Fwd: Gallium Nitride

Ed Myers edmyers at stanford.edu
Wed Apr 5 16:04:35 PDT 2006

I was looking into the MSDS sheets for Gallium Nitirde.  There is not much 
information on health hazards.  The only troubling item is the material is 
water or humidity sensitive.  The released compound is ammonia.  I'm afraid 
we might get an ammonia smell in the fab when we open the chamber and when 
we regen the cryo.

Should we require a couple of partial vent-pumpdown cycles prior to lifting 
the chamber?  The next question regards our internal hardware.  Can we let 
them use ours or should we have them use the ZnCdS hardware?


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>From: "Jia Feng" <fengj at stanford.edu>
>To: <specmat at snf.stanford.edu>
>Cc: "FENGJ" <fengj at stanford.edu>
>Subject: Gallium Nitride
>Date: Wed, 22 Mar 2006 16:13:13 -0800
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>Special Material Committee:
>I am writing to you to get your approval to use Gallium Nitride in SNF. 
>The information you require is provided as follows.
>1. Your contact information: Name, Coral login, phone number, email 
>address and who you work for (your PI or company.)
>Name: Jia Feng
>Coral login: fengj
>Phone number: 650-725-4549
>Email address: fengj at stanford.edu
>PI: James D Plummer
>2. The chemical or material.
>Material: Gallium Nitride
>Please see the MSDS in the attachment
>3. Vendor/manufacturer info: address and phone number, website URL.
>Technologies and Devices International, Inc.
>12214 Plum Orchard Dr., Silver Spring, MD 20904 USA
>TEL: +1 301 572 7834; FAX: +1 301 572 6435;   www.tdii.com
>4. Reason for request
>We are planning to do RF sputtering of Gallium Nitride onto 4-inch Silicon 
>wafers and investigate its crystallization.
>5. Process Flow.
>(1) RF sputtering in metallica, thickness: ~ 0.1 um
>(2) Deposit 0.02-um SiO2 in sts PECVD
>(3) Optical lithography in nikon, using 3612 photoresist
>(4) Photoresist descum in drytek4
>(5) Dry etch in pquest
>(6) Photoresist removal in matrix
>(7) Clean in PRS-1000 (heated to 40 C) in wbgaas
>(8) Deposit 0.1-um SiO2 in sts PECVD
>(9) Heating to 800 C for 1 second in rtagaas
>(10) Cut the Silicon substrate using wafersaw. The GaN has already been 
>etch into 1-um wide and 10-um long stripes and covered with SiO2. With 
>visible marks etched on the wafer, the wafersaw blade will only cut into 
>the Silicon substrate without contacting or exposing any GaN.
>6.. Amount and form.
>The Gallium Nitride we will bring into the lab is 1-inch poly-crystalline 
>target for RF sputtering.
>7. Storage: Will you be storing your chemical/material at SNF? If so, 
>please note any potential reactivities (this should be on the MSDS).
>We will store the Gallium Nitride target in vacuum sealed bags.
>8. DIsposal
>The Gallium Nitride will either be dry etched or stay on the wafer.
>Jia Fe
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