From larry at relgyro.Stanford.EDU Wed Feb 1 10:14:48 2006 From: larry at relgyro.Stanford.EDU (Larry Novak) Date: Wed, 01 Feb 2006 10:14:48 -0800 Subject: Drytek4 - One-inch process Message-ID: <6.2.5.6.2.20060201100907.01ecc118@relgyro.Stanford.EDU> An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Drytek4mod.doc Type: application/msword Size: 21504 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: DryTek4ModSketches1.doc Type: application/msword Size: 45056 bytes Desc: not available URL: From cearhart at gmail.com Wed Feb 1 14:40:18 2006 From: cearhart at gmail.com (Chris Earhart) Date: Wed, 1 Feb 2006 14:40:18 -0800 Subject: SpecMat Proposal: Polystyrene Nanoparticles Message-ID: <131c1bff0602011440x537af190ia20764ae2500d577@mail.gmail.com> Dear SpecMat Committee, I was curious if you had reviewed my application for the use of polystyrene nanoparticles at SNF. Please let me know when you have any updates regarding my proposal, or if you have any questions that I can address. Thanks, Chris -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Thu Feb 2 07:20:36 2006 From: mtang at stanford.edu (Mary Tang) Date: Thu, 02 Feb 2006 07:20:36 -0800 Subject: SpecMat Proposal: Polystyrene Nanoparticles In-Reply-To: <131c1bff0602011440x537af190ia20764ae2500d577@mail.gmail.com> References: <131c1bff0602011440x537af190ia20764ae2500d577@mail.gmail.com> Message-ID: <43E22344.30000@stanford.edu> Oops, sorry Chris, I was supposed to get back to you with process flow details. Your process has been approved, but I need to write up specifics on what to do at certain stations... I'll do this later today. Thanks, Mary Chris Earhart wrote: > Dear SpecMat Committee, > > I was curious if you had reviewed my application for the use of > polystyrene nanoparticles at SNF. Please let me know when you have > any updates regarding my proposal, or if you have any questions that I > can address. > > Thanks, > > Chris -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From sroonter at stanford.edu Thu Feb 2 16:23:25 2006 From: sroonter at stanford.edu (Saeroonter Oh) Date: Thu, 2 Feb 2006 16:23:25 -0800 Subject: [Phosphorosilicafilm 5e20] In-Reply-To: <1138663643.43dea0dbd7033@webmail.stanford.edu> References: <1138663643.43dea0dbd7033@webmail.stanford.edu> Message-ID: <1138926205.43e2a27d9dd3a@webmail.stanford.edu> Hello, 1. Contact Info Name: Saeroonter Oh coral: sroonter Phone: 650-353-1266 Email: sroonter at stanford.edu PI: Prof. Philip Wong 2. Chemical Name: Phosphorosilicafilm 5x10(20) Manufactured by EMULSITONE CAS Number: 141-78-6 MSDS: ------SECTION I - HAZARDOUS INGREDIENTS ------ NAME CAS# NATURE OF HAZARD ETHYL ACETATE 141-78-6 FLAMMABLE ETHYL ALCOHOL 64-17-5 FLAMMABLE METHYL ALCOHOL 67-56-1 FLAMMABLE PHOSPHORUS PENTOXIDE 1314-56-3 IRRITANT ------SECTION II - PHYSICAL DATA ------ BOILING POINT: 176 DEG. F SPECIFIC GRAVITY: 0.88 VAPOR PRESSURE: 50.4 MMHg (20 DEG. C) PERCENT VOLATILE BY VOLUME: 80% VAPOR DENSITY (AIR = 1): 1.66 SOLUBILITY IN WATER: SOLUBLE APPEARANCE AND ODOR: CLEAR SOLUTION, ALCOHOL-VINEGAR ODOR ------SECTION III - HEALTH HAZARD DATA ------ THRESHOLD LIMIT VALUES: ETHYL ACETATE: OSHA STD - AIR: TWA 400 PPM (SKIN) ETHYL ALCOHOL: OSHA STD - AIR: TWA 1000 PPM (SKIN) METHYL ALCOHOL: OSHA STD - AIR: TWA 200 PPM EFFECTS OF OVEREXPOSURE: INHALATION: EXPOSURE TO MORE THAN ABOVE LISTED THRESHOLD LIMIT MAY CAUSE HEADACHE, DROWSINESS AND LASSITUDE, LOSS OF APPETITE, THROAT IRRITATION AND INABILITY TO CONCENTRATE. INGESTION: CAN CAUSE DEPRESSION OF CENTRAL NERVOUS SYSTEM. NAUSEA, VOMITING, DIARRHEA. SEE EMERGENCY FIRST AID PROCEDURES BELOW FOR FURTHER INFORMATION. EYE CONTACT: LIQUID OR VAPOR MAY CAUSE IRRITATION. SKIN CONTACT: MAY CAUSE IRRITATION AND DEFATTING OF SKIN ON PROLONGED CONTACT. OTHER: INDIVIDUAL RESPONSE TO METHYL ALCOHOL VARY. INGESTION OF LESS THAN 30 ML HAS BEEN FATAL TO HUMANS. IN GENERAL, A FEW OUNCES MAY CAUSE BLINDNESS OR DEATH. AS LITTLE A 4 ML MAY BE TOXIC IF INGESTED. EMERGENCY FIRST AID PROCEDURES: FOR OVEREXPOSURE BY: SWALLOWING: THIS PRODUCT CONTAINS METHYL ALCOHOL. IF VICTIM IF CONSCIOUS AND ABLE TO SWALLOW, HAVE VICTIM DRINK WATER OR MILK TO DILUTE. NEVER GIVE ANYTHING BY MOUTH IF VICTIM IS UNCONSCIOUS OR HAVING CONVULSIONS. CALL A PHYSICIAN OR POISON CONTROL CENTER IMMEDIATELY. INDUCE VOMITING ONLY IF ADVISED BY PHYSICIAN OR POISON CONTROL CENTER. INHALATION: IMMEDIATELY REMOVE VICTIM TO FRESH AIR. IF VICTIM HAS STOPPED BREATHING, GIVE ARTIFICIAL RESPIRATION, PREFERABLY MOUTH-TO-MOUTH. GET MEDICAL ATTENTION IMMEDIATELY. CONTACT WITH EYES OR SKIN: IMMEDIATELY FLUSH AFFECTED AT LEAST 15 MINUTES. REMOVE AND CLEAN OR DISPOSE OF CONTAMINATED CLOTHING IN ACCORDANCE WITH APPROPRIATE FEDERAL, STATE AND LOCAL REGULATIONS. GET MEDICAL ATTENTION IMMEDIATELY. ------SECTION IV - FIRE AND EXPLOSION HAZARD DATA ------ FLASH POINT: 131 DEG. F (OPEN CUP) FLAMMABLE LIMITS: LEL: 2.2% UEL: 10.7% EXTINGUISHING MEDIA: DRY CHEMICAL, CARBON DIOXIDE, OR ALCOHOL "FOAM". WATER MAY BE INEFFECTIVE, BUT SHOULD BE USED TO KEEP FIRE-EXPOSED CONTAINERS AND SURFACES COOL. IF A LEAK OR SPILL HAS NOT IGNITED, USE WATER SPRAY TO DISPERSE VAPORS AND TO PROTECT MEN ATTEMPTING TO STOP LEAK. WATER SPRAY MAY BE USED TO FLUSH SPILLS AWAY FROM EXPOSURE AND TO DILUTE SPILLS TO NON-FLAMMABLE MIXTURES (NFPA-49 1975). SPECIAL FIREFIGHTING PROCEDURES: FIREFIGHTERS SHOULD WEAR SELF-CONTAINED BREATHING APPARATUS IN THE POSITIVE MODE WITH FULL FACEPIECE WHEN THERE IS A POSSIBILITY OF EXPOSURE TO SMOKE, FUMES OR HAZARDOUS DECOMPOSITION PRODUCTS. ------SECTION V - REACTIVITY DATA ------ STABILITY: STABLE INCOMPATIBILITY: STRONG OXIDIZERS HAZARDOUS DECOMPOSITION PRODUCTS: AS WITH ALL ORGANIC SOLVENTS, COMBUSTION WILL PRODUCE CARBON DIOXIDE, CARBON MONOXIDE AND WATER. HAZARDOUS POLYMERIZATION: WILL NOT OCCUR. ------SECTION VI - SPILL OR LEAK PROCEDURES ------ IF A LEAK OR SPILL OCCURS: WEAR APPROPRIATE PROTECTIVE CLOTHING AS DESCRIBED IN SECTION VII BELOW. ELIMINATE ALL IGNITION SOURCES. SMALL SPILLS (UP TO ONE GALLON) MAY BE COLLECTED WITH ABSORBENT MATERIAL. FOR LARGER UNCONTROLLED RELEASES, FLUSH SPILL AREA WITH WATER SPRAY. PREVENT RUNOFF FROM ENTERING DRAINS, SEWERS AND STREAMS. USE WATER SPRAY TO DISPERSE VAPORS. DISCARD CONTAMINATED CLOTHING ONLY IN ACCORDANCE WITH FEDERAL, STATE AND LOCAL REGULATIONS. WASTE DISPOSAL METHOD: OBSERVE ALL FEDERAL, STATE AND LOCAL LAWS REGARDING HAZARDOUS WASTE REMOVAL AND RECYCLING. ------SECTION VII - SPECIAL PROTECTION INFORMATION ------ RESPIRATORY PROTECTION: USE APPROPRIATE NIOSH-APPROVED RESPIRATOR FOR ORGANIC VAPOR IF EXPOSURE IS LIKELY TO EXCEED ACCEPTABLE LIMITS. VENTILATION: GENERAL: AT LEAST 10 AIR CHANGES PER HOUR FOR GOOD GENERAL ROOM VENTILATION. LOCAL EXHAUST: IF NEEDED TO CONTROL VAPOR. SKIN AND EYE PROTECTION: SAFETY GLASSES SHOULD BE WORN IF THERE IS ANY DANGER OF SPLASHING. PERSONS WITH SENSITIVE SKIN SHOULD WEAR GLOVES AND PROTECTIVE CLOTHING. ------SECTION VIII - SPECIAL PRECAUTIONS ------ HANDLING AND STORAGE: STORE THIS SOLUTION IN A COOL, DRY PLACE. AS WITH ANY CHEMICAL, USE REASONABLE CARE IN STORAGE, APPLICATION AND DISPOSAL. ------SECTION IX - SHIPPING REGULATIONS ------ PROPER SHIPPING NAME: ETHANOL SOLUTION, UN1170 IATA REGULATIONS: LABELS: FLAMMABLE LIQUID QUANTITY LIMITS PKG. INST. PKG. GROUP PASSENGER AIRCRAFT: 309 III 60 LITERS/PACKAGE CARGO AIRCRAFT: 310 III 220 LITERS/PACKAGE DOT REGULATIONS: ETHANOL SOLUTION, UN 1170 LABELS: FLAMMABLE LIQUID 3. Vendor: EMULSITONE COMPANY Address: 19 Leslie Court Whippany, New Jersey 07981 TEL. (973)386-0053 FAX (973)503-0256 http://emulsitone.com/ 4. Reason for request Attatched file: 2003 paper on "Proximity Rapid Thermal Diffusion" (Alan Seabaugh group) Need abrupt shallow junctions in Si, Ge, GaAs. 5. Process flow There's a source wafer and a target wafer. The Emulsitone phosphorosilicafilm is spin coated on a cleaned source wafer. Then bake. Three cleaned spacers(wafer strips) are placed on top of source wafer and target wafer is placed on top of the spacers facing down. Then RTA. Then cleaned in buffered HF. Eventually going to make silicon pn diodes. I'm measuring the btbt leakage in pn junctions for various materials(Si, Ge..) - Equipment used? Karlsuss RTA Drytek wetbenches before/after doping I don't know where to spin this on? Can I use Headway? 6. Amount and form 4 oz liquid form 7. Storage One of the flammable cabinets after labeling. HANDLING AND STORAGE: STORE THIS SOLUTION IN A COOL, DRY PLACE. AS WITH ANY CHEMICAL, USE REASONABLE CARE IN STORAGE, APPLICATION AND DISPOSAL. 8. Disposal IF A LEAK OR SPILL OCCURS: WEAR APPROPRIATE PROTECTIVE CLOTHING AS DESCRIBED IN SECTION VII BELOW. ELIMINATE ALL IGNITION SOURCES. SMALL SPILLS (UP TO ONE GALLON) MAY BE COLLECTED WITH ABSORBENT MATERIAL. FOR LARGER UNCONTROLLED RELEASES, FLUSH SPILL AREA WITH WATER SPRAY. PREVENT RUNOFF FROM ENTERING DRAINS, SEWERS AND STREAMS. USE WATER SPRAY TO DISPERSE VAPORS. DISCARD CONTAMINATED CLOTHING ONLY IN ACCORDANCE WITH FEDERAL, STATE AND LOCAL REGULATIONS. WASTE DISPOSAL METHOD: OBSERVE ALL FEDERAL, STATE AND LOCAL LAWS REGARDING HAZARDOUS WASTE REMOVAL AND RECYCLING. Thank you, Saeroonter From update at amazon.com Fri Feb 3 03:00:40 2006 From: update at amazon.com (update at amazon.com) Date: Fri, 3 Feb 2006 14:00:40 +0300 (MSK) Subject: Please update your Amazon account ! Message-ID: <200602031100.k13B0eh8025271@pm4hdd.bdbd.ru> An HTML attachment was scrubbed... URL: From robert.candler at rtc.bosch.com Fri Feb 3 13:43:44 2006 From: robert.candler at rtc.bosch.com (Rob Candler (RTC)) Date: Fri, 3 Feb 2006 13:43:44 -0800 Subject: new material request - silicon carbide Message-ID: Hello, I am interested in processing a wafer with a thin (< 100 nm) silicon carbide film in 'clean' equipment groups in SNF. The film will be deposited at the Berkeley Sensor and Actuator Center. I understand that chemical analyses need to be performed to assess any level of contamination during the process. To get things going I am arranging for a VPD-ICP-MS test to be performed, and I have a few questions: 1) What is the general process for getting wafers with thin-film coatings into the lab? Is there a general 'clean' certification that can be attained, or is it more machine specific? 2) Is there a preferred vendor for the contamination test? 3) What are the threshold levels for contamination for each of the elements of interest? 4) My current vendor offers two tests which give concentrations of different sets of elements? Test 1: analyzes concentration of Al, Ca, Cr, Cu, Fe, K, Na, Ni, Mg, and Zn Test 2: analyzes ocncentration of Ca, K, Na, Al, Fe, Cr, Cu, Ni, Zn, Li, Be, Mg, V, Mn, Co, Ga, Sr, Zr, Mo, Cd, Sn, Sb, Ba, Ti, Rb, In Ce, Th, Y, and U. Is test 1 sufficient, or is test 2 preferred? Thanks! Rob Rob Candler Robert Bosch Research and Technology Center 4009 Miranda Ave. Palo Alto, CA 94304 Fax: (650)320-2999 Phone: (650)320-2992 From mtang at stanford.edu Mon Feb 6 11:06:54 2006 From: mtang at stanford.edu (Mary Tang) Date: Mon, 06 Feb 2006 11:06:54 -0800 Subject: SpecMat Proposal: Polystyrene Nanoparticles In-Reply-To: <131c1bff0602011440x537af190ia20764ae2500d577@mail.gmail.com> References: <131c1bff0602011440x537af190ia20764ae2500d577@mail.gmail.com> Message-ID: <43E79E4E.4030402@stanford.edu> Hi Chris -- Sorry for the delay. Your Specmat request was approved, with a few caveats. Please let us know if there are concerns on your part for any of these. From our notes, we have the following: 1. SiO2 deposition on silicon wafers. 2. Spincoating of polystyrene microspheres, to be performed at Prof. Wang's lab. 3. RIE using drytek2, using CF4/O2 in 2:1 ratio. *SpecMat requests that you perform a 15 minute O2 plasma clean following your process, to remove any polystyrene spheres that may have come off the wafers. *4. Etching on the AMTEtch through SiO2. *SpecMat requests that you perform the 5 minute NF3 cleanup in the recipe 2 after processing your wafers (this is part of the standard procedure for this recipe.)* 5. Remove polystyrene microspheres using dichloromethane. *SpecMat requests that if this is to be done at wbsolvent at SNF, that an alternative to dichloromethane be considered, as this is a known carcinogen. If this is to be done in Prof. Wang's lab, then please use glassware that has not been exposed to metals (as in liftoff.)* 6/7. Wafer decontamination at SNF. *SpecMat requests that you use the 5:1:1 Water:HCl:H2O2 cleaup used for decontaminating wafers exposed to KOH etching. This is available online at: http://snf/Equipment/wbgeneral/KOHEtch.html#Decontamination Following these procedures, "lampoly" can be used. (Please note that normally before going into a "clean" furnace process, a piranha clean at wbnonmetal and pre-diff clean at wbdiff are required. However, since lampoly runs at a low process temperature, the KOH decontamation [in appropriate labware, if done at wbgeneral] properly done, should be sufficient in controlling contamination. If you wish to change your process from lampoly in the future, please submit a SpecMat request so that we can check for the appropriate cleans.)* Thanks for your patience! Mary Chris Earhart wrote: > Dear SpecMat Committee, > > I was curious if you had reviewed my application for the use of > polystyrene nanoparticles at SNF. Please let me know when you have > any updates regarding my proposal, or if you have any questions that I > can address. > > Thanks, > > Chris -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mcvittie at snf.stanford.edu Mon Feb 6 14:51:54 2006 From: mcvittie at snf.stanford.edu (Jim McVittie) Date: Mon, 06 Feb 2006 14:51:54 -0800 Subject: Drytek4 - One-inch process References: <6.2.5.6.2.20060201100907.01ecc118@relgyro.Stanford.EDU> Message-ID: <43E7D309.B572C5F6@snf.stanford.edu> Hi Larry, Assuming all your measurements are correct, your drawings for the Drytek4 modifdication look OK to me. If you want to meet and go over your drawings, it is fine with me. Give me a time. Jim Larry Novak wrote: > Hi, > > We would like to get together at the next SpecMat meeting to review > the attached materials. > > Thank you, > > Larry Novak Jr. > Varian Physics > 382 Via Pueblo Mall > Stanford University > Stanford, CA 94305-4060 > phone (650) 724-1357 > fax(650) 725-8311 > E-mail: lnovak at stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From colby.bellew at sri.com Wed Feb 8 10:20:25 2006 From: colby.bellew at sri.com (Colby Bellew) Date: Wed, 08 Feb 2006 10:20:25 -0800 Subject: Request for Molybdenum etch in pquest Message-ID: <43EA3669.4000905@sri.com> I have some samples that have sputtered molybdenum on oxide. I would like to try etching the molybdenum in the pquest with chlorine etch chemistries. Colby -- ********************************* Colby Bellew, PhD Research Engineer - MEMS SRI International Menlo Park, CA 94025 650-859-2647 (Phone) 650-859-3090 (fax) ********************************* From mcvittie at snf.stanford.edu Wed Feb 8 11:56:38 2006 From: mcvittie at snf.stanford.edu (Jim McVittie) Date: Wed, 08 Feb 2006 11:56:38 -0800 Subject: Request for Molybdenum etch in pquest References: <43EA3669.4000905@sri.com> Message-ID: <43EA4CF5.100A05F@snf.stanford.edu> Colby, Why can't you etch your moly in Drytek4 with a F based chemistry? Jim Colby Bellew wrote: > I have some samples that have sputtered molybdenum on oxide. I would > like to try etching the molybdenum in the pquest with chlorine etch > chemistries. > > Colby > > -- > ********************************* > Colby Bellew, PhD > Research Engineer - MEMS > SRI International > Menlo Park, CA 94025 > 650-859-2647 (Phone) > 650-859-3090 (fax) > ********************************* From luscious at stanford.edu Thu Feb 9 10:22:18 2006 From: luscious at stanford.edu (Seoung-Jai Bai) Date: Thu, 9 Feb 2006 10:22:18 -0800 Subject: A question about using graphite carbon in Metalica or Innotec Message-ID: <200602091822.k19IMJ34024991@smtp3.Stanford.EDU> To whom it may concern, This is Seoung-Jai Bai (Coral : seoung), a graduate student in Prof. Prinz group in Mechanical engineering. For my research, I want to deposit carbon on top of silicon nitride layer using either Metalica or Innotec and found that carbon is not allowd to be used in those two equipments. Jeannie Perez told me to consult this issue with Specmat. So please read the attached documents and contact me if you have any question. Thank you!! sj -------------- next part -------------- A non-text attachment was scrubbed... Name: carbon sputtering.pdf Type: application/pdf Size: 234643 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Request for Bringing in New materials .doc Type: application/msword Size: 32256 bytes Desc: not available URL: From colby.bellew at sri.com Thu Feb 9 10:25:21 2006 From: colby.bellew at sri.com (Colby Bellew) Date: Thu, 09 Feb 2006 10:25:21 -0800 Subject: Request for Molybdenum etch in pquest Message-ID: <43EB8911.2060108@sri.com> Jim, I have tried that and have not had favorable results. I have etched the moly with SF6 and the problem is the residual moly disulfide that is left on the sidewalls. I have tried CF4 and C2F6 and the etch is preferential along grain boundaries which leaves very rough sidewalls. Colby Jim McVittie wrote: >Colby, > >Why can't you etch your moly in Drytek4 with a F based chemistry? Jim > >Colby Bellew wrote: > > > >>I have some samples that have sputtered molybdenum on oxide. I would >>like to try etching the molybdenum in the pquest with chlorine etch >>chemistries. >> >>Colby >> >>-- >>********************************* >>Colby Bellew, PhD >>Research Engineer - MEMS >>SRI International >>Menlo Park, CA 94025 >>650-859-2647 (Phone) >>650-859-3090 (fax) >>********************************* >> >> > > > -------------- next part -------------- An HTML attachment was scrubbed... URL: From mcvittie at snf.stanford.edu Thu Feb 9 13:10:46 2006 From: mcvittie at snf.stanford.edu (Jim McVittie) Date: Thu, 09 Feb 2006 13:10:46 -0800 Subject: Request for Molybdenum etch in pquest References: <43EB8911.2060108@sri.com> Message-ID: <43EBAFD6.BBCDCA38@snf.stanford.edu> Colby, In looking through the literature, I am finding most Mo etching is done with F based chemistries. As I told you before, the moly chlorides are not very volatile compared to the Fluorides. The Hess papers shows that you need to heat the wafer to at least 100 C to get etching. ( Molybdenum etching with chlorine atoms and molecular chlorine plasmas D. S. Fischl and D. W. Hess JVST 1988 -- Volume 6, Issue 5, pp. 1577-1580) I think you might be better off revisiting F based etch but trying CF4 with CHClF2 (F-22) or C2HClF4 (F-124). NF3 would be nice to try but it is not plumbed to the P5000 metal chamber. Jim Colby Bellew wrote: > Part 1.1 Type: Plain Text (text/plain) > Encoding: 7BIT From aeonia at stanford.edu Fri Feb 10 00:53:38 2006 From: aeonia at stanford.edu (Hyeun-Su Kim) Date: Fri, 10 Feb 2006 00:53:38 -0800 Subject: polyimide Message-ID: <001301c62e1f$7c828430$ed3140ab@interposer> Hi, I am trying to bring photodefinable polyimide into the lab. The product name is HD-4010 and it has its developer (PA400D) and rinse (PA400R). The process is as the followings. 1. The polyimide will be spin coated on a pyrex (and silicon too) substrate (which has 20um tall posts) at headway and soft-baked at hot plate next to headway. (30um uncured film) 2. It will be exposed at evaligner and developed/rinsed at headway. 3. After the developing, it will be cured at the blueM oven. (15um cured film) 4. 1um aluminum will be sputtered on top of polyimide. 5. PR for the patterning Al will be coated and patterned 6. Aluminum will be wet etched at wbgeneral 7. matrix to remove the polyimide 8. dicing at the wafersaw. Please let me know if there needs more information. Thank you. Hyeun-su (aeonia) -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: HD4010 MSDS.pdf Type: application/pdf Size: 56281 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: PA400D MSDS.pdf Type: application/pdf Size: 79057 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: PA400R MSDS.pdf Type: application/pdf Size: 60137 bytes Desc: not available URL: From colby.bellew at sri.com Fri Feb 10 10:22:31 2006 From: colby.bellew at sri.com (Colby Bellew) Date: Fri, 10 Feb 2006 10:22:31 -0800 Subject: Request for Molybdenum etch in pquest In-Reply-To: <43EBAFD6.BBCDCA38@snf.stanford.edu> References: <43EB8911.2060108@sri.com> <43EBAFD6.BBCDCA38@snf.stanford.edu> Message-ID: <43ECD9E7.7030000@sri.com> Jim, I am certainly willing to try more combinations with fluorine but until we find something that works, I would like to investigate all possible alternatives. Do you have any specific issues with trying the chlorine etch in the pquest? Colby Jim McVittie wrote: >Colby, > >In looking through the literature, I am finding most Mo etching is done >with F based chemistries. >As I told you before, the moly chlorides are not very volatile compared >to the Fluorides. The Hess papers shows that you need to heat the wafer >to at least 100 C to get etching. ( >Molybdenum etching with chlorine atoms and molecular chlorine plasmas >D. S. Fischl and D. W. Hess JVST 1988 -- Volume 6, Issue 5, pp. >1577-1580) >I think you might be better off revisiting F based etch but trying CF4 >with CHClF2 (F-22) or C2HClF4 (F-124). NF3 would be nice to try but it >is not plumbed to the P5000 metal chamber. > > Jim > >Colby Bellew wrote: > > > >> Part 1.1 Type: Plain Text (text/plain) >> Encoding: 7BIT >> >> > > > -- ********************************* Colby Bellew, PhD Research Engineer - MEMS SRI International Menlo Park, CA 94025 650-859-2647 (Phone) 650-859-3090 (fax) ********************************* -------------- next part -------------- An HTML attachment was scrubbed... URL: From kevhuang at stanford.edu Sat Feb 11 15:13:00 2006 From: kevhuang at stanford.edu (Huang Kevin) Date: Sat, 11 Feb 2006 15:13:00 -0800 Subject: use of Germanium in STSetch and P5000etch Message-ID: <93586f8c0602111513ycd34999p411a0607eb0c3757@mail.gmail.com> Hi, Is germanium or silicon germanium allowed in stsetch and p5000etch? Also, is there any machine in SNF that can do the equivalent of DRIE of silicon germanium to an aspect ratio of 20? Thanks. Kevin -- ================================== Kevin Huang Ph.D. Student, Peumans Group Stanford Organic Electronics Lab Dept. of Electrical Engineering Email: kevhuang at stanford.edu Phone: (650) 725-6924 ================================== -------------- next part -------------- An HTML attachment was scrubbed... URL: From edmyers at stanford.edu Mon Feb 13 15:01:50 2006 From: edmyers at stanford.edu (Ed Myers) Date: Mon, 13 Feb 2006 15:01:50 -0800 Subject: SpecMat Logsheet2-14-06 Message-ID: <6.0.1.1.2.20060213145943.02a5aeb0@edmyers.pobox.stanford.edu> All, Tomorrow's specmat meeting will be held in room 210, beginning at 1:30. Could each of you look over the logsheet and see if I've missed any request. I think I have everything through January, but I might have missed some from early February. Ed -------------- next part -------------- A non-text attachment was scrubbed... Name: SpecMat Logsheet.xls Type: application/octet-stream Size: 140288 bytes Desc: not available URL: From sroonter at stanford.edu Mon Feb 13 18:38:37 2006 From: sroonter at stanford.edu (Saeroonter Oh) Date: Mon, 13 Feb 2006 18:38:37 -0800 Subject: [Q] approval? Message-ID: <1139884717.43f142ad0542e@webmail.stanford.edu> Hello, I've submitted information on Phosphorosilicafilm with the MSDS data about two weeks ago. May I know how much more time it takes to process the approval? Thank you, Saeroonter From edmyers at stanford.edu Tue Feb 14 07:41:00 2006 From: edmyers at stanford.edu (Ed Myers) Date: Tue, 14 Feb 2006 07:41:00 -0800 Subject: Fwd: [Q] approval? Message-ID: <6.0.1.1.2.20060214073932.02a3e430@edmyers.pobox.stanford.edu> All, My notes from the last meeting had us waiting for more information. This might have been an email I lost. Does anyone have a follow-up email from Saeroonter which provides the process information? Ed >X-Sieve: CMU Sieve 2.2 >Delivered-To: emyers at snf.stanford.edu >Mailing-List: contact specmat-help at snf.stanford.edu; run by ezmlm >X-No-Archive: yes >List-Post: >List-Help: >List-Unsubscribe: >List-Subscribe: >Delivered-To: mailing list specmat at snf.stanford.edu >Date: Mon, 13 Feb 2006 18:38:37 -0800 >From: Saeroonter Oh >To: "specmat at snf.stanford.edu" >Subject: [Q] approval? >User-Agent: Internet Messaging Program (IMP) 3.2.7 >X-Authenticated-User: sroonter >X-Originating-IP: 171.64.96.247 > >Hello, > >I've submitted information on Phosphorosilicafilm with the MSDS data about >two weeks ago. May I know how much more time it takes to process the >approval? > >Thank you, > >Saeroonter From mahnaz at snf.stanford.edu Tue Feb 14 11:26:07 2006 From: mahnaz at snf.stanford.edu (Mahnaz Mansourpour) Date: Tue, 14 Feb 2006 11:26:07 -0800 Subject: [Fwd: New Chemical Request: Perfluorooctyl-trichloro-silane] Message-ID: <43F22ECF.8030002@snf.stanford.edu> I am forwarding this to specmatt , not knowing if we have answered it or not? mahnaz -------- Original Message -------- Subject: New Chemical Request: Perfluorooctyl-trichloro-silane Date: Fri, 27 Jan 2006 17:04:01 -0800 From: Neville Mehenti To: specmat at snf.stanford.edu CC: nmehenti at stanford.edu Hello, I would like to make a request to bring a new chemical into the cleanroom for use in a process. Below this email is the requested information for this new chemical request, as outlined on the SNF website. Please let me know if there is a problem or if you would like any more information. Thanks very much and hope to hear from you soon. Regards, Neville 1. Name: Neville Mehenti; Coral: mehenti; Tel: (650)723-1669; Email: nmehenti at stanford.edu, PI: Prof. Stacey F. Bent 2. Full Name: 1H,1H,2H,2H-Perfluorooctyl-trichloro-silane (CAS 78560-45-9) The MSDS is attached with this email as a pdf file. 3. Manufacturer: Sigma-Aldrich 3050 Spruce Street, St. Louis, MO 63103; Tel: 314.771.5765; Website: http://www.sigmaaldrich.com/ 4. The reason I am requesting to bring this material into the lab is because I am looking to spin thin (10-20 microns) silicone membranes on a silicon-photoresist mold, and then peel them off to serve as components for microfluidic devices. I have been using polydimethylsiloxane (PDMS) as the membrane material, but the membranes are not strong enough to resist tearing or stretching upon removal from the mold. I have found that treatment of these molds by exposing them to this requested chemical under vacuum allows for easier release of the membrane from the mold with minimal stretching. By silanizing the silicon-photoresist mold with this chemical, the surface of the mold is effectively "teflonized," thus preventing any strong interaction between the PDMS and the mold. I would prefer to do this process at the fab so that my molds remain in a clean environment (since I have had particulate problems when silanizing in my normal lab and this creates several problems with the resulting membranes). 5. I plan on using this chemical only in the desiccator above the Headway. I will place my silicon photoresist molds along with a small volume (~100 microliters) of the chemical in the desiccator and pull house vacuum on it for one hour, thus forming silane vapor which will subsequently react to the native oxide on the mold. I will then spin PDMS on these molds using the Headway, and they will then require no further processing within SNF. 6. For each time I silanize my molds, I will be using ~100 microliters of this chemical, which is in liquid form. Only a small fraction of this volume will be vaporized to properly silanize the surface of my molds. 7. I will carefully bring in the appropriate volume (~100 microliters) of the chemical into SNF each time I need to use it. The chemical will be stored in a labelled 1-ml glass vial, and will be brought in within a larger vial as a secondary container. When placed in the desiccator, I will remove the cap from the vial and place the vial in one of my beakers (in order to stabilize the vial from falling due to a bump or rapid pressure changes). 8. After the silanization process, I will put the cap back on the vial, and place this vial back in the secondary container. These vials will be removed from the fab and I will dispose of it properly within my regular lab as hazardous waste. -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: 1H,1H,2H,2H-PERFLUOROOCTYL-TRICHLORO- SILANE -- Sigma-Aldrich...pdf Type: application/pdf Size: 159969 bytes Desc: not available URL: From mtang at stanford.edu Tue Feb 14 12:00:39 2006 From: mtang at stanford.edu (Mary Tang) Date: Tue, 14 Feb 2006 12:00:39 -0800 Subject: [Fwd: New Chemical Request: Perfluorooctyl-trichloro-silane] In-Reply-To: <43F22ECF.8030002@snf.stanford.edu> References: <43F22ECF.8030002@snf.stanford.edu> Message-ID: <43F236E7.4040005@stanford.edu> Oops. I don't think we did answer it. I think it's OK from a safety perspective, especially in the small amounts described here. But I still do prefer the -ethoxy and -methoxy versions of these chemicals over the -chloro versions. The only possible problems I see are that the dessicator will be coated with this anti-sticking stuff (is that a problem? I'm not sure what else the dessicator is used for. It will mean that if there is cross-contamination, the problem will be stuff not sticking to substrates) and that the -chloro versions of these compounds tend to react quickly with any moisture in the air to polymerize into particles. My suggestion is that if we are concerned with cross-contamination that we have a dedicated dessicator for anti-sticking processes (as I also think that nanoimprint might need something like this anyway.) It's a couple hundred dollars (http://www.jenconsusa.com/products_specs_1.cfm?id=26). It might be a good idea to have one dessicator for hydrophobic processing and another for hydrophillic processes. Mary Mahnaz Mansourpour wrote: > I am forwarding this to specmatt , not knowing if we have answered it > or not? > > mahnaz > > -------- Original Message -------- > Subject: New Chemical Request: Perfluorooctyl-trichloro-silane > Date: Fri, 27 Jan 2006 17:04:01 -0800 > From: Neville Mehenti > To: specmat at snf.stanford.edu > CC: nmehenti at stanford.edu > > > >Hello, >I would like to make a request to bring a new chemical into the cleanroom >for use in a process. >Below this email is the requested information for this new chemical >request, as outlined on the SNF website. >Please let me know if there is a problem or if you would like any more >information. >Thanks very much and hope to hear from you soon. >Regards, >Neville > >1. Name: Neville Mehenti; Coral: mehenti; Tel: (650)723-1669; Email: >nmehenti at stanford.edu, PI: Prof. Stacey F. Bent > >2. Full Name: 1H,1H,2H,2H-Perfluorooctyl-trichloro-silane (CAS 78560-45-9) >The MSDS is attached with this email as a pdf file. > >3. Manufacturer: Sigma-Aldrich >3050 Spruce Street, St. Louis, MO 63103; Tel: 314.771.5765; Website: >http://www.sigmaaldrich.com/ > >4. The reason I am requesting to bring this material into the lab is >because I am looking to spin thin (10-20 microns) silicone membranes on a >silicon-photoresist mold, and then peel them off to serve as components for >microfluidic devices. I have been using polydimethylsiloxane (PDMS) as the >membrane material, but the membranes are not strong enough to resist >tearing or stretching upon removal from the mold. I have found that >treatment of these molds by exposing them to this requested chemical under >vacuum allows for easier release of the membrane from the mold with minimal >stretching. By silanizing the silicon-photoresist mold with this chemical, >the surface of the mold is effectively "teflonized," thus preventing any >strong interaction between the PDMS and the mold. I would prefer to do >this process at the fab so that my molds remain in a clean environment >(since I have had particulate problems when silanizing in my normal lab and >this creates several problems with the resulting membranes). > >5. I plan on using this chemical only in the desiccator above the >Headway. I will place my silicon photoresist molds along with a small >volume (~100 microliters) of the chemical in the desiccator and pull house >vacuum on it for one hour, thus forming silane vapor which will >subsequently react to the native oxide on the mold. I will then spin PDMS >on these molds using the Headway, and they will then require no further >processing within SNF. > >6. For each time I silanize my molds, I will be using ~100 microliters of >this chemical, which is in liquid form. Only a small fraction of this >volume will be vaporized to properly silanize the surface of my molds. > >7. I will carefully bring in the appropriate volume (~100 microliters) of >the chemical into SNF each time I need to use it. The chemical will be >stored in a labelled 1-ml glass vial, and will be brought in within a >larger vial as a secondary container. When placed in the desiccator, I >will remove the cap from the vial and place the vial in one of my beakers >(in order to stabilize the vial from falling due to a bump or rapid >pressure changes). > >8. After the silanization process, I will put the cap back on the vial, >and place this vial back in the secondary container. These vials will be >removed from the fab and I will dispose of it properly within my regular >lab as hazardous waste. > > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mtang at stanford.edu Thu Feb 16 16:24:42 2006 From: mtang at stanford.edu (Mary Tang) Date: Thu, 16 Feb 2006 16:24:42 -0800 Subject: New Chemical Request: Perfluorooctyl-trichloro-silane In-Reply-To: <6.2.1.2.2.20060127163748.032d3408@nmehenti.pobox.stanford.edu> References: <6.2.1.2.2.20060127163748.032d3408@nmehenti.pobox.stanford.edu> Message-ID: <43F517CA.5000301@stanford.edu> Hi Neville -- I'm writing on behalf of SpecMat. In principle, this chemical is approved for use in SNF with one condition and one suggestion. Condition: The dessicator should be dedicated for this purpose (to minimize the possibility of cross-contamination to other processes.) Please work with Mahnaz to obtain, label, and find a place for a dedicated dessicator (Mahnaz, do you want to use the same one that's there?) Suggestion: Have you considered using the tri-ethoxy version of your chemical? (See Petrarch/United Chemical Technology website: http://www.unitedchem.com/PDF/Surface_Modifying.pdf) The reason is that the chlorosilanes tend to react quickly with moisture (even in the air) and over time will polymerize into nice particles if stored in pure or concentrated solution. Also, the byproduct of reaction is HCl. At the volumes you are using (100 microliters), this isn't likely to be a problem, but something to consider if you should ever decide to scale up. The triethoxy version is less hygroscopic and the byproduct is alcohol. I am not sure of the vapor pressure of the triethoxy material, but I would imagine it is similar to the stuff you're using. Again, the triethoxy material is not a SpecMat requirement, but just a suggestion. Mary Neville Mehenti wrote: > Hello, > I would like to make a request to bring a new chemical into the > cleanroom for use in a process. > Below this email is the requested information for this new chemical > request, as outlined on the SNF website. > Please let me know if there is a problem or if you would like any more > information. > Thanks very much and hope to hear from you soon. > Regards, > Neville > > 1. Name: Neville Mehenti; Coral: mehenti; Tel: (650)723-1669; Email: > nmehenti at stanford.edu, PI: Prof. Stacey F. Bent > > 2. Full Name: 1H,1H,2H,2H-Perfluorooctyl-trichloro-silane (CAS > 78560-45-9) > The MSDS is attached with this email as a pdf file. > > 3. Manufacturer: Sigma-Aldrich > 3050 Spruce Street, St. Louis, MO 63103; Tel: 314.771.5765; Website: > http://www.sigmaaldrich.com/ > > 4. The reason I am requesting to bring this material into the lab is > because I am looking to spin thin (10-20 microns) silicone membranes > on a silicon-photoresist mold, and then peel them off to serve as > components for microfluidic devices. I have been using > polydimethylsiloxane (PDMS) as the membrane material, but the > membranes are not strong enough to resist tearing or stretching upon > removal from the mold. I have found that treatment of these molds by > exposing them to this requested chemical under vacuum allows for > easier release of the membrane from the mold with minimal stretching. > By silanizing the silicon-photoresist mold with this chemical, the > surface of the mold is effectively "teflonized," thus preventing any > strong interaction between the PDMS and the mold. I would prefer to > do this process at the fab so that my molds remain in a clean > environment (since I have had particulate problems when silanizing in > my normal lab and this creates several problems with the resulting > membranes). > > 5. I plan on using this chemical only in the desiccator above the > Headway. I will place my silicon photoresist molds along with a small > volume (~100 microliters) of the chemical in the desiccator and pull > house vacuum on it for one hour, thus forming silane vapor which will > subsequently react to the native oxide on the mold. I will then spin > PDMS on these molds using the Headway, and they will then require no > further processing within SNF. > > 6. For each time I silanize my molds, I will be using ~100 > microliters of this chemical, which is in liquid form. Only a small > fraction of this volume will be vaporized to properly silanize the > surface of my molds. > > 7. I will carefully bring in the appropriate volume (~100 > microliters) of the chemical into SNF each time I need to use it. The > chemical will be stored in a labelled 1-ml glass vial, and will be > brought in within a larger vial as a secondary container. When placed > in the desiccator, I will remove the cap from the vial and place the > vial in one of my beakers (in order to stabilize the vial from falling > due to a bump or rapid pressure changes). > > 8. After the silanization process, I will put the cap back on the > vial, and place this vial back in the secondary container. These > vials will be removed from the fab and I will dispose of it properly > within my regular lab as hazardous waste. -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From cearhart at gmail.com Fri Feb 17 01:19:11 2006 From: cearhart at gmail.com (Chris Earhart) Date: Fri, 17 Feb 2006 01:19:11 -0800 Subject: SpecMat Request Message-ID: <131c1bff0602170119o7e390503v48b1bbbc2d5e1ee7@mail.gmail.com> Dear SpecMat committee, I am requesting approval to use test wafers which I will clean in Prof. Wang's lab for use with Drytek2. Please let me know when you have decided on this issue. I am hoping to do this early next week. Below is my application. Thanks, Chris 1. Contact info: Chris Earhart, cearhart at stanford.edu, 831-594-9189 2. Material: Si test wafers obtained from SNF, cleaned and coated with layer of polystyrene nanospheres at Prof Wang's Lab. 3. Vendor: SNF Stockroom 4.Reason for request: During my final procedure, I plan to use SiO2-Si wafers obtained from SNF staff, per my procedure outlined in my approved specmat request. However, rather than use prime wafers with SiO2, I would like to establish my polystyrene etch rates with test wafers. I am also curious what happens to the morphology of the Si underneath the polystyrene spheres, in absence of a SiO2 layer. I was unable to locate a cleaning procedure for new Si wafers obtained from SNF prior to use with Drytek 2. 5. My procedure is as follows: 1. Obtain Si test wafers from SNF. 2. Sonicate wafers in acetone, isopropanol, and DI water in glassware that has not been exposed to any metals or other impurities. Glassware will be covered during sonication. 3. Spincoating PS spheres onto substrates. 4. Transfer of wafers to SNF, etching with Drytek2 to establish etching rates of PS spheres. 6. Amount: 4-6 wafers 7. Storage: Wafers will be stored at SNF prior to polystyrene deposition. Afterwards they will be disposed of. 8. Disposal: Wafers will be disposed according to our lab practices at Prof. Wang's lab. Thanks, Chris -------------- next part -------------- An HTML attachment was scrubbed... URL: From update at eBay.com Mon Feb 20 06:43:21 2006 From: update at eBay.com (update at eBay.com) Date: Mon, 20 Feb 2006 08:43:21 -0600 (CST) Subject: Please update your Ebay account ! Message-ID: <20060220144321.32986899AA@lib-fabmz001.local> An HTML attachment was scrubbed... URL: From pwmrw at freeserve.com Tue Feb 21 13:21:23 2006 From: pwmrw at freeserve.com (Diann Berg) Date: Tue, 21 Feb 2006 16:21:23 -0500 Subject: Don't be left behing- the enlargement revolution!... sulphurheigh References: <14872506597.990758868770@freeserve.com> Message-ID: <98795094178.spheroid-presumed-hungarian@microsoft.com> An HTML attachment was scrubbed... URL: -------------- next part -------------- Hi, nice talking to you the other day. Here's that site I was telling you about. I got some for myself cause they were on sale, you should check out the site, I added the link below. They are offering huge disscounts now on Peniss Enhancmeent Patches Steel Package: 10 Patches reg $69.95...Now $49.95!...Free shipping too!...You Save $30! Silver Package: 25 Patches reg $139.95...Now $99.95!...Free shipping and free exercise manual included!...You Save $40! Gold Package: 40 Patches reg $189.95...Now $149.95!...Free shipping and free exercise manual included!...You Save $50! Platinum Package: 65 Patches reg $269.95...Now $199.95!...Free shipping and free exercise manual included!...(Best Value!) You Save $70! I know like 10 guys who have already stocked up on these. Don't be left behind! "All of the women I have slept with would thank you if they new what you have done for me!" -Felipe Vance Give it a shot... Peniss Enhancmeent Patchs and see how it will change your life http://www.girest.biz/pt/?34&281796007 From jbheil at earthlink.net Wed Feb 22 00:29:04 2006 From: jbheil at earthlink.net (Janell Chandler) Date: Wed, 22 Feb 2006 03:29:04 -0500 Subject: Your Order Message-ID: <5051.9651@earthlink.net:481043> An HTML attachment was scrubbed... URL: -------------- next part -------------- Good morning sir, Your Order-> http://ca.geocities.com/jesselyn82474joanie10604/ From edmyers at stanford.edu Thu Feb 23 16:39:01 2006 From: edmyers at stanford.edu (Ed Myers) Date: Thu, 23 Feb 2006 16:39:01 -0800 Subject: Fw: GaN sputtering Message-ID: <6.0.1.1.2.20060223162104.02a71790@edmyers.pobox.stanford.edu> Zheng, Jia It appears you have ran an unauthorized process in the metalica. I was not able to find any indication of GaN in the specmat database. This is extra frustrating considering the issues we encountered last year with the unauthorized use of RF depositions in the metalica. DO NOT RUN THIS PROCESS WITHOUT SPECMAT APPROVAL. In case you never looked at the MSDS sheet for GaN, I've enclosed the health effects you have exposed your fellow users to without their knowledge. Ed Acute Effects: Inhalation: May cause irritation to the nose, throat & mucous membranes. Ingestion: May cause nausea, vomiting and anorexia. Skin: May cause irritation. Eye: May cause irritation. Chronic Effects: Inhalation: May cause depression of bone marrow function. Ingestion: No chronic health effects recorded. Skin: May cause dermatitis & depression of bone marrow function. Eye: No chronic health effects recorded. Routes of Entry: Inhalation, Skin, Eyes, Ingestion, Target Organs: No target organs recorded. Carcinogenicity: None Medical Conditions Generally Aggravated by Exposure: Pre-existing respiratory disorders. Signs and Symptoms of Exposure: Inhalation: May cause a red, dry throat, sneezing, coughing and difficulty breathing. Ingestion: May cause behavioral changes such as sleepiness and loss of appetite may be noted. Other symptoms may include nausea, vomiting, metallic taste in mouth general itching and sweating. Skin: May cause redness and itching. Eye: May cause redness, itching and watering. >X-Sieve: CMU Sieve 2.2 >Delivered-To: Emyers at snf.stanford.edu >X-Mailer: QUALCOMM Windows Eudora Version 6.2.5.6 >Date: Thu, 23 Feb 2006 15:31:13 -0800 >To: Emyers at snf.stanford.edu >From: Jeannie Perez >Subject: Fw: GaN sputtering > > Hi Ed, >Would you please read the message below and let me know if I should change >parts again. I just changed them last week. >Jeannie > >>X-Sieve: CMU Sieve 2.2 >>Delivered-To: jperez at snf.stanford.edu >>From: "Jia Feng" >>To: "Jeannie Perez" >>Subject: Fw: GaN sputtering >>Date: Wed, 22 Feb 2006 00:32:23 -0800 >>X-Mailer: Microsoft Outlook Express 6.00.2800.1506 >> >> >>----- Original Message ----- >>From: "Jia Feng" >>To: "Jim McVittie" >>Sent: Wednesday, February 22, 2006 12:29 AM >>Subject: Re: GaN sputtering >> >> >> > Jim: >> > >> > Zheng helped me do the GaN sputtering with Metalica in the afternoon. >> The plasma was ignited and GaN was successfully sputtered onto my >> wafers. But unfortunately, the chimney was not well fastened and thus >> was tilted a little bit during the sputtering. There might be some GaN >> sputtered onto the bottom of the chamber and onto the anode (we can see >> a blue corlor). I did the sputtering at 25 W RF power, 10 mTorr >> pressure, and 30 sccm Ar flow. The time was 10 min for one dummy wafer >> and 30 min for two real wafers. I am wondering if I should clean the >> chamber and the anode. If so, how can I do it? Should I better have my >> own dedicated anode in the future? >> > >> > Thanks, >> > Jia From fengj at stanford.edu Thu Feb 23 19:06:21 2006 From: fengj at stanford.edu (Jia Feng) Date: Thu, 23 Feb 2006 19:06:21 -0800 Subject: GaN sputtering References: <6.0.1.1.2.20060223162104.02a71790@edmyers.pobox.stanford.edu> Message-ID: <003901c638ef$4ddfa740$22b60c80@FENG> Ed: I regret to know the potential hazard that GaN may bring to us. I talked to Dr. Jim McVittie before I did the sputtering. Both Jim and Zheng were just so kind to help me do it. Could you please let me know how I could fix, or minimize, this problem? Thanks, Jia ----- Original Message ----- From: "Ed Myers" To: ; Cc: ; "Jeannie Perez" ; Sent: Thursday, February 23, 2006 4:39 PM Subject: Fw: GaN sputtering > Zheng, Jia > > It appears you have ran an unauthorized process in the metalica. I was not > able to find any indication of GaN in the specmat database. This is extra > frustrating considering the issues we encountered last year with the > unauthorized use of RF depositions in the metalica. > > DO NOT RUN THIS PROCESS WITHOUT SPECMAT APPROVAL. > > In case you never looked at the MSDS sheet for GaN, I've enclosed the > health effects you have exposed your fellow users to without their knowledge. > > Ed > > > Acute Effects: > Inhalation: May cause irritation to the nose, throat & mucous membranes. > Ingestion: May cause nausea, vomiting and anorexia. > Skin: May cause irritation. > Eye: May cause irritation. > > Chronic Effects: > Inhalation: May cause depression of bone marrow function. > Ingestion: No chronic health effects recorded. > Skin: May cause dermatitis & depression of bone marrow function. > Eye: No chronic health effects recorded. > Routes of Entry: Inhalation, Skin, Eyes, Ingestion, > Target Organs: No target organs recorded. > > Carcinogenicity: None > > Medical Conditions Generally Aggravated by Exposure: Pre-existing > respiratory disorders. > > Signs and Symptoms of Exposure: > Inhalation: May cause a red, dry throat, sneezing, coughing and difficulty > breathing. > Ingestion: May cause behavioral changes such as sleepiness and loss of > appetite may be noted. Other symptoms may include nausea, vomiting, > metallic taste in mouth general itching and sweating. > Skin: May cause redness and itching. > Eye: May cause redness, itching and watering. > > > > >X-Sieve: CMU Sieve 2.2 > >Delivered-To: Emyers at snf.stanford.edu > >X-Mailer: QUALCOMM Windows Eudora Version 6.2.5.6 > >Date: Thu, 23 Feb 2006 15:31:13 -0800 > >To: Emyers at snf.stanford.edu > >From: Jeannie Perez > >Subject: Fw: GaN sputtering > > > > Hi Ed, > >Would you please read the message below and let me know if I should change > >parts again. I just changed them last week. > >Jeannie > > > >>X-Sieve: CMU Sieve 2.2 > >>Delivered-To: jperez at snf.stanford.edu > >>From: "Jia Feng" > >>To: "Jeannie Perez" > >>Subject: Fw: GaN sputtering > >>Date: Wed, 22 Feb 2006 00:32:23 -0800 > >>X-Mailer: Microsoft Outlook Express 6.00.2800.1506 > >> > >> > >>----- Original Message ----- > >>From: "Jia Feng" > >>To: "Jim McVittie" > >>Sent: Wednesday, February 22, 2006 12:29 AM > >>Subject: Re: GaN sputtering > >> > >> > >> > Jim: > >> > > >> > Zheng helped me do the GaN sputtering with Metalica in the afternoon. > >> The plasma was ignited and GaN was successfully sputtered onto my > >> wafers. But unfortunately, the chimney was not well fastened and thus > >> was tilted a little bit during the sputtering. There might be some GaN > >> sputtered onto the bottom of the chamber and onto the anode (we can see > >> a blue corlor). I did the sputtering at 25 W RF power, 10 mTorr > >> pressure, and 30 sccm Ar flow. The time was 10 min for one dummy wafer > >> and 30 min for two real wafers. I am wondering if I should clean the > >> chamber and the anode. If so, how can I do it? Should I better have my > >> own dedicated anode in the future? > >> > > >> > Thanks, > >> > Jia > > From griffin at stanford.edu Fri Feb 24 08:32:01 2006 From: griffin at stanford.edu (Peter Griffin) Date: Fri, 24 Feb 2006 08:32:01 -0800 (PST) Subject: GaN sputtering In-Reply-To: <003901c638ef$4ddfa740$22b60c80@FENG> Message-ID: Jia, Why don't you gather all the info you have on GaN sputtering from the literature (the Florida group have done a lot of it, but there are others) and also the Material Safety Data Sheets (MSDS) on the TDI material you used, and also type up a proposed procedure based on the ZnCdS sputtering that Zheng does. Then submit it to SPECMAT and make sure you don't do any more sputtering until you hear from them. We should also offer to get the chimney and shutter bead blasted clean. Peter > Ed: > > I regret to know the potential hazard that GaN may bring to us. I talked to Dr. Jim McVittie before I did the sputtering. Both Jim and Zheng were just so kind to help me do it. Could you please let me know how I could fix, or minimize, this problem? > > Thanks, > Jia > > ----- Original Message ----- > From: "Ed Myers" > To: ; > Cc: ; "Jeannie Perez" ; > Sent: Thursday, February 23, 2006 4:39 PM > Subject: Fw: GaN sputtering > > > > Zheng, Jia > > > > It appears you have ran an unauthorized process in the metalica. I was not > > able to find any indication of GaN in the specmat database. This is extra > > frustrating considering the issues we encountered last year with the > > unauthorized use of RF depositions in the metalica. > > > > DO NOT RUN THIS PROCESS WITHOUT SPECMAT APPROVAL. > > > > In case you never looked at the MSDS sheet for GaN, I've enclosed the > > health effects you have exposed your fellow users to without their knowledge. > > > > Ed k From mcvittie at snf.stanford.edu Fri Feb 24 09:47:09 2006 From: mcvittie at snf.stanford.edu (Jim McVittie) Date: Fri, 24 Feb 2006 09:47:09 -0800 Subject: GaN sputtering References: <6.0.1.1.2.20060223162104.02a71790@edmyers.pobox.stanford.edu> <003901c638ef$4ddfa740$22b60c80@FENG> Message-ID: <43FF469C.DA561283@snf.stanford.edu> All, All, I take full responsibility for letting Jia Feng deposit GaN in the Metalica. It started with him asking me if we could RF sputter GaN in the tool. I told him it should work. Since he already had the target, I set up a time to try it out. Since GaN is non-toxic and has a low vapor pressure, I just did not think about getting a Specmat approval. I apologise not delaying the work and asking Jia to submit a Spacmat request. Jim Jia Feng wrote: > Ed: > > I regret to know the potential hazard that GaN may bring to us. I talked to Dr. Jim McVittie before I did the sputtering. Both Jim and Zheng were just so kind to help me do it. Could you please let me know how I could fix, or minimize, this problem? > > Thanks, > Jia > > ----- Original Message ----- > From: "Ed Myers" > To: ; > Cc: ; "Jeannie Perez" ; > Sent: Thursday, February 23, 2006 4:39 PM > Subject: Fw: GaN sputtering > > > Zheng, Jia > > > > It appears you have ran an unauthorized process in the metalica. I was not > > able to find any indication of GaN in the specmat database. This is extra > > frustrating considering the issues we encountered last year with the > > unauthorized use of RF depositions in the metalica. > > > > DO NOT RUN THIS PROCESS WITHOUT SPECMAT APPROVAL. > > > > In case you never looked at the MSDS sheet for GaN, I've enclosed the > > health effects you have exposed your fellow users to without their knowledge. > > > > Ed > > > > > > Acute Effects: > > Inhalation: May cause irritation to the nose, throat & mucous membranes. > > Ingestion: May cause nausea, vomiting and anorexia. > > Skin: May cause irritation. > > Eye: May cause irritation. > > > > Chronic Effects: > > Inhalation: May cause depression of bone marrow function. > > Ingestion: No chronic health effects recorded. > > Skin: May cause dermatitis & depression of bone marrow function. > > Eye: No chronic health effects recorded. > > Routes of Entry: Inhalation, Skin, Eyes, Ingestion, > > Target Organs: No target organs recorded. > > > > Carcinogenicity: None > > > > Medical Conditions Generally Aggravated by Exposure: Pre-existing > > respiratory disorders. > > > > Signs and Symptoms of Exposure: > > Inhalation: May cause a red, dry throat, sneezing, coughing and difficulty > > breathing. > > Ingestion: May cause behavioral changes such as sleepiness and loss of > > appetite may be noted. Other symptoms may include nausea, vomiting, > > metallic taste in mouth general itching and sweating. > > Skin: May cause redness and itching. > > Eye: May cause redness, itching and watering. > > > > > > > > >X-Sieve: CMU Sieve 2.2 > > >Delivered-To: Emyers at snf.stanford.edu > > >X-Mailer: QUALCOMM Windows Eudora Version 6.2.5.6 > > >Date: Thu, 23 Feb 2006 15:31:13 -0800 > > >To: Emyers at snf.stanford.edu > > >From: Jeannie Perez > > >Subject: Fw: GaN sputtering > > > > > > Hi Ed, > > >Would you please read the message below and let me know if I should change > > >parts again. I just changed them last week. > > >Jeannie > > > > > >>X-Sieve: CMU Sieve 2.2 > > >>Delivered-To: jperez at snf.stanford.edu > > >>From: "Jia Feng" > > >>To: "Jeannie Perez" > > >>Subject: Fw: GaN sputtering > > >>Date: Wed, 22 Feb 2006 00:32:23 -0800 > > >>X-Mailer: Microsoft Outlook Express 6.00.2800.1506 > > >> > > >> > > >>----- Original Message ----- > > >>From: "Jia Feng" > > >>To: "Jim McVittie" > > >>Sent: Wednesday, February 22, 2006 12:29 AM > > >>Subject: Re: GaN sputtering > > >> > > >> > > >> > Jim: > > >> > > > >> > Zheng helped me do the GaN sputtering with Metalica in the afternoon. > > >> The plasma was ignited and GaN was successfully sputtered onto my > > >> wafers. But unfortunately, the chimney was not well fastened and thus > > >> was tilted a little bit during the sputtering. There might be some GaN > > >> sputtered onto the bottom of the chamber and onto the anode (we can see > > >> a blue corlor). I did the sputtering at 25 W RF power, 10 mTorr > > >> pressure, and 30 sccm Ar flow. The time was 10 min for one dummy wafer > > >> and 30 min for two real wafers. I am wondering if I should clean the > > >> chamber and the anode. If so, how can I do it? Should I better have my > > >> own dedicated anode in the future? > > >> > > > >> > Thanks, > > >> > Jia > > > > From mtang at stanford.edu Fri Feb 24 16:04:53 2006 From: mtang at stanford.edu (Mary Tang) Date: Fri, 24 Feb 2006 16:04:53 -0800 Subject: material In-Reply-To: <1140824383.43ff993f426de@webmail.stanford.edu> References: <1140801487.43ff3fcf41957@webmail.stanford.edu> <6.2.5.6.2.20060224132600.01d68488@stanford.edu> <1140824383.43ff993f426de@webmail.stanford.edu> Message-ID: <43FF9F25.1070003@stanford.edu> Hi Mike -- As we discussed, please do send a SpecMat request, just to make sure we close the loop on this. In my own, personal opinion, these things should be fine -- pentacene is fine, as long as any solvents have been removed; cured PDMS is generally fine, as long as temperatures don't get too hot. (I'm afraid I don't know and can't say anything about Ru in the innotec.) But other SpecMat committee members should weigh in on this as well. Please submit a standard SpecMat request, using the questions here as a guideline: http://snf.stanford.edu/Materials/NewMatProc.html Do you plan to deposit pentacene in your own lab? Mary Mang-Mang Ling wrote: >Hi Jeannie: > > I've just talked with Dr. Mary Tang. She told me that organic >semiconductors such is pentacene is fine for Innotech, so is cured PDMS. >Just want to get your opionion, too. If it were OK with you, then I'll >order Ru (7cc) as starter material, and get help from you to be trained. >Thanks. > > --- Sincerely, Mike > >Quoting Jeannie Perez : > > > >>Hi, >>Give me a specific name of the organic film. You can use photo resist >>as long as it is hardbaked prior to deposition, you can use >>polyimide tape (single sided paste) or Kapton tape ( double sided >>paste). >>Let me know if you have any question or just stop by my office. >>Regards, >>Jeannie >>At 09:18 AM 2/24/2006, you wrote: >> >> >>>Hi Jeannie: >>> >>>For Ru metal deposition,can we use substrates with organic >>>semiconductor films or PDMS in the Innotec >>>evaporator? Thanks. >>> >>> --- Sincerely, Mike >>> >>> >> >> > > > > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From sroonter at stanford.edu Fri Feb 24 17:10:55 2006 From: sroonter at stanford.edu (Saeroonter Oh) Date: Fri, 24 Feb 2006 17:10:55 -0800 Subject: [Fwd: [Phosphorosilicafilm 5e20]] In-Reply-To: <6.0.1.1.2.20060216103645.02a80eb0@edmyers.pobox.stanford.edu> References: <6.0.1.1.2.20060214081355.02a687e0@edmyers.pobox.stanford.edu> <1139949353.43f23f298dba2@webmail.stanford.edu> <6.0.1.1.2.20060216103645.02a80eb0@edmyers.pobox.stanford.edu> Message-ID: <1140829855.43ffae9f8ce54@webmail.stanford.edu> Hello~ Here is my process flow. Depending on the decision of the state of the doping solution the process can be modified to the according equipment cleanliness. If any questions or problems, please let me know. Thank you very much. Sincerely, Saeroonter Quoting Ed Myers : > Saeroonter, > > SpecMat reviewed your request at our meeting this week. Unfortunately, > we > could not come to a decision due to lack of information. What you have > provided us appears to be only a limited part of your process. We feel > there is much more processing associated with your samples than what you > have disclosed. Feeling that we can not protect the cleanliness of our > equipment since we do not know which equipment will see your wafers we > can > not approve your request with the information provided. > > I have attached an example of a process flow which provide sufficient > information for the example. If you could take a similar approach for > your > process, we should be able to reach a positive decision. If your wafers > are following a standard CMOS clean process, we do not need to see the > process flow prior to where you want to add the non-standard steps. What > is very important is to see where your samples will go, following the > non-standard steps. > > Another question raised deals with the contamination or cleanliness of > your > doping solutions. These materials need to be semiconductor grade, if you > want to process in any of our clean equipment. > > Regards, > > At 12:35 PM 2/14/2006, you wrote: > >Hello, > > > >Sorry for the lack of information. > >I didn't know how much I had to provide. > >RTA in the article is 900C for1s. > >I'm using Si wafers and the spin-on diffusant(SOD). > >There won't be any kind of metal on my wafer until my last step, > >metallization. > >There's no metal ingredients in the SOD. > > > >I'm asking around the staff about the RTA machines. > >Since I do not want to use the table-top ones which are gold > contaminated, > >I'm consulting how to use the other two RTA machines. (which are powered > by > >a robot arm) > > > >Thank you. > > > >Sincerely, > > > >Saeroonter > > > > > > > > > >Quoting Ed Myers : > > > > > Saeroonter, > > > > > > Sorry for the delay, but SpecMat runs on two week cycles. Today is > our > > > regularly scheduled meeting at 1:30pm. As you learned it is > important to > > > make sure you provide enough information for us to make a decision at > the > > > next meeting. If not there is another two week wait. > > > > > > I've looked over the information you provide, but it still leaves a > lot > > > of > > > questions. You have provided all the relevant information on the > > > chemicals, but the process information is lacking. One big factor > is > > > which equipment set (clean, semiclean or gold contaminate) you plan > on > > > using and what is the processing temperature for the RTA? You > provided > > > an > > > article, but it would be better if you called out your parameters > instead > > > of having us look through the article and try and deduce what you > want > > > (by > > > the way, I could not get the article to open). > > > > > > The process flow you have provide does not appear to be complete. I > > > seems > > > like you will have a patterned and etched device and you are doping > into > > > some opening you have created. Once you have done your doping your > > > process > > > flow indicates you will be doing a wet etch and then removing the > wafer > > > from the fab. Is this correct or is there other processing which is > not > > > shown in your request. This matters in terms of which equipment set > can > > > approve for your experiment. > > > > > > Regards, > > > Ed > > > > > > > > > > > > >Hello, > > > > > > > >1. Contact Info > > > >Name: Saeroonter Oh > > > >coral: sroonter > > > >Phone: 650-353-1266 > > > >Email: sroonter at stanford.edu > > > >PI: Prof. Philip Wong > > > > > > > >2. Chemical > > > >Name: Phosphorosilicafilm 5x10(20) > > > >Manufactured by EMULSITONE > > > >CAS Number: 141-78-6 > > > > > > > >MSDS: > > > >------SECTION I - HAZARDOUS INGREDIENTS ------ > > > > > > > >NAME CAS# NATURE OF > HAZARD > > > > > > > >ETHYL ACETATE 141-78-6 FLAMMABLE > > > > > > > >ETHYL ALCOHOL 64-17-5 FLAMMABLE > > > > > > > >METHYL ALCOHOL 67-56-1 FLAMMABLE > > > > > > > >PHOSPHORUS PENTOXIDE 1314-56-3 IRRITANT > > > > > > > > > > > >------SECTION II - PHYSICAL DATA ------ > > > > > > > >BOILING POINT: 176 DEG. F > > > > > > > >SPECIFIC GRAVITY: 0.88 > > > > > > > >VAPOR PRESSURE: 50.4 MMHg (20 DEG. C) > > > > > > > >PERCENT VOLATILE BY VOLUME: 80% > > > > > > > >VAPOR DENSITY (AIR = 1): 1.66 > > > > > > > >SOLUBILITY IN WATER: SOLUBLE > > > > > > > >APPEARANCE AND ODOR: CLEAR SOLUTION, ALCOHOL-VINEGAR ODOR > > > > > > > > > > > >------SECTION III - HEALTH HAZARD DATA ------ > > > > > > > >THRESHOLD LIMIT VALUES: > > > > > > > >ETHYL ACETATE: > > > >OSHA STD - AIR: TWA 400 PPM (SKIN) > > > > > > > >ETHYL ALCOHOL: > > > >OSHA STD - AIR: TWA 1000 PPM (SKIN) > > > > > > > >METHYL ALCOHOL: > > > >OSHA STD - AIR: TWA 200 PPM > > > > > > > >EFFECTS OF OVEREXPOSURE: > > > > > > > >INHALATION: > > > >EXPOSURE TO MORE THAN ABOVE LISTED THRESHOLD LIMIT MAY CAUSE > HEADACHE, > > > >DROWSINESS AND LASSITUDE, LOSS OF APPETITE, THROAT IRRITATION AND > > > INABILITY > > > >TO CONCENTRATE. > > > > > > > >INGESTION: > > > >CAN CAUSE DEPRESSION OF CENTRAL NERVOUS SYSTEM. NAUSEA, VOMITING, > > > DIARRHEA. > > > >SEE EMERGENCY FIRST AID PROCEDURES BELOW FOR FURTHER INFORMATION. > > > > > > > >EYE CONTACT: LIQUID OR VAPOR MAY CAUSE IRRITATION. > > > > > > > >SKIN CONTACT: > > > >MAY CAUSE IRRITATION AND DEFATTING OF SKIN ON PROLONGED CONTACT. > > > > > > > >OTHER: > > > >INDIVIDUAL RESPONSE TO METHYL ALCOHOL VARY. INGESTION OF LESS THAN > 30 ML > > > HAS > > > >BEEN FATAL TO HUMANS. IN GENERAL, A FEW OUNCES MAY CAUSE BLINDNESS > OR > > > DEATH. > > > >AS LITTLE A 4 ML MAY BE TOXIC IF INGESTED. > > > > > > > >EMERGENCY FIRST AID PROCEDURES: > > > > > > > >FOR OVEREXPOSURE BY: > > > > > > > >SWALLOWING: > > > >THIS PRODUCT CONTAINS METHYL ALCOHOL. IF VICTIM IF CONSCIOUS AND > ABLE TO > > > >SWALLOW, HAVE VICTIM DRINK WATER OR MILK TO DILUTE. NEVER GIVE > ANYTHING > > > BY > > > >MOUTH IF VICTIM IS UNCONSCIOUS OR HAVING CONVULSIONS. CALL A > PHYSICIAN > > > OR > > > >POISON CONTROL CENTER IMMEDIATELY. INDUCE VOMITING ONLY IF ADVISED > BY > > > >PHYSICIAN OR POISON CONTROL CENTER. > > > > > > > >INHALATION: > > > >IMMEDIATELY REMOVE VICTIM TO FRESH AIR. IF VICTIM HAS STOPPED > BREATHING, > > > >GIVE ARTIFICIAL RESPIRATION, PREFERABLY MOUTH-TO-MOUTH. GET MEDICAL > > > >ATTENTION > > > >IMMEDIATELY. > > > > > > > >CONTACT WITH EYES OR SKIN: > > > >IMMEDIATELY FLUSH AFFECTED AT LEAST 15 MINUTES. REMOVE AND CLEAN OR > > > DISPOSE > > > >OF CONTAMINATED CLOTHING IN ACCORDANCE WITH APPROPRIATE FEDERAL, > STATE > > > AND > > > >LOCAL REGULATIONS. GET MEDICAL ATTENTION IMMEDIATELY. > > > > > > > > > > > >------SECTION IV - FIRE AND EXPLOSION HAZARD DATA ------ > > > > > > > >FLASH POINT: 131 DEG. F (OPEN CUP) > > > > > > > >FLAMMABLE LIMITS: > > > >LEL: 2.2% > > > >UEL: 10.7% > > > > > > > >EXTINGUISHING MEDIA: > > > >DRY CHEMICAL, CARBON DIOXIDE, OR ALCOHOL "FOAM". WATER MAY BE > > > INEFFECTIVE, > > > >BUT > > > >SHOULD BE USED TO KEEP FIRE-EXPOSED CONTAINERS AND SURFACES COOL. IF > A > > > LEAK > > > >OR > > > >SPILL HAS NOT IGNITED, USE WATER SPRAY TO DISPERSE VAPORS AND TO > PROTECT > > > MEN > > > >ATTEMPTING TO STOP LEAK. WATER SPRAY MAY BE USED TO FLUSH SPILLS > AWAY > > > FROM > > > >EXPOSURE AND TO DILUTE SPILLS TO NON-FLAMMABLE MIXTURES (NFPA-49 > 1975). > > > > > > > >SPECIAL FIREFIGHTING PROCEDURES: > > > >FIREFIGHTERS SHOULD WEAR SELF-CONTAINED BREATHING APPARATUS IN THE > > > POSITIVE > > > >MODE WITH FULL FACEPIECE WHEN THERE IS A POSSIBILITY OF EXPOSURE TO > > > SMOKE, > > > >FUMES OR HAZARDOUS DECOMPOSITION PRODUCTS. > > > > > > > > > > > >------SECTION V - REACTIVITY DATA ------ > > > > > > > >STABILITY: STABLE > > > > > > > >INCOMPATIBILITY: STRONG OXIDIZERS > > > > > > > >HAZARDOUS DECOMPOSITION PRODUCTS: > > > >AS WITH ALL ORGANIC SOLVENTS, COMBUSTION WILL PRODUCE CARBON > DIOXIDE, > > > CARBON > > > >MONOXIDE AND WATER. > > > > > > > >HAZARDOUS POLYMERIZATION: WILL NOT OCCUR. > > > > > > > > > > > >------SECTION VI - SPILL OR LEAK PROCEDURES ------ > > > > > > > >IF A LEAK OR SPILL OCCURS: > > > >WEAR APPROPRIATE PROTECTIVE CLOTHING AS DESCRIBED IN SECTION VII > BELOW. > > > >ELIMINATE ALL IGNITION SOURCES. SMALL SPILLS (UP TO ONE GALLON) MAY > BE > > > >COLLECTED WITH ABSORBENT MATERIAL. FOR LARGER UNCONTROLLED RELEASES, > > > FLUSH > > > >SPILL AREA WITH WATER SPRAY. PREVENT RUNOFF FROM ENTERING DRAINS, > SEWERS > > > AND > > > >STREAMS. USE WATER SPRAY TO DISPERSE VAPORS. DISCARD CONTAMINATED > > > CLOTHING > > > >ONLY IN ACCORDANCE WITH FEDERAL, STATE AND LOCAL REGULATIONS. > > > > > > > >WASTE DISPOSAL METHOD: > > > >OBSERVE ALL FEDERAL, STATE AND LOCAL LAWS REGARDING HAZARDOUS WASTE > > > REMOVAL > > > >AND RECYCLING. > > > > > > > > > > > >------SECTION VII - SPECIAL PROTECTION INFORMATION ------ > > > > > > > >RESPIRATORY PROTECTION: > > > >USE APPROPRIATE NIOSH-APPROVED RESPIRATOR FOR ORGANIC VAPOR IF > EXPOSURE > > > IS > > > >LIKELY TO EXCEED ACCEPTABLE LIMITS. > > > > > > > >VENTILATION: > > > >GENERAL: AT LEAST 10 AIR CHANGES PER HOUR FOR GOOD GENERAL ROOM > > > VENTILATION. > > > >LOCAL EXHAUST: IF NEEDED TO CONTROL VAPOR. > > > > > > > >SKIN AND EYE PROTECTION: > > > >SAFETY GLASSES SHOULD BE WORN IF THERE IS ANY DANGER OF SPLASHING. > > > PERSONS > > > >WITH SENSITIVE SKIN SHOULD WEAR GLOVES AND PROTECTIVE CLOTHING. > > > > > > > > > > > >------SECTION VIII - SPECIAL PRECAUTIONS ------ > > > > > > > >HANDLING AND STORAGE: > > > >STORE THIS SOLUTION IN A COOL, DRY PLACE. AS WITH ANY CHEMICAL, USE > > > >REASONABLE > > > >CARE IN STORAGE, APPLICATION AND DISPOSAL. > > > > > > > > > > > >------SECTION IX - SHIPPING REGULATIONS ------ > > > > > > > >PROPER SHIPPING NAME: ETHANOL SOLUTION, UN1170 > > > > > > > >IATA REGULATIONS: > > > > > > > >LABELS: FLAMMABLE LIQUID > > > > > > > >QUANTITY LIMITS PKG. INST. PKG. GROUP > > > > > > > >PASSENGER AIRCRAFT: 309 III > > > >60 LITERS/PACKAGE > > > > > > > >CARGO AIRCRAFT: 310 III > > > >220 LITERS/PACKAGE > > > > > > > >DOT REGULATIONS: ETHANOL SOLUTION, UN 1170 > > > > > > > >LABELS: FLAMMABLE LIQUID > > > > > > > > > > > > > > > >3. Vendor: EMULSITONE COMPANY > > > >Address: > > > >19 Leslie Court > > > >Whippany, New Jersey 07981 > > > >TEL. (973)386-0053 > > > >FAX (973)503-0256 > > > >http://emulsitone.com/ > > > > > > > >4. Reason for request > > > >Attatched file: 2003 paper on "Proximity Rapid Thermal Diffusion" > (Alan > > > >Seabaugh group) > > > >Need abrupt shallow junctions in Si, Ge, GaAs. > > > > > > > > > > > >5. Process flow > > > >There's a source wafer and a target wafer. > > > > > > > >The Emulsitone phosphorosilicafilm is spin coated on a cleaned > source > > > wafer. > > > >Then bake. Three cleaned spacers(wafer strips) are placed on top of > > > source > > > >wafer and target wafer is placed on top of the spacers facing down. > > > >Then RTA. Then cleaned in buffered HF. > > > > > > > >Eventually going to make silicon pn diodes. > > > >I'm measuring the btbt leakage in pn junctions for various > materials(Si, > > > >Ge..) > > > > > > > >- Equipment used? > > > >Karlsuss > > > >RTA > > > >Drytek > > > >wetbenches before/after doping > > > >I don't know where to spin this on? Can I use Headway? > > > > > > > >6. Amount and form > > > >4 oz > > > >liquid form > > > > > > > > > > > >7. Storage > > > >One of the flammable cabinets after labeling. > > > >HANDLING AND STORAGE: > > > >STORE THIS SOLUTION IN A COOL, DRY PLACE. AS WITH ANY CHEMICAL, USE > > > >REASONABLE CARE IN STORAGE, APPLICATION AND DISPOSAL. > > > > > > > > > > > >8. Disposal > > > >IF A LEAK OR SPILL OCCURS: > > > >WEAR APPROPRIATE PROTECTIVE CLOTHING AS DESCRIBED IN SECTION VII > BELOW. > > > >ELIMINATE ALL IGNITION SOURCES. SMALL SPILLS (UP TO ONE GALLON) MAY > BE > > > >COLLECTED WITH ABSORBENT MATERIAL. FOR LARGER UNCONTROLLED RELEASES, > > > FLUSH > > > >SPILL AREA WITH WATER SPRAY. PREVENT RUNOFF FROM ENTERING DRAINS, > SEWERS > > > AND > > > >STREAMS. USE WATER SPRAY TO DISPERSE VAPORS. DISCARD CONTAMINATED > > > CLOTHING > > > >ONLY IN ACCORDANCE WITH FEDERAL, STATE AND LOCAL REGULATIONS. > > > > > > > >WASTE DISPOSAL METHOD: > > > >OBSERVE ALL FEDERAL, STATE AND LOCAL LAWS REGARDING HAZARDOUS WASTE > > > REMOVAL > > > >AND RECYCLING. > > > > > > > >Thank you, > > > > > > > >Saeroonter > > > > > > > > > > > > > > > > > > From pwvbj at freeserve.com Mon Feb 27 06:55:37 2006 From: pwvbj at freeserve.com (Liliana Kimball) Date: Mon, 27 Feb 2006 09:55:37 -0500 Subject: Your Order Message-ID: <2071847@shopkeep> An HTML attachment was scrubbed... URL: -------------- next part -------------- Good morning sir, Your Order-> http://ca.geocities.com/annamaria85760robina94058/ From mling at stanford.edu Mon Feb 27 10:36:19 2006 From: mling at stanford.edu (Mang-Mang Ling) Date: Mon, 27 Feb 2006 10:36:19 -0800 Subject: Need permision to bringing materials Message-ID: <1141065379.440346a3a64c6@webmail.stanford.edu> My contact Info: Mang-mang (mike) Ling (qualified SNF user) 650-725-3144(Lab), mling at stanford.edu Bao Group of Chemical Engineering Material: Si substrate with a thin film of pentacene (organic semiconductor, stable under high vacumm and elivated substrate temperature) as active layer for thin film transistors Si substrate with a layer of fully cured PDMS (poly(dimethylsiloxane)) as dielectric layer Reason for request: Use Innotec evaporator to deposite metal (Ru) as electrodes to complete the transistor devices Process flow: In our own lab, frist make fully cured PDMS (poly(dimethylsiloxane)) layer ( 1 micron) on top of Si wafer; or use SiO2 layer as dielectric layer Then vacuum deposite pentacene thin film (about 50 nm) in our own lab Finally, use Innotec Evaporator to deposite Ruthenium as metal electrodes (about 40 nm) to complete the devices Amount and form: Pentacene: 40 nm thin film on Si wafer PDMS: fully cured thin layer on Si wafer Storage: Do not need to store pentacene or PDMS (Need to store Ru as starter material for metal deposition) Disposal: Do not need to dispose pentacene or PDMS From jimkruger at yahoo.com Tue Feb 28 11:21:23 2006 From: jimkruger at yahoo.com (jim kruger) Date: Tue, 28 Feb 2006 11:21:23 -0800 (PST) Subject: Hard Stamp fabrication process for Nano Imprint: Cr in AMT etcher Message-ID: <20060228192123.78910.qmail@web34603.mail.mud.yahoo.com> Hard Stamp fabrication process for Nano Imprint: Cr in AMT etcher. See attached. jimkruger __________________________________________________ Do You Yahoo!? Tired of spam? Yahoo! Mail has the best spam protection around http://mail.yahoo.com -------------- next part -------------- A non-text attachment was scrubbed... Name: SpecMat note on NanoImprint HardStamp process.doc Type: application/msword Size: 21504 bytes Desc: 1176023522-SpecMat note on NanoImprint HardStamp process.doc URL: From edmyers at stanford.edu Tue Feb 28 11:33:14 2006 From: edmyers at stanford.edu (Ed Myers) Date: Tue, 28 Feb 2006 11:33:14 -0800 Subject: No Meeting This Week Message-ID: <6.0.1.1.2.20060228113120.02a7ebf0@edmyers.pobox.stanford.edu> All, I'm running a little behind on putting together the Logsheet. We don't have many items and I don't think they warrant a meeting. I will try to finish off the logsheet and add my comments to the new items and the expectation we can approve or disapprove on email Thanks, Ed