From kdegreve at stanford.edu  Thu Apr  5 23:27:43 2007
From: kdegreve at stanford.edu (Kristiaan De Greve)
Date: Thu,  5 Apr 2007 23:27:43 -0700
Subject: anisotropic sputter etching of ZnSe/GaAs in MRC tool
Message-ID: <1175840863.4615e85facff8@webmail.stanford.edu>

Dear Madam or Sir,

after having discussed with Jim McVittie about the possibility of doing
anisotropic etching/sputter etching-ion milling at Stanford, I would like
to file a request to use the MRC Argon plasma.

The basic thing I am looking for is anisotropic etching of ZnMgSe (up to 18%
Mg) MBE grown epilayers on GaAs substrates, in order to make freestanding
mesas and microdisks. Mesas and microdisks (resp. sizes: 50-200 nm and ~1
um) are lithographically defined by e-beam writing on negative e-beam
resist layer of ~ 200 nm (MAN 2403).

In the official SpecMat form:

1) name: Kristiaan De Greve, kdegreve in coral, 650 283 0803 (cell),
kdegreve at stanford.edu, EE PhD student in Yoshi Yamamoto's group.

2) * material: zincselenide(ZnSe)/zincmagnesiumselenide(ZnMgSe, ~18% Mg)
heterostrocture, epilayer (~80nm) on GaAs substrate, small pieces of 3x4mm;
covered with developed MAN2403 negative e-beam resist
   * main hazards: - GaAs: toxic when inhaled/swallowed, possibly
carcinogenic, http://www.wafertech.co.uk/msds/msds_gaas.html for the MSDS
                   - ZnSe: toxic when inhaled, swallowed,
http://ptcl.chem.ox.ac.uk/MSDS/ZI/zinc_selenide.html for the MSDS

   * storage group: it's not really a chemical, I don't see any category
under which it would fall

3) 'supplyer': MBE grown at the university of Paderborn, Germany, by Dr.
Alex Pawlis in the group of prof. Klaus Lischka (apawlis at mail.upb.de)

4) reason for request: in order to isolate small ZnSe mesa structures, we
need a dry etching (preferrably) or sputter etching process that can
anisotropically transfer patterns written into negative e-beamresist into
the ZnSe/GaAs; the mesa height is about 100 nm, i.e. into the GaAs
substrate.

After talking with Jim McVittie, the option of sputter etching was withheld
(the alternative, dry etching in the PQuest - a tool initially purchased by
the Yamamoto group! - meeting resistance from GaAs III-V laser processors
who fear contamination of Zn into their processes). As the Ar plasma is
essentially non reactive, this tool has been used in the past for ion
milling/sputter etching of all kinds of materials, including Zn compounds.

No other tools are available for anitropic etching of these ZnSe epilayers;
wet etching loses quite some resolution, and the MRC plasma, although
second to the PQuest, would be of tremendous help with our experiments.

5) process flow: - spin coating of MAN 2403 resist, 3000 rpm 30s, curing
                   @90deg C, 1' @Ginzton cleanroom (3x4 mm pieces)
                 - e-beam writing in Raith 150, 360 uC dose, 10 kV
                   acceleration voltage
                 - development of MAN resist in MaD532, 30s, rinse with DI
                   water
                 - sputter etching in MRC, negative e-beam resist as mask
                 - resist stripping in MAN resist stripper (remover 1165)
                   in Ginzton cleanroom

6) amount and form: 3x4 wafer pieces, 3-4 pieces in a run

7) storage: in sample holders and subsequently vacuum chambers in Ginzton
labs

8) disposal: these samples are actively measured and remeasured (optical,
cryogenic experiments); left-over pieces are disposed of as hazardous waste
in Ginzton labs.

Many thanks and best regards,

Kristiaan De Greve.


From uli at snf.stanford.edu  Fri Apr  6 17:53:42 2007
From: uli at snf.stanford.edu (Uli Thumser)
Date: Fri, 06 Apr 2007 17:53:42 -0700
Subject: [Fwd: Fw: Ga-In-Sn Oxide (GITO)]
Message-ID: <4616EB96.3070607@snf.stanford.edu>


-- 
Uli Thumser
Stanford Nanofabrication Facility
Center for Integrated Systems
420 Via Palou Mall, CIS Room 146
Stanford, CA  94305
(650)725-3694
uli at snf.stanford.edu

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From dermckean at yahoo.com  Tue Apr 10 00:06:48 2007
From: dermckean at yahoo.com (Dennis McKean)
Date: Tue, 10 Apr 2007 00:06:48 -0700 (PDT)
Subject: Chemical approval for nanoimprint resist
Message-ID: <13625.66127.qm@web50510.mail.re2.yahoo.com>

I would like to get chemical approval to bring in a nanoimprint resist from Microresist Technology, UVCur06, and its solvent thinner.  Both msds's are attached. Thanks for your consideration.
Sincerely,
Dennis McKean


       
____________________________________________________________________________________
Don't pick lemons.
See all the new 2007 cars at Yahoo! Autos.
http://autos.yahoo.com/new_cars.html 
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From dermckean at yahoo.com  Tue Apr 10 00:06:48 2007
From: dermckean at yahoo.com (Dennis McKean)
Date: Tue, 10 Apr 2007 00:06:48 -0700 (PDT)
Subject: Chemical approval for nanoimprint resist
Message-ID: <13625.66127.qm@web50510.mail.re2.yahoo.com>

I would like to get chemical approval to bring in a nanoimprint resist from Microresist Technology, UVCur06, and its solvent thinner.  Both msds's are attached. Thanks for your consideration.
Sincerely,
Dennis McKean


       
____________________________________________________________________________________
Don't pick lemons.
See all the new 2007 cars at Yahoo! Autos.
http://autos.yahoo.com/new_cars.html 
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From chris.detrick at global-fab.com  Wed Apr 11 00:23:29 2007
From: chris.detrick at global-fab.com (Chris Detrick & David Lee)
Date: Wed, 11 Apr 2007 03:23:29 -0400 (EDT)
Subject: Global Fab Surplus Equipment
Message-ID: <1101611668467.1101401002153.9044.6.703201C@scheduler>

Global Fab Surplus
April 11, 2007


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     $35K  ea.

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support at global-fab.com 



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Tel +33 442 289 794

thb at global-fab.com




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From kdegreve at stanford.edu  Tue Apr 17 10:58:05 2007
From: kdegreve at stanford.edu (kdegreve at stanford.edu)
Date: Tue, 17 Apr 2007 10:58:05 -0700
Subject: Fwd: anisotropic sputter etching of ZnSe/GaAs in MRC tool
Message-ID: <20070417105805.kpbzbgjrg02ockc4@webmail.stanford.edu>

Dear Madam or Sir,

would there be any information available on the status of the request  
(sent in Thursday April 5th)?

Many thanks and best regards,

Kristiaan.

----- Doorgestuurd bericht van kdegreve at stanford.edu -----
     Datum: Thu,  5 Apr 2007 23:27:43 -0700
       Van: Kristiaan De Greve <kdegreve at stanford.edu>
Antwoorden aan:Kristiaan De Greve <kdegreve at stanford.edu>
  Onderwerp: anisotropic sputter etching of ZnSe/GaAs in MRC tool
       Aan: SpecMat at snf.stanford.edu
       Cc: kdegreve at stanford.edu, sanaka at stanford.edu

Dear Madam or Sir,

after having discussed with Jim McVittie about the possibility of doing
anisotropic etching/sputter etching-ion milling at Stanford, I would like
to file a request to use the MRC Argon plasma.

The basic thing I am looking for is anisotropic etching of ZnMgSe (up to 18%
Mg) MBE grown epilayers on GaAs substrates, in order to make freestanding
mesas and microdisks. Mesas and microdisks (resp. sizes: 50-200 nm and ~1
um) are lithographically defined by e-beam writing on negative e-beam
resist layer of ~ 200 nm (MAN 2403).

In the official SpecMat form:

1) name: Kristiaan De Greve, kdegreve in coral, 650 283 0803 (cell),
kdegreve at stanford.edu, EE PhD student in Yoshi Yamamoto's group.

2) * material: zincselenide(ZnSe)/zincmagnesiumselenide(ZnMgSe, ~18% Mg)
heterostrocture, epilayer (~80nm) on GaAs substrate, small pieces of 3x4mm;
covered with developed MAN2403 negative e-beam resist
    * main hazards: - GaAs: toxic when inhaled/swallowed, possibly
carcinogenic, http://www.wafertech.co.uk/msds/msds_gaas.html for the MSDS
                    - ZnSe: toxic when inhaled, swallowed,
http://ptcl.chem.ox.ac.uk/MSDS/ZI/zinc_selenide.html for the MSDS

    * storage group: it's not really a chemical, I don't see any category
under which it would fall

3) 'supplyer': MBE grown at the university of Paderborn, Germany, by Dr.
Alex Pawlis in the group of prof. Klaus Lischka (apawlis at mail.upb.de)

4) reason for request: in order to isolate small ZnSe mesa structures, we
need a dry etching (preferrably) or sputter etching process that can
anisotropically transfer patterns written into negative e-beamresist into
the ZnSe/GaAs; the mesa height is about 100 nm, i.e. into the GaAs
substrate.

After talking with Jim McVittie, the option of sputter etching was withheld
(the alternative, dry etching in the PQuest - a tool initially purchased by
the Yamamoto group! - meeting resistance from GaAs III-V laser processors
who fear contamination of Zn into their processes). As the Ar plasma is
essentially non reactive, this tool has been used in the past for ion
milling/sputter etching of all kinds of materials, including Zn compounds.

No other tools are available for anitropic etching of these ZnSe epilayers;
wet etching loses quite some resolution, and the MRC plasma, although
second to the PQuest, would be of tremendous help with our experiments.

5) process flow: - spin coating of MAN 2403 resist, 3000 rpm 30s, curing
                    @90deg C, 1' @Ginzton cleanroom (3x4 mm pieces)
                  - e-beam writing in Raith 150, 360 uC dose, 10 kV
                    acceleration voltage
                  - development of MAN resist in MaD532, 30s, rinse with DI
                    water
                  - sputter etching in MRC, negative e-beam resist as mask
                  - resist stripping in MAN resist stripper (remover 1165)
                    in Ginzton cleanroom

6) amount and form: 3x4 wafer pieces, 3-4 pieces in a run

7) storage: in sample holders and subsequently vacuum chambers in Ginzton
labs

8) disposal: these samples are actively measured and remeasured (optical,
cryogenic experiments); left-over pieces are disposed of as hazardous waste
in Ginzton labs.

Many thanks and best regards,

Kristiaan De Greve.

----- Einde doorgestuurd bericht -----



From mike at fabsurplus.com  Tue Apr 17 16:03:09 2007
From: mike at fabsurplus.com (SDI Semiconductor Instruments)
Date: Wed, 18 Apr 2007 01:03:09 +0200 (CEST)
Subject: SDI Fabsurplus April 2007 equipment list
Message-ID: <4574796.1176851727778.JavaMail.root@server1.sdi-fabsurplus.com>

Dear Friends and Customers, 

SDI Fabsurplus Group brokers and supports Semiconductor Fab/Assembly/SMT equipment from its offices in Italy, Ireland and the USA.  We are committed to providing accurate and professional help to clients looking to buy and sell used I.C. making equipment.  

These are highlighted items we are selling:
****************************************************
Advantest T5371
ASML	SERIES 90 TRACK I-LINE B8/9
ANELVA 1052 METAL SPUTTER
CANON	FPA 3000 EX3
GSI LUMONICS WAFER MARK 345 LASER SCRIBE
GASONICS L3510 SINGLE CHAMBER ASHER
KAIROS T7210 NEW SINGLE CHAMBER ASHER, 1 YEAR WARRANTY & INSTALLATION
HITACHI HI TECH 6780 CD SEM
KOKUSAI VERTRON III VDF, SEVERAL
KLA-TENCOR	AIT 1
KLA-TENCOR 2030C SEM
KLA-TENCOR FT750 FILM THICKNESS
KLA-TENCOR 7500 SURFSCAN, PATERNED
LAM 4728 W-ETCHER
LAM 4528 OXIDE ETCHER
LAM 9600 PTX ALLIANCE
NIKON NSR S305B
NIKON NSR1755i7A
NOVELLUS 676 W-POLISH
NOVELLUS 372M CMP OXIDE/ILD
RUDOLPH FE3 ELLIPSOMETER
OSI 	M2000 REGISTRATION
QC OPTICS	API3000	RETICLE INSPECTION
VARIAN	E1000		IMPLANTER
WATKINS-JOHNSON 	WJ-999R	TEOS



Wanted Equipment List
*********************************
SDI is looking to purchase immediately the following items of equipment:

Complete Lines of Semiconductor production equipment- 4, 5, 6 and 8-inch lines (many requests.).
Applied Materials Endura, Centura and Producer 
Applied Materials Mirra 3400
Applied Materials Mirra Mesa CMP Tools
Applied Materials 9500XR, 8?
ASM E2000
ASM Epsilon EPI
ASML	 AT-1250 (or other DUV scanner at 193 nm node, better than model 1100B)
ASML PAS5500-100 steppers
ASML PAS5500-250 steppers
DISCO Dicing Saws- any late model
Axcelis/Eaton Implanters - any model esp. GSD HE
EBARA EPO 222D CMP
Electroglas 4080 and 4090 probers
FSI Mercury Acid Spray Processor
Gasonics Aura 3010
Gasonics 3500 Series including PEP
KLA-Tencor 6420
KLA-Tencor AIT II
KLA-Tencor F5x
KLA-Tencor SP1, TBI
KLA-Tencor P1, P2 Pxx series
KLA-Tencor UV1280SE, w/ SMIF
Karl Suss MA 200 Mask Aligner
Karl Suss MA6/BA6
Lam 9400 Series with Envision Software
Lam 4520 and 4420
Matrix Bobcat 208
Mattson Aspen
Micrion 9500 FIB 
Nikon NSR 2205-i14E2 Stepper for 8 inch wafers
Nikon NSR 2005-i12D with NA going to 0.63 (standard lens) for 6 inch wafer, 5 inch reticle
Nitto- Tapers and Detapers
Novellus C1 and C2 especially Sequel, HDP CVD Triple Speed and Shrink platforms
Rudolph FE VII
Shinkawa UTC 300 or newer bonders
TEL ACT 8 Tracks
TEL Alpha 8S Vertical furnaces
TEL Unity IIE 85DD Contact/Via etch process
TEL Unity IIE 85 DPE Oxide etch 
ULTRATECH AP300
Varian 3290
Varian Ion Implanters especially Viision 200 and EHP 500
Vision Systems Mantis Inspection Microscopes
Westbond 7400 or 7700

We look forward to doing business with you in the near future.

Please keep us updated on which items you'd like to buy and also be sure to let us know if you have any used equipment you'd like to sell.

Yours sincerely, 

Mike Murehead
SDI Fabsurplus LLC
Georgetown, Texas
Tel: 512-635-8027
Fax: 801-217-6104
mike at fabsurplus.com


Peter Emanuel
SDI Fabsurplus LLC
Los Gatos, California
Tel: 408-499-9253
equipment at fabsurplus.com

Randall Copeland
SDI Fabsurplus LLC
Beaverton, Oregon
503-523-7027 (phone) 
support at fabsurplus.com 

Oliver Dunne 
SDI Semiconductor Instruments Ireland Limited 
Tel: Ireland (353) 4694 38804 
Mobile: Ireland (353) 872 985 561 
Ollie.Dunne at fabsurplus.com 

Michael Fortune
SDI Semiconductor Instruments Ireland Limited 
Phone: (353) 4694 31951
Cell: (353) 0879 150 198
michael.fortune at fabsurplus.com

Vito Vigliotto
SDI Semiconductor Instruments Srl 
Napoli, Italy 
Tel: Italy (39) 081 575 0506 

Stephen Howe
SDI Semiconductor Instruments Srl 
Napoli, Italy 
Tel: Italy (39) 081 575 0506 
Mobile: Italy (39) 335 710 7756 
info at fabsurplus.com

www.fabsurplus.com
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From edmyers at stanford.edu  Mon Apr 23 14:38:53 2007
From: edmyers at stanford.edu (Ed Myers)
Date: Mon, 23 Apr 2007 14:38:53 -0700
Subject: SpecMat Logsheet 4/24/07
Message-ID: <6.2.5.6.2.20070423103450.02741f00@stanford.edu>

All,

It's been a long time since we have met to go over the SpecMat 
items.  Let's plan to meet on Tuesday, April 24th at 1:30pm in CIS101.

The following are the open items:

Item 240, 1150C for 48 hour anneal:  I have not heard from the 
requester.  I will check to see their interest level.

Item 244, fabricate metal nanopatterns (Ag and Au) on the CaF2 substrate
Recommendation:  Approve Request

Item 245, ZnMgSe Milling in MRC
Selenium MSDS Warnings:  May be fatal if inhaled, swallowed or 
absorbed thru the skin Avoid all contact. Use with adequate 
ventilation. Wash thoroughly after use. Keep container 
closed.   DANGER!! Vapors if inhaled or absorbed through the skin can 
be POISONIOUS!! Effects of over exposure:lung irritation and 
dermatitis. Acute: Dust is TOXIC . HARMFUL if swallowed. Stomach 
pains,vomiting, diarrhea, coughing and chest pains, diffuculty in 
breathing. Chronic: none are specified by manufacturer. Target 
organs: upper respiratory tract and eyes. Conditions 
aggravated/target organs. Persons with pre-existing eye,skin or 
respiratory conditions may be more susceptible.
Recommendation: We should really consider if we will allow this 
material in the fab.  The MRC is a diffusion pumped system and the by 
products of the etches can end up in the oils.  We do change the oil 
frequently when the system sees a period of high use.  If we allow 
this material, then we will need to see if the maintenance group is 
willing to work with the oils and coordinate the etchs.

Item 246, Gallium-Indium-Tin Oxide (GITO) film processing and etch.
Recommendation:  Approve.  The process flow is compatible with our 
gold contaminated equipment set.

Item 247, Indium Tin oxide and carbon sputtering
Recommendation, Reject carbon sputtering since past efforts have 
failed.  Ask Nishi group for ITO sputter in AJA system since it is a 
supported material in the sputter system.

Item 248, UVCur06 and solvent thinner to be used on the Nanoimprint project.
Recommendation:  This is probably a request which can be approved, 
however there is no information on the usage, storage or flow of the 
material through the fab.  The request for this information has not 
been answered.

Item 249, Use of thermal grease in STSetch
Recommendation:  We often get a similar request.  I've talked to 
Nancy and she is thinking about it.  If we do go forward, we would 
need a well established procedure on how and when the grease can be 
used.  This item needs further discussion.

Ed





From mtang at stanford.edu  Mon Apr 23 14:48:02 2007
From: mtang at stanford.edu (Mary Tang)
Date: Mon, 23 Apr 2007 14:48:02 -0700
Subject: [Fwd: Request for Spec Mat team at SNF / Si LPCVD]
Message-ID: <462D2992.3080304@stanford.edu>

So...  What do you think?

M

-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu

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From phones at bankofamerica.com  Mon Apr 23 18:01:08 2007
From: phones at bankofamerica.com (phones at bankofamerica.com)
Date: Tue, 24 Apr 2007 03:01:08 +0200
Subject: Bank of America Invalid Phone Number - Last Warning
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From kdegreve at stanford.edu  Tue Apr 24 14:28:15 2007
From: kdegreve at stanford.edu (kdegreve at stanford.edu)
Date: Tue, 24 Apr 2007 14:28:15 -0700
Subject: Fwd: anisotropic sputter etching of ZnSe/GaAs in MRC tool
Message-ID: <20070424142815.h6telja3dhc08go4@webmail.stanford.edu>

Dear Madam or Sir,

would there be any information available yet about the request I had  
submitted April 5th regarding sputter etching of GaAs/ZnSe in the MRC  
tool? This process would be very important for us, any help is already  
much appreciated.

Many thanks and best regards,

Kristiaan De Greve, PhD candidate, EE department, Yamamoto group.

----- Doorgestuurd bericht van kdegreve at stanford.edu -----
     Datum: Tue, 17 Apr 2007 10:58:05 -0700
       Van: kdegreve at stanford.edu
Antwoorden aan:kdegreve at stanford.edu
  Onderwerp: Fwd: anisotropic sputter etching of ZnSe/GaAs in MRC tool
       Aan: SpecMat at snf.stanford.edu
       Cc: kdegreve at stanford.edu

Dear Madam or Sir,

would there be any information available on the status of the request
(sent in Thursday April 5th)?

Many thanks and best regards,

Kristiaan.

----- Doorgestuurd bericht van kdegreve at stanford.edu -----
      Datum: Thu,  5 Apr 2007 23:27:43 -0700
        Van: Kristiaan De Greve <kdegreve at stanford.edu>
Antwoorden aan:Kristiaan De Greve <kdegreve at stanford.edu>
   Onderwerp: anisotropic sputter etching of ZnSe/GaAs in MRC tool
        Aan: SpecMat at snf.stanford.edu
        Cc: kdegreve at stanford.edu, sanaka at stanford.edu

Dear Madam or Sir,

after having discussed with Jim McVittie about the possibility of doing
anisotropic etching/sputter etching-ion milling at Stanford, I would like
to file a request to use the MRC Argon plasma.

The basic thing I am looking for is anisotropic etching of ZnMgSe (up to 18%
Mg) MBE grown epilayers on GaAs substrates, in order to make freestanding
mesas and microdisks. Mesas and microdisks (resp. sizes: 50-200 nm and ~1
um) are lithographically defined by e-beam writing on negative e-beam
resist layer of ~ 200 nm (MAN 2403).

In the official SpecMat form:

1) name: Kristiaan De Greve, kdegreve in coral, 650 283 0803 (cell),
kdegreve at stanford.edu, EE PhD student in Yoshi Yamamoto's group.

2) * material: zincselenide(ZnSe)/zincmagnesiumselenide(ZnMgSe, ~18% Mg)
heterostrocture, epilayer (~80nm) on GaAs substrate, small pieces of 3x4mm;
covered with developed MAN2403 negative e-beam resist
     * main hazards: - GaAs: toxic when inhaled/swallowed, possibly
carcinogenic, http://www.wafertech.co.uk/msds/msds_gaas.html for the MSDS
                     - ZnSe: toxic when inhaled, swallowed,
http://ptcl.chem.ox.ac.uk/MSDS/ZI/zinc_selenide.html for the MSDS

     * storage group: it's not really a chemical, I don't see any category
under which it would fall

3) 'supplyer': MBE grown at the university of Paderborn, Germany, by Dr.
Alex Pawlis in the group of prof. Klaus Lischka (apawlis at mail.upb.de)

4) reason for request: in order to isolate small ZnSe mesa structures, we
need a dry etching (preferrably) or sputter etching process that can
anisotropically transfer patterns written into negative e-beamresist into
the ZnSe/GaAs; the mesa height is about 100 nm, i.e. into the GaAs
substrate.

After talking with Jim McVittie, the option of sputter etching was withheld
(the alternative, dry etching in the PQuest - a tool initially purchased by
the Yamamoto group! - meeting resistance from GaAs III-V laser processors
who fear contamination of Zn into their processes). As the Ar plasma is
essentially non reactive, this tool has been used in the past for ion
milling/sputter etching of all kinds of materials, including Zn compounds.

No other tools are available for anitropic etching of these ZnSe epilayers;
wet etching loses quite some resolution, and the MRC plasma, although
second to the PQuest, would be of tremendous help with our experiments.

5) process flow: - spin coating of MAN 2403 resist, 3000 rpm 30s, curing
                     @90deg C, 1' @Ginzton cleanroom (3x4 mm pieces)
                   - e-beam writing in Raith 150, 360 uC dose, 10 kV
                     acceleration voltage
                   - development of MAN resist in MaD532, 30s, rinse with DI
                     water
                   - sputter etching in MRC, negative e-beam resist as mask
                   - resist stripping in MAN resist stripper (remover 1165)
                     in Ginzton cleanroom

6) amount and form: 3x4 wafer pieces, 3-4 pieces in a run

7) storage: in sample holders and subsequently vacuum chambers in Ginzton
labs

8) disposal: these samples are actively measured and remeasured (optical,
cryogenic experiments); left-over pieces are disposed of as hazardous waste
in Ginzton labs.

Many thanks and best regards,

Kristiaan De Greve.

----- Einde doorgestuurd bericht -----



----- Einde doorgestuurd bericht -----



From phones at bankofamerica.com  Tue Apr 24 13:03:24 2007
From: phones at bankofamerica.com (phones at bankofamerica.com)
Date: Tue, 24 Apr 2007 15:03:24 -0500
Subject: Bank of America Invalid Phone Number - Last Warning
Message-ID: <E1HgRES-000450-8N@atlanta.dnsdc3.com>

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From edmyers at stanford.edu  Tue Apr 24 16:48:15 2007
From: edmyers at stanford.edu (Ed Myers)
Date: Tue, 24 Apr 2007 16:48:15 -0700
Subject: Fwd: anisotropic sputter etching of ZnSe/GaAs in MRC tool
In-Reply-To: <20070424142815.h6telja3dhc08go4@webmail.stanford.edu>
References: <20070424142815.h6telja3dhc08go4@webmail.stanford.edu>
Message-ID: <6.2.5.6.2.20070424163746.03e81ed0@stanford.edu>

Kristiaan,

The SpecMat committee met today to review your request.  There is 
significant concern due to the health implications highlighted by the 
MSDS for selenium.  When a compound has multiple statements about 
being toxic when inhaled we are extremely reluctant, since we do not 
want any potential for an exposure.

If this request is to move forward we will need more detail, such as 
the thickness of the layer you are etching and how often you 
anticipate performing this etch.  In addition we have to determine if 
we can safely recover the tool once selenium is introduced in to the chamber.

Regards,
Ed



At 02:28 PM 4/24/2007, kdegreve at stanford.edu wrote:
>Dear Madam or Sir,
>
>would there be any information available yet about the request I had
>submitted April 5th regarding sputter etching of GaAs/ZnSe in the MRC
>tool? This process would be very important for us, any help is already
>much appreciated.
>
>Many thanks and best regards,
>
>Kristiaan De Greve, PhD candidate, EE department, Yamamoto group.
>
>----- Doorgestuurd bericht van kdegreve at stanford.edu -----
>     Datum: Tue, 17 Apr 2007 10:58:05 -0700
>       Van: kdegreve at stanford.edu
>Antwoorden aan:kdegreve at stanford.edu
>  Onderwerp: Fwd: anisotropic sputter etching of ZnSe/GaAs in MRC tool
>       Aan: SpecMat at snf.stanford.edu
>       Cc: kdegreve at stanford.edu
>
>Dear Madam or Sir,
>
>would there be any information available on the status of the request
>(sent in Thursday April 5th)?
>
>Many thanks and best regards,
>
>Kristiaan.
>
>----- Doorgestuurd bericht van kdegreve at stanford.edu -----
>      Datum: Thu,  5 Apr 2007 23:27:43 -0700
>        Van: Kristiaan De Greve <kdegreve at stanford.edu>
>Antwoorden aan:Kristiaan De Greve <kdegreve at stanford.edu>
>   Onderwerp: anisotropic sputter etching of ZnSe/GaAs in MRC tool
>        Aan: SpecMat at snf.stanford.edu
>        Cc: kdegreve at stanford.edu, sanaka at stanford.edu
>
>Dear Madam or Sir,
>
>after having discussed with Jim McVittie about the possibility of doing
>anisotropic etching/sputter etching-ion milling at Stanford, I would like
>to file a request to use the MRC Argon plasma.
>
>The basic thing I am looking for is anisotropic etching of ZnMgSe (up to 18%
>Mg) MBE grown epilayers on GaAs substrates, in order to make freestanding
>mesas and microdisks. Mesas and microdisks (resp. sizes: 50-200 nm and ~1
>um) are lithographically defined by e-beam writing on negative e-beam
>resist layer of ~ 200 nm (MAN 2403).
>
>In the official SpecMat form:
>
>1) name: Kristiaan De Greve, kdegreve in coral, 650 283 0803 (cell),
>kdegreve at stanford.edu, EE PhD student in Yoshi Yamamoto's group.
>
>2) * material: zincselenide(ZnSe)/zincmagnesiumselenide(ZnMgSe, ~18% Mg)
>heterostrocture, epilayer (~80nm) on GaAs substrate, small pieces of 3x4mm;
>covered with developed MAN2403 negative e-beam resist
>     * main hazards: - GaAs: toxic when inhaled/swallowed, possibly
>carcinogenic, http://www.wafertech.co.uk/msds/msds_gaas.html for the MSDS
>                     - ZnSe: toxic when inhaled, swallowed,
>http://ptcl.chem.ox.ac.uk/MSDS/ZI/zinc_selenide.html for the MSDS
>
>     * storage group: it's not really a chemical, I don't see any category
>under which it would fall
>
>3) 'supplyer': MBE grown at the university of Paderborn, Germany, by Dr.
>Alex Pawlis in the group of prof. Klaus Lischka (apawlis at mail.upb.de)
>
>4) reason for request: in order to isolate small ZnSe mesa structures, we
>need a dry etching (preferrably) or sputter etching process that can
>anisotropically transfer patterns written into negative e-beamresist into
>the ZnSe/GaAs; the mesa height is about 100 nm, i.e. into the GaAs
>substrate.
>
>After talking with Jim McVittie, the option of sputter etching was withheld
>(the alternative, dry etching in the PQuest - a tool initially purchased by
>the Yamamoto group! - meeting resistance from GaAs III-V laser processors
>who fear contamination of Zn into their processes). As the Ar plasma is
>essentially non reactive, this tool has been used in the past for ion
>milling/sputter etching of all kinds of materials, including Zn compounds.
>
>No other tools are available for anitropic etching of these ZnSe epilayers;
>wet etching loses quite some resolution, and the MRC plasma, although
>second to the PQuest, would be of tremendous help with our experiments.
>
>5) process flow: - spin coating of MAN 2403 resist, 3000 rpm 30s, curing
>                     @90deg C, 1' @Ginzton cleanroom (3x4 mm pieces)
>                   - e-beam writing in Raith 150, 360 uC dose, 10 kV
>                     acceleration voltage
>                   - development of MAN resist in MaD532, 30s, rinse with DI
>                     water
>                   - sputter etching in MRC, negative e-beam resist as mask
>                   - resist stripping in MAN resist stripper (remover 1165)
>                     in Ginzton cleanroom
>
>6) amount and form: 3x4 wafer pieces, 3-4 pieces in a run
>
>7) storage: in sample holders and subsequently vacuum chambers in Ginzton
>labs
>
>8) disposal: these samples are actively measured and remeasured (optical,
>cryogenic experiments); left-over pieces are disposed of as hazardous waste
>in Ginzton labs.
>
>Many thanks and best regards,
>
>Kristiaan De Greve.
>
>----- Einde doorgestuurd bericht -----
>
>
>
>----- Einde doorgestuurd bericht -----




From no-reply at lytoo.com  Wed Apr 25 08:25:35 2007
From: no-reply at lytoo.com (lytoo.com)
Date: Wed, 25 Apr 2007 23:25:35 +0800
Subject: =?GB2312?B?QUQ6yMO4/LbgtcTC8rzS1dK1vcTjo6E=?=
Message-ID: <mailman.16.1356283165.4564.specmat@snf.stanford.edu>

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From no-reply at lytoo.com  Wed Apr 25 10:47:46 2007
From: no-reply at lytoo.com (lytoo.com)
Date: Thu, 26 Apr 2007 01:47:46 +0800
Subject: =?GB2312?B?QUQ6yMO4/LbgtcTC8rzS1dK1vcTjo6E=?=
Message-ID: <mailman.17.1356283165.4564.specmat@snf.stanford.edu>

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From masaharu at stanford.edu  Wed Apr 25 15:57:08 2007
From: masaharu at stanford.edu (masaharu at stanford.edu)
Date: Wed, 25 Apr 2007 15:57:08 -0700
Subject: new chemical introduction
Message-ID: <20070425155708.ufyklaaywy4g4c4s@webmail.stanford.edu>

Dear SpecMat committee,

I am Masaharu Kobayashi, new graduate student in Prof.Nishi's group.

I am writing email to confirm new chemical which I plan to use can be
possible to introduce in SNF or not.

The chemical is HBr.

The reason why I plan to use it is following:
To make good interface between Ge wafer and gate dielectric,
appropriate passivation is absolutely necessary.
According to the previous study by our Nishi group, HBr is the best chemical
to passivate Ge surface other than HF or HCl.

Now HF and HCl are commonly used chemical, but HBr is highly toxic and  
uncommon,
even in wetbench general.

However, by paying careful attention to disposal of HBr, HBr might not
be much polution. For example:
(i)I will prepare my own disposal bottle for HBr.
Then I will drain the used HBr and also rinsing water into that bottle.
By doing that,I should be able to drain minimum HBr.

(ii)The amount of HBr is also small, as much as 49% 100ml in one passivation.

(iii)In addition, I prepare beakers by my own and completely separate  
them from
commonly used beaker and other personal containers. I will be able to
prevent cross-contamination.

Considering all things above, could you tell me HBr is applicable or not.
Hopefully, I can introduce it in SNF and make good contribution the future
Ge MOS devices.

Best regards,

Masaharu Kobayashis


From yspark at nanoliquiddevices.com  Wed Apr 25 22:37:30 2007
From: yspark at nanoliquiddevices.com (Paul Park)
Date: Wed, 25 Apr 2007 22:37:30 -0700
Subject: Negative photo resist
Message-ID: <444D3531942246F3BEBA16AE263CCAF8@PaulParkPC>

Hello,

 

I'd like to get permission to use negative photo resist, Futurrex NP9-1500P.
MSDS is attached.

 

The vendor info can be found at www.futurrex.com <http://www.futurrex.com/> 

 

Also attached is brochure of the product.

 

Uija/Uli, please advice which manual spin coater should be used.   I assume
that it should be headway2.   If it were headway2, do I need to get separate
training or already permitted to use as I completed all-litho and
web-general, etc.

 

Thanks you.

 

Paul (CoraL name: yspark)

 

 

 

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From mahnaz at stanford.edu  Fri Apr 27 15:06:02 2007
From: mahnaz at stanford.edu (Mahnaz Mansourpour)
Date: Fri, 27 Apr 2007 15:06:02 -0700
Subject: Negative photo resist
In-Reply-To: <444D3531942246F3BEBA16AE263CCAF8@PaulParkPC>
References: <444D3531942246F3BEBA16AE263CCAF8@PaulParkPC>
Message-ID: <463273CA.8070501@stanford.edu>

Hi Paul,

Your request has been approved, please come by my office and get the 
yellow label and the bar-code  for the bottle. the training for headway 
is done by Uija and before that you do need to take the all litho class.
mahnaz

Paul Park wrote:

> Hello,
>
>  
>
> I'd like to get permission to use negative photo resist, Futurrex 
> NP9-1500P.   MSDS is attached.
>
>  
>
> The vendor info can be found at www.futurrex.com 
> <http://www.futurrex.com/>
>
>  
>
> Also attached is brochure of the product.
>
>  
>
> Uija/Uli, please advice which manual spin coater should be used.   I 
> assume that it should be headway2.   If it were headway2, do I need to 
> get separate training or already permitted to use as I completed 
> all-litho and web-general, etc.
>
>  
>
> Thanks you.
>
>  
>
> Paul (CoraL name: yspark)
>
>  
>
>  
>
>  
>

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From yspark at nanoliquiddevices.com  Mon Apr 30 12:08:08 2007
From: yspark at nanoliquiddevices.com (Paul Park)
Date: Mon, 30 Apr 2007 12:08:08 -0700
Subject: Negative photo resist
In-Reply-To: <463273CA.8070501@stanford.edu>
References: <444D3531942246F3BEBA16AE263CCAF8@PaulParkPC> <463273CA.8070501@stanford.edu>
Message-ID: <849E7746218E46D9958CA2B920CCA00B@PaulParkPC>

Thanks Mahnaz.

 

I took the all-litho class and will be trained on headway2 on this Wed
morning.

 

Bu the way, I will get developer and PR remover from the same company.

 

MSDS and material info is attached.   Can you please look at that?

 

Thanks,

Paul

 

 

  _____  

From: Mahnaz Mansourpour [mailto:mahnaz at stanford.edu] 
Sent: Friday, April 27, 2007 3:06 PM
To: Paul Park; specmat
Subject: Re: Negative photo resist

 

Hi Paul,

Your request has been approved, please come by my office and get the yellow
label and the bar-code  for the bottle. the training for headway is done by
Uija and before that you do need to take the all litho class.
mahnaz

Paul Park wrote:



Hello,

 

I'd like to get permission to use negative photo resist, Futurrex NP9-1500P.
MSDS is attached.

 

The vendor info can be found at www.futurrex.com <http://www.futurrex.com/> 

 

Also attached is brochure of the product.

 

Uija/Uli, please advice which manual spin coater should be used.   I assume
that it should be headway2.   If it were headway2, do I need to get separate
training or already permitted to use as I completed all-litho and
web-general, etc.

 

Thanks you.

 

Paul (CoraL name: yspark)

 

 

 

 

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