mtang at stanford.edu
Wed Nov 23 15:06:42 PST 2005
Hi Yan --
I'm sorry, but I think we really need more specific detail about your
process flow. For example... Is your starting material 100 mm silicon?
If so, when does it become "pieces"? And how? Processing pieces in
gryphon, for example, may be a problem. Cleaning your pieces may be tricky
at some steps as well, and you may need to obtain and decontaminate labware
to do this.
Could you please outline your process flow in detail, including every
pre-deposition or pre-diffusion clean, resist coat, aligner (I am not sure
which aligner you can use pieces in which has one micron resolution),
develop, etch and resist clean step? If you know which equipment you will
be using at each of these steps, it would be helpful. If you have any
specific critical process requirements, it would also be helpful.
Quoting yzhu at ee.ucr.edu:
> I have asked some process last week, they will be: Dry oxide + Ti
> (Gryphon) + LTO, (Ti is cover with LTO) and then I need deposit poly si,
> which machine I can use to deposit poly? After the photo process, I wish
> to etch poly and stop at oxide, then use amtetcher to etch oxide and stop
> at si substrate. The poly thickness will be around 2500A, because it is
> the gate poly, so the feature size is 1um. The underlying LTO is not
> important, because they also need to be etched away with Amtetcher. Later
> on, the process just is deposit thick oxide and make contact for metal
> pattern. The sample I processed are mainly pieces.
> So I still have two concerns: 1. is the STS DRIE best choice for poly
> etching. 2. how to deal with pieces with Amtetcher.
> Thanks for your consideration.
> Yan zhu
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