[Fwd: Mobility data for Mn impurities in MBE devices]

Michael Deal mdeal at stanford.edu
Fri May 6 07:51:27 PDT 2005


Terman Engineering Library apparently has it:

1) TK7871.85 .D453 1998 1   STACKS
(p. 475).

if someone wants to get it.     -mike




At 06:14 PM 5/5/2005, John Shott wrote:
>Jim, Betty, and Specmat members:
>
>Can anyone get hold of the 1998 MRS Symposium Proceedings?  Apparently 
>this was published as Volume 510 of the Materials Research Society 
>Symposium Proceedings Series.
>
>In particular, I note the following abstract that claims to have studied 
>dark-current generation in CCD image sensors that, I would think, would be 
>particularly relevant to concerns on the impact of Mn on lifetime ... and 
>it is a reasonably current paper.
>
>2:15 PM D9.3
>DEEP-LEVEL TRAPS IN CCD IMAGE SENSORS. William C. McColgin, James P. 
>Lavine, Charles V. Stancampiano, and Jeffrey B. Russell, Eastman Kodak 
>Company, Microelectronics Technology Division, Rochester, NY.
>
>The ability of CCD image sensors to integrate weak signals for extended 
>times makes them highly sensitive detectors of charge-generating, 
>deep-level traps in silicon. Such traps add undesirable noise to imagers. 
>Using Dark Current Spectroscopy (DCS)1 one can investigate such traps at 
>concentrations as low as 107/cm3. In conjunction with deliberate 
>contamination experiments, we have characterized nearly a dozen distinct 
>dark-current-generating traps in silicon. These include iron, manganese, 
>nickel, cobalt, gold, platinum, and other traps as yet unidentified. 
>Physically, they range from large extended defects to isolated contaminant 
>atoms at substitutional or interstitial lattice sites. Electrically, their 
>dark current generation rates span the range from over 300,000 e-/s at 
>55ºC to as few as 2 e-/s. The weakest of these lie as far as 0.27 eV off 
>mid-gap, but their generation rate and number contribute to the linewidth 
>of peaks from stronger traps in the dark current spectrum. The efficiency 
>of the gettering employed in the CCD manufacture can be gauged by 
>monitoring the levels of these traps in completed devices.
>1. W.C. McColgin et al., MRS Symp. Proc. 378, 713 (1995).
>
>Certainly, based on this abstract, I would think that this paper would be 
>of great interest to us if we can get a copy of it.
>
>Talk to you later,
>
>John
>
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