GaN as a clean material?

[Jim McVittie]

Mary,

We should talk to some of the Harris students. I am sure they have
experience working with GaN. I expect it will behave similar to sapphire.
In the STS etcher the issue will be the sputter etch rate when the plasma
contacts directly contacts it. I expect sputter rate to be pretty low. In
epi the issue is how much does it discompose in H2 at the epi temperature.


	Jim 


On Wed, 1 Aug 2007, Mary Tang wrote:

> Hi all --
> 
> Three engineers from Alpha & Omega Semiconductor would like to join the 
> lab.  They would like to use silicon substrates with a thin layer (3-5 
> microns) of GaN in clean tools in the lab (stsetch and epi).  I believe 
> they plan to get these substrates from Honeywell.  What do you all think?
> 
> Mary
> 
> 

-- 
--------------------------------------------------------------
Jim McVittie, Ph.D.    			Senior Research Scientist 
Allen Center for Integrated Systems     Electrical Engineering
Stanford University             	jmcvittie at stanford.edu
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