Fw: GaN sputtering

Ed Myers edmyers at stanford.edu
Thu Feb 23 16:39:01 PST 2006

Zheng, Jia

It appears you have ran an unauthorized process in the metalica.  I was not 
able to find any indication of GaN in the specmat database.  This is extra 
frustrating considering the issues we encountered last year with the 
unauthorized use of RF depositions in the metalica.


In case you never looked at the MSDS sheet for GaN, I've enclosed the 
health effects you have exposed your fellow users to without their knowledge.


Acute Effects:
Inhalation: May cause irritation to the nose, throat & mucous membranes.
Ingestion: May cause nausea, vomiting and anorexia.
Skin: May cause irritation.
Eye: May cause irritation.

Chronic Effects:
Inhalation: May cause depression of bone marrow function.
Ingestion: No chronic health effects recorded.
Skin: May cause dermatitis & depression of bone marrow function.
Eye: No chronic health effects recorded.
Routes of Entry: Inhalation, Skin, Eyes, Ingestion,
Target Organs: No target organs recorded.

Carcinogenicity: None

Medical Conditions Generally Aggravated by Exposure: Pre-existing 
respiratory disorders.

Signs and Symptoms of Exposure:
Inhalation: May cause a red, dry throat, sneezing, coughing and difficulty 
Ingestion: May cause behavioral changes such as sleepiness and loss of 
appetite may be noted. Other symptoms may include nausea, vomiting, 
metallic taste in mouth general itching and sweating.
Skin: May cause redness and itching.
Eye: May cause redness, itching and watering.

>X-Sieve: CMU Sieve 2.2
>Delivered-To: Emyers at snf.stanford.edu
>X-Mailer: QUALCOMM Windows Eudora Version
>Date: Thu, 23 Feb 2006 15:31:13 -0800
>To: Emyers at snf.stanford.edu
>From: Jeannie Perez <nperez at stanford.edu>
>Subject: Fw: GaN sputtering
>  Hi Ed,
>Would you please read the message below and let me know if I should change 
>parts again. I just changed them last week.
>>X-Sieve: CMU Sieve 2.2
>>Delivered-To: jperez at snf.stanford.edu
>>From: "Jia Feng" <fengj at stanford.edu>
>>To: "Jeannie Perez" <jperez at snf.stanford.edu>
>>Subject: Fw: GaN sputtering
>>Date: Wed, 22 Feb 2006 00:32:23 -0800
>>X-Mailer: Microsoft Outlook Express 6.00.2800.1506
>>----- Original Message -----
>>From: "Jia Feng" <fengj at stanford.edu>
>>To: "Jim McVittie" <mcvittie at cis.Stanford.EDU>
>>Sent: Wednesday, February 22, 2006 12:29 AM
>>Subject: Re: GaN sputtering
>> > Jim:
>> >
>> > Zheng helped me do the GaN sputtering with Metalica in the afternoon. 
>> The plasma was ignited and GaN was successfully sputtered onto my 
>> wafers. But unfortunately, the chimney was not well fastened and thus 
>> was tilted a little bit during the sputtering. There might be some GaN 
>> sputtered onto the bottom of the chamber and onto the anode (we can see 
>> a blue corlor). I did the sputtering at 25 W RF power, 10 mTorr 
>> pressure, and 30 sccm Ar flow. The time was 10 min for one dummy wafer 
>> and 30 min for two real wafers. I am wondering if I should clean the 
>> chamber and the anode. If so, how can I do it? Should I better have my 
>> own dedicated anode in the future?
>> >
>> > Thanks,
>> > Jia

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