Fwd: Etching of TaN
edmyers at stanford.edu
Wed Apr 5 17:30:29 PDT 2006
It's not my approval, it's specmat approval. SpecMat was forwarded the
request by Nancy Latta on 4/4, yesterday. SpecMat meets every other week
and our next scheduled meeting is Tuesday 4/11. Irrespective of where the
material came from, it falls in to the SemicleanB classification which says
no dry etching unless approved by specmat.
I've copied specmat, and will try to get a response before next weeks meeting.
At 05:15 PM 4/5/2006, Krishna Saraswat wrote:
>We received some wafers from Intel research consisting of TaN gate
>electrode/HfO2/SiO2. We need to etch TaN to make MOS capacitors. TaN
>is a Si compatible material generally used worldwide as gate
>electrode for MOSFETs and also as a barrier layer for Cu. We need to
>etch it using SF6 or CF4 chemistry. We need your permission.
>Begin forwarded message:
>>From: Sarves Verma <sarves at stanford.edu>
>>Date: April 5, 2006 5:08:53 PM PDT
>>To: saraswat at stanford.edu, jim.mcvittie at stanford.edu
>>Subject: Etching of TaN
>>Dear Prof. Saraswat and Jim,
>>I need your permission to etch TaN (used as the gate electrode in
>>capacitors provided by Intel).
>>These MOS caps as you know have Si on the bottom, followed by SiO2
>>Oxide), HfO2 (Hafnium Oxide) and TaN gate electrode deposited on
>>top of it
>>Kindly let me know what can be done.
>>1st yr. Ph.D candidate
>>Materials Sci. & Eng.
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