[Fwd: Mobility data for Mn impurities in MBE devices]

Michael Deal mdeal at stanford.edu
Thu May 5 16:28:48 PDT 2005

This paper says that Mn doesn't adversely affect GaAs/AlGaAs devices, but 
it doesn't say anything about Si devices (in which Mn reportedly intorduces 
a deep level).         -mike

At 04:16 PM 5/5/2005, Mary Tang wrote:

>Message-ID: <1115323295.427a7b9f32904 at webmail.stanford.edu>
>Date: Thu,  5 May 2005 13:01:35 -0700
>From: Betty Young <bayoung at stanford.edu>
>To: mtang at stanford.edu
>Cc: atomada at stanford.edu, bayoung at stanford.edu, atomada at stanford.edu
>Subject: Mobility data for Mn impurities in MBE devices
>MIME-Version: 1.0
>Content-Type: multipart/mixed; 
>User-Agent: Internet Messaging Program (IMP) 3.2.7
>X-Authenticated-User: bayoung
>Hi Mary,
>In scanning the literature some more I discovered an important paper
>(summarized below).
>K. Wagenhuber, et. al. "Influence of Mn Contamination on High Mobility
>GaAs/AlGaAs Heterostructures" (arXiv:cond-mat/0404098 v2 6 April 2004)
>In particular, the authors of the paper show how Mn impurities introduced
>into an MBE system (GaAs/AlGaAs samples grown at 635 deg C) had essentially
>zero effect on the electron mobility of devices fabricated without
>intentional inclusion of Mn impurities.  This data is shown in Figure 2 of
>the paper. The measured mobilities (cm^2/Vs) were of order 5e6 for the
>undoped samples and 1e6 for the heavily doped samples (2%-5% Mn). Most
>importantly, no memory effect was observed!
>I hope that the results will help your committee decide to allow 0.2%
>Mn-doped Al in the SCT!
>If you wish additional data please let me know and I will try to provide
>things as soon as possible.
>  Betty
>Content-Type: ; name="Mn_mobility_effect.pdf"
>Content-Disposition: attachment; filename="Mn_mobility_effect.pdf"

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