Need permision to bringing materials

Mary Tang mtang at
Wed Mar 1 14:53:02 PST 2006

Hi all --

Mang-Mang is asking about this...  I don't think it's a problem, but 
what do you all think?  I don't know if PDMS has officially been 
approved for innotec before, although I think it may been approved/used 
in metalica by Claudia Richter.  I think if the substrate temperature is 
kept below 200 C, we're pretty safe.  My inclination is to approve this, 
making sure we notify Jeannie in case anything comes up.  What do you 
all think?


Mang-Mang Ling wrote:

>My contact Info:
>Mang-mang (mike) Ling (qualified SNF user)
>mling at
>Bao Group of Chemical Engineering
>Si substrate with a thin film of pentacene (organic semiconductor,
>stable under high vacumm and elivated substrate temperature) as active layer
>for thin film transistors
>Si substrate with a layer of fully cured PDMS
>(poly(dimethylsiloxane)) as dielectric layer
>Reason for request:
>Use Innotec evaporator to deposite metal (Ru)
>as electrodes to complete the transistor devices
>Process flow:
>In our own lab, frist make fully cured PDMS
>(poly(dimethylsiloxane)) layer ( 1 micron) on top of Si wafer;
>or use SiO2 layer as dielectric layer
>Then vacuum deposite pentacene thin film (about 50 nm) in our own lab
>Finally, use Innotec Evaporator to deposite Ruthenium
>as metal electrodes (about 40 nm) to complete the devices
>Amount and form:
>Pentacene: 40 nm thin film on Si wafer
>PDMS: fully cured thin layer on Si wafer
>Do not need to store pentacene or PDMS
>(Need to store Ru as starter material for metal deposition)
>Do not need to dispose pentacene or PDMS

Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
mtang at

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