From vidyagv at gmail.com  Thu Sep  1 11:46:49 2005
From: vidyagv at gmail.com (Vidya V)
Date: Thu, 1 Sep 2005 11:46:49 -0700
Subject: Request for processinf BCB
Message-ID: <616a357905090111462faab54c@mail.gmail.com>

Dear Specmat members, 
I would like to make a request to process 4022-35 PhotoBCB in the following 
manner:
1. Clean wafer
2. Spin coat adhesion promoter, AP3000
3. Spincoat BCB
4. Softbake for 60 seconds at 65 degrees C
5. Expose
6. Pre-develop bake the wafer for 5 minutes at 60 degrees
7. Develop in the DS3000 developer which is at 40 degrees for 1 minute
8. rinse in room temperature developer for a few minutes
9. Spin dry.

The point of concern here could be that , the developer. which is benzene 
based, needs to be at an elevated temperature for optimum results. PLease 
let me know how/where this can be done. 
APpreciate you r co-operation, the MSDS for DS3000 and the processing 
procedures are attached with this email.

Regards,
Vidya
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From edmyers at stanford.edu  Fri Sep  2 11:26:37 2005
From: edmyers at stanford.edu (Ed Myers)
Date: Fri, 02 Sep 2005 11:26:37 -0700
Subject: nickel silicide 
In-Reply-To: <Pine.GSO.4.58.0508021446431.19525@eelab01.ee.ucla.edu>
References: <Pine.GSO.4.58.0508021446431.19525@eelab01.ee.ucla.edu>
Message-ID: <6.2.1.2.2.20050902111850.0423f7a8@edmyers.pobox.stanford.edu>

Ritesh, Ahmet and Venatagirish,

SpecMat has reviewed your request for Ni processing.  Since you have 
withdrawn your request for poly deposition on Ni silicide we can approve 
the remainder of your request.

Nickel has been and will remain under the SemicleanB material classification.

Regards,


  At 03:00 PM 8/2/2005, Ritesh J wrote:
>Hello
>
>Currently we 3 labmates from UCLA (riteshj, nvgirish, tura) use nickel
>silicided wafers (deposition of nickel and then silicide in AG4108) for
>the follwoing processes:
>1) After nickel silicide, deposit LTO (~5000A)
>2) Etch LTO (contact etch, stop at nickel silicide) in AMT etcher
>3) Etch Nitride ((stop at nickel silicide) in AMT etcher
>4) Deposit Poly (nickel silicide covered with 5000A LTO (right after
>LTO)) (?)
>5) Poly etch in P5000 after the previous step (silicide is covered)
>6) Deposit Aluminum in Gryphon
>
>The first three processes had been previously approved for a labmate who had
>worked with nickel silicide. If possible, Can you add Nickel to the
>standard metal list ? THank you,
>
>riteshj , tura , nvgirish
>(UCLA)





From mahnaz at snf.stanford.edu  Tue Sep  6 08:27:07 2005
From: mahnaz at snf.stanford.edu (Mahnaz Mansourpour)
Date: Tue, 06 Sep 2005 08:27:07 -0700
Subject: [Fwd: approved materials for headway/karlsuss]
Message-ID: <431DB54B.3050009@snf.stanford.edu>



-------- Original Message --------
Subject: 	approved materials for headway/karlsuss
Date: 	Fri, 2 Sep 2005 09:43:06 -0700
From: 	Simon Fishel <sfishel at stanford.edu>
To: 	'Mahnaz Mansourpour' <mahnaz at snf.stanford.edu>



Mahnaz,

I was wondering if calcium fluoride glass is an approved substrate for
use in the headway and the karlsuss.  Please let me know.

Thanks,

Simon


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From rissman at stanford.edu  Tue Sep  6 08:59:24 2005
From: rissman at stanford.edu (Paul Rissman)
Date: Tue, 06 Sep 2005 08:59:24 -0700
Subject: [Fwd: approved materials for headway/karlsuss]
Message-ID: <6.2.1.2.2.20050906085836.02bcf938@rissman.pobox.stanford.edu>

It is my understanding that other than being mildly hygroscopic, calcium 
fluoride is relatively intert.

>X-Sieve: CMU Sieve 2.2
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>Mailing-List: contact specmat-help at snf.stanford.edu; run by ezmlm
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>Delivered-To: mailing list specmat at snf.stanford.edu
>Date: Tue, 06 Sep 2005 08:27:07 -0700
>From: Mahnaz Mansourpour <mahnaz at snf.stanford.edu>
>Organization: SNF
>User-Agent: Mozilla/5.0 (Windows; U; Windows NT 5.0; en-US; rv:1.7.2) 
>Gecko/20040804 Netscape/7.2 (ax)
>X-Accept-Language: en-us, en
>To: specmat <specmat at snf.stanford.edu>
>Subject: [Fwd: approved materials for headway/karlsuss]
>
>
>
>-------- Original Message --------
>Subject: approved materials for headway/karlsuss
>Date: Fri, 2 Sep 2005 09:43:06 -0700
>From: Simon Fishel <mailto:sfishel at stanford.edu><sfishel at stanford.edu>
>To: 'Mahnaz Mansourpour' 
><mailto:mahnaz at snf.stanford.edu><mahnaz at snf.stanford.edu>
>
>
>
>Mahnaz,
>
>I was wondering if calcium fluoride glass is an approved substrate for
>use in the headway and the karlsuss.  Please let me know.
>
>Thanks,
>
>Simon
>



From mtang at snf.stanford.edu  Tue Sep  6 09:12:51 2005
From: mtang at snf.stanford.edu (Mary Tang)
Date: Tue, 06 Sep 2005 09:12:51 -0700
Subject: [Fwd: approved materials for headway/karlsuss]
In-Reply-To: <431DB54B.3050009@snf.stanford.edu>
References: <431DB54B.3050009@snf.stanford.edu>
Message-ID: <431DC003.6010907@snf.stanford.edu>

Hi Simon/Mahnaz --

Although in principle, it should be safe to use, could we get a little 
more information?  CaF has been used in the lab, but there are a couple 
of concerns with patterning it...

1.  Could we get a process flow?  Will the CaF be cleaned in the lab 
prior to lithography?  After lithography, will it be etched in the lab?
2.  What are the dimensions of the CaF substrate?  (The contact aligners 
[and even the headway] can tolerate only a limited range of substrate 
thicknesses.)
3.  And just out of curiosity, what are the general dimensions of the 
features to be patterned and with what alignment precision, if any?

Thanks,

Mary

Mahnaz Mansourpour wrote:

>
>
> -------- Original Message --------
> Subject: 	approved materials for headway/karlsuss
> Date: 	Fri, 2 Sep 2005 09:43:06 -0700
> From: 	Simon Fishel <sfishel at stanford.edu>
> To: 	'Mahnaz Mansourpour' <mahnaz at snf.stanford.edu>
>
>
>
>Mahnaz,
>
>I was wondering if calcium fluoride glass is an approved substrate for
>use in the headway and the karlsuss.  Please let me know.
>
>Thanks,
>
>Simon
>
>  
>


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu




From mtang at snf.stanford.edu  Tue Sep  6 13:51:34 2005
From: mtang at snf.stanford.edu (Mary Tang)
Date: Tue, 06 Sep 2005 13:51:34 -0700
Subject: [Fwd: Re: [Fwd: approved materials for headway/karlsuss]]
Message-ID: <431E0156.8030103@snf.stanford.edu>

Hi everyone --

Sounds good to me (the thickness should be fine and as long as there is 
no etching, it should be OK.)  Any objections?

Mary

-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu

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From: "Simon Fishel" <sfishel at stanford.edu>
Subject: RE: [Fwd: approved materials for headway/karlsuss]
Date: Tue, 6 Sep 2005 10:22:23 -0700
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From rissman at stanford.edu  Tue Sep  6 14:02:29 2005
From: rissman at stanford.edu (Paul Rissman)
Date: Tue, 06 Sep 2005 14:02:29 -0700
Subject: [Fwd: Re: [Fwd: approved materials for headway/karlsuss]]
In-Reply-To: <431E0156.8030103@snf.stanford.edu>
References: <431E0156.8030103@snf.stanford.edu>
Message-ID: <6.2.1.2.2.20050906140128.02e84608@rissman.pobox.stanford.edu>

I agree.

At 01:51 PM 9/6/2005, Mary Tang wrote:
>Hi everyone --
>
>Sounds good to me (the thickness should be fine and as long as there is no 
>etching, it should be OK.)  Any objections?
>
>Mary
>
>--
>Mary X. Tang, Ph.D.
>Stanford Nanofabrication Facility
>CIS Room 136, Mail Code 4070
>Stanford, CA  94305
>(650)723-9980
>mtang at stanford.edu
>http://snf.stanford.edu
>
>
>
>Return-Path: <sfishel at stanford.edu>
>Delivered-To: mtang at snf.stanford.edu
>Received: (qmail 7240 invoked from network); 6 Sep 2005 17:22:35 -0000
>Received: from smtp1.stanford.edu (171.67.16.123)
>   by snf.stanford.edu with SMTP; 6 Sep 2005 17:22:35 -0000
>Received: from your495cd88010 (DNab407ae9.Stanford.EDU [171.64.122.233])
>         by smtp1.Stanford.EDU (8.12.11/8.12.11) with ESMTP id j86HMQm3029036
>         for <mtang at snf.stanford.edu>; Tue, 6 Sep 2005 10:22:33 -0700
>From: "Simon Fishel" <sfishel at stanford.edu>
>To: "'Mary Tang'" <mtang at snf.stanford.edu>
>Subject: RE: [Fwd: approved materials for headway/karlsuss]
>Date: Tue, 6 Sep 2005 10:22:23 -0700
>Message-ID: <000a01c5b307$8c158250$e97a40ab at your495cd88010>
>MIME-Version: 1.0
>Content-Type: text/plain;
>         charset="us-ascii"
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>X-MimeOLE: Produced By Microsoft MimeOLE V6.00.2900.2527
>In-Reply-To: <431DC003.6010907 at snf.stanford.edu>
>Importance: Normal
>
>Mary,
>
>The samples are cleaned in our lab prior to bringing them into SNF, so
>we will just bake them in the Singe oven before coating them in the
>Headway.  Depending on the resist we end up using, most likely SPR220-7,
>we will then do the appropriate pre-exposure bake, expose the samples on
>the Karlsuss, and develop them in the solvent bench.  The resist itself
>serves as our features, so there is no etch involved.
>
>The samples are circular, 3/4 inch in diameter, and about 0.5 mm thick.
>We are only patterning one layer, and our features are on the order of
>millimeters, so very little alignment precision is needed.
>
>Let me know if you need any more information.
>
>Simon
>
>-----Original Message-----
>From: Mary Tang [mailto:mtang at snf.stanford.edu]
>Sent: Tuesday, September 06, 2005 9:13 AM
>To: Mahnaz Mansourpour
>Cc: specmat; sfishel at stanford.edu
>Subject: Re: [Fwd: approved materials for headway/karlsuss]
>
>Hi Simon/Mahnaz --
>
>Although in principle, it should be safe to use, could we get a little
>more information?  CaF has been used in the lab, but there are a couple
>of concerns with patterning it...
>
>1.  Could we get a process flow?  Will the CaF be cleaned in the lab
>prior to lithography?  After lithography, will it be etched in the lab?
>2.  What are the dimensions of the CaF substrate?  (The contact aligners
>
>[and even the headway] can tolerate only a limited range of substrate
>thicknesses.)
>3.  And just out of curiosity, what are the general dimensions of the
>features to be patterned and with what alignment precision, if any?
>
>Thanks,
>
>Mary
>
>Mahnaz Mansourpour wrote:
>
> >
> >
> > -------- Original Message --------
> > Subject:      approved materials for headway/karlsuss
> > Date:         Fri, 2 Sep 2005 09:43:06 -0700
> > From:         Simon Fishel <sfishel at stanford.edu>
> > To:   'Mahnaz Mansourpour' <mahnaz at snf.stanford.edu>
> >
> >
> >
> >Mahnaz,
> >
> >I was wondering if calcium fluoride glass is an approved substrate for
> >use in the headway and the karlsuss.  Please let me know.
> >
> >Thanks,
> >
> >Simon
> >
> >
> >
>
>
>--
>Mary X. Tang, Ph.D.
>Stanford Nanofabrication Facility
>CIS Room 136, Mail Code 4070
>Stanford, CA  94305
>(650)723-9980
>mtang at stanford.edu
>http://snf.stanford.edu



From mtang at snf.stanford.edu  Tue Sep  6 14:26:14 2005
From: mtang at snf.stanford.edu (Mary Tang)
Date: Tue, 06 Sep 2005 14:26:14 -0700
Subject: [Fwd: Re: [Fwd: approved materials for headway/karlsuss]]
In-Reply-To: <6.2.1.2.2.20050906140128.02e84608@rissman.pobox.stanford.edu>
References: <431E0156.8030103@snf.stanford.edu> <6.2.1.2.2.20050906140128.02e84608@rissman.pobox.stanford.edu>
Message-ID: <431E0976.6020800@snf.stanford.edu>

Hi Simon --

Three of us agree (Paul, Mahnaz, and me.)  I think that's a SpecMat 
quorum.  Your request is filed and approved.

Thanks!

Mary

Paul Rissman wrote:

> I agree.
>
> At 01:51 PM 9/6/2005, Mary Tang wrote:
>
>> Hi everyone --
>>
>> Sounds good to me (the thickness should be fine and as long as there 
>> is no etching, it should be OK.)  Any objections?
>>
>> Mary
>>
>> -- 
>> Mary X. Tang, Ph.D.
>> Stanford Nanofabrication Facility
>> CIS Room 136, Mail Code 4070
>> Stanford, CA  94305
>> (650)723-9980
>> mtang at stanford.edu
>> http://snf.stanford.edu
>>
>>
>>
>> Return-Path: <sfishel at stanford.edu>
>> Delivered-To: mtang at snf.stanford.edu
>> Received: (qmail 7240 invoked from network); 6 Sep 2005 17:22:35 -0000
>> Received: from smtp1.stanford.edu (171.67.16.123)
>>   by snf.stanford.edu with SMTP; 6 Sep 2005 17:22:35 -0000
>> Received: from your495cd88010 (DNab407ae9.Stanford.EDU [171.64.122.233])
>>         by smtp1.Stanford.EDU (8.12.11/8.12.11) with ESMTP id 
>> j86HMQm3029036
>>         for <mtang at snf.stanford.edu>; Tue, 6 Sep 2005 10:22:33 -0700
>> From: "Simon Fishel" <sfishel at stanford.edu>
>> To: "'Mary Tang'" <mtang at snf.stanford.edu>
>> Subject: RE: [Fwd: approved materials for headway/karlsuss]
>> Date: Tue, 6 Sep 2005 10:22:23 -0700
>> Message-ID: <000a01c5b307$8c158250$e97a40ab at your495cd88010>
>> MIME-Version: 1.0
>> Content-Type: text/plain;
>>         charset="us-ascii"
>> Content-Transfer-Encoding: 7bit
>> X-Priority: 3 (Normal)
>> X-MSMail-Priority: Normal
>> X-Mailer: Microsoft Outlook, Build 10.0.2627
>> X-MimeOLE: Produced By Microsoft MimeOLE V6.00.2900.2527
>> In-Reply-To: <431DC003.6010907 at snf.stanford.edu>
>> Importance: Normal
>>
>> Mary,
>>
>> The samples are cleaned in our lab prior to bringing them into SNF, so
>> we will just bake them in the Singe oven before coating them in the
>> Headway.  Depending on the resist we end up using, most likely SPR220-7,
>> we will then do the appropriate pre-exposure bake, expose the samples on
>> the Karlsuss, and develop them in the solvent bench.  The resist itself
>> serves as our features, so there is no etch involved.
>>
>> The samples are circular, 3/4 inch in diameter, and about 0.5 mm thick.
>> We are only patterning one layer, and our features are on the order of
>> millimeters, so very little alignment precision is needed.
>>
>> Let me know if you need any more information.
>>
>> Simon
>>
>> -----Original Message-----
>> From: Mary Tang [mailto:mtang at snf.stanford.edu]
>> Sent: Tuesday, September 06, 2005 9:13 AM
>> To: Mahnaz Mansourpour
>> Cc: specmat; sfishel at stanford.edu
>> Subject: Re: [Fwd: approved materials for headway/karlsuss]
>>
>> Hi Simon/Mahnaz --
>>
>> Although in principle, it should be safe to use, could we get a little
>> more information?  CaF has been used in the lab, but there are a couple
>> of concerns with patterning it...
>>
>> 1.  Could we get a process flow?  Will the CaF be cleaned in the lab
>> prior to lithography?  After lithography, will it be etched in the lab?
>> 2.  What are the dimensions of the CaF substrate?  (The contact aligners
>>
>> [and even the headway] can tolerate only a limited range of substrate
>> thicknesses.)
>> 3.  And just out of curiosity, what are the general dimensions of the
>> features to be patterned and with what alignment precision, if any?
>>
>> Thanks,
>>
>> Mary
>>
>> Mahnaz Mansourpour wrote:
>>
>> >
>> >
>> > -------- Original Message --------
>> > Subject:      approved materials for headway/karlsuss
>> > Date:         Fri, 2 Sep 2005 09:43:06 -0700
>> > From:         Simon Fishel <sfishel at stanford.edu>
>> > To:   'Mahnaz Mansourpour' <mahnaz at snf.stanford.edu>
>> >
>> >
>> >
>> >Mahnaz,
>> >
>> >I was wondering if calcium fluoride glass is an approved substrate for
>> >use in the headway and the karlsuss.  Please let me know.
>> >
>> >Thanks,
>> >
>> >Simon
>> >
>> >
>> >
>>
>>
>> -- 
>> Mary X. Tang, Ph.D.
>> Stanford Nanofabrication Facility
>> CIS Room 136, Mail Code 4070
>> Stanford, CA  94305
>> (650)723-9980
>> mtang at stanford.edu
>> http://snf.stanford.edu
>


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu




From edmyers at stanford.edu  Tue Sep  6 14:29:41 2005
From: edmyers at stanford.edu (Ed Myers)
Date: Tue, 06 Sep 2005 14:29:41 -0700
Subject: Fwd: Selenious acid in fab
Message-ID: <6.2.1.2.2.20050906142916.041acd08@edmyers.pobox.stanford.edu>

SpecMat Members,

Here is another request.....

>X-Sieve: CMU Sieve 2.2
>X-Mailer: QUALCOMM Windows Eudora Version 5.2.1
>Date: Tue, 06 Sep 2005 12:44:18 -0700
>To: Ed Myers <edmyers at stanford.edu>
>From: Carl Faulkner <cmfaulkn at snf.stanford.edu>
>Subject: Selenious acid in fab
>
>Ed,
>
>I would like to try duplicating a result from a paper using selenium to 
>passivate the silicon surface.  This requires dissolving small quantities 
>of selenious acid in methanol (ending PH 4.5 or ~0.5mg Se/cc of 
>solution).  I would do this in personal labware (and either WBgeneral or 
>WBsolvent?) and the resulting wafer would only go into the Innotec 
>afterwards to be capped with Al (at that point there should be less than a 
>monolayer of Se terminating the Si dangling bonds present).  At the 
>moment, I only wish to try it so the quantities would be small.  If it 
>works, we would wish to run more wafers with different metals, though most 
>of the metals I can think of using are ones I deposit at Berkeley.  The 
>problem I see is that selenious acid is toxic and would generate hazardous 
>waste.  For the initial experiment, I would only generate ~300ml of 
>solution plus additional methanol to clean out the beaker.
>
>MSDS at https://fscimage.fishersci.com/msds/88641.htm
>
>Carl





From lll2002 at stanford.edu  Thu Sep  8 10:45:19 2005
From: lll2002 at stanford.edu (Mr Liangliang Li)
Date: Thu,  8 Sep 2005 10:45:19 -0700
Subject: new process by using 3 % NaOH
Message-ID: <1126201519.432078af1f8d1@webmail.stanford.edu>

Dear Sir/Madam:
   How are you?
   I want to use 3% NaOH solution to strip the resist off from an 8-inch
substrate, I hope I can get your permission. the following is the detailed
process I want to do on the wet bench general:

   1: I will get my own 3% NaOH solution and transfer it into the cleaning room
to the wet bench. I will mix NaOH powder with water or dilute 50% NaOH solution
outside of the cleanining room, to get 3% solution.
   2: I will get a large beaker (9 or 10 inch round size and 6-8 inch tall) and
bring it into the cleaning room.
   3: one 8-inch Printed circuit board substrate with a mask (made of negative
resist) on the top surface will be shipped from Intel. In our own lab, my
magnetic material will be deposited to cover the whole substrate. And then, I
will bring the substrate to the wet bench.
   4: in the wet bench general, I will soak the 8-inch substrate into the 3%
NaOH solution inside the big beaker and heat to 45 degree C for 30 mins. The
resist will be stripped off from the substate.
   5: After stripping, I will clean the wet bench and waste accordding to the
manual, the 8-inch substate will be taked out of the cleaning room immediately
and shipped back to Intel.

   In our own lab, I have tested the stability of the substate in 3% NaOH
solution at 45 C. It is really stable. The hot plate size is 8 inch by 8 inch
and the tank is 11-12 inch size. So we have enough space.

   Dear Sir/Madam, if you think this process is ok in the wet bench general,
please let me know.
   Thank you very much

best regards
liangliang li


From mtang at snf.stanford.edu  Thu Sep  8 11:02:55 2005
From: mtang at snf.stanford.edu (Mary Tang)
Date: Thu, 8 Sep 2005 11:02:55 -0700 (PDT)
Subject: new process by using 3 % NaOH
In-Reply-To: <1126201519.432078af1f8d1@webmail.stanford.edu>
Message-ID: <Pine.LNX.4.04.10509081059560.7259-100000@snf.stanford.edu>

Hi all --

I think this, in general, sounds OK.  The conditions that would make me
feel better are:

1.  Waste be collected locally and properly labeled for disposal (this
sounds like a lift-off process, and as we don't know what the materials
are, I don't feel comfortable putting it down the AWN.)

2.  Mixing should be done outside the lab.  We should reiterate the
procedures and policies for transporting chemicals to SNF, especially as
I'm not sure who this is, much less that he is aware of these policies in
practice.

How do these sound to you?

Mary

On Thu, 8 Sep 2005, Mr Liangliang Li wrote:

> Dear Sir/Madam:
>    How are you?
>    I want to use 3% NaOH solution to strip the resist off from an 8-inch
> substrate, I hope I can get your permission. the following is the detailed
> process I want to do on the wet bench general:
> 
>    1: I will get my own 3% NaOH solution and transfer it into the cleaning room
> to the wet bench. I will mix NaOH powder with water or dilute 50% NaOH solution
> outside of the cleanining room, to get 3% solution.
>    2: I will get a large beaker (9 or 10 inch round size and 6-8 inch tall) and
> bring it into the cleaning room.
>    3: one 8-inch Printed circuit board substrate with a mask (made of negative
> resist) on the top surface will be shipped from Intel. In our own lab, my
> magnetic material will be deposited to cover the whole substrate. And then, I
> will bring the substrate to the wet bench.
>    4: in the wet bench general, I will soak the 8-inch substrate into the 3%
> NaOH solution inside the big beaker and heat to 45 degree C for 30 mins. The
> resist will be stripped off from the substate.
>    5: After stripping, I will clean the wet bench and waste accordding to the
> manual, the 8-inch substate will be taked out of the cleaning room immediately
> and shipped back to Intel.
> 
>    In our own lab, I have tested the stability of the substate in 3% NaOH
> solution at 45 C. It is really stable. The hot plate size is 8 inch by 8 inch
> and the tank is 11-12 inch size. So we have enough space.
> 
>    Dear Sir/Madam, if you think this process is ok in the wet bench general,
> please let me know.
>    Thank you very much
> 
> best regards
> liangliang li
> 



From rissman at stanford.edu  Thu Sep  8 11:42:02 2005
From: rissman at stanford.edu (Paul Rissman)
Date: Thu, 08 Sep 2005 11:42:02 -0700
Subject: new process by using 3 % NaOH
In-Reply-To: <Pine.LNX.4.04.10509081059560.7259-100000@snf.stanford.edu>
References: <1126201519.432078af1f8d1@webmail.stanford.edu>
 <Pine.LNX.4.04.10509081059560.7259-100000@snf.stanford.edu>
Message-ID: <6.2.1.2.2.20050908114129.02b5c438@rissman.pobox.stanford.edu>

I agree with Mary.  Don't we need to know what will be etched for disposal 
reasons?

At 11:02 AM 9/8/2005, Mary Tang wrote:
>Hi all --
>
>I think this, in general, sounds OK.  The conditions that would make me
>feel better are:
>
>1.  Waste be collected locally and properly labeled for disposal (this
>sounds like a lift-off process, and as we don't know what the materials
>are, I don't feel comfortable putting it down the AWN.)
>
>2.  Mixing should be done outside the lab.  We should reiterate the
>procedures and policies for transporting chemicals to SNF, especially as
>I'm not sure who this is, much less that he is aware of these policies in
>practice.
>
>How do these sound to you?
>
>Mary
>
>On Thu, 8 Sep 2005, Mr Liangliang Li wrote:
>
> > Dear Sir/Madam:
> >    How are you?
> >    I want to use 3% NaOH solution to strip the resist off from an 8-inch
> > substrate, I hope I can get your permission. the following is the detailed
> > process I want to do on the wet bench general:
> >
> >    1: I will get my own 3% NaOH solution and transfer it into the 
> cleaning room
> > to the wet bench. I will mix NaOH powder with water or dilute 50% NaOH 
> solution
> > outside of the cleanining room, to get 3% solution.
> >    2: I will get a large beaker (9 or 10 inch round size and 6-8 inch 
> tall) and
> > bring it into the cleaning room.
> >    3: one 8-inch Printed circuit board substrate with a mask (made of 
> negative
> > resist) on the top surface will be shipped from Intel. In our own lab, my
> > magnetic material will be deposited to cover the whole substrate. And 
> then, I
> > will bring the substrate to the wet bench.
> >    4: in the wet bench general, I will soak the 8-inch substrate into 
> the 3%
> > NaOH solution inside the big beaker and heat to 45 degree C for 30 
> mins. The
> > resist will be stripped off from the substate.
> >    5: After stripping, I will clean the wet bench and waste accordding 
> to the
> > manual, the 8-inch substate will be taked out of the cleaning room 
> immediately
> > and shipped back to Intel.
> >
> >    In our own lab, I have tested the stability of the substate in 3% NaOH
> > solution at 45 C. It is really stable. The hot plate size is 8 inch by 
> 8 inch
> > and the tank is 11-12 inch size. So we have enough space.
> >
> >    Dear Sir/Madam, if you think this process is ok in the wet bench 
> general,
> > please let me know.
> >    Thank you very much
> >
> > best regards
> > liangliang li
> >



From mtang at snf.stanford.edu  Thu Sep  8 12:09:55 2005
From: mtang at snf.stanford.edu (Mary Tang)
Date: Thu, 8 Sep 2005 12:09:55 -0700 (PDT)
Subject: new process by using 3 % NaOH
In-Reply-To: <6.2.1.2.2.20050908114129.02b5c438@rissman.pobox.stanford.edu>
Message-ID: <Pine.LNX.4.04.10509081204330.7259-100000@snf.stanford.edu>

Hi Paul --

Good question.  The hazardous waste should be labelled appropriately by
the user.  Since he says he's done it before and it's stable, I'm perhaps
presuming that he knows what he's doing.  But you're right -- we should
ask because it's possible that the waste may require special attention
(like it might explode if it isn't addressed in time -- this actually
happened to some people in the lab above mine when I was in grad school
-- blew out a bunch of windows and trashed the chemical bench, though
luckily no one was seriously injured.)  We can ask him.

M

On Thu, 8 Sep 2005, Paul Rissman wrote:

> I agree with Mary.  Don't we need to know what will be etched for disposal 
> reasons?
> 
> At 11:02 AM 9/8/2005, Mary Tang wrote:
> >Hi all --
> >
> >I think this, in general, sounds OK.  The conditions that would make me
> >feel better are:
> >
> >1.  Waste be collected locally and properly labeled for disposal (this
> >sounds like a lift-off process, and as we don't know what the materials
> >are, I don't feel comfortable putting it down the AWN.)
> >
> >2.  Mixing should be done outside the lab.  We should reiterate the
> >procedures and policies for transporting chemicals to SNF, especially as
> >I'm not sure who this is, much less that he is aware of these policies in
> >practice.
> >
> >How do these sound to you?
> >
> >Mary
> >
> >On Thu, 8 Sep 2005, Mr Liangliang Li wrote:
> >
> > > Dear Sir/Madam:
> > >    How are you?
> > >    I want to use 3% NaOH solution to strip the resist off from an 8-inch
> > > substrate, I hope I can get your permission. the following is the detailed
> > > process I want to do on the wet bench general:
> > >
> > >    1: I will get my own 3% NaOH solution and transfer it into the 
> > cleaning room
> > > to the wet bench. I will mix NaOH powder with water or dilute 50% NaOH 
> > solution
> > > outside of the cleanining room, to get 3% solution.
> > >    2: I will get a large beaker (9 or 10 inch round size and 6-8 inch 
> > tall) and
> > > bring it into the cleaning room.
> > >    3: one 8-inch Printed circuit board substrate with a mask (made of 
> > negative
> > > resist) on the top surface will be shipped from Intel. In our own lab, my
> > > magnetic material will be deposited to cover the whole substrate. And 
> > then, I
> > > will bring the substrate to the wet bench.
> > >    4: in the wet bench general, I will soak the 8-inch substrate into 
> > the 3%
> > > NaOH solution inside the big beaker and heat to 45 degree C for 30 
> > mins. The
> > > resist will be stripped off from the substate.
> > >    5: After stripping, I will clean the wet bench and waste accordding 
> > to the
> > > manual, the 8-inch substate will be taked out of the cleaning room 
> > immediately
> > > and shipped back to Intel.
> > >
> > >    In our own lab, I have tested the stability of the substate in 3% NaOH
> > > solution at 45 C. It is really stable. The hot plate size is 8 inch by 
> > 8 inch
> > > and the tank is 11-12 inch size. So we have enough space.
> > >
> > >    Dear Sir/Madam, if you think this process is ok in the wet bench 
> > general,
> > > please let me know.
> > >    Thank you very much
> > >
> > > best regards
> > > liangliang li
> > >
> 



From edmyers at stanford.edu  Fri Sep  9 11:46:11 2005
From: edmyers at stanford.edu (Ed Myers)
Date: Fri, 09 Sep 2005 11:46:11 -0700
Subject: new process by using 3 % NaOH
In-Reply-To: <Pine.LNX.4.04.10509081204330.7259-100000@snf.stanford.edu>
References: <6.2.1.2.2.20050908114129.02b5c438@rissman.pobox.stanford.edu>
 <Pine.LNX.4.04.10509081204330.7259-100000@snf.stanford.edu>
Message-ID: <6.2.1.2.2.20050909114141.043fc150@edmyers.pobox.stanford.edu>

All,

The user stopped by and is anxious to get approval.  I feel we can approve 
this request under the following guidelines.

1)  Use his own, dedicated beakers.

2) All mixing of powders will be done outside of the lab.

3) Local collection and labeling of the waste.  The film he will be lifting 
off is a magnetic layer, but I do not know the composition.

If I don't hear any why we should not approve this request by mid-afternoon 
today (9/9), I will send him an approval email.

Ed



At 12:09 PM 9/8/2005, you wrote:
>Hi Paul --
>
>Good question.  The hazardous waste should be labelled appropriately by
>the user.  Since he says he's done it before and it's stable, I'm perhaps
>presuming that he knows what he's doing.  But you're right -- we should
>ask because it's possible that the waste may require special attention
>(like it might explode if it isn't addressed in time -- this actually
>happened to some people in the lab above mine when I was in grad school
>-- blew out a bunch of windows and trashed the chemical bench, though
>luckily no one was seriously injured.)  We can ask him.
>
>M
>
>On Thu, 8 Sep 2005, Paul Rissman wrote:
>
> > I agree with Mary.  Don't we need to know what will be etched for disposal
> > reasons?
> >
> > At 11:02 AM 9/8/2005, Mary Tang wrote:
> > >Hi all --
> > >
> > >I think this, in general, sounds OK.  The conditions that would make me
> > >feel better are:
> > >
> > >1.  Waste be collected locally and properly labeled for disposal (this
> > >sounds like a lift-off process, and as we don't know what the materials
> > >are, I don't feel comfortable putting it down the AWN.)
> > >
> > >2.  Mixing should be done outside the lab.  We should reiterate the
> > >procedures and policies for transporting chemicals to SNF, especially as
> > >I'm not sure who this is, much less that he is aware of these policies in
> > >practice.
> > >
> > >How do these sound to you?
> > >
> > >Mary
> > >
> > >On Thu, 8 Sep 2005, Mr Liangliang Li wrote:
> > >
> > > > Dear Sir/Madam:
> > > >    How are you?
> > > >    I want to use 3% NaOH solution to strip the resist off from an 
> 8-inch
> > > > substrate, I hope I can get your permission. the following is the 
> detailed
> > > > process I want to do on the wet bench general:
> > > >
> > > >    1: I will get my own 3% NaOH solution and transfer it into the
> > > cleaning room
> > > > to the wet bench. I will mix NaOH powder with water or dilute 50% NaOH
> > > solution
> > > > outside of the cleanining room, to get 3% solution.
> > > >    2: I will get a large beaker (9 or 10 inch round size and 6-8 inch
> > > tall) and
> > > > bring it into the cleaning room.
> > > >    3: one 8-inch Printed circuit board substrate with a mask (made of
> > > negative
> > > > resist) on the top surface will be shipped from Intel. In our own 
> lab, my
> > > > magnetic material will be deposited to cover the whole substrate. And
> > > then, I
> > > > will bring the substrate to the wet bench.
> > > >    4: in the wet bench general, I will soak the 8-inch substrate into
> > > the 3%
> > > > NaOH solution inside the big beaker and heat to 45 degree C for 30
> > > mins. The
> > > > resist will be stripped off from the substate.
> > > >    5: After stripping, I will clean the wet bench and waste accordding
> > > to the
> > > > manual, the 8-inch substate will be taked out of the cleaning room
> > > immediately
> > > > and shipped back to Intel.
> > > >
> > > >    In our own lab, I have tested the stability of the substate in 
> 3% NaOH
> > > > solution at 45 C. It is really stable. The hot plate size is 8 inch by
> > > 8 inch
> > > > and the tank is 11-12 inch size. So we have enough space.
> > > >
> > > >    Dear Sir/Madam, if you think this process is ok in the wet bench
> > > general,
> > > > please let me know.
> > > >    Thank you very much
> > > >
> > > > best regards
> > > > liangliang li
> > > >
> >





From edmyers at stanford.edu  Mon Sep 12 13:32:44 2005
From: edmyers at stanford.edu (Ed Myers)
Date: Mon, 12 Sep 2005 13:32:44 -0700
Subject: SpecMat Logsheet, 9/13/05
Message-ID: <6.2.1.2.2.20050912133100.04481cd8@edmyers.pobox.stanford.edu>

All,

Attached is the SpecMat logsheet outlining all activities since the last 
meeting.

We only have a few items, so Tuesday's meeting should be fairly quick.

Ed
-------------- next part --------------
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From ForEducation at academic-software-outlet.com  Sun Sep 18 13:36:06 2005
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From bwchui at yahoo.com  Mon Sep 19 12:01:53 2005
From: bwchui at yahoo.com (Benjamin Chui)
Date: Mon, 19 Sep 2005 12:01:53 -0700 (PDT)
Subject: Aluminum nitride approval request
Message-ID: <20050919190153.19510.qmail@web40621.mail.yahoo.com>

Hello specmat team,

   I'd like to request approval to bring wafers with deposited aluminum
nitride (AlN) film into the SNF clean room.  I hope this is OK since
users are specifically using AlN in place of PZT for its CMOS
compatibility in building piezoelectric sensors.  The company
depositing the AlN also cites this advantage.

Thanks,

Ben Chui



From service at creditunion.coop  Mon Sep 19 21:12:58 2005
From: service at creditunion.coop (service at creditunion.coop)
Date: Mon, 19 Sep 2005 21:12:58 -0700
Subject: Notice
Message-ID: <E1EHZV4-0003zb-00@crichton.wstn.cortland.net>

An HTML attachment was scrubbed...
URL: <http://snf.stanford.edu/pipermail/specmat/attachments/20050919/1b1dc106/attachment.html>

From edmyers at stanford.edu  Tue Sep 20 09:42:32 2005
From: edmyers at stanford.edu (Ed Myers)
Date: Tue, 20 Sep 2005 09:42:32 -0700
Subject: Aluminum nitride approval request
In-Reply-To: <20050919230600.7230.qmail@web40629.mail.yahoo.com>
References: <20050919230600.7230.qmail@web40629.mail.yahoo.com>
Message-ID: <6.2.1.2.2.20050920093600.04f73ab0@edmyers.pobox.stanford.edu>

Ben,

In general the company saying they are CMOS clean is not sufficient.  There 
are facilities which SpecMat has approved as CMOS clean, and wafers from 
these companies can be processed in our clean equipment group.  If the 
wafers do not come from these companies, we can certify there level of 
contamination by TXRF and then they will be allowed in the clean equipment set.

We did have one large company come in with wafers they said were CMOS 
clean, but from an unknown vendor.  We requested TXRF data and found the 
wafers to be heavily Cu contaminated.  The company had two chambers for the 
deposition and only one of them showed the high levels.  Ultimately the 
deposition company was forced to do a major clean up on the chamber before 
they were allowed to process any more wafers.

SpecMat will need more information on the origin of the wafers or 
verification of their level of contamination before they will be approved 
for the clean equipment set.

Ed



At 04:06 PM 9/19/2005, you wrote:
>Ed,
>
>     I also got confirmation from the company doing the Mo-AlN
>deposition that the films are CMOS clean, without gold or other
>contamination.
>
>Ben
>
>
>--- Benjamin Chui <bwchui at yahoo.com> wrote:
>
> > Ed,
> >
> >      The film actually consists of a Mo-AlN-Mo (molybdenum and
> > aluminum
> > nitride) stack.  The tools that we expect to be using are:
> >
> > svgcoat
> > EValign/KarlSuss
> > svgdev
> >
> > drytek2
> > AMT
> > wbmetal
> > gasonics
> >
> > STSetch (any exposed metal will be fully encapsulated by photoresist,
> > a
> > method previously approved by Jim McVittie)
> >
> >      Please advise if any of these material-tool combinations are a
> > problem.
> >
> > Thanks!
> >
> > Ben
> >
> >
> > --- Ed Myers <edmyers at stanford.edu> wrote:
> >
> > > Ben,
> > >
> > > It's not the bringing them in to the fab, it's what tools they will
> > > be
> > > processed in and the level of cleanliness of the wafers.  You will
> > > need to
> > > provide a process flow (tools) that will see the wafers.
> > >
> > > Regards,
> > >
> > >
> > > At 12:01 PM 9/19/2005, you wrote:
> > > >Hello specmat team,
> > > >
> > > >    I'd like to request approval to bring wafers with deposited
> > > aluminum
> > > >nitride (AlN) film into the SNF clean room.  I hope this is OK
> > since
> > > >users are specifically using AlN in place of PZT for its CMOS
> > > >compatibility in building piezoelectric sensors.  The company
> > > >depositing the AlN also cites this advantage.
> > > >
> > > >Thanks,
> > > >
> > > >Ben Chui
> > >
> > >
> > >
> > >
> >
> >





From yzhu at ee.ucr.edu  Wed Sep 21 18:35:48 2005
From: yzhu at ee.ucr.edu (Yan Zhu)
Date: Wed, 21 Sep 2005 17:35:48 -0800
Subject: Co silicide
Message-ID: <20050922003550.C6BBD69F@post.ee.ucr.edu>

Hi,

I am a new member of the SNF. I will do some Cobalt silicide experiment, may I know if Cobalt silicide wafer can be loaded into the LTO furnace? And which machine is semi-clean, so I can deposit Cobalt before going to the LTO furnace?
  
Thanks
Yan Zhu
yzhu at ee.ucr.edu




From edmyers at stanford.edu  Tue Sep 27 10:48:40 2005
From: edmyers at stanford.edu (Ed Myers)
Date: Tue, 27 Sep 2005 10:48:40 -0700
Subject: SpecMat Log Sheet 9/27/05
Message-ID: <6.2.1.2.2.20050927103554.0425d4f0@edmyers.pobox.stanford.edu>

Members,

We have two new items for this week.  Lets try and do this by email instead 
of holding todays meeting.

Item 1)  I'd like to request approval to bring wafers with deposited 
aluminum nitride (AlN) film into the SNF clean room.  I hope this is OK 
since users are specifically using AlN in place of PZT for its CMOS 
compatibility in building piezoelectric sensors.  The film actually 
consists of a Mo-AlN-Mo (molybdenum and aluminum nitride) stack.  The tools 
that we expect to be using are: svgcoat, EValign/KarlSuss, svgdev, drytek2, 
AMT, wbmetal, gasonics and STSetch (any exposed metal will be fully 
encapsulated by photoresist, a method previously approved by Jim McVittie)

Comments: Since Ben wants to run down the clean equipment set.  This means 
he needs to prove the cleanliness of the deposition by TXRF.  I will send 
out an email on Friday, Oct. 7th detailing the need for TXRF, or 
verification the film comes from an approved supplier if I don't hear any 
concerns.


Item 2)  Our process requires Cl-etching of Al stopping on Mg.  Mg has 
shown that it does not etch in F-chemistry here and Cl-chemistry (Al,Ti, 
TiN, TaN etches) at ATDF.  ATDF ran contamination checks and were satisfied 
that Mg did not pose a contamination risk to their mainline metal 
etcher.  The chemistry I plan to use is BCl3 and Cl2 with a 40-80W RF 
power.  In light of the contamination study, I would like to resubmit our 
request for Mg in the pquest.

Comment:  Carl has provided VPD-ICP-MS data for the wafers.  The data meets 
our definition of Clean even though he wishes to run through the pQuest.  I 
will give Jim a copy of the data.  If I don't hear any reason we can't 
approve this request by Friday, Oct. 7th I will send out an approval email.

Item 3)  Is a carry over concerning cleaning pots for Ge.  I will set a 
meeting with Mary and Nancy to come up with a strategy and propose it to 
SpecMat by Friday Oct. 7th.

Regards,
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From mdeal at stanford.edu  Tue Sep 27 11:12:36 2005
From: mdeal at stanford.edu (Michael Deal)
Date: Tue, 27 Sep 2005 11:12:36 -0700
Subject: SpecMat Log Sheet 9/27/05
In-Reply-To: <6.2.1.2.2.20050927103554.0425d4f0@edmyers.pobox.stanford.e
 du>
References: <6.2.1.2.2.20050927103554.0425d4f0@edmyers.pobox.stanford.edu>
Message-ID: <6.1.1.1.2.20050927111206.01e6c9f0@mdeal.pobox.stanford.edu>


I have no problem with these conditions.    -mike

At 10:48 AM 9/27/2005, Ed Myers wrote:
>Members,
>
>We have two new items for this week.  Lets try and do this by email 
>instead of holding todays meeting.
>
>Item 1)  I'd like to request approval to bring wafers with deposited 
>aluminum nitride (AlN) film into the SNF clean room.  I hope this is OK 
>since users are specifically using AlN in place of PZT for its CMOS 
>compatibility in building piezoelectric sensors.  The film actually 
>consists of a Mo-AlN-Mo (molybdenum and aluminum nitride) stack.  The 
>tools that we expect to be using are: svgcoat, EValign/KarlSuss, svgdev, 
>drytek2, AMT, wbmetal, gasonics and STSetch (any exposed metal will be 
>fully encapsulated by photoresist, a method previously approved by Jim 
>McVittie)
>
>Comments: Since Ben wants to run down the clean equipment set.  This means 
>he needs to prove the cleanliness of the deposition by TXRF.  I will send 
>out an email on Friday, Oct. 7th detailing the need for TXRF, or 
>verification the film comes from an approved supplier if I don't hear any 
>concerns.
>
>
>Item 2)  Our process requires Cl-etching of Al stopping on Mg.  Mg has 
>shown that it does not etch in F-chemistry here and Cl-chemistry (Al,Ti, 
>TiN, TaN etches) at ATDF.  ATDF ran contamination checks and were 
>satisfied that Mg did not pose a contamination risk to their mainline 
>metal etcher.  The chemistry I plan to use is BCl3 and Cl2 with a 40-80W 
>RF power.  In light of the contamination study, I would like to resubmit 
>our request for Mg in the pquest.
>
>Comment:  Carl has provided VPD-ICP-MS data for the wafers.  The data 
>meets our definition of Clean even though he wishes to run through the 
>pQuest.  I will give Jim a copy of the data.  If I don't hear any reason 
>we can't approve this request by Friday, Oct. 7th I will send out an 
>approval email.
>
>Item 3)  Is a carry over concerning cleaning pots for Ge.  I will set a 
>meeting with Mary and Nancy to come up with a strategy and propose it to 
>SpecMat by Friday Oct. 7th.
>
>Regards,
>
>



From jun.f.zheng at intel.com  Fri Sep 30 10:47:21 2005
From: jun.f.zheng at intel.com (Zheng, Jun F)
Date: Fri, 30 Sep 2005 10:47:21 -0700
Subject: Request for allowing poly and annealing process of wafers with CMOS compatible Si3N4 from outside Stanford CIS
Message-ID: <88056F38E9E48644A0F562A38C64FB6005DECEE2@scsmsx403.amr.corp.intel.com>

Sept. 30, 2005

 

To: Member of Special Materials Committee

 

From: Jun-Fei Zheng

 

Sub: Processing of Poly deposition on wafers received Si3N4 film from
outside CIS

 

We are evaluating Jet Vapor Deposited (JVD) Si3N4 film at Yale
University for certain applications. The process is CMOS compatible in a
custom built machine and wafers of 8" and 12" has been cross processed
for CMOS application with several major semiconductor companies,
including Intel.  To illustared the details, the materials involved in
the process are quartz, Teflon, and CMOS quality gas sources. JVD Si3N4
was process by mixture of SiH4 and Nitrogen gas in remote plasma through
a quartz inner nozzle with He gas as carrying gas in an outer nozzle.
The process is conducted at room temperature, which future reduce risk
of high temperature diffusion induced contamination. We have tested the
film contamination level by VPD (vapor phase decomposition) and all the
metallic contents are below detecting limit or less than 10e^10/cm2, the
criteria that we take such wafers into diffusion and poly furnace at
Intel development line for further process without concerning the
contamination based on the contamination test results. We only processed
the wafer through SC1 and SC2 bath as precaution measure before inserted
into Intel line.



We are requesting to allow the same materials to be processed in CIS for
in-situ poly deposition and annealing furnace. We want to run this at
CIS because we need in-situ poly deposition capability. In order to fit
the 6" tube or 4" tube, the 8" wafer has been notch cut and cleaned into
half, with the short dimension of 4", so that can be inserted into 6" or
4" tube.

 

We sincerely hope our request can be granted. We also wanted to avoid
H2SO4:H2O2 process as our wafer has never been through Lithographic
process and this is what the H2SO4:H2O2 mainly for but H2SO4:H2O2
process might destroy the gate quality Si3N4. We also do not see the
need for 50:1 HF dip, which is used for clear oxide formed on Silicon
during H2SO4:H2O2 process. We believe SC1 and SC2 in combination would
be able to address potential contamination during wafer handling and
shipping.

 

If you have any suggestion and question, please reply to my e-mail or
contact me at (408)921-8763 (cell).

 

Sincerely,

 

Jun-Fei Zheng

Senior Staff Scientist

Intel Corporation

Strategic Technology Group

SC1-05

3065 Bower Ave

Santa Clara, CA 95052

 

 

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