GaN as a clean material?

Jim McVittie mcvittie at cis.Stanford.EDU
Wed Aug 1 16:42:48 PDT 2007


We should talk to some of the Harris students. I am sure they have
experience working with GaN. I expect it will behave similar to sapphire.
In the STS etcher the issue will be the sputter etch rate when the plasma
contacts directly contacts it. I expect sputter rate to be pretty low. In
epi the issue is how much does it discompose in H2 at the epi temperature.


On Wed, 1 Aug 2007, Mary Tang wrote:

> Hi all --
> Three engineers from Alpha & Omega Semiconductor would like to join the 
> lab.  They would like to use silicon substrates with a thin layer (3-5 
> microns) of GaN in clean tools in the lab (stsetch and epi).  I believe 
> they plan to get these substrates from Honeywell.  What do you all think?
> Mary

Jim McVittie, Ph.D.    			Senior Research Scientist 
Allen Center for Integrated Systems     Electrical Engineering
Stanford University             	jmcvittie at
Rm. 336, 330 Serra Mall			Fax: (650) 723-4659
Stanford, CA 94305-4075			Tel: (650) 725-3640

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