Fwd: Gallium Nitride

Jim McVittie mcvittie at snf.stanford.edu
Thu Apr 6 17:20:22 PDT 2006


Hi Mary,

I agree etching is different than deposition. I was just commenting that GaN is not new to the
lab.
    Jim

Mary Tang wrote:

> Hi Jim --
>
> But GaN is new to metalica, is that right?  And etching small amounts
> doesn't generally expose the user or the maintenance person to
> significant amounts of by-product, I would think.  The concern is that
> the ZnCdS incident in metalica left a discernable smell in the chamber
> and nearly caused (and probably warranted) an evacuation of the lab when
> the cryo was regened and one would think that the amounts and volatility
> of the potential by-products wouldn't have done this.  But the human
> nose can be extraordinarily sensitive.
>
> I would vote for a conservative approach.  At the very least, the first
> couple of times that this is done, we should reserve extra time on the
> system to check everything out.
>
> Mary
>
> Jim McVittie wrote:
>
> >Ed,
> >
> >GaN is not new to SNF. Our III-V users have been bring it into our lab for maybe 10 yrs.
> >It has been etched in both Drytek4 and the PQ.   Jim
> >
> >Ed Myers wrote:
> >
> >
> >
> >>I was looking into the MSDS sheets for Gallium Nitirde.  There is not much
> >>information on health hazards.  The only troubling item is the material is
> >>water or humidity sensitive.  The released compound is ammonia.  I'm afraid
> >>we might get an ammonia smell in the fab when we open the chamber and when
> >>we regen the cryo.
> >>
> >>Should we require a couple of partial vent-pumpdown cycles prior to lifting
> >>the chamber?  The next question regards our internal hardware.  Can we let
> >>them use ours or should we have them use the ZnCdS hardware?
> >>
> >>Ed
> >>
> >>
> >>
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> >>>From: "Jia Feng" <fengj at stanford.edu>
> >>>To: <specmat at snf.stanford.edu>
> >>>Cc: "FENGJ" <fengj at stanford.edu>
> >>>Subject: Gallium Nitride
> >>>Date: Wed, 22 Mar 2006 16:13:13 -0800
> >>>X-Mailer: Microsoft Outlook Express 6.00.2800.1506
> >>>
> >>>Special Material Committee:
> >>>
> >>>I am writing to you to get your approval to use Gallium Nitride in SNF.
> >>>The information you require is provided as follows.
> >>>
> >>>1. Your contact information: Name, Coral login, phone number, email
> >>>address and who you work for (your PI or company.)
> >>>
> >>>Name: Jia Feng
> >>>Coral login: fengj
> >>>Phone number: 650-725-4549
> >>>Email address: fengj at stanford.edu
> >>>PI: James D Plummer
> >>>
> >>>2. The chemical or material.
> >>>
> >>>Material: Gallium Nitride
> >>>Please see the MSDS in the attachment
> >>>
> >>>3. Vendor/manufacturer info: address and phone number, website URL.
> >>>
> >>>Technologies and Devices International, Inc.
> >>>12214 Plum Orchard Dr., Silver Spring, MD 20904 USA
> >>>TEL: +1 301 572 7834; FAX: +1 301 572 6435;   www.tdii.com
> >>>
> >>>4. Reason for request
> >>>
> >>>We are planning to do RF sputtering of Gallium Nitride onto 4-inch Silicon
> >>>wafers and investigate its crystallization.
> >>>
> >>>5. Process Flow.
> >>>
> >>>(1) RF sputtering in metallica, thickness: ~ 0.1 um
> >>>(2) Deposit 0.02-um SiO2 in sts PECVD
> >>>(3) Optical lithography in nikon, using 3612 photoresist
> >>>(4) Photoresist descum in drytek4
> >>>(5) Dry etch in pquest
> >>>(6) Photoresist removal in matrix
> >>>(7) Clean in PRS-1000 (heated to 40 C) in wbgaas
> >>>(8) Deposit 0.1-um SiO2 in sts PECVD
> >>>(9) Heating to 800 C for 1 second in rtagaas
> >>>(10) Cut the Silicon substrate using wafersaw. The GaN has already been
> >>>etch into 1-um wide and 10-um long stripes and covered with SiO2. With
> >>>visible marks etched on the wafer, the wafersaw blade will only cut into
> >>>the Silicon substrate without contacting or exposing any GaN.
> >>>
> >>>6.. Amount and form.
> >>>
> >>>The Gallium Nitride we will bring into the lab is 1-inch poly-crystalline
> >>>target for RF sputtering.
> >>>
> >>>7. Storage: Will you be storing your chemical/material at SNF? If so,
> >>>please note any potential reactivities (this should be on the MSDS).
> >>>
> >>>We will store the Gallium Nitride target in vacuum sealed bags.
> >>>
> >>>8. DIsposal
> >>>
> >>>The Gallium Nitride will either be dry etched or stay on the wafer.
> >>>
> >>>Thanks,
> >>>Jia Fe
> >>>
> >>>
> >>  ------------------------------------------------------------------------
> >>                                                  Name: CCOHS MSDS Record Number 4173028.pdf
> >>   CCOHS MSDS Record Number 4173028.pdf           Type: Acrobat (application/pdf)
> >>                                              Encoding: base64
> >>                                       Download Status: Not downloaded with message
> >>
> >>                                                  Name: CCOHS MSDS Record Number 4168791.pdf
> >>   CCOHS MSDS Record Number 4168791.pdf           Type: Acrobat (application/pdf)
> >>                                              Encoding: base64
> >>                                       Download Status: Not downloaded with message
> >>
> >>   Part 1.4           Type: Plain Text (text/plain)
> >>           Download Status: Not downloaded with message
> >>
> >>
> >
> >
> >
>
> --
> Mary X. Tang, Ph.D.
> Stanford Nanofabrication Facility
> CIS Room 136, Mail Code 4070
> Stanford, CA  94305
> (650)723-9980
> mtang at stanford.edu
> http://snf.stanford.edu




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