ALD HfO2 in Prof. McIntyre's Lab
ratiug at stanford.edu
Wed Oct 5 10:59:00 PDT 2005
After ALD HfO2 deposition, the wafers will go to the following tools in SNF:
SCT sputtering system for metal gate deposition
P5000 for metal etch
AMT etcher for SiO2 etch
Gryphon for Al deposition
Before metal contaminated wafers are loaded into furnaces (LTO or FGA), they
should be cleaned in metal wetbench with PRS1000 for 10min.
----- Original Message -----
From: "Jim McVittie" <mcvittie at snf.stanford.edu>
To: "Raghavasimhan Sreenivasan" <raghavs at stanford.edu>
Cc: "Ed Myers" <edmyers at stanford.edu>; "Ching-Huang Lu"
<ratiug at stanford.edu>; <specmat at snf.stanford.edu>
Sent: Wednesday, October 05, 2005 9:52 AM
Subject: Re: ALD HfO2 in Prof. McIntyre's Lab
> Hi Raghav,
> I agree we need to consider any interference. I have a number of old TXRF
> reports. I will see if I have any for Hf. I think it would be helpful if
> were more specific about what tool you want to use in SNF. We are most
> concerned about the furnances and the final cleaning baths before going
> the furnaces. Jim
> Raghavasimhan Sreenivasan wrote:
>> Hi Ed
>> i am Raghav, a student in Paul McIntyre's group working on ALD of HfO2.
>> far as i remember, the TXRF report said that a number of transition
>> overlap with the Hf signal and iron is one of them. the estimate made in
>> the TXRF is on the higher side and has some contribution from the Hf in
>> HfO2. hope this helps clarify things.
>> Quoting Ed Myers <edmyers at stanford.edu>:
>> > Ching-Huang,
>> > I looked over your request. SpecMat has established TXRF limits for
>> > our
>> > Clean and SemiClean classifications. Unfortunately, your data shows
>> > you
>> > slightly higher than the allowed contamination limits (1E12
>> > atoms/cm2). Since one of the offenders is iron, I am reluctant to
>> > recommend approval of your sample. Is there a chance the system could
>> > be
>> > cleaned to clear up some of the contamination?
>> > Regards,
>> > Ed
>> > At 10:59 AM 10/4/2005, Ching-Huang Lu wrote:
>> > >Dear Committee,
>> > >
>> > >Raghav and I have been trying to build transistors with ALD HfO2 in
>> > Prof.
>> > >McIntyre's Lab.
>> > >We would like to get this ALD film certified so that we can start the
>> > >processing in the semi-clean tools.
>> > >Attached please find the TXRF data file. This TXRF data obtained on
>> > >our
>> > >ALD HfO2 shows that the film is pretty clean.
>> > >Please let us know if you have any question or need more information.
>> > >
>> > >thanks
>> > >
>> > >Ching-Huang
>> > >
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