[Fwd: Mobility data for Mn impurities in MBE devices]
bayoung at stanford.edu
Fri May 6 08:50:30 PDT 2005
Sounds like an important article. Unfortunately I am at SCU until late today
so cannot get the book. I will see if I can get someone at Stanford in
physics to go get it for us.
Quoting Michael Deal <mdeal at stanford.edu>:
> Terman Engineering Library apparently has it:
> 1) TK7871.85 .D453 1998 1 STACKS
> (p. 475).
> if someone wants to get it. -mike
> At 06:14 PM 5/5/2005, John Shott wrote:
> >Jim, Betty, and Specmat members:
> >Can anyone get hold of the 1998 MRS Symposium Proceedings? Apparently
> >this was published as Volume 510 of the Materials Research Society
> >Symposium Proceedings Series.
> >In particular, I note the following abstract that claims to have studied
> >dark-current generation in CCD image sensors that, I would think, would
> >particularly relevant to concerns on the impact of Mn on lifetime ...
> >it is a reasonably current paper.
> >2:15 PM D9.3
> >DEEP-LEVEL TRAPS IN CCD IMAGE SENSORS. William C. McColgin, James P.
> >Lavine, Charles V. Stancampiano, and Jeffrey B. Russell, Eastman Kodak
> >Company, Microelectronics Technology Division, Rochester, NY.
> >The ability of CCD image sensors to integrate weak signals for extended
> >times makes them highly sensitive detectors of charge-generating,
> >deep-level traps in silicon. Such traps add undesirable noise to
> >Using Dark Current Spectroscopy (DCS)1 one can investigate such traps at
> >concentrations as low as 107/cm3. In conjunction with deliberate
> >contamination experiments, we have characterized nearly a dozen distinct
> >dark-current-generating traps in silicon. These include iron, manganese,
> >nickel, cobalt, gold, platinum, and other traps as yet unidentified.
> >Physically, they range from large extended defects to isolated
> >atoms at substitutional or interstitial lattice sites. Electrically,
> >dark current generation rates span the range from over 300,000 e-/s at
> >55ºC to as few as 2 e-/s. The weakest of these lie as far as 0.27 eV off
> >mid-gap, but their generation rate and number contribute to the
> >of peaks from stronger traps in the dark current spectrum. The
> >of the gettering employed in the CCD manufacture can be gauged by
> >monitoring the levels of these traps in completed devices.
> >1. W.C. McColgin et al., MRS Symp. Proc. 378, 713 (1995).
> >Certainly, based on this abstract, I would think that this paper would
> >of great interest to us if we can get a copy of it.
> >Talk to you later,
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