Drytek training Required

Nancy Latta nlatta at stanford.edu
Tue Apr 4 13:34:50 PDT 2006


Hi Sarves,

The materials that you'd like to etch have not been approved for 
drytek2.  I have cc'd the Special Materials Committee on this message.

Also, do you know what gases you'll need in order to do the etch?

-Nancy

Sarves Verma wrote:

>Dear Nancy
>
>I tried several times to meet you but could not find you.
>
>I desire to etch TaN (using DRYTEK 2) which is the gate in the MOSCAP .Now
>these MOSCAPs have been made at Intel and are clean to a great degree.
>
>The MOS capacitor has Si at the bottom, followed by 1.5 nm of SiO2 at its
>top above which HfO2(hafnium oxide) has been deposited(using ALD). And
>finally above it is the gate which is TaN(Tantalum Nitride).
>
>I need to etch TaN only.
>
>After several discussions with Prof. Saraswat and Intel guys, it was decided
>to go for dry etch(as we could not locate any wet etchant for TaN). It was
>suggested to me to go for DRYTEK 2 as it is semi clean.
>
>Let me know if it is possible for me to etch TaN.
>
>Thanks
>
>Regards
>Sarves Verma
>
>
>
>
>
>
>Quoting Nancy Latta <nlatta at stanford.edu>:
>
>  
>
>>Hi Sarves,
>>
>>Which drytek would you like training on?  If you don't know please let
>>me know what material you'd like to etch, what the underlying material
>>you are etching down to is and what the cleanliness level of your
>>samples is.
>>
>>Thanks,
>>
>>-Nancy
>>
>>Sarves Verma wrote:
>>
>>    
>>
>>>Dear Nancy
>>>
>>>I am a graduate student in Prof. Saraswat group and I need Drytek
>>>      
>>>
>>training
>>    
>>
>>>as soon as possible. Let me know the nearest available date.
>>>
>>>Thanks
>>>
>>>Regards
>>>Sarves Verma
>>>Coral login:sarves
>>>
>>>
>>>
>>>      
>>>
>>
>>    
>>
>
>
>
>  
>





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