction (except for gamma-aminopropyltrimethoxysilane, which self-catalyzes). This method was used by Maura Jenkins (Stanford PhD 2002) and Jeff Snodgrass (Stanford PhD 2001) in preparing wafers with similar adhesion promoter films (AP3000 and AP8000) and is documented in "Important factors for silane adhesion promoter efficacy: surface coverage, functionality and chain length," also attached. The zirconate and titanate adhesion promoter solutions will be prepared to produce a 0.1 wt% solution using n-propanol. A few drops of water may be added to encourage hydrolysis, which will be determined iteratively based on the results of the spin-coated film. Process Flow: For wafer pieces (Si/thermal SiO2/PECVD SiNx): 1. wbsolvent - mix 1 part gamma-methacryloxypropyltrimethoxysilane:100 part deionized water:900 parts methanol:few drops of propylamine - bottle, cap and bag 2. wbgeneral - clean wafer pieces in 50:1 HF, water rinse and blow dry with N2, box 3. transport adhesion promoter solution, in cart, to laurel 4. laurel - spin-coat onto wafer pieces For glass slides (UV ozone cleaned and boxed in 550-553B): 1. sts - deposit 200 nm SiNx 2. wbsolvent - mix 1 part gamma-methacryloxypropyltrimethoxysilane:100 part deionized water:900 parts methanol:few drops of propylamine - bottle, cap and bag 3. transport adhesion promoter solution, in cart, to laure 4. laurel - spin-coat onto wafer pieces Amount and Form: gamma-methacryloxypropyltrimethoxysilane - 150 mL bottle, liquid form to be mixed with water, methanol and propylamine Storage: Storage group D: Compatible Organic Acids, Flammables, and Poisons Incompatible with (these may cause hazardous exothermic polymerization and/or decomposition): alkalis, metal salts, oxidizing agents, water, peroxides and other free radical initiators. Disposal: Liquid and solid (gloves, wipes, etc) waste will be collected locally, properly labeled and disposed of according procedures that will be determined with the safety committee. Attachments: 1. MSDS for gamma-methacryloxypropyltrimethoxysilane 2. ML Jenkins, RH Dauskardt, JC Bravman, "Important factors for silane adhesion promoter efficacy: surface coverage, functionality and chain length." J Adhsion Sci Technol, 18(13), 1497-1516 (2004). -------------- next part -------------- A non-text attachment was scrubbed... Name: not available Type: text/enriched Size: 6612 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Silquest A-174 silane.pdf Type: application/pdf Size: 163519 bytes Desc: not available URL: -------------- next part -------------- -------------- next part -------------- A non-text attachment was scrubbed... Name: not available Type: text/enriched Size: 47 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: ImportantFactorsSilaneAdhesionPromoterEfficacy-Jenkins(2004).pdf Type: application/pdf Size: 312562 bytes Desc: not available URL: From sharratt at stanford.edu Wed May 18 12:40:16 2005 From: sharratt at stanford.edu (Bree Sharratt) Date: Wed, 18 May 2005 12:40:16 -0700 Subject: New SNF Chemical (2 of 6): Gamma-Glycidoxypropyltrimethoxysilane Message-ID: This is the 2nd of 6 new materials requests. The first 3 and last 2 materials are all various types of adhesion promoters and the 4th is a catalyst. Here is a list, in email order, of the new materials: 1. Gamma-Methacryloxypropyltrimethoxysilane 2. Gamma-Glycidoxypropyltrimethoxysilane (this email) 3. Gamma-Aminopropyltrimethoxysilane 4. Propylamine 5. n-Propyl Titanate 6. n-Propyl Zirconate Since these are all being used for the same research project, the description of the project and method will not change in subsequent emails. Also note that the reference paper, applicable in method to the first four materials, is being attached to emails 1-4 to avoid (I hope) confusion. Please let me know if I need to further explain. Thanks, Bree Contact Information: Bree Sharratt coral login: bree office: 550-555C office phone: 650 725 2634 mobile phone: 650 283 4835 home phone: 408 252 5545 email: sharratt at stanford.edu PI: Prof. Reinhold H. Dauskardt (Materials Science & Engineering) Chemical: MSDS attached at the bottom of this email. Chemical name: Gamma-Glycidoxypropyltrimethoxysilane Product name: Silquest A-187 Silane SYNONYM: 3-(2,3-Epoxypropoxy)propyltrimethoxysilane SYNONYM: 3-GLYCIDOXYPROPYLTRIMETHOXYSILANE SYNONYM: Silicone A-187 SYNONYM: Union Carbide A-187 Components: Gamma-Glycidoxypropyltrimethoxysilane CAS# 2530-83-8 >100.0% Methanol CAS# 67-56-1 <0.2% Stanford Chemical Storage Group: L: Non-reactive Flammable and Combustible, including solvents Main Hazard Class: flammable Additional Hazards: Moderately toxic, Suspect carcinogen/mutagen, Skin irritant, Lung irritant, Eye irritant Secondary Chemicals Used with this Chemical: Methanol Propylamine (see email 4 of 6) Supplier Information: GE Silicones 3500 South State Route 2 Friendly, WV 26146 contact numbers: CHEMTREC (24 hours) 800 424 9300 GE Silicones Emergency Response (24 hours) 800 809 9998 For product safety inquiries 304 652 8446 For MSDS only 304 652 8155 Customer Service 800 523 5862 Reason for Request: My experimental work involves exploring the effects of environmental factors (temperature, relative humidity) and loading conditions (load type, mean stress, frequency) on debonding of SiNx/Epoxy/SiNx sandwich specimens. After observing some interesting behavior, I am investigating the effect that interface chemistry has on debonding. To accomplish this I will be spin-coating wafer pieces, which will be sectioned from 8 inch Si/SiO2/SiNx wafers (provided by LSI Logic, Inc) and etched in 50:1 HF, with 5 different adhesion promoting films. These adhesion promoters were specially selected to mimic certain functional groups and curing processes observed in other material systems. The following is a list of adhesion promoters that will be used in this study (note that the first three are similar to AP3000 and AP8000 already certified for use at SNF): Gamma-Methacryloxypropyltrimethoxysilane Gamma-Glycidoxypropyltrimethoxysilane Gamma-Aminopropyltrimethoxysilane n-Propyl Titanate n-Propyl Zirconate The first three adhesion promoters are silanes. Silane solutions will be stored and prepared in another Stanford lab (Peterson Bldg 550, Rm 551I) as follows: 1 part adhesion promoter will be dissolved in 100 parts deionized water, which will be diluted with 900 parts methanol to produce a 0.1 wt% solution. A few drops of propylamine will be added as a catalyst for the hydrolysis reaction (except for gamma-aminopropyltrimethoxysilane, which self-catalyzes). This method was used by Maura Jenkins (Stanford PhD 2002) and Jeff Snodgrass (Stanford PhD 2001) in preparing wafers with similar adhesion promoter films (AP3000 and AP8000) and is documented in "Important factors for silane adhesion promoter efficacy: surface coverage, functionality and chain length," also attached. The zirconate and titanate adhesion promoter solutions will be prepared to produce a 0.1 wt% solution using n-propanol. A few drops of water may be added to encourage hydrolysis, which will be determined iteratively based on the results of the spin-coated film. Process Flow: For wafer pieces (Si/thermal SiO2/PECVD SiNx): 1. wbsolvent - mix 1 part gamma-glycidoxypropyltrimethoxysilane:100 part deionized water:900 parts methanol:few drops of propylamine - bottle, cap and bag 2. wbgeneral - clean wafer pieces in 50:1 HF, water rinse and blow dry with N2, box 3. transport adhesion promoter solution, in cart, to laurel 4. laurel - spin-coat onto wafer pieces For glass slides (UV ozone cleaned and boxed in 550-553B): 1. sts - deposit 200 nm SiNx 2. wbsolvent - mix 1 part gamma-glycidoxypropyltrimethoxysilane:100 part deionized water:900 parts methanol:few drops of propylamine - bottle, cap and bag 3. transport adhesion promoter solution, in cart, to laure 4. laurel - spin-coat onto wafer pieces Amount and Form: gamma-glycidoxypropyltrimethoxysilane - 150 mL bottle, liquid form to be mixed with water, methanol and propylamine Storage: Storage group L: Non-reactive Flammable and Combustible, including solvents Incompatible with (these may cause hazardous exothermic polymerization and/or decomposition): strong oxidizing agents, water (will react to form methanol) Disposal: Liquid and solid (gloves, wipes, etc) waste will be collected locally, properly labeled and disposed of according procedures that will be determined with the safety committee. Attachments: 1. MSDS for gamma-glycidoxypropyltrimethoxysilane 2. ML Jenkins, RH Dauskardt, JC Bravman, "Important factors for silane adhesion promoter efficacy: surface coverage, functionality and chain length." J Adhsion Sci Technol, 18(13), 1497-1516 (2004). -------------- next part -------------- A non-text attachment was scrubbed... Name: not available Type: text/enriched Size: 5986 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Silquest A-187 silane.pdf Type: application/pdf Size: 164100 bytes Desc: not available URL: -------------- next part -------------- -------------- next part -------------- A non-text attachment was scrubbed... Name: not available Type: text/enriched Size: 47 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: ImportantFactorsSilaneAdhesionPromoterEfficacy-Jenkins(2004).pdf Type: application/pdf Size: 312562 bytes Desc: not available URL: From sharratt at stanford.edu Wed May 18 12:40:52 2005 From: sharratt at stanford.edu (Bree Sharratt) Date: Wed, 18 May 2005 12:40:52 -0700 Subject: New SNF Chemical (3 of 6): Gamma-Aminopropyltrimethoxysilane Message-ID: This is the 3rd of 6 new materials requests. The first 3 and last 2 materials are all various types of adhesion promoters and the 4th is a catalyst. Here is a list, in email order, of the new materials: 1. Gamma-Methacryloxypropyltrimethoxysilane 2. Gamma-Glycidoxypropyltrimethoxysilane 3. Gamma-Aminopropyltrimethoxysilane (this email) 4. Propylamine 5. n-Propyl Titanate 6. n-Propyl Zirconate Since these are all being used for the same research project, the description of the project and method will not change in subsequent emails. Also note that the reference paper, applicable in method to the first four materials, is being attached to emails 1-4 to avoid (I hope) confusion. Please let me know if I need to further explain. Thanks, Bree Contact Information: Bree Sharratt coral login: bree office: 550-555C office phone: 650 725 2634 mobile phone: 650 283 4835 home phone: 408 252 5545 email: sharratt at stanford.edu PI: Prof. Reinhold H. Dauskardt (Materials Science & Engineering) Chemical: MSDS attached at the bottom of this email. Chemical name: Gamma-Aminopropyltrimethoxysilane Product name: Silquest A-1110 Silane SYNONYMS: unknown Components: Gamma-Aminopropyltrimethoxysilane CAS# 13822-56-5 >97.0% Related silanes CAS# mixture <3.0% Methanol CAS# 67-56-1 <0.5% Stanford Chemical Storage Group: B: Compatible Pyrophoric and Water Reactive Materials Main Hazard Class: flammable Additional Hazards: combustible, water reactive, corrosive, mucous membrane damage Secondary Chemicals Used with this Chemical: Methanol Propylamine (see email 4 of 6) Supplier Information: GE Silicones 3500 South State Route 2 Friendly, WV 26146 contact numbers: CHEMTREC (24 hours) 800 424 9300 GE Silicones Emergency Response (24 hours) 800 809 9998 For product safety inquiries 304 652 8446 For MSDS only 304 652 8155 Customer Service 800 523 5862 Reason for Request: Please note that this description is repeated in subsequent requests! My experimental work involves exploring the effects of environmental factors (temperature, relative humidity) and loading conditions (load type, mean stress, frequency) on debonding of SiNx/Epoxy/SiNx sandwich specimens. After observing some interesting behavior, I am investigating the effect that interface chemistry has on debonding. To accomplish this I will be spin-coating wafer pieces, which will be sectioned from 8 inch Si/SiO2/SiNx wafers (provided by LSI Logic, Inc) and etched in 50:1 HF, with 5 different adhesion promoting films. These adhesion promoters were specially selected to mimic certain functional groups and curing processes observed in other material systems. The following is a list of adhesion promoters that will be used in this study (note that the first three are similar to AP3000 and AP8000 already certified for use at SNF): Gamma-Methacryloxypropyltrimethoxysilane Gamma-Glycidoxypropyltrimethoxysilane Gamma-Aminopropyltrimethoxysilane n-Propyl Titanate n-Propyl Zirconate The first three adhesion promoters are silanes. Silane solutions will be stored and prepared in another Stanford lab (Peterson Bldg 550, Rm 551I) as follows: 1 part adhesion promoter will be dissolved in 100 parts deionized water, which will be diluted with 900 parts methanol to produce a 0.1 wt% solution. A few drops of propylamine will be added as a catalyst for the hydrolysis reaction (except for gamma-aminopropyltrimethoxysilane, which self-catalyzes). This method was used by Maura Jenkins (Stanford PhD 2002) and Jeff Snodgrass (Stanford PhD 2001) in preparing wafers with similar adhesion promoter films (AP3000 and AP8000) and is documented in "Important factors for silane adhesion promoter efficacy: surface coverage, functionality and chain length," also attached. The zirconate and titanate adhesion promoter solutions will be prepared to produce a 0.1 wt% solution using n-propanol. A few drops of water may be added to encourage hydrolysis, which will be determined iteratively based on the results of the spin-coated film. Process Flow: For wafer pieces (Si/thermal SiO2/PECVD SiNx): 1. wbsolvent - mix 1 part gamma-aminopropyltrimethoxysilane:100 part deionized water:900 parts methanol - bottle, cap and bag 2. wbgeneral - clean wafer pieces in 50:1 HF, water rinse and blow dry with N2, box 3. transport adhesion promoter solution, in cart, to laurel 4. laurel - spin-coat onto wafer pieces For glass slides (UV ozone cleaned and boxed in 550-553B): 1. sts - deposit 200 nm SiNx 2. wbsolvent - mix 1 part gamma-aminopropyltrimethoxysilane:100 part deionized water:900 parts methanol - bottle, cap and bag 3. transport adhesion promoter solution, in cart, to laure 4. laurel - spin-coat onto wafer pieces Amount and Form: gamma-aminopropyltrimethoxysilane - 150 mL bottle, liquid form to be mixed with water, methanol Storage: Storage group B: Compatible Pyrophoric and Water Reactive Materials Incompatible with: water ("Reaction with water or other aqueous media is rapid and exothermic. The addition of small amounts of water (in the range of 2-15% can produce an exothermic reaction which generates alcohol, to the extent that the resulting solution can reach a temperature which exceeds the flash point of the new solution. If a water solution is desired, add the product to water, and not vice versa." from the MSDS) Disposal: Liquid and solid (gloves, wipes, etc) waste will be collected locally, properly labeled and disposed of according procedures that will be determined with the safety committee. Attachments: 1. MSDS for gamma-aminopropyltrimethoxysilane 2. ML Jenkins, RH Dauskardt, JC Bravman, "Important factors for silane adhesion promoter efficacy: surface coverage, functionality and chain length." J Adhsion Sci Technol, 18(13), 1497-1516 (2004). -------------- next part -------------- A non-text attachment was scrubbed... Name: not available Type: text/enriched Size: 6108 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Silquest A-1110 silane.pdf Type: application/pdf Size: 161120 bytes Desc: not available URL: -------------- next part -------------- -------------- next part -------------- A non-text attachment was scrubbed... Name: not available Type: text/enriched Size: 47 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: ImportantFactorsSilaneAdhesionPromoterEfficacy-Jenkins(2004).pdf Type: application/pdf Size: 312562 bytes Desc: not available URL: From sharratt at stanford.edu Wed May 18 12:41:30 2005 From: sharratt at stanford.edu (Bree Sharratt) Date: Wed, 18 May 2005 12:41:30 -0700 Subject: New SNF Chemical (4 of 5): Propylamine Message-ID: This is the 4th of 6 new materials requests. The first 3 and last 2 materials are all various types of adhesion promoters and the 4th is a catalyst. Here is a list, in email order, of the new materials: 1. Gamma-Methacryloxypropyltrimethoxysilane 2. Gamma-Glycidoxypropyltrimethoxysilane 3. Gamma-Aminopropyltrimethoxysilane 4. Propylamine (this email) 5. n-Propyl Titanate 6. n-Propyl Zirconate Since these are all being used for the same research project, the description of the project and method will not change in subsequent emails. Also note that the reference paper, applicable in method to the first four materials, is being attached to emails 1-4 to avoid (I hope) confusion. Please let me know if I need to further explain. Thanks, Bree Contact Information: Bree Sharratt coral login: bree office: 550-555C office phone: 650 725 2634 mobile phone: 650 283 4835 home phone: 408 252 5545 email: sharratt at stanford.edu PI: Prof. Reinhold H. Dauskardt (Materials Science & Engineering) Chemical: MSDS attached at the bottom of this email. Chemical name: propylamine Product name: n-propylamine SYNONYM: 1-Aminopropane SYNONYM: 1-Propanamine SYNONYM: 1-Propylamine SYNONYM: Mono-n-propylamine SYNONYM: Monopropylamine SYNONYM: N-Propylamine SYNONYM: Propanamine Components: n-propylamine CAS# 107-10-8 100.0% Stanford Chemical Storage Group: A: Compatible Organic Bases, Flammables, and Poisons Main Hazard Class: flammable Additional Hazards: corrosive, moderately toxic, flammable, base, mucous membrane damage, skin-absorbable poison Secondary Chemicals Used with this Chemical: Methanol gamma-methacryloxypropyltrimethoxysilane gamma-glycidoxypropyltrimethoxysilane Supplier Information: Alfa Aesar, A Johnson Matthey Company Johnson Matthey Catalog Company, Inc. 30 Bond Street Ward Hill, MA 01835-8099 contact: emergency phone: 978 521 6300 CHEMTREC (24 hours) 800 424 9300 www.alfa.com Reason for Request: Please note that this description is repeated in subsequent requests! My experimental work involves exploring the effects of environmental factors (temperature, relative humidity) and loading conditions (load type, mean stress, frequency) on debonding of SiNx/Epoxy/SiNx sandwich specimens. After observing some interesting behavior, I am investigating the effect that interface chemistry has on debonding. To accomplish this I will be spin-coating wafer pieces, which will be sectioned from 8 inch Si/SiO2/SiNx wafers (provided by LSI Logic, Inc) and etched in 50:1 HF, with 5 different adhesion promoting films. These adhesion promoters were specially selected to mimic certain functional groups and curing processes observed in other material systems. The following is a list of adhesion promoters that will be used in this study (note that the first three are similar to AP3000 and AP8000 already certified for use at SNF): Gamma-Methacryloxypropyltrimethoxysilane Gamma-Glycidoxypropyltrimethoxysilane Gamma-Aminopropyltrimethoxysilane (similar to AP3000 already certified for use at SNF) n-Propyl Titanate n-Propyl Zirconate The first three adhesion promoters are silanes. Silane solutions will be stored and prepared in another Stanford lab (Peterson Bldg 550, Rm 551I) as follows: 1 part adhesion promoter will be dissolved in 100 parts deionized water, which will be diluted with 900 parts methanol to produce a 0.1 wt% solution. A few drops of propylamine will be added as a catalyst for the hydrolysis reaction (except for gamma-aminopropyltrimethoxysilane, which self-catalyzes). This method was used by Maura Jenkins (Stanford PhD 2002) and Jeff Snodgrass (Stanford PhD 2001) in preparing wafers with similar adhesion promoter films (AP3000 and AP8000) and is documented in "Important factors for silane adhesion promoter efficacy: surface coverage, functionality and chain length," also attached. The zirconate and titanate adhesion promoter solutions will be prepared to produce a 0.1 wt% solution using n-propanol. A few drops of water may be added to encourage hydrolysis, which will be determined iteratively based on the results of the spin-coated film. Process Flow: For wafer pieces (Si/thermal SiO2/PECVD SiNx): 1. wbsolvent - mix 1 part adhesion promoter*:100 part deionized water:900 parts methanol:few drops of propylamine - bottle, cap and bag 2. wbgeneral - clean wafer pieces in 50:1 HF, water rinse and blow dry with N2, box 3. transport adhesion promoter solution, in cart, to laurel 4. laurel - spin-coat onto wafer pieces For glass slides (UV ozone cleaned and boxed in 550-553B): 1. sts - deposit 200 nm SiNx 2. wbsolvent - mix 1 part adhesion promoter*:100 part deionized water:900 parts methanol:few drops of propylamine - bottle, cap and bag 3. transport adhesion promoter solution, in cart, to laure 4. laurel - spin-coat onto wafer pieces *the adhesion promoters used with propylamine are gamma-methacryloxypropyltrimethoxysilane and gamma-glycidoxypropyltrimethoxysilane Amount and Form: propylamine - 250 mL bottle, liquid form to be added to adhesion promoter solutions Storage: Storage group A: Compatible Organic Bases, Flammables, and Poisons Incompatible with: oxidizing agents, acids Disposal: Liquid and solid (gloves, wipes, etc) waste will be collected locally, properly labeled and disposed of according procedures that will be determined with the safety committee. Attachments: 1. MSDS for propylamine 2. ML Jenkins, RH Dauskardt, JC Bravman, "Important factors for silane adhesion promoter efficacy: surface coverage, functionality and chain length." J Adhsion Sci Technol, 18(13), 1497-1516 (2004). -------------- next part -------------- A non-text attachment was scrubbed... Name: not available Type: text/enriched Size: 5934 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Propylamine MSDS.pdf Type: application/pdf Size: 16490 bytes Desc: not available URL: -------------- next part -------------- -------------- next part -------------- A non-text attachment was scrubbed... Name: not available Type: text/enriched Size: 47 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: ImportantFactorsSilaneAdhesionPromoterEfficacy-Jenkins(2004).pdf Type: application/pdf Size: 312562 bytes Desc: not available URL: From sharratt at stanford.edu Wed May 18 12:41:43 2005 From: sharratt at stanford.edu (Bree Sharratt) Date: Wed, 18 May 2005 12:41:43 -0700 Subject: New SNF Chemical (5 of 6): n-propyl titanate Message-ID: This is the 5th of 6 new materials requests. The first 3 and last 2 materials are all various types of adhesion promoters and the 4th is a catalyst. Here is a list, in email order, of the new materials: 1. Gamma-Methacryloxypropyltrimethoxysilane 2. Gamma-Glycidoxypropyltrimethoxysilane 3. Gamma-Aminopropyltrimethoxysilane 4. Propylamine 5. n-Propyl Titanate (this email) 6. n-Propyl Zirconate Since these are all being used for the same research project, the description of the project and method will not change in subsequent emails. The n-propyl titanate and n-propyl zirconate are Tyzor products and the general brochure has been included for materials 5 and 6. Please let me know if I need to further explain. Thanks, Bree Contact Information: Bree Sharratt coral login: bree office: 550-555C office phone: 650 725 2634 mobile phone: 650 283 4835 home phone: 408 252 5545 email: sharratt at stanford.edu PI: Prof. Reinhold H. Dauskardt (Materials Science & Engineering) Chemical: MSDS attached at the bottom of this email. Chemical name: n-propyl titanate Product name: "Tyzor" NPT SYNONYM: Titanium(IV) propoxide SYNONYM: 1-Propanol, titanium(4+) salt SYNONYM: Tetrapropyl orhotitanate SYNONYM: Tetrapropyl titanate SYNONYM: NPT (n-Propyl titanate) Components: titanium tetrapropanolate CAS# 3087-37-4 >99% n-propyl alcohol CAS# 71-23-8 <1% Stanford Chemical Storage Group: L: Non-Reactive Flammables and Combustibles, including solvents Main Hazard Class: flammable Additional Hazards: combustible, skin irritant, lung irritant, eye irritant Secondary Chemicals Used with this Chemical: n-propanol Supplier Information: DuPont 1007 Market Street Wilmington, DE 19898 contact: product info: 800 441 7515 CHEMTREC: 800 424 9300 medical emergency: 800 441 3637 www.dupont.com/tyzor/ Reason for Request: Please note that this description is repeated in subsequent requests! My experimental work involves exploring the effects of environmental factors (temperature, relative humidity) and loading conditions (load type, mean stress, frequency) on debonding of SiNx/Epoxy/SiNx sandwich specimens. After observing some interesting behavior, I am investigating the effect that interface chemistry has on debonding. To accomplish this I will be spin-coating wafer pieces, which will be sectioned from 8 inch Si/SiO2/SiNx wafers (provided by LSI Logic, Inc) and etched in 50:1 HF, with 5 different adhesion promoting films. These adhesion promoters were specially selected to mimic certain functional groups and curing processes observed in other material systems. The following is a list of adhesion promoters that will be used in this study (note that the first three are similar to AP3000 and AP8000 already certified for use at SNF): Gamma-Methacryloxypropyltrimethoxysilane Gamma-Glycidoxypropyltrimethoxysilane Gamma-Aminopropyltrimethoxysilane n-Propyl Titanate n-Propyl Zirconate The first three adhesion promoters are silanes. Silane solutions will be stored and prepared in another Stanford lab (Peterson Bldg 550, Rm 551I) as follows: 1 part adhesion promoter will be dissolved in 100 parts deionized water, which will be diluted with 900 parts methanol to produce a 0.1 wt% solution. A few drops of propylamine will be added as a catalyst for the hydrolysis reaction (except for gamma-aminopropyltrimethoxysilane, which self-catalyzes). This method was used by Maura Jenkins (Stanford PhD 2002) and Jeff Snodgrass (Stanford PhD 2001) in preparing wafers with similar adhesion promoter films (AP3000 and AP8000) and is documented in "Important factors for silane adhesion promoter efficacy: surface coverage, functionality and chain length," also attached. The zirconate and titanate adhesion promoter solutions will be prepared to produce a 0.1 wt% solution using n-propanol. A few drops of water may be added to encourage hydrolysis, which will be determined iteratively based on the results of the spin-coated film. Process Flow: For wafer pieces (Si/thermal SiO2/PECVD SiNx): 1. wbsolvent - mix 1 part n-propyl titanate:1000 parts n-propanol - bottle, cap and bag 2. wbgeneral - clean wafer pieces in 50:1 HF, water rinse and blow dry with N2, box 3. transport adhesion promoter solution, in cart, to laurel 4. laurel - spin-coat onto wafer pieces For glass slides (UV ozone cleaned and boxed in 550-553B): 1. sts - deposit 200 nm SiNx 2. wbsolvent - mix 1 part n-propyl titanate:1000 parts n-propanol - bottle, cap and bag 3. transport adhesion promoter solution, in cart, to laure 4. laurel - spin-coat onto wafer pieces Amount and Form: n-propyl titanate - 250 mL bottle, liquid form to be added to adhesion promoter solutions Storage: Storage group L: Non-Reactive Flammables and Combustibles, including solvents Incompatible with: water and aqueous solutions (will hydrolyze rapidly) Disposal: Liquid and solid (gloves, wipes, etc) waste will be collected locally, properly labeled and disposed of according procedures that will be determined with the safety committee. Attachments: 1. MSDS for n-propyl titanate (NPT) 2. Tyzor NPT product information sheet 3. Tyzor general brochure -------------- next part -------------- A non-text attachment was scrubbed... Name: not available Type: text/enriched Size: 5445 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: MSDS-NPT.pdf Type: application/pdf Size: 15439 bytes Desc: not available URL: -------------- next part -------------- -------------- next part -------------- A non-text attachment was scrubbed... Name: not available Type: text/enriched Size: 47 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Tyzor_NPT.pdf Type: application/pdf Size: 121522 bytes Desc: not available URL: -------------- next part -------------- -------------- next part -------------- A non-text attachment was scrubbed... Name: not available Type: text/enriched Size: 47 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Tyzor_General_Brochure.pdf Type: application/pdf Size: 269947 bytes Desc: not available URL: -------------- next part -------------- -------------- next part -------------- A non-text attachment was scrubbed... Name: not available Type: text/enriched Size: 48 bytes Desc: not available URL: From sharratt at stanford.edu Wed May 18 12:42:01 2005 From: sharratt at stanford.edu (Bree Sharratt) Date: Wed, 18 May 2005 12:42:01 -0700 Subject: New SNF Chemical (6 of 6): n-propyl zirconate Message-ID: This is the 6th of 6 (yay!) new materials requests. The first 3 and last 2 materials are all various types of adhesion promoters and the 4th is a catalyst. Here is a list, in email order, of the new materials: 1. Gamma-Methacryloxypropyltrimethoxysilane 2. Gamma-Glycidoxypropyltrimethoxysilane 3. Gamma-Aminopropyltrimethoxysilane 4. Propylamine 5. n-Propyl Titanate 6. n-Propyl Zirconate (this email) Since these are all being used for the same research project, the description of the project and method will not change in subsequent emails. The n-propyl titanate and n-propyl zirconate are Tyzor products and the general brochure has been included for materials 5 and 6. Please let me know if I need to further explain. Thanks, Bree Contact Information: Bree Sharratt coral login: bree office: 550-555C office phone: 650 725 2634 mobile phone: 650 283 4835 home phone: 408 252 5545 email: sharratt at stanford.edu PI: Prof. Reinhold H. Dauskardt (Materials Science & Engineering) Chemical: MSDS attached at the bottom of this email. Chemical name: n-propyl zirconate Product name: "Tyzor" NPZ SYNONYM: Zirconium(IV) propoxide, 70% in 1-propanol SYNONYM: "Tyzor" NPZ SYNONYM: Zirconium(IV) propoxide in flammable solvent SYNONYM: Zirconium(IV) propoxide solution SYNONYM: Zircon-n-propylate SYNONYM: Zirconium-Propylate SYNONYM: Tetrapropoxy zirconium SYNONYM: Zirconium tetrapropoxide Components: zirconium tetrapropanolate CAS# 23519-77-9 70% n-propyl alcohol CAS# 71-23-8 30% Stanford Chemical Storage Group: L: Non-Reactive Flammables and Combustibles, including solvents Main Hazard Class: flammable Additional Hazards: flammable, skin irritant, lung irritant, eye irritant Secondary Chemicals Used with this Chemical: n-propanol Supplier Information: DuPont 1007 Market Street Wilmington, DE 19898 contact: product info: 800 441 7515 CHEMTREC: 800 424 9300 medical emergency: 800 441 3637 www.dupont.com/tyzor/ Reason for Request: Please note that this description is repeated in subsequent requests! My experimental work involves exploring the effects of environmental factors (temperature, relative humidity) and loading conditions (load type, mean stress, frequency) on debonding of SiNx/Epoxy/SiNx sandwich specimens. After observing some interesting behavior, I am investigating the effect that interface chemistry has on debonding. To accomplish this I will be spin-coating wafer pieces, which will be sectioned from 8 inch Si/SiO2/SiNx wafers (provided by LSI Logic, Inc) and etched in 50:1 HF, with 5 different adhesion promoting films. These adhesion promoters were specially selected to mimic certain functional groups and curing processes observed in other material systems. The following is a list of adhesion promoters that will be used in this study (note that the first three are similar to AP3000 and AP8000 already certified for use at SNF): Gamma-Methacryloxypropyltrimethoxysilane Gamma-Glycidoxypropyltrimethoxysilane Gamma-Aminopropyltrimethoxysilane n-Propyl Titanate n-Propyl Zirconate The first three adhesion promoters are silanes. Silane solutions will be stored and prepared in another Stanford lab (Peterson Bldg 550, Rm 551I) as follows: 1 part adhesion promoter will be dissolved in 100 parts deionized water, which will be diluted with 900 parts methanol to produce a 0.1 wt% solution. A few drops of propylamine will be added as a catalyst for the hydrolysis reaction (except for gamma-aminopropyltrimethoxysilane, which self-catalyzes). This method was used by Maura Jenkins (Stanford PhD 2002) and Jeff Snodgrass (Stanford PhD 2001) in preparing wafers with similar adhesion promoter films (AP3000 and AP8000) and is documented in "Important factors for silane adhesion promoter efficacy: surface coverage, functionality and chain length," also attached. The zirconate and titanate adhesion promoter solutions will be prepared to produce a 0.1 wt% solution using n-propanol. A few drops of water may be added to encourage hydrolysis, which will be determined iteratively based on the results of the spin-coated film. Process Flow: For wafer pieces (Si/thermal SiO2/PECVD SiNx): 1. wbsolvent - mix 1 part n-propyl zirconate:700 parts n-propanol - bottle, cap and bag 2. wbgeneral - clean wafer pieces in 50:1 HF, water rinse and blow dry with N2, box 3. transport adhesion promoter solution, in cart, to laurel 4. laurel - spin-coat onto wafer pieces For glass slides (UV ozone cleaned and boxed in 550-553B): 1. sts - deposit 200 nm SiNx 2. wbsolvent - mix 1 part n-propyl titanate:700 parts n-propanol - bottle, cap and bag 3. transport adhesion promoter solution, in cart, to laure 4. laurel - spin-coat onto wafer pieces Amount and Form: n-propyl zirconate - 250 mL bottle, liquid form to be added to adhesion promoter solutions Storage: Storage group L: Non-Reactive Flammables and Combustibles, including solvents Incompatible with: water and aqueous solutions (will hydrolyze rapidly) Disposal: Liquid and solid (gloves, wipes, etc) waste will be collected locally, properly labeled and disposed of according procedures that will be determined with the safety committee. Attachments: 1. MSDS for n-propyl zirconate (NPZ) 2. Tyzor NPZ product information sheet 3. Tyzor general brochure -------------- next part -------------- A non-text attachment was scrubbed... Name: not available Type: text/enriched Size: 5577 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: MSDS-NPZ.pdf Type: application/pdf Size: 18568 bytes Desc: not available URL: -------------- next part -------------- -------------- next part -------------- A non-text attachment was scrubbed... Name: not available Type: text/enriched Size: 47 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Tyzor_NPZ.pdf Type: application/pdf Size: 122040 bytes Desc: not available URL: -------------- next part -------------- -------------- next part -------------- A non-text attachment was scrubbed... Name: not available Type: text/enriched Size: 47 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Tyzor_General_Brochure.pdf Type: application/pdf Size: 269947 bytes Desc: not available URL: From mtang at snf.stanford.edu Wed May 18 13:32:43 2005 From: mtang at snf.stanford.edu (Mary Tang) Date: Wed, 18 May 2005 13:32:43 -0700 Subject: New SNF Chemical (6 of 6): n-propyl zirconate In-Reply-To: References: Message-ID: <428BA66B.90708@snf.stanford.edu> Hi Bree -- These should not be a problem. However, there are a few concerns, which I think we can pretty readily address. 1. Many of these are solid. We don't allow powders into the clean room. However, these can be mixed up in the wet benches in the wafersaw room. There is a metal bench for solvents and a polypro one for acids/bases/water. There is also a balance (although not a high resolution one.) Once these are mixed, they can be transferred to the lab through the "gray area" behind the furnaces (where flammables are normally stored.) Ask one of us and we can show you. 2. You'll need a barcode and a yellow hazardous tag for any bottles you wish to store. If you plan to get rid of them at the end of the day, then a blue hazardous tag is all that is needed. 3. You should probably use the headway instead of the laurell. Mahnaz can correct me on this. But it is a lot easier to handle solid waste using the headway (you just line the bowl with foil and then remove and place it in a hazardous waste bag when you are done. Getting rid of waste is hopefully not a problem, since you will be spinning on relatively small amounts. This will probably all be absorbed by your solid waste. 4. Do you plan to do any heat treatment/activation following spin coat? Will there still be a lot of solvent on your wafers without heating? Fellow SpecMat'ers: any other questions or comments to add? Mary Bree Sharratt wrote: > This is the* 6th of 6* (yay!) new materials requests. The first 3 and > last 2 materials are all various types of adhesion promoters and the > 4th is a catalyst. Here is a list, in email order, of the new materials: > > 1. Gamma-Methacryloxypropyltrimethoxysilane > 2. Gamma-Glycidoxypropyltrimethoxysilane > 3. Gamma-Aminopropyltrimethoxysilane > 4. Propylamine > 5. n-Propyl Titanate > *6. n-Propyl Zirconate (this email)* > > Since these are all being used for the same research project, the > description of the project and method will not change in subsequent > emails. The n-propyl titanate and n-propyl zirconate are Tyzor > products and the general brochure has been included for materials 5 > and 6. Please let me know if I need to further explain. > > Thanks, > Bree* > > Contact Information:* > Bree Sharratt > coral login: bree > office: 550-555C > office phone: 650 725 2634 > mobile phone: 650 283 4835 > home phone: 408 252 5545 > email: sharratt at stanford.edu > PI: Prof. Reinhold H. Dauskardt (Materials Science & Engineering) > > *Chemical:* > MSDS attached at the bottom of this email. > > Chemical name: n-propyl zirconate > Product name: "Tyzor" NPZ > SYNONYM: Zirconium(IV) propoxide, 70% in 1-propanol > SYNONYM: "Tyzor" NPZ > SYNONYM: Zirconium(IV) propoxide in flammable solvent > SYNONYM: Zirconium(IV) propoxide solution > SYNONYM: Zircon-n-propylate > SYNONYM: Zirconium-Propylate > SYNONYM: Tetrapropoxy zirconium > SYNONYM: Zirconium tetrapropoxide > > > Components: > zirconium tetrapropanolate CAS# 23519-77-9 70% > n-propyl alcohol CAS# 71-23-8 30% > > Stanford Chemical Storage Group: L: Non-Reactive Flammables and > Combustibles, including solvents > Main Hazard Class: flammable > Additional Hazards: flammable, skin irritant, lung irritant, eye irritant > > *Secondary Chemicals Used with this Chemical: > *n-propanol > > *Supplier Information: > *DuPont > 1007 Market Street > Wilmington, DE 19898 > > contact: > product info: 800 441 7515 > CHEMTREC: 800 424 9300 > medical emergency: 800 441 3637 > www.dupont.com/tyzor/ > > *Reason for Request: Please note that this description is repeated in > subsequent requests!* > My experimental work involves exploring the effects of environmental > factors (temperature, relative humidity) and loading conditions (load > type, mean stress, frequency) on debonding of SiNx/Epoxy/SiNx sandwich > specimens. After observing some interesting behavior, I am > investigating the effect that interface chemistry has on debonding. To > accomplish this I will be spin-coating wafer pieces, which will be > sectioned from 8 inch Si/SiO2/SiNx wafers (provided by LSI Logic, Inc) > and etched in 50:1 HF, with 5 different adhesion promoting films. > These adhesion promoters were specially selected to mimic certain > functional groups and curing processes observed in other material > systems. The following is a list of adhesion promoters that will be > used in this study (note that the first three are similar to AP3000 > and AP8000 already certified for use at SNF): > > Gamma-Methacryloxypropyltrimethoxysilane > Gamma-Glycidoxypropyltrimethoxysilane > Gamma-Aminopropyltrimethoxysilane > n-Propyl Titanate > n-Propyl Zirconate > > The first three adhesion promoters are silanes. Silane solutions will > be stored and prepared in another Stanford lab (Peterson Bldg 550, Rm > 551I) as follows: 1 part adhesion promoter will be dissolved in 100 > parts deionized water, which will be diluted with 900 parts methanol > to produce a 0.1 wt% solution. A few drops of propylamine will be > added as a catalyst for the hydrolysis reaction (except for > gamma-aminopropyltrimethoxysilane, which self-catalyzes). This method > was used by Maura Jenkins (Stanford PhD 2002) and Jeff Snodgrass > (Stanford PhD 2001) in preparing wafers with similar adhesion promoter > films (AP3000 and AP8000) and is documented in "Important factors for > silane adhesion promoter efficacy: surface coverage, functionality and > chain length," also attached. > > The zirconate and titanate adhesion promoter solutions will be > prepared to produce a 0.1 wt% solution using n-propanol. A few drops > of water may be added to encourage hydrolysis, which will be > determined iteratively based on the results of the spin-coated film. > > *Process Flow:* > For wafer pieces (Si/thermal SiO2/PECVD SiNx): > 1. wbsolvent - mix 1 part n-propyl zirconate:700 parts n-propanol - > bottle, cap and bag > 2. wbgeneral - clean wafer pieces in 50:1 HF, water rinse and blow dry > with N2, box > 3. transport adhesion promoter solution, in cart, to laurel > 4. laurel - spin-coat onto wafer pieces > For glass slides (UV ozone cleaned and boxed in 550-553B): > 1. sts - deposit 200 nm SiNx > 2. wbsolvent - mix 1 part n-propyl titanate:700 parts n-propanol - > bottle, cap and bag > 3. transport adhesion promoter solution, in cart, to laure > 4. laurel - spin-coat onto wafer pieces > > *Amount and Form:* > n-propyl zirconate - 250 mL bottle, liquid form > to be added to adhesion promoter solutions > > *Storage:* > Storage group L: Non-Reactive Flammables and Combustibles, including > solvents > Incompatible with: water and aqueous solutions (will hydrolyze rapidly) > > *Disposal:* > Liquid and solid (gloves, wipes, etc) waste will be collected locally, > properly labeled and disposed of according procedures that will be > determined with the safety committee. > > *Attachments: > *1. MSDS for n-propyl zirconate (NPZ) > 2. Tyzor NPZ product information sheet > 3. Tyzor general brochure > > > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From sharratt at stanford.edu Wed May 18 14:33:11 2005 From: sharratt at stanford.edu (Bree Sharratt) Date: Wed, 18 May 2005 14:33:11 -0700 Subject: New SNF Chemical (6 of 6): n-propyl zirconate In-Reply-To: <428BA66B.90708@snf.stanford.edu> Message-ID: <6EF64A69-C7E4-11D9-9982-000393D62BF4@stanford.edu> Hello Mary and others, First, to clarify: all the materials are in liquid form. About the heat treatment after spin-coating: I am hoping not to have to heat treat but to just "babysit" them under the exhaust long enough to allow the solvent to disperse so that I avoid any changes in the film before I continue with my sample prep back here in our lab (550-551I). Thanks, Bree On Wednesday, May 18, 2005, at 13:32 US/Pacific, Mary Tang wrote: > Hi Bree -- > > These should not be a problem. However, there are a few concerns, > which I think we can pretty readily address. > > 1. Many of these are solid. We don't allow powders into the clean > room. However, these can be mixed up in the wet benches in the > wafersaw room. There is a metal bench for solvents and a polypro one > for acids/bases/water. There is also a balance (although not a high > resolution one.) Once these are mixed, they can be transferred to the > lab through the "gray area" behind the furnaces (where flammables are > normally stored.) Ask one of us and we can show you. > > 2. You'll need a barcode and a yellow hazardous tag for any bottles > you wish to store. If you plan to get rid of them at the end of the > day, then a blue hazardous tag is all that is needed. > > 3. You should probably use the headway instead of the laurell. > Mahnaz can correct me on this. But it is a lot easier to handle solid > waste using the headway (you just line the bowl with foil and then > remove and place it in a hazardous waste bag when you are done. > Getting rid of waste is hopefully not a problem, since you will be > spinning on relatively small amounts. This will probably all be > absorbed by your solid waste. > > 4. Do you plan to do any heat treatment/activation following spin > coat? Will there still be a lot of solvent on your wafers without > heating? > > Fellow SpecMat'ers: any other questions or comments to add? > > Mary > > Bree Sharratt wrote: > >> This is the* 6th of 6* (yay!) new materials requests. The first 3 and >> last 2 materials are all various types of adhesion promoters and the >> 4th is a catalyst. Here is a list, in email order, of the new >> materials: >> >> 1. Gamma-Methacryloxypropyltrimethoxysilane >> 2. Gamma-Glycidoxypropyltrimethoxysilane >> 3. Gamma-Aminopropyltrimethoxysilane >> 4. Propylamine >> 5. n-Propyl Titanate >> *6. n-Propyl Zirconate (this email)* >> >> Since these are all being used for the same research project, the >> description of the project and method will not change in subsequent >> emails. The n-propyl titanate and n-propyl zirconate are Tyzor >> products and the general brochure has been included for materials 5 >> and 6. Please let me know if I need to further explain. >> >> Thanks, >> Bree* >> >> Contact Information:* >> Bree Sharratt >> coral login: bree >> office: 550-555C >> office phone: 650 725 2634 >> mobile phone: 650 283 4835 >> home phone: 408 252 5545 >> email: sharratt at stanford.edu >> PI: Prof. Reinhold H. Dauskardt (Materials Science & Engineering) >> >> *Chemical:* >> MSDS attached at the bottom of this email. >> >> Chemical name: n-propyl zirconate >> Product name: "Tyzor" NPZ >> SYNONYM: Zirconium(IV) propoxide, 70% in 1-propanol >> SYNONYM: "Tyzor" NPZ >> SYNONYM: Zirconium(IV) propoxide in flammable solvent >> SYNONYM: Zirconium(IV) propoxide solution >> SYNONYM: Zircon-n-propylate >> SYNONYM: Zirconium-Propylate >> SYNONYM: Tetrapropoxy zirconium >> SYNONYM: Zirconium tetrapropoxide >> >> >> Components: >> zirconium tetrapropanolate CAS# 23519-77-9 70% >> n-propyl alcohol CAS# 71-23-8 30% >> >> Stanford Chemical Storage Group: L: Non-Reactive Flammables and >> Combustibles, including solvents >> Main Hazard Class: flammable >> Additional Hazards: flammable, skin irritant, lung irritant, eye >> irritant >> >> *Secondary Chemicals Used with this Chemical: >> *n-propanol >> >> *Supplier Information: >> *DuPont >> 1007 Market Street >> Wilmington, DE 19898 >> >> contact: >> product info: 800 441 7515 >> CHEMTREC: 800 424 9300 >> medical emergency: 800 441 3637 >> www.dupont.com/tyzor/ >> >> *Reason for Request: Please note that this description is repeated in >> subsequent requests!* >> My experimental work involves exploring the effects of environmental >> factors (temperature, relative humidity) and loading conditions (load >> type, mean stress, frequency) on debonding of SiNx/Epoxy/SiNx >> sandwich specimens. After observing some interesting behavior, I am >> investigating the effect that interface chemistry has on debonding. >> To accomplish this I will be spin-coating wafer pieces, which will be >> sectioned from 8 inch Si/SiO2/SiNx wafers (provided by LSI Logic, >> Inc) and etched in 50:1 HF, with 5 different adhesion promoting >> films. These adhesion promoters were specially selected to mimic >> certain functional groups and curing processes observed in other >> material systems. The following is a list of adhesion promoters that >> will be used in this study (note that the first three are similar to >> AP3000 and AP8000 already certified for use at SNF): >> >> Gamma-Methacryloxypropyltrimethoxysilane >> Gamma-Glycidoxypropyltrimethoxysilane >> Gamma-Aminopropyltrimethoxysilane >> n-Propyl Titanate >> n-Propyl Zirconate >> >> The first three adhesion promoters are silanes. Silane solutions will >> be stored and prepared in another Stanford lab (Peterson Bldg 550, Rm >> 551I) as follows: 1 part adhesion promoter will be dissolved in 100 >> parts deionized water, which will be diluted with 900 parts methanol >> to produce a 0.1 wt% solution. A few drops of propylamine will be >> added as a catalyst for the hydrolysis reaction (except for >> gamma-aminopropyltrimethoxysilane, which self-catalyzes). This method >> was used by Maura Jenkins (Stanford PhD 2002) and Jeff Snodgrass >> (Stanford PhD 2001) in preparing wafers with similar adhesion >> promoter films (AP3000 and AP8000) and is documented in "Important >> factors for silane adhesion promoter efficacy: surface coverage, >> functionality and chain length," also attached. >> >> The zirconate and titanate adhesion promoter solutions will be >> prepared to produce a 0.1 wt% solution using n-propanol. A few drops >> of water may be added to encourage hydrolysis, which will be >> determined iteratively based on the results of the spin-coated film. >> >> *Process Flow:* >> For wafer pieces (Si/thermal SiO2/PECVD SiNx): >> 1. wbsolvent - mix 1 part n-propyl zirconate:700 parts n-propanol - >> bottle, cap and bag >> 2. wbgeneral - clean wafer pieces in 50:1 HF, water rinse and blow >> dry with N2, box >> 3. transport adhesion promoter solution, in cart, to laurel >> 4. laurel - spin-coat onto wafer pieces >> For glass slides (UV ozone cleaned and boxed in 550-553B): >> 1. sts - deposit 200 nm SiNx >> 2. wbsolvent - mix 1 part n-propyl titanate:700 parts n-propanol - >> bottle, cap and bag >> 3. transport adhesion promoter solution, in cart, to laure >> 4. laurel - spin-coat onto wafer pieces >> >> *Amount and Form:* >> n-propyl zirconate - 250 mL bottle, liquid form >> to be added to adhesion promoter solutions >> >> *Storage:* >> Storage group L: Non-Reactive Flammables and Combustibles, including >> solvents >> Incompatible with: water and aqueous solutions (will hydrolyze >> rapidly) >> >> *Disposal:* >> Liquid and solid (gloves, wipes, etc) waste will be collected >> locally, properly labeled and disposed of according procedures that >> will be determined with the safety committee. >> >> *Attachments: >> *1. MSDS for n-propyl zirconate (NPZ) >> 2. Tyzor NPZ product information sheet >> 3. Tyzor general brochure >> >> >> > > > -- > Mary X. Tang, Ph.D. > Stanford Nanofabrication Facility > CIS Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu > > From Goodnewsnoreply at hotmail.com Thu May 19 12:53:38 2005 From: Goodnewsnoreply at hotmail.com (Good News) Date: Thu, 19 May 2005 15:53:38 -0400 Subject: Good News Message-ID: I know God exists from divine intervention. Jesus is Lord. 1)Sept 2003: I was down Pittsburgh, and I heard a voice that said,"Good News". It confused me, but I felt compeled to come home to my old church. 2)When I arrive home and held my dads hands inside the Church(he is grounds keeper, and just so happened to be there), and profess to him and God my love, he went up and brought me down a Bible, The Good News Bible. 3)I have never heard of this Bible before in my life, the "Good News" I was spoken to is manifested in physical form. I don't claim to be a prophet,but I fully know God exists as explained in the bible. If you read the bible, you'll find truth. If you still have time to read, I broke the book of Proverbs down into an outline format. Its good to get a lot of information fast, but I still suggest you read the bible in full. God is pleased when you live: * Intelligently * Honest * Just-morally right. * Fair * Righteous * Loyally * Faithfully * Be mature * Truthful * Loving * Good and resist sin-Innocent * Modest * Kind * Generous * Helping of others * Humble Proverbs give reasons why you want to be these things, but its simpler just to be them and not worry about why. Hard work is praised, but its the Lord's blessing that allows you wealth. Sensible people accept good advice. Good man's words are a fountain of life. Don't speak scornfully of others. The more you talk, the more likely you'll sin, so try to keep quiet. Remain calm, and think things through before speaking or acting. A gentle answer quiets anger, but a harsh one stirs it up. Good people think before they answer. Evil people have a quick reply, but it causes trouble. A wise, mature person is known for his understanding. The more pleasant his words, the more persuasive he is. The start of an argument is like the first break in a dam; stop it before it goes any further. Give a silly answer to a silly question, and the one who asked it will realize that he's not as smart as he thinks. Get all the advice you can, and you will succeed; without it you will fail.15:22 Educated and wise person can understand the hidden meanings of proverbs. *To have knowledge, you must first have reverence for the Lord. *stay away from people that steal/kill for loot 1:15-1:19,2:12 *Keep company wise the wise and you will become wise. If you make friends with stupid people, you will be ruined. 13:20 *Wisdom promises security 1-33 *Wisdom promises a long life 3-2 *Wisdom promises wealth and honor 3:16 *Wisdom can help you lead a pleasant and safe life *Seek wisdom and learn about God. *Don't become arrogant and think you're wiser than you are. 3:34-God has no use for conceited people, but shows favor to those who are humble. *The Lord provides help and protection for righteous, honest men. *The Lord protects those who treat others fairly. *The Lord guards those who are devoted to him *The Lord is pleased with a man who finds wisdom. *Trust in the Lord with all your heart over what you think you know *Remember the Lord always. *Resist immoral women, especially ones who want to cheat on their husband(repeated theme) *Whenever you can: do good to people *Don't argue with someone who has done you no harm *Get insight after wisdom4-7 Inssight: The capacity to discern the true nature of a situation; penetration. *The Lord hates a proud look 6:16 *The Lord also hates a man who stirs up trouble among friends *Learn to smile and display happiness to others when happy. -It helps spread the Gospel: *Smiling faces make you happy, and good news makes you feel better.15:30 *Your reward depends on what you say and what you do; you will get what you deserve. *Smart people ignore insults. *Be careful what you say and protect your life. A careless talker destroys himself. Interesting Proverbs: 15:3 The Lord sees what happens everywhere; he is watching us, whether we do good or evil. 15:29 When good people pray, the Lord listens, but he ignores those who are evil. 16:3 Ask the Lord to bless your plans, and you will be successful in carrying them out. 17:3 Gold and silver are tested by fire, and a person's heart is tested by the Lord. 16:9 You may make your plans, but God directs your actions. 16:4 Everything the Lord has made has its destiny; and the destiny of the wicked is destruction. 20:24 The LORD has determined our path; how then can anyone understand the direction his own life is taking? 11:11 A city becomes great when righteous men give it their blessing; but a city is brought to ruin by the words of the wicked. 11:14 A nation will fall if it has no guidance. Many advisers mean security. 14:28 A king's greatness depends on how many people he rules; without them he is nothing. 14:34 Righteousness makes a nation great; sin is a disgrace to any nation. 21-1 The LORD controls the mind of a king as easily as he directs the course of a stream. 4:23 Be careful how you think; your life is shaped by your thoughts. 12:9 It is better to be an ordinary man working for a living than to play the part of a great man but go hungry. 12:25 Worry can rob you of happiness, but kind words will cheer you up. 13:17 Unreliable messengers cause trouble, but those who can be trusted bring peace. 13:23 Unused fields could yield plenty of food for the poor, but unjust men keep them from being farmed. 14:4 Without any oxen to pull the plow your barn will be empty, but with them it will be full of grain. -Have tools for the job 16:25,14:12 What you think is the right road may lead to death. 14:21 If you want to be happy, be kind to the poor; it is a sin to despise anyone. 14:30 Peace of mind makes the body healthy, but jealousy is like a cancer. -Help people see they don't need to be jealous. 16:26 A laborer's appetite makes him work harder, because he wants to satisfy his hunger- biblical explaination for capitalism 16:30 Watch out for people who grin and wink at you; they have thought of something evil. 16:32 It is better to be patient than powerful. It is better to win control over yourself than whole cities. 16:33 Men cast lots to learn God's will, but God himself determines the answer. 17:2 A shrewd servant will gain authority over a master's worthless son and recieve a part of the inheritance. 17:4 Evil people listen to evil ideas, and liars listen to lies. 17:5 If you make fun of poor people, you insult the God who made them. You will be punished if you take pleasure in somoene's misfortune. 17:12 It is better to meet a mother bear robbed of her cubs than to meet some fool busy with a stupid projet. 17:23 Corrupt judges accept secret bribes, and then justice is not done. 18:16 Do you want to meet an important person? Take him a gift and it will be easy. 18:18 If two powerful men are opposing each other in court, casting lots can settle the issue. 18:20 You will have to live with the consequences of everything you say. 18:22 Find a wife abd tiy fubd a fiid rgubf; it shows that the Lord is good to you. 20:5 A person's thoughts are like water in a deep well, but someone with insight can draw thm out. 21-22 A shrewd general can take a city defended by strong men, and destroy the walls they relied on. 27:8 A man away from home is like a bird away from its nest. From mtang at snf.stanford.edu Thu May 19 16:09:22 2005 From: mtang at snf.stanford.edu (Mary Tang) Date: Thu, 19 May 2005 16:09:22 -0700 Subject: honeywell phos spin on dopant In-Reply-To: <051220052233.5170.4283D9CA000C28CC00001432220588911601030E06979B9D0E@comcast.net> References: <051220052233.5170.4283D9CA000C28CC00001432220588911601030E06979B9D0E@comcast.net> Message-ID: <428D1CA2.1060906@snf.stanford.edu> Hi Aleta -- Your process is officially approved. Please obtain a yellow sticker from Mahnaz. Please also confirm with Peter Griffin (griffin at snf.stanford.edu) about which RTA to use. Let us know if you have any other questions. Mary artyjamo at comcast.net wrote: > Hi Mary and Spec Mat. > > I would like to bring in a small 100 ml eyedropper bottle of this > material and store it at SNF. From the MSDS sheet, it is a flammable > liquid that would react with strong oxidants, halogens & > alkalies. From the Stanford Material storage outline it looks like > it should be stored in the left solvent cabinet Shelf 1 Storage group > L, but basically I'll store it where you tell me to store it. My > plan is to spin the material on Si wafers and hot plate bake it for 1 > min at 150 degrees on the hotplates immediatly to the right of the > Headway spinner. The 700-1100 degree for 30 seconds/ N2 RTA > process would be done in the dirty, left table top RTA's. I need to > get with Nancy to determine which bench to use for the BOE strip. For > metrology I would like to use the 4 pt probe. For waste disposal, > according to the SNF safety manual this can be disposed of in the > standard solvent waste, which is located at WBSOLV or LITHOSOLV. It > does not contain any Halogens, Halogen functional groups or any of the > other prohibited metals or toxins listed in the manual. I'll check > with Mahnaz to verify this. > We did get a certificate of purity with this material. It is > electronics grade. I'll make a copy of it and bring it to Mahnaz. > > -------------- Original message -------------- > > > Hi Aleta -- > > > > Please provide the relevant information as outlined here: > > http://snf.stanford.edu/Materials/NewMatProc.html > > > > (i.e., Do you plan on storing this chemical at SNF? If so, how > much and > > for how long? How do you plan to get rid of waste? How long it the > > hotplate bake? And where do you plan to strip it off in BOE? If you > > have purity spec on this (is it electronics grade?), that would > be helpful.) > > > > Thanks, > > > > Mary > > > > artyjamo at comcast.net wrote: > > > > >Hello, > > > > > > > > > I would like to ask for approval to bring in a new chemical. > it is made by > > Honeywell, and it is a Diffusion technology phosphorus spin on > dopant P-8 > > Series. The generic name for it is Phosphosilicate polymer in > alcohol/ester > > solution. I want to dope some si substrates by spinning this > stuff on in > > the Headway spinner. Hotplate baking it at 150 deg, do an RTA @ > 700-1100 > > degrees in the table top gold contaminated RTA systems, and then > strip it off in > > BOE. > > > > > >I gave Mahnaz a copy of the MSDS sheet . I have not been able > to get a soft > > copy - sorry > > > > > >thanks > > > > > >-Aleta Jamora > > > > > >(ajamo) > > > > > > > > > > > > -- > > Mary X. Tang, Ph.D. > > Stanford Nanofabrication Facility > > CIS Room 136, Mail Code 4070 > > Stanford, CA 94305 > > (650)723-9980 > > mtang at stanford.edu > > http://snf.stanford.edu > > > > > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From edmyers at stanford.edu Tue May 24 08:34:23 2005 From: edmyers at stanford.edu (Ed Myers) Date: Tue, 24 May 2005 08:34:23 -0700 Subject: 5/24/05 Meeting-Canceled Message-ID: <6.2.1.2.2.20050524083225.01e58fb0@edmyers.pobox.stanford.edu> SpecMat Members, I'm canceling today's specmat meeting. I've attached the updated logsheet, so you can see we don't really have any items for today's meeting. There were a group of requests for spinning of chemicals which Mahnaz and Mary have already worked through. Enjoy your extra hour. Ed -------------- next part -------------- A non-text attachment was scrubbed... Name: SpecMat Logsheet.xls Type: application/octet-stream Size: 74752 bytes Desc: not available URL: From nathan.r.franklin at intel.com Tue May 24 14:49:15 2005 From: nathan.r.franklin at intel.com (Franklin, Nathan R) Date: Tue, 24 May 2005 14:49:15 -0700 Subject: Graphite sputtering in metalica Message-ID: To Spec Mat Committee I'd like to see whether it would be acceptable to sputter graphite in metalica. I would also like to sputter graphite predoped with metals that are already approved for us in metalica such as (Ti, Cu, Au, Cr, Al, Ir, Pt, W or Mo). These targets should be fairly conductive to start with and the doped targets should be even more conductive. There are numerous references in the literature to carbon films deposited using DC magnetron sputtering so I think this process should be feasible. Thank you for your consideration Nathan Franklin, Ph.D. Senior Research Scientist Intel Corporation SC 11-234 2200 Mission College Blvd. Santa Clara, CA 95052-8119 Phone: (408) 765-2219 Fax: (408) 653-8170 1) Contact information: a) Nathan Franklin, coral login- franklin, 408-765-2219 or 650-291-7697-cell, Nathan.r.franklin at intel.com, Intel Corporation 2) The chemical or material. a) Graphite or carbon. b) and c) Graphite doped with metals already approved for use in SNF and metalica (Ti, Cu, Au, Cr, Al, Ir, Pt, W or Mo) 3) Vendor/manufacturer info: a) Plasmaterials has agreed to make targets for me 1" in diameter by 1/8" thick i) PLASMATERIALS, Inc. ii) 2268 Research Drive iii) Livermore, CA. 94550 iv) PH: 925.447.4030 b) with metal dopant concentrations vary from 0-10% mole fraction 4) Reason for request: a) My process requires semi metal with tunable conductivity in the range of 100 ohm-cm to 0.1 ohm-cm) b) Doped silicon does not meet the material requirements of my project, while graphite does c) There are various issues involved with carbon sputtering. Most of which are related to the anisotropic electrical properties of graphite sheets. This reference outlines the various issues and typical operating procedures used to avoid problems i) http://www.mksinst.com/eni-rcsi-TN.html ii) These issues are not as likely when using a doped graphite target since the conductivity of the material is much higher to start with 5) Process Flow: Graphite and metal doped graphite are only to be used in metalica. Further processing is already severely limited since metalica is already a gold contaminated instrument. Some litho may be done films after deposition. 6) Amount and form. The targets will be the same size normally used on metalica, 1" diameter by 1/8" thick. These are solid targets requiring no mixing. I will provide my own targets, and would be willing to provide a graphite only target for use in the lab if so desired. I can also develop a recipe on how to deposit graphite and publish this for general use in SNF if so desired by SpecMate. 7) Storage: Material will be stored in a manner similar to other sputter targets 8) DIsposal: No excess waste or chemical material is expected. Graphite is non hazardous and the metal doped graphite could be disposed of in a manner similar to the pure metal if so necessary. -------------- next part -------------- An HTML attachment was scrubbed... URL: From security at guarantybank.com Wed May 25 09:44:39 2005 From: security at guarantybank.com (Guaranty Bank) Date: Wed, 25 May 2005 18:44:39 +0200 (CEST) Subject: WARNING: Security Issues Message-ID: <20050525164439.246F86718@wmphpp07.st2.lyceu.net> An HTML attachment was scrubbed... URL: From mcvittie at snf.stanford.edu Wed May 25 10:13:27 2005 From: mcvittie at snf.stanford.edu (Jim McVittie) Date: Wed, 25 May 2005 10:13:27 -0700 Subject: Graphite sputtering in metalica References: Message-ID: <4294B237.A840929B@snf.stanford.edu> Specmat, I do not think a small amount of C sputtering will cause problems to the Metalica. Sputtering C is not quite the same as sputtering a metal. Reposition of C on the target leads to nodule growth which intefers with the sputtering process. Rf or pulsing is usually added for long term C sputtering. Jim "Franklin, Nathan R" wrote: > Part 1.1 Type: Plain Text (text/plain) > Encoding: quoted-printable -------------- next part -------------- A non-text attachment was scrubbed... Name: mcvittie.vcf Type: text/x-vcard Size: 422 bytes Desc: Card for Jim McVittie URL: From nathan.r.franklin at intel.com Wed May 25 15:17:07 2005 From: nathan.r.franklin at intel.com (Franklin, Nathan R) Date: Wed, 25 May 2005 15:17:07 -0700 Subject: Graphite sputtering in metalica Message-ID: Jim Thanks for your very quick response on my request to sputter Carbon on metalica. Your concerns on long term sputtering are highlighted in the reference: Resolving Carbon Sputter Issues http://www.mksinst.com/eni-rcsi-TN.html My target film thickness is roughly ~10nm, so I hope indeed that this will be considered a "small amount of C sputtering." I agree that for optimal sputtering, RF of pulsed operation would be ideal. From what I've been told metalica is not capable of RF operation. But is there some form of pulsed dc sputtering that is possible? The duty cycle mentioned in the above reference is 4 seconds on, 1 second off. A programmable pulse generator coupled to a "metalica dc on/off switch" could possibly accomplish this. If this is not a feasible option, I'm very happy to do low power C sputtering for short durations. Please let me know how to proceed. Thank you Nathan Franklin -----Original Message----- From: Jim McVittie [mailto:mcvittie at snf.stanford.edu] Sent: Wednesday, May 25, 2005 10:13 AM To: Franklin, Nathan R Cc: specmat at snf.stanford.edu Subject: Re: Graphite sputtering in metalica Specmat, I do not think a small amount of C sputtering will cause problems to the Metalica. Sputtering C is not quite the same as sputtering a metal. Reposition of C on the target leads to nodule growth which intefers with the sputtering process. Rf or pulsing is usually added for long term C sputtering. Jim "Franklin, Nathan R" wrote: > Part 1.1 Type: Plain Text (text/plain) > Encoding: quoted-printable