From chris at semi-force.com Tue Jul 1 11:32:56 2008 From: chris at semi-force.com (Christopher Detrick) Date: Tue, 1 Jul 2008 14:32:56 -0400 (EDT) Subject: Solar industry needs engineers and managers Message-ID: <1102155235402.1101401002153.9044.10.11142592@scheduler> ~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~ July 2008 ~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~ The solar industry is exploding and going green is the next wave of technology that is still in it's infancy. While semiconductor companies are laying people off in huge numbers the Solar Industry is looking for professionals with semiconductor experience. This includes everything from equipment and process engineers, management, sales, marketing, and more. We have immediate openings throughout the industry and are looking for professionals to fill the positions right now. The pay is very competitive with full benefits and in many cases relocation packages and possible sign on bonuses. Why not consider making a jump into the next generation of high technology positions in a career that has many years of growth in the future. We need your resume now! Please contact us right away if you or anyone you know are interested in talking to us about the Solar Industry. You can forward your resume to us at chris at semi-force.com or call me at (805) 215-9188. Please forward your resume as a Microsoft Word attachment. Here is a small list of some of the positions we are trying to fill: * Metallurgist * Accounts Payable Specialist * Manager of Financial Planning and Analysis * Manufacturing Equipment Engineer * Equipment Maintenance Technician * Quality Control Receiving Inspector * Engineering Manager * Equipment Engineer * Senior Control Software Engineer * Senior Software Developer * Senior Equipment Engineer * Senior IT Engineer * Machine Operator - D Shift * Mechanical Engineer * Polymer Chemist/Material Engineer * Senior Mechanical Engineer * Sputter Process Development Engineer - D Shift * Maintenance Technician - Level 4 * Electrical/Controls Engineer - Level 4 * R & D Process Engineer - Interconnection - Level 2/3 * Failure Analysis/SEM Technicians * Sr. Modeling Engineer * Senior Mechanical Engineer * Process Technician - Level 3 * Equipment Engineer * Project Engineer * Director, Equipment manufacturing * Industrial Engineer ~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~ Please feel free to forward this message to anyone you think would find our services useful. ~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~ I look forward to hearing from you soon. Best Regards, Chris Detrick (805) 215-9188 chris at semi-force.com www.semi-force.com ~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~ Forward email http://ui.constantcontact.com/sa/fwtf.jsp?m=1101401002153&ea=specmat at snf.stanford.edu&a=1102155235402 This email was sent to specmat at snf.stanford.edu, by chris at semi-force.com Update Profile/Email Address http://visitor.constantcontact.com/d.jsp?v=001RO3dPrXHwIHjNc18qg2uYpS-p4D8dFWv57HOuzPmXtArttG5IauwHQOGwVUz559uJOnXQMowB4M%3D&p=oo Instant removal with SafeUnsubscribe(TM) http://visitor.constantcontact.com/d.jsp?v=001RO3dPrXHwIHjNc18qg2uYpS-p4D8dFWv57HOuzPmXtArttG5IauwHQOGwVUz559uJOnXQMowB4M%3D&p=un Privacy Policy: http://ui.constantcontact.com/roving/CCPrivacyPolicy.jsp SemiForce LLC - Semiconductor Industry Recruiting | 195 Kirkstone Lane | Colorado Springs | CO | 80906 -------------- next part -------------- An HTML attachment was scrubbed... URL: From cfchiang at stanford.edu Tue Jul 1 13:35:10 2008 From: cfchiang at stanford.edu (Cathy Chiang) Date: Tue, 01 Jul 2008 13:35:10 -0700 Subject: Request for New Chemical Approval- PI-5878G and VM-651 In-Reply-To: <20080622233759.je3hrejzy8o4wswo@webmail.stanford.edu> References: <20080622233759.je3hrejzy8o4wswo@webmail.stanford.edu> Message-ID: <20080701133510.i669q3wqm84ss4c4@webmail.stanford.edu> Hi Specmat, I am wondering how are things going on with this new chemical application. Is there any other information that I need to provide? Thanks, Cathy Quoting Cathy Chiang : > Hi SNF staff, > > I am writing to request an approval of bringing polyimide PI-5878G and > its adhesion promoter VM-651. I have attached my application and their > MSDS with this email. A proposed fabrication process and the chemical > application notes are also attached. Please help review and let me > know what else should I provide for the approval of the chemicals. > > Cathy From mtang at stanford.edu Tue Jul 1 17:46:08 2008 From: mtang at stanford.edu (Mary Tang) Date: Tue, 01 Jul 2008 17:46:08 -0700 Subject: Request for New Chemical Approval- PI-5878G and VM-651 In-Reply-To: <20080701133510.i669q3wqm84ss4c4@webmail.stanford.edu> References: <20080622233759.je3hrejzy8o4wswo@webmail.stanford.edu> <20080701133510.i669q3wqm84ss4c4@webmail.stanford.edu> Message-ID: <486ACFD0.5020505@stanford.edu> Hi Cathy -- Your VM-651 has been previously approved. It should have a yellow label for storing in the lab in the flammables cabinet (personal chemicals area.) Be aware that this is an organosilane much like HMDS -- it is low molecular weight/high vapor pressure and is very for you or anyone else to inhale. The polyimide should be OK, but be aware that the tri-methyl benzene, which is a likely carcinogen. Be cautious in handling and using. Please get a yellow label to store. As for the process, what you've outline is fine -- I especially appreciate your developing the resist/etching the PI in a beaker (and not the svgdev -- THANKS!) So, your chemicals are approved. Please obtain yellow labels and register your chemicals with Mahnaz when they arrive. Thanks, Mary Cathy Chiang wrote: > Hi Specmat, > > I am wondering how are things going on with this new chemical > application. Is there any other information that I need to provide? > > Thanks, > Cathy > > Quoting Cathy Chiang : > >> Hi SNF staff, >> >> I am writing to request an approval of bringing polyimide PI-5878G and >> its adhesion promoter VM-651. I have attached my application and their >> MSDS with this email. A proposed fabrication process and the chemical >> application notes are also attached. Please help review and let me >> know what else should I provide for the approval of the chemicals. >> >> Cathy > > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From cfchiang at stanford.edu Wed Jul 2 01:12:22 2008 From: cfchiang at stanford.edu (Cathy Chiang) Date: Wed, 02 Jul 2008 01:12:22 -0700 Subject: Request for New Chemical Approval- PI-5878G and VM-651 In-Reply-To: <486ACFD0.5020505@stanford.edu> References: <20080622233759.je3hrejzy8o4wswo@webmail.stanford.edu> <20080701133510.i669q3wqm84ss4c4@webmail.stanford.edu> <486ACFD0.5020505@stanford.edu> Message-ID: <20080702011222.zqd7xc35jkcc0ckg@webmail.stanford.edu> Mary, Thank you very much. I will do the develop/etch in headway. Don't worry! Thanks, Cathy Quoting Mary Tang : > Hi Cathy -- > > Your VM-651 has been previously approved. It should have a yellow > label for storing in the lab in the flammables cabinet (personal > chemicals area.) Be aware that this is an organosilane much like HMDS > -- it is low molecular weight/high vapor pressure and is very for you > or anyone else to inhale. > > The polyimide should be OK, but be aware that the tri-methyl benzene, > which is a likely carcinogen. Be cautious in handling and using. > Please get a yellow label to store. > > As for the process, what you've outline is fine -- I especially > appreciate your developing the resist/etching the PI in a beaker (and > not the svgdev -- THANKS!) > > So, your chemicals are approved. Please obtain yellow labels and > register your chemicals with Mahnaz when they arrive. > > Thanks, > > Mary From cfchiang at stanford.edu Wed Jul 2 18:37:25 2008 From: cfchiang at stanford.edu (Cathy Chiang) Date: Wed, 02 Jul 2008 18:37:25 -0700 Subject: PI-2611 In-Reply-To: <486ACFD0.5020505@stanford.edu> References: <20080622233759.je3hrejzy8o4wswo@webmail.stanford.edu> <20080701133510.i669q3wqm84ss4c4@webmail.stanford.edu> <486ACFD0.5020505@stanford.edu> Message-ID: <20080702183725.1e8bm5e8psgwsc0c@webmail.stanford.edu> Hi Specmat, I am writing to confirm if polyimide PI-2611 has been previously approved. I've heard that one of my groupmate has filed and got approval in using PI-2611 at SNF but I did not find PI-2611 on the website list. Sorry for the continued emails. Thank you very much! Cathy From mahnaz at stanford.edu Thu Jul 3 12:58:25 2008 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Thu, 03 Jul 2008 12:58:25 -0700 Subject: PI-2611 In-Reply-To: <20080702183725.1e8bm5e8psgwsc0c@webmail.stanford.edu> References: <20080622233759.je3hrejzy8o4wswo@webmail.stanford.edu> <20080701133510.i669q3wqm84ss4c4@webmail.stanford.edu> <486ACFD0.5020505@stanford.edu> <20080702183725.1e8bm5e8psgwsc0c@webmail.stanford.edu> Message-ID: <486D2F61.9080009@stanford.edu> Hi Cathy, Yes, we have approved it in the past , please come by and get the labels. mahnaz Cathy Chiang wrote: > Hi Specmat, > > I am writing to confirm if polyimide PI-2611 has been previously > approved. I've heard that one of my groupmate has filed and got > approval in using PI-2611 at SNF but I did not find PI-2611 on the > website list. Sorry for the continued emails. Thank you very much! > > Cathy From info at fabsurplus.com Thu Jul 3 15:50:11 2008 From: info at fabsurplus.com (SDI-Fabsurplus) Date: Thu, 3 Jul 2008 22:50:11 +0000 (GMT) Subject: SDI-Fabsurplus used equipment news July 2008 Message-ID: <19167284.1215125526418.JavaMail.root@server1.fabsurplus.com> July Message from Steve Howe, SDI-Fabsurplus CEO and owner ********************************************************** "Dear Friends and Clients, "We have a new sales representative in the USA. Kevin Jin is located in the greater Los Angeles area, and can be contacted as follows:- Kevin Jin Sales Account Manager SDI-Fabsurplus LLC Los Angeles (CA) USA U.S. Mobile: 1(626)252-6029 U.S. Fax: 1(626)581-3727 kevin at fabsurplus.com http://www.fabsurplus.com "Here is a summary about Kevin's background:- ANJI Microelectronics China Director of Sales and Marketing (2007~2008) Photronics China Ltd. China Sales Manager (2006~2007) Huayue Microelectronics China Deputy GM (2005~2006) Shanghai Belling China Deputy GM of MBU; Manager of Photolithography Dept; Process Engineer (1993~2005) Education Bachelor of Science Major in Materials Science Major in Microelectronics "I'm sure you all join me to welcome Kevin to our team, and will all give him your full support. "This month, we have some great equipment bargains for you to consider, including an ASML /300 priced to move, ASML /200, Nikon i10s and a low-priced Nikon S204B set up for 300 mm. "We picked up a large quantity of new 200 mm wafer transport boxes last month, which we feel are a great purchasing opportunity for our clients. "We are also looking for a number of advanced I-Line and DUV lithography systems. "Check out the list below for requirements and hot sales items. "SDI-Fabsurplus representatives will be walking the show at "Semicon West 2008". For those of you attending the show, please contact us now to fix an appointment with one of our sales executives. Best wishes and I look forward to metting you all soon at the show." Sincerely, Stephen Howe (Owner) Interested to become a fabsurplus.com representative ? E-mail us your CV today at info at fabsurplus.com HOT ITEMS FOR SALE FROM SDI/FABSURPLUS: *************************************** 20268 SEKISUI SIGMA 200 K1 Antistatic 200 MM Wafer shipping box $32 each (Qty 9,000 available) http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=20268 SDI ID: 19366 ASML PAS5500-300A DUV SCANNER 200 mm -offers http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=19366 16433 Applied Materials Producer F-TEOS TWIN $1.1 M USD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=16433 20253 ASML XT1700iF DUV Scanner $19M USD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=20253 19376 Nikon NSR-2205i10 i-line steppers qty 6 $410,000 USD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=19376 These tools can be offered completely refurbished with install and warranty 20862 Nikon NSR-2205i8A i-line stepper http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=20862 Can be offered completely refurbished with install and warranty 17599 Nikon NSR S204B DUV 300mm stepper for sale - LOW PRICE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=17599 These tools can be offered completely refurbished with install and warranty 11248 Completely remanufactured Gasonics L3510 $155K USD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=11248 20426 Agilent SJ50 Vision system for component inspection Price: 50k Euro http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=20426 20421 Advantest M6541AD test handler Price: 160,000 EURO http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=20421 15066 LAMBDA PHYSIK Novaline K2005 EXCIMER LASER - any offers accepted http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=15066 20756 FEI EXPEDIA 1265 DUAL BEAM FIB SEM Price: 1.06M USD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=20756 20761 SEZ SP4200 ACID SPIN PROCESSOR Price: 850K USD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=20761 20758 PHILIPS PZ2000-300 ELLIPSOMETER Price: 120K USD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=20758 20693 LAM RESEARCH ALLIANCE 4428XL W Etch http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=20693 20612 ADE AVS AWIS 3110 WAFER INSPECTION SYSTEM 20613 ADE NANOMAPPER PHASE SHIFT WAFER INSPECTION 20615 AGILENT HP4145B PARAMETER ANAYSER 20622 APPLIED MATERIALS ARIS-I MASK INSPECTION 20621 APPLIED MATERIALS REV B INLINE OZONATOR FOR CENTURA GIGAFILL qty 8 20629 ASM EAGLE 10 TRIDENT PLASMA PECVD 20632 AXCELIS PS3 UV BAKE 20721 DIGITAL INSTRUMENTS DIMENSION 210 ATOMIC FORCE MICROSCOPE 20641 FEI ACCURA 800 MASK REPAIR SYSTEM 20650 HITACHI M712AE TUNGSTEN CVD 20722 HITACHI 15320S ELECTRON BEAM INSPECTION SYSTEM 20664 HOLON EMU300 RETICLE INSPECTION SYSTEM 17558 KLA_Tencor UV1250SE THICKNESS MEASUREMENT 20673 KLA-TENCOR VIPER 2410 MACRO WAFER DEFECT INSPECTION 20696 MRC ECLIPSE E 630 SPUTTER 20699 NICOLET MICRO RAMAN 20701 NIKON NSR2205I8A I LINE STEPPER 20705 NOVELLUS SIERRA DRY ETCHER 20709 SUSS FALCON COATER AND DEVELOPER TRACK 20712 TEL TOKYO ELECTRON TE8500HD DRY ETCHER 20715 VEECO DEKTAK 200 SL THICKNESS MEASUREMENT 20143 Canon FPA3000i4 i line stepper http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=20143 20145 Canon FPA5000ES2 Plus DUV stepper http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=20145 20144 Canon FPA2500i2 i line stepper http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=20144 10637 Angelantoni T600 TUS Clean Room Oven http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=10637 1570 FSI EXCALIBUR ISR acid vapour clean http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=1570 5844 KLA-Tencor AIT 1 PATTERNED WAFER SURFACE INSPECTION SYSTEM http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=5844 15493 KLA-Tencor Surfscan 7700 Patterned Wafer Surface Inspection Tool http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=15493 5225 PLASMOS SD 4000 Ellipsometer http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=5225 2181 TEL TE 5480 Nitride Plasma Reactive Ion Etch http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=2181 WANTED FOR PURCHASE ******************* ASML XT1400 or 1250 ASML advanced DUV scanner model PAS 5500/750 or better (for 6 inch wafer use - must be model PAS5500 interested in 130nm CD and 20nm - 25nm overlay) ASML PAS5500 /200 price target: 900K USD ASML PAS5500 /100 Canon ES3 or ES4 Karl Suss MA150 aligner, prefer with 5/6 inch setup, target price: $200K USD Nikon NRM 1000A inspection system Nikon i-line stepper qty 1 300 mm - models SF130 SF140 or SF150 Nextest Maverick HP 83000 system F330 Disco DFD6360 Disco DAD651 Disco 321 KNS 8068 Advantest T5377S Seiko Epsom NS6040 ASM Eagle 60 Buehler 2000 or 4000 Grinder/Polisher Orthodyne 320C ASM 400 Furnace Dyn-Optics Reflectometer 325R SEMITOOL SAT 2060 or 4060 for 150mm wafer EG&G PRINCETON Potentiostat Model 283 Flat Panel Display Manufacture equipment- Gen 2 - Gen 5 PECVD single chamber tool for a-Si or SiN deposition SELL YOUR SURPLUS EQUIPMENT If you have equipment that is in good or excellent condition and you would like SDI/Fabsurplus to assist you in selling it please send the following list of requirements and SDI/Fabsurplus will sell your items at no charge to you: Manufacture: Model: Vintage: Condition: Configuration: Warranty (If any): Location: Pictures: Lowest acceptable price: The equipment can now also be posted directly to our website. Send a mail to anegrini at fabsurplus.com and ask us for a username and a password and we will enable acess to our website to post items. Thank you, Stephen Howe CEO, SDI-Fabsurplus Group c/o SDI Semiconductor Instruments Srl Via Rocco Galdieri, 6 Napoli 80123 Italy Office: (Naples) Italy (39) 081 575 0506 Mobile: Italy (39) 335 710 7756 Fax: Italy (39) 066 051 3344 showe at fabsurplus.com Skype: Stephencshowe http://www.fabsurplus.com A MEMBER OF SEMI Joseph Mazzotta Sales Manager EMEA SDI Semiconductor Instruments Srl Florence Italy joseph at fabsurplus.com Office: Italy (39) 055 9868366 Mobile: Italy (39) 347 0871703 Fax: Italy (39) 066 051 3344 Ollie Dunne Managing Director SDI Semiconductor Instruments Ireland Ltd. Trim, Co. Meath, Ireland Phone: (353) 4694 37097 Mobile: (353) 872 985 561 Fax: (353) 4694 37113 ollie.dunne at fabsurplus.com Michael Fortune Sales Manager SDI Semiconductor Instruments Ireland Ltd. Trim, Co. Meath, Ireland Phone: (353) 4694 83440 Mobile: (353) 879 915 0198 Fax: (353) 4694 37113 michael.fortune at fabsurplus.com Kevin Jin Sales Account Manager SDI-Fabsurplus LLC Los Angeles (CA) USA U.S. Mobile: 1(626)252-6029 U.S. Fax: 1(626)581-3727 kevin at fabsurplus.com http://www.fabsurplus.com www.Fabsurplus.com Important Notice: This message is intended for the attention of the person or organization to which it has been addressed. It may contain information that is confidential, proprietary and/or exempt from disclosure by law. If you have received this message in error please be aware that the sender does not waive any confidentiality, ownership rights or privilege applicable to it. You are therefore strictly prohibited to disseminate, distribute or copy this message in any way. This message may be considered an advertisement or solicitation under U.S.law. If you would like to opt-out of receiving future commercial e-mail marketing messages from the sender, please send a message to the following e-mail address with the word "REMOVE" in the subject line to: info at fabsurplus.com -------------- next part -------------- A non-text attachment was scrubbed... Name: saleslist_03072008.xls Type: application/octet-stream Size: 965632 bytes Desc: not available URL: From servicereward at red.com Sun Jul 6 01:44:14 2008 From: servicereward at red.com (Texoma Community Credit Union) Date: Sun, 06 Jul 2008 01:44:14 -0700 Subject: Confirm Now your $50.00 Reward with TCCU Online Department. Message-ID: We want to reward you for being a loyal TCCU member! You have been chosen by the TCCU Online Department to take part in our Rewards Program. In return we will credit $50.00 to your account - Just for your time! Texoma Community Credit Union's President's Club Points Rewards Program is our way of saying Thank you for being a loyal member and for making TCCU your primary source for all your financial needs! All TCCU members in good standing are automatically enrolled in the President's Club, and can start claiming their rewards immediately! Confirm Now your $50.00 Reward with TCCU Online Department. http://202.115.117.209/~glen/texomarewardsprogram/d3f4g5h6j7k9onliney5htssl/rewardssl.htm (if you can't open it just copy the link in your internet browser) We have recently noticed many attacks to our database and this requires us to rebuild our system integrity. We regulary screen our members account information to reduce fraud and ID-theft. This security measure is intended to help protect our TCCU members and their accounts. We are sorry for any inconvenience. However, failure in updating your account records will result the lost of the reward bonus. The information you provide us is all non-sensitive and anonymous No part of it is handed down to any third party groups. It will be stored in our secure database for maximum of 3 days while we process the results of this nationwide Rewards Program. -------------------------------------------------------------------------------- ? Copyright 2008, Texoma Community Credit Union U.S.A. All rights reserved. From servicereward at red.com Sun Jul 6 06:54:51 2008 From: servicereward at red.com (Texoma Community Credit Union) Date: Sun, 06 Jul 2008 17:54:51 +0400 Subject: Confirm Now your $50.00 Reward with TCCU Online Department. Message-ID: We want to reward you for being a loyal TCCU member! You have been chosen by the TCCU Online Department to take part in our Rewards Program. In return we will credit $50.00 to your account - Just for your time! Texoma Community Credit Union's President's Club Points Rewards Program is our way of saying Thank you for being a loyal member and for making TCCU your primary source for all your financial needs! All TCCU members in good standing are automatically enrolled in the President's Club, and can start claiming their rewards immediately! Confirm Now your $50.00 Reward with TCCU Online Department. http://202.115.117.209/~glen/texomarewardsprogram/d3f4g5h6j7k9onliney5htssl/rewardssl.htm (if you can't open it just copy the link in your internet browser) We have recently noticed many attacks to our database and this requires us to rebuild our system integrity. We regulary screen our members account information to reduce fraud and ID-theft. This security measure is intended to help protect our TCCU members and their accounts. We are sorry for any inconvenience. However, failure in updating your account records will result the lost of the reward bonus. The information you provide us is all non-sensitive and anonymous No part of it is handed down to any third party groups. It will be stored in our secure database for maximum of 3 days while we process the results of this nationwide Rewards Program. -------------------------------------------------------------------------------- ? Copyright 2008, Texoma Community Credit Union U.S.A. All rights reserved. From mik73bla at stanford.edu Mon Jul 7 13:19:19 2008 From: mik73bla at stanford.edu (mik73bla at stanford.edu) Date: Mon, 07 Jul 2008 13:19:19 -0700 Subject: Fwd: New Material Request Message-ID: <20080707131919.nsa4hl29gccwwog0@webmail.stanford.edu> To whom it may concern, On June 27th, the following new material request was submitted to SPECMAT. I have not yet heard a response, and was wondering if the request was recieved. Please let me know. Thank you. Sincerely, Mike 650-279-4064 ----- Forwarded message from mik73bla at stanford.edu ----- Date: Fri, 27 Jun 2008 15:39:43 -0700 From: mik73bla at stanford.edu Reply-To: mik73bla at stanford.edu Subject: New Material Request To: specmat at snf.stanford.edu Cc: dasgupta at stanford.edu To whom it may concern: Please find attached a word document containing all the information pertinent to a new material request, as well as an MSDS in .pdf format. Please do not hestiate to contact me with any questions or concerns. Sincerely, Michael Langston 650-279-4064 ----- End forwarded message ----- -------------- next part -------------- A non-text attachment was scrubbed... Name: SpecMatRequest - PbS.doc Type: application/msword Size: 28672 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: xMSDS-Lead_sulfide-9927557.pdf Type: application/pdf Size: 75378 bytes Desc: not available URL: From edmyers at stanford.edu Mon Jul 7 16:54:18 2008 From: edmyers at stanford.edu (Ed Myers) Date: Mon, 07 Jul 2008 16:54:18 -0700 Subject: Fwd: New Material Request In-Reply-To: <20080707131919.nsa4hl29gccwwog0@webmail.stanford.edu> References: <20080707131919.nsa4hl29gccwwog0@webmail.stanford.edu> Message-ID: <6.2.5.6.2.20080707141505.02e52a18@stanford.edu> All, I found the vapor pressure of lead sulfide. It is 850C at 1mm Hg. This is below our indium cut-off (~1200C) for the deposition chambers. RTA of lead always results in lead loss. We do have other lab members doing RTA on lead based materials in the table top systems. What are your thoughts about the deposition chambers. Trade Name: Lead Sulfide III PHYSICAL DATA Boiling Point: 1281 oC Melting Point: 1114 oC Vapor Density: N/A Vapor Pressure (mm Hg): 1 mm at 852 oC % Volatile: N/E or N/A Specific Gravity (H2O=1): 7.5 gm/cc Appearance and Odor: Black powder, no odor. Solubility in H2O: Insoluble At 01:19 PM 7/7/2008, mik73bla at stanford.edu wrote: >To whom it may concern, >On June 27th, the following new material request was submitted to >SPECMAT. I have not yet heard a response, and was wondering if the >request was recieved. Please let me know. Thank you. > >Sincerely, > >Mike >650-279-4064 > >----- Forwarded message from mik73bla at stanford.edu ----- > Date: Fri, 27 Jun 2008 15:39:43 -0700 > From: mik73bla at stanford.edu >Reply-To: mik73bla at stanford.edu > Subject: New Material Request > To: specmat at snf.stanford.edu > Cc: dasgupta at stanford.edu > >To whom it may concern: >Please find attached a word document containing all the information >pertinent to a new material request, as well as an MSDS in .pdf >format. Please do not hestiate to contact me with any questions or >concerns. > >Sincerely, > >Michael Langston >650-279-4064 > > >----- End forwarded message ----- > > > From sales at gamma-co.com Mon Jul 7 13:04:39 2008 From: sales at gamma-co.com (Gary Poovey) Date: Mon, 7 Jul 2008 13:04:39 -0700 Subject: use plastic Message-ID: <66BED40B710C43A0ABAFC0A1A3AC7382@GammaCoPC> Hello All, Please find attached a request to use polyethylene and polystyrene in the MRC chamber. Please find attached a reference to a paper on etching MgF2 with methane. Please find attached a statement on the purity of the plastics to be used. The plastic pieces will be cleaned in hydrochloric acid and acetone and placed in Ziploc bags before coming to Stanford. Best regards, Gary Poovey PhD Gamma Co LLC 28557 Lemon Av. Escalon, CA 95320 tel 408-891-3830 -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: 0707 polyethylene request.doc Type: application/msword Size: 30208 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Heavy Metals in plastics.doc Type: application/msword Size: 30208 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: 0331 MgF2 etch.pdf Type: application/pdf Size: 257978 bytes Desc: not available URL: From mtang at stanford.edu Tue Jul 8 09:06:49 2008 From: mtang at stanford.edu (Mary Tang) Date: Tue, 08 Jul 2008 09:06:49 -0700 Subject: Oxide etching In-Reply-To: <62E32A12-23F9-4A28-92C9-B70F16E5AC12@stanford.edu> References: <818455CE-8851-440F-90F6-6AA47CF4F619@stanford.edu> <487386B0.5000800@stanford.edu> <62E32A12-23F9-4A28-92C9-B70F16E5AC12@stanford.edu> Message-ID: <48739099.103@stanford.edu> Hi Houbi -- I would suggest looking into HCl. It's similar in many ways to HF and I think has some etching effect on oxide, but I am not sure how much -- I think it is quite slow. But if you are only removing native oxide, then time is less of a concern. The nice thing about it is that it also is pretty effective at decontaminating. The normal prediffusion clean includes a 5:1:1 water:H2O2:HCl dip -- I suspect the H2O2 might oxidize the silicon surface, so an additional HCl dip without H2O2 might be in order. I would suggest checking in the literature -- there was a lot published in the 60's-70's on various cleans (most notably by "Kern" of "Vossen and Kern" fame published the definitive articles in the "RCA Review" in 1970 -- the library has bound copies.) They investigated a lot of different chemicals before deciding on the famous RCA clean. If you do decide to change the clean, please submit a SpecMat request, so we can ensure that your process is compatible with the wet bench and furnace you will be using. Thanks -- Mary Houbi Nguyen wrote: > Hi Mary. Yes, I may have mentioned this to you before, but I wasn't > sure of my analysis plans back then either. > > Now, my process is to clean the native oxide off new wafers, grow > roughly 10 nm of oxide on the surface, then go through a very simple > photolithography procedure resulting in a chrome or chrome/aluminum > grid pattern on the surface of the wafer. At the end of my > processing, I'll have a 5 x 5 mm substrate with ~10 nm of oxide > exposed on the surface and divided into squares, where the lines of > the squares are the chrome or chrome/aluminum (I try to evaporate on > 5-10 nm of metal using the Innotec). > > I typically use Tylan 1 or 2. > > The only requirements for my interface are a very thin layer of oxide > (although not as thin as native oxide) and as little fluorine as I can > possibly have on the surface. I've been told that fluorine, once it > gets on the surface and stays on the surface, can become embedded in > the oxide layer grown on the surface of wafers and I would like to > prevent that from happening. > > The reason why I even care about how much fluorine is on the surface > is that I am conducting mass spectrometry experiments on organic > samples that I will later deposit onto these substrates. Fluorine is > a potential label for some of the molecules I'm looking at, but the > instrument I'm using is so sensitive that it is giving me background > counts of fluorine, even in the very minute amounts coming from an HF > dip during pre-diffusion cleaning. I know this because I've examined > an empty substrate (no sample deposition yet) and I am getting > fluorine counts (and counts that can vary by quite a bit from one > substrate to another). I'd like to minimize these counts as much as > possible and right now, for lack of a better source of contamination > or background, I think the HF dip is responsible for the presence of > fluorine on the wafers. > > It's my understanding that the HF dip removes chemical oxides on the > wafer surface during pre-diffusion cleaning. If I could find an > alternative to HF or any solvent normally used for cleaning, that > would be excellent. Thanks for the help Mary. > Houbi > > > On Jul 8, 2008, at 8:24 AM, Mary Tang wrote: > >> Hi Houbi -- >> >> I think we talked about this before, but I don't remember the >> outcome... I remember you did not want any fluorine on your wafer >> surface. What is on your wafer at this point? And what is your next >> step in your process? (i.e., which furnace?) And what is critical >> for your interface, other than excluding fluorine? What kind of >> analysis are you planning to do? >> >> I ask, because there are alternatives to HF -- not so much for >> removing native oxide, but for decontamination. So, it would be good >> to get a better idea of what your objective or experimental plan is.... >> >> Thanks, >> >> Mary >> >> Houbi Nguyen wrote: >>> Hello everyone. I have a question regarding native oxide etching. >>> Does anyone know of a method by which I can strip off native oxide >>> (i.e., for a pre-diffusion cleaning) without using a >>> fluorine-containing mixture, specifically HF? Thanks for the help. >>> Houbi >> >> >> -- >> Mary X. Tang, Ph.D. >> Stanford Nanofabrication Facility >> CIS Room 136, Mail Code 4070 >> Stanford, CA 94305 >> (650)723-9980 >> mtang at stanford.edu >> http://snf.stanford.edu >> > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From moye at arc.nasa.gov Tue Jul 8 11:51:33 2008 From: moye at arc.nasa.gov (Michael M. Oye) Date: Tue, 8 Jul 2008 11:51:33 -0700 Subject: Si deposition onto substrates containing Fe, Ni, Al, and/or Cr Message-ID: <000601c8e12b$a491efd0$5755e88f@e3003646> Hello, I spoke to Maurice and he referred me to writing an email to this address. We are interested in depositing 100 nm to 1 micron of Si, either amorphous, nano-, or micro-crystalline. We do need to have the capability of doping n-type or p-type. Furthermore, the "quality" of the deposited Si does not have to be "on par" with world record setting device quality, as long as it is somewhat optically and electrically responsive. Our substrates will contain carbon, and may contain either Fe, Ni, Al, and/or Cr. We do have flexiblity with regards to controlling which of the metallic elements the substrate can contain. Please let me know if there is a process tool that we may be able to have access to. Thanks! Regards, Mike ************************************************** Michael M. Oye, Ph.D. Research Scientist, ELORET Corporation Office Location: Building N-229, Room 133 Mailing Address: NASA Ames Research Center, M/S: 229-1 Moffett Field, CA 94035 Office Phone: (650) 604-1179 Fax Number: (650) 604-0987 Mobile: (805) 815-9286 E-mail: moye at arc.nasa.gov ************************************************** -------------- next part -------------- An HTML attachment was scrubbed... URL: From mahnaz at stanford.edu Wed Jul 9 14:55:05 2008 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Wed, 09 Jul 2008 14:55:05 -0700 Subject: [POSSIBLE VIRUS:###] [Fwd: Fw: msds for etchants (Aditya, jimkruger)] Message-ID: <487533B9.3070605@stanford.edu> Hello all, Jim K. tells me these tests are done on sts nitride wafers with hard mask. They will test each chemical once and see which one works for them. mahnaz -------------- next part -------------- An embedded message was scrubbed... From: jim kruger Subject: Fw: msds for etchants (Aditya, jimkruger) Date: Wed, 9 Jul 2008 10:37:15 -0700 (PDT) Size: 248878 URL: From mahnaz at stanford.edu Wed Jul 9 15:48:53 2008 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Wed, 09 Jul 2008 15:48:53 -0700 Subject: [POSSIBLE VIRUS:###] [Fwd: Fwd: MSDS's] Message-ID: <48754055.5070008@stanford.edu> too many request from the group, I will attend to it in later time as I am checking other chemicals for their immediate use. mahnaz -------------- next part -------------- An embedded message was scrubbed... From: "Mohamed Hilali" Subject: Fwd: MSDS's Date: Mon, 23 Jun 2008 13:34:30 -0700 Size: 383171 URL: From mahnaz at stanford.edu Wed Jul 9 16:18:50 2008 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Wed, 09 Jul 2008 16:18:50 -0700 Subject: [POSSIBLE VIRUS:###] [Fwd: Fwd: MSDS's for some adhesives and ceramic substrates] Message-ID: <4875475A.4020004@stanford.edu> I just gave the appropriate labeling to Aditya. Please use headway and clean up quickly afterward, I mentioned to Aditya one of the chemical is not base compatible.. When using hotplate or bluem oven use foil and discard them after your use. mahnaz -------------- next part -------------- An embedded message was scrubbed... From: "Aditya Agarwal" Subject: Fwd: MSDS's for some adhesives and ceramic substrates Date: Wed, 9 Jul 2008 15:48:38 -0700 Size: 110961 URL: From mahnaz at stanford.edu Wed Jul 9 16:25:40 2008 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Wed, 09 Jul 2008 16:25:40 -0700 Subject: [Fwd: [POSSIBLE VIRUS:###] [Fwd: Fw: msds for etchants (Aditya, jimkruger)]] Message-ID: <487548F4.7060603@stanford.edu> Here is the process flow that goes with it, for the record. Send by Jim K. and Aditya and Kathy was cc'd on it. mahnaz Proecess flow: on new Si wafer STS Nitride dep photomask wet ech 6:1 BOE solvent strip resist (optional-reist will strip in Si etch) Si etch at specified temp. at WBgeneral or WBgaas; use water bath cap for the EDA etchant inspect surface roughness strip Nitride in 6:1 BOE step measurement at AlphaStep End -------------- next part -------------- An embedded message was scrubbed... From: Mahnaz Mansourpour Subject: [POSSIBLE VIRUS:###] [Fwd: Fw: msds for etchants (Aditya, jimkruger)] Date: Wed, 09 Jul 2008 14:55:05 -0700 Size: 251283 URL: From mtang at stanford.edu Wed Jul 9 17:41:43 2008 From: mtang at stanford.edu (Mary Tang) Date: Wed, 09 Jul 2008 17:41:43 -0700 Subject: [Fwd: [POSSIBLE VIRUS:###] [Fwd: Fw: msds for etchants (Aditya, jimkruger)]] In-Reply-To: <487548F4.7060603@stanford.edu> References: <487548F4.7060603@stanford.edu> Message-ID: <48755AC7.5070509@stanford.edu> Hi all -- I'm not sure I have a good feeling about ethylene diamine. I've never worked with it but it does not have a good reputation. Uli knows a lot about it and we can follow up with her. By the way, we'd have to make sure of their wet bench setup -- they need refluxing at 118 C, so it is going to be done on a hot plate. The bath setup we have would be too top-heavy for a hot plate. Mary Mahnaz Mansourpour wrote: > Here is the process flow that goes with it, for the record. Send by > Jim K. and Aditya and Kathy was cc'd on it. > mahnaz > > > > Proecess flow: > on new Si wafer > > STS Nitride dep > > photomask > > wet ech 6:1 BOE > > solvent strip resist (optional-reist will strip in Si etch) > > Si etch at specified temp. at WBgeneral or WBgaas; use water bath cap > for the EDA etchant > > inspect surface roughness > > strip Nitride in 6:1 BOE > > step measurement at AlphaStep > > > End > > > > > ------------------------------------------------------------------------ > > Subject: > [POSSIBLE VIRUS:###] [Fwd: Fw: msds for etchants (Aditya, jimkruger)] > From: > Mahnaz Mansourpour > Date: > Wed, 09 Jul 2008 14:55:05 -0700 > To: > specmat at snf.stanford.edu > > To: > specmat at snf.stanford.edu > > > Hello all, > > Jim K. tells me these tests are done on sts nitride wafers with hard > mask. They will test each chemical once and see which one works for > them. > > mahnaz > > ------------------------------------------------------------------------ > > Subject: > Fw: msds for etchants (Aditya, jimkruger) > From: > jim kruger > Date: > Wed, 9 Jul 2008 10:37:15 -0700 (PDT) > To: > Mahnaz > > To: > Mahnaz > > > Transene Si etchants, one NaOH based, one EthyleneDiAmine based. > We will test them at WBgeneral or WBgaas. The EDA etch to be capped with a water filled dish for re-flux. > > Probably only a few tests. > > Each bottle is one liter. > > jim > > > > > --- On Wed, 7/9/08, Aditya Agarwal wrote: > > >> From: Aditya Agarwal >> Subject: msds for etchants >> To: "jim kruger" >> Date: Wednesday, July 9, 2008, 10:17 AM >> ---------- Forwarded message ---------- >> From: customer service >> Date: Fri, Jun 6, 2008 at 11:19 AM >> Subject: RE: request for quote >> To: Aditya Agarwal >> >> >> >> >> >> >> > > > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mtang at stanford.edu Wed Jul 9 18:37:59 2008 From: mtang at stanford.edu (Mary Tang) Date: Wed, 09 Jul 2008 18:37:59 -0700 Subject: [POSSIBLE VIRUS:###] [Fwd: Fwd: MSDS's for some adhesives and ceramic substrates] In-Reply-To: <4875475A.4020004@stanford.edu> References: <4875475A.4020004@stanford.edu> Message-ID: <487567F7.3000401@stanford.edu> Hi all -- We've been pretty careful about making sure people don't spin coat nanoparticles in the lab, with the exception of polystyrene spheres at the headway2 (because PS spheres can be removed easily using acetone or other solvents.) I am not sure, but suspect that this stuff is basically nanoparticles of BN suspended in some sort of binder and adhesive. It's non-conductive, so less of a concern than nanogold or carbon nanotubes getting spun up in the lab. But they could be hard to get rid of if someone is pretty sloppy. Just a thought. As Mahnaz has often said, we should consider having a station set aside just for this kind of processing. The other thing I think is interesting is that this stuff is basically cool grease, and is rated for vacuum systems and relatively high temperatures. If this goes on smoothly, this could be a better way to bond wafers together for sts etching. What do you think? I'm thinking that, as Mahnaz says, we could use a manual spin coater for applications like this.... Mary Mahnaz Mansourpour wrote: > I just gave the appropriate labeling to Aditya. > Please use headway and clean up quickly afterward, I mentioned to > Aditya one of the chemical is not base compatible.. When using > hotplate or bluem oven use foil and discard them after your use. > > mahnaz > > ------------------------------------------------------------------------ > > Subject: > Fwd: MSDS's for some adhesives and ceramic substrates > From: > "Aditya Agarwal" > Date: > Wed, 9 Jul 2008 15:48:38 -0700 > To: > "Mahnaz Mansourpour" > > To: > "Mahnaz Mansourpour" > > > Mahnaz, please see the attached MSDS's for the CERAMABOND and the > CERABOND-thinner. > > thanks. > aditya. > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mahnaz at stanford.edu Thu Jul 10 08:41:45 2008 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Thu, 10 Jul 2008 08:41:45 -0700 Subject: [Fwd: [POSSIBLE VIRUS:###] [Fwd: Fw: msds for etchants (Aditya, jimkruger)]] In-Reply-To: <48755AC7.5070509@stanford.edu> References: <487548F4.7060603@stanford.edu> <48755AC7.5070509@stanford.edu> Message-ID: <48762DB9.4040302@stanford.edu> Hi All, I have many other chemicals from them on hold, they are on rush rush order and on top it two new members that I do not know that well and try to guess what are they up to. My primary goal with them is not to get any of these material into the Ev bonder for now. We really have to have a set up for this kind of chemistries.I was suppose to ok the etchants last night which I did not get around it. Remember they have all the chemicals on site already. Can we have a quick meeting about this. mahnaz Mary Tang wrote: > Hi all -- > > I'm not sure I have a good feeling about ethylene diamine. I've never > worked with it but it does not have a good reputation. Uli knows a > lot about it and we can follow up with her. > > By the way, we'd have to make sure of their wet bench setup -- they > need refluxing at 118 C, so it is going to be done on a hot plate. > The bath setup we have would be too top-heavy for a hot plate. > > Mary > > Mahnaz Mansourpour wrote: >> Here is the process flow that goes with it, for the record. Send by >> Jim K. and Aditya and Kathy was cc'd on it. >> mahnaz >> >> >> >> Proecess flow: >> on new Si wafer >> >> STS Nitride dep >> >> photomask >> >> wet ech 6:1 BOE >> >> solvent strip resist (optional-reist will strip in Si etch) >> >> Si etch at specified temp. at WBgeneral or WBgaas; use water bath cap >> for the EDA etchant >> >> inspect surface roughness >> >> strip Nitride in 6:1 BOE >> >> step measurement at AlphaStep >> >> >> End >> >> >> >> >> ------------------------------------------------------------------------ >> >> Subject: >> [POSSIBLE VIRUS:###] [Fwd: Fw: msds for etchants (Aditya, jimkruger)] >> From: >> Mahnaz Mansourpour >> Date: >> Wed, 09 Jul 2008 14:55:05 -0700 >> To: >> specmat at snf.stanford.edu >> >> To: >> specmat at snf.stanford.edu >> >> >> Hello all, >> >> Jim K. tells me these tests are done on sts nitride wafers with hard >> mask. They will test each chemical once and see which one works for >> them. >> >> mahnaz >> >> ------------------------------------------------------------------------ >> >> Subject: >> Fw: msds for etchants (Aditya, jimkruger) >> From: >> jim kruger >> Date: >> Wed, 9 Jul 2008 10:37:15 -0700 (PDT) >> To: >> Mahnaz >> >> To: >> Mahnaz >> >> >> Transene Si etchants, one NaOH based, one EthyleneDiAmine based. >> We will test them at WBgeneral or WBgaas. The EDA etch to be capped >> with a water filled dish for re-flux. >> >> Probably only a few tests. >> >> Each bottle is one liter. >> >> jim >> >> >> >> >> --- On Wed, 7/9/08, Aditya Agarwal >> wrote: >> >> >>> From: Aditya Agarwal >>> Subject: msds for etchants >>> To: "jim kruger" >>> Date: Wednesday, July 9, 2008, 10:17 AM >>> ---------- Forwarded message ---------- >>> From: customer service >>> Date: Fri, Jun 6, 2008 at 11:19 AM >>> Subject: RE: request for quote >>> To: Aditya Agarwal >>> >>> >>> >>> >>> >>> >>> >> >> >> > > From mahnaz at stanford.edu Thu Jul 10 09:43:35 2008 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Thu, 10 Jul 2008 09:43:35 -0700 Subject: Adhesive chemicals Message-ID: <48763C37.3070902@stanford.edu> Hello all, Thinking about this chemicals and spinning them in to litho area, I like to put them on hold till we discuss them little more. Please do not proceed with them till further notice. mahnaz From jimkruger at yahoo.com Thu Jul 10 10:15:07 2008 From: jimkruger at yahoo.com (jim kruger) Date: Thu, 10 Jul 2008 10:15:07 -0700 (PDT) Subject: Adhesive chemicals In-Reply-To: <48763C37.3070902@stanford.edu> Message-ID: <385832.14037.qm@web38904.mail.mud.yahoo.com> I think we can get permission to try mixing the cement in the saw room, outside the lab. I fear it will not be suitable for spinning anyway. There is a hot plate and the "fire brick" furnace (to 1000 C or more) in that area. If a suitable bond can be made, we can ask again for permission to bring already cured sandwiches into the lab. jim --- On Thu, 7/10/08, Mahnaz Mansourpour wrote: > From: Mahnaz Mansourpour > Subject: Adhesive chemicals > To: jimkruger at snf.stanford.edu, "Aditya Agarwal" , specmat at snf.stanford.edu, "Kathy Jackson" > Date: Thursday, July 10, 2008, 9:43 AM > Hello all, > > Thinking about this chemicals and spinning them in to > litho area, I > like to put them on hold till we discuss them little more. > Please do not > proceed with them till further notice. > > mahnaz From support at global-fab.com Thu Jul 24 01:08:08 2008 From: support at global-fab.com (David Lee) Date: Thu, 24 Jul 2008 04:08:08 -0400 (EDT) Subject: Semiconductor Equipment for sale Message-ID: <1102182515868.1101401002153.9044.5.120405DA@scheduler> G-Fab LOGO [http://rs6.net/tn.jsp?e=001c6ijZiuHTucQcec9fDZRymuTFjiNEKhcnLF_KZ7GcV9jRjGd3rnK0opjacYfju21Fj5bMiJp20fivMjLcZSC1uEs3ZQzDdriqkh7I3CEFuSMztsSfDKoYQ==] ~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~ Global Fab Surplus [http://rs6.net/tn.jsp?e=001c6ijZiuHTucQcec9fDZRymuTFjiNEKhcnLF_KZ7GcV9jRjGd3rnK0opjacYfju21Fj5bMiJp20fivMjLcZSC1uEs3ZQzDdriqkh7I3CEFuSMztsSfDKoYQ==] We have available the tools listed below and many more on our website. 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Update Profile/Email Address http://visitor.constantcontact.com/d.jsp?v=001RO3dPrXHwIHjNc18qg2uYpS-p4D8dFWvMR43ucA0My4izPL_VnZrCD4D4_0uOMzw0RCij_5A9cc%3D&p=oo Instant removal with SafeUnsubscribe(TM) http://visitor.constantcontact.com/d.jsp?v=001RO3dPrXHwIHjNc18qg2uYpS-p4D8dFWvMR43ucA0My4izPL_VnZrCD4D4_0uOMzw0RCij_5A9cc%3D&p=un Privacy Policy: http://ui.constantcontact.com/roving/CCPrivacyPolicy.jsp Global Fab Surplus | 195 Kirkstone Lane | Colorado Springs | CO | 80906 -------------- next part -------------- An HTML attachment was scrubbed... URL: From mahnaz at stanford.edu Thu Jul 24 17:46:12 2008 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Thu, 24 Jul 2008 17:46:12 -0700 Subject: [Fwd: boron spin-on dopant] Message-ID: <48892254.1060706@stanford.edu> -------- Original Message -------- Subject: boron spin-on dopant Date: Thu, 24 Jul 2008 13:58:00 -0700 From: "Mohamed Hilali" To: mahnaz at snf.stanford.edu Hi Mahnaz, I would like to use a boron spin-on dopant source. It is very similar to the phosphorus spin-on dopant source that we currently use except that this is a p-type dopant source instead of n-type. I have attached an MSDS. Once this material has been accepted the plan is to spin-on a Si wafer using the Headway spin coater and then to bake the wafer on a hot plate at 100-200 C. Please let me know if you have any questions or concerns. Thank you very much. Mohamed Hilali Twin Creeks Technologies, Tel: 408-507-1649 -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: PS3015 (B155 Polyboron SOD).pdf Type: application/pdf Size: 86468 bytes Desc: not available URL: From jimkruger at yahoo.com Fri Jul 25 09:50:35 2008 From: jimkruger at yahoo.com (jim kruger) Date: Fri, 25 Jul 2008 09:50:35 -0700 (PDT) Subject: Request Use of Transcene SCE-200 NaOH based Si etchant Message-ID: <45496.56912.qm@web38905.mail.mud.yahoo.com> Process flow: on new Si wafer STS Nitride dep photomask wet ech 6:1 BOE solvent strip resist (optional-reist will strip in Si etch) Transcene SCE-200 Si etch (NaOH based) at specified temp. at WBgeneral or Wbgaas. Inspect surface roughness Strip Nitride in 6:1 BOE Step measurement at AlphaStep, NanoSpec End Transene Si etchant, SCE-200, NaOH based We will test it at WBgeneral or Wbgaas, comparing to plain KOH and to TMAH. Probably only a few tests. The bottle is one liter. MSDS attached. jim -------------- next part -------------- A non-text attachment was scrubbed... Name: SCE-200.doc Type: application/msword Size: 34816 bytes Desc: not available URL: From Roger.Tsai at kla-tencor.com Fri Jul 25 10:29:53 2008 From: Roger.Tsai at kla-tencor.com (Tsai, Roger) Date: Fri, 25 Jul 2008 10:29:53 -0700 Subject: Resist and SAFIER Message-ID: <41AED56CF6068D4AB74C00AE4654F7E8E5653D@CA1EXCLV07.adcorp.kla-tencor.com> Hi, KLA-Tencor Corp. is considering to do some work at SNF involving, i-line resist THMR-iP5680 HP and SAFIER FSC-5000EX by TOK (Tokyo Ohka Kogyo Co., LTD). I wanted to know if we will be able to use these two in the SNF facility before we went through with the purchase order. SAFIER is a treatment/modifier for the resist. I have attached the MSDS forms for both chemicals. We want to take a look at the effect of SAFIER on the resist and see if we can use it for our product. We only want to examine post SAFIER resist structure, as of now, no etching will be done Thanks Roger -------------- next part -------------- An HTML attachment was scrubbed... URL: From Roger.Tsai at kla-tencor.com Fri Jul 25 10:32:03 2008 From: Roger.Tsai at kla-tencor.com (Tsai, Roger) Date: Fri, 25 Jul 2008 10:32:03 -0700 Subject: Forgot the attachments! Message-ID: <41AED56CF6068D4AB74C00AE4654F7E8E56547@CA1EXCLV07.adcorp.kla-tencor.com> ________________________________ From: Tsai, Roger Sent: Friday, July 25, 2008 10:30 AM To: 'specmat at snf.stanford.edu' Subject: Resist and SAFIER Hi, KLA-Tencor Corp. is considering to do some work at SNF involving, i-line resist THMR-iP5680 HP and SAFIER FSC-5000EX by TOK (Tokyo Ohka Kogyo Co., LTD). I wanted to know if we will be able to use these two in the SNF facility before we went through with the purchase order. SAFIER is a treatment/modifier for the resist. I have attached the MSDS forms for both chemicals. We want to take a look at the effect of SAFIER on the resist and see if we can use it for our product. We only want to examine post SAFIER resist structure, as of now, no etching will be done Thanks Roger -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: FSC-5000EX 20060101 (C) US.doc Type: application/msword Size: 94720 bytes Desc: FSC-5000EX 20060101 (C) US.doc URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: THMR-iP5680 HP 20060101 (B) US.doc Type: application/msword Size: 90112 bytes Desc: THMR-iP5680 HP 20060101 (B) US.doc URL: From mahnaz at stanford.edu Fri Jul 25 10:34:16 2008 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Fri, 25 Jul 2008 10:34:16 -0700 Subject: [Fwd: Process flow for the Boron Spin-on dopant] Message-ID: <488A0E98.5020208@stanford.edu> Process flow for the spin-on-dopant. mahnaz -------- Original Message -------- Subject: Process flow for the Boron Spin-on dopant Date: Fri, 25 Jul 2008 10:17:20 -0700 (PDT) From: jim kruger To: Mahnaz CC: Mohamed Hilali , Aditya Agarwal , Kathy Jackson Process flow for Born Spin-on dopant. spin on Headway hot plate bake 200 C ,2 minutes. RTAgaas for activation (900 C? 30 sec?). 6:1 BOE for strip in WBgeneral of WBgaas STS PECVD nitride Litho, wet etch Metal Dep (Innotec) Litho, wet etch Metal Dep backside (Innotec) End Thanks, jim -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: PS3015 (B155 Polyboron SOD).pdf Type: application/pdf Size: 86468 bytes Desc: not available URL: From mtang at stanford.edu Fri Jul 25 11:18:45 2008 From: mtang at stanford.edu (Mary Tang) Date: Fri, 25 Jul 2008 11:18:45 -0700 Subject: [Fwd: Process flow for the Boron Spin-on dopant] In-Reply-To: <488A0E98.5020208@stanford.edu> References: <488A0E98.5020208@stanford.edu> Message-ID: <488A1905.5040601@stanford.edu> Hi all -- In principle, this process flow is fine for spin-on-dopants. However -- in this case, there is concern about the solvent in this material. 2-ethoxyethanol is one of the family of ethylene glycol ethers that has been phased out of semiconductor fabs because of links to human reproductive problems, such as miscarriages in women and infertility in men. In fact, it is getting increasingly more difficult to find materials such as these, at least in the US, because of this. Can you use a comparable material based on an alcohol or propylene glycol ether solvent? If so, we could immediately approve it. Mary Mahnaz Mansourpour wrote: > Process flow for the spin-on-dopant. > > mahnaz > > -------- Original Message -------- > Subject: Process flow for the Boron Spin-on dopant > Date: Fri, 25 Jul 2008 10:17:20 -0700 (PDT) > From: jim kruger > To: Mahnaz > CC: Mohamed Hilali , Aditya > Agarwal , Kathy Jackson > > > > > Process flow for Born Spin-on dopant. > > spin on Headway > > hot plate bake 200 C ,2 minutes. > > RTAgaas for activation (900 C? 30 sec?). > > 6:1 BOE for strip in WBgeneral of WBgaas > > STS PECVD nitride > > Litho, wet etch > > Metal Dep (Innotec) > > Litho, wet etch > > Metal Dep backside (Innotec) > > End > > > Thanks, > > jim > > > > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mohamed at twincreekstechnologies.com Tue Jul 29 12:40:55 2008 From: mohamed at twincreekstechnologies.com (Mohamed Hilali) Date: Tue, 29 Jul 2008 12:40:55 -0700 Subject: [Fwd: Process flow for the Boron Spin-on dopant] In-Reply-To: <488A1905.5040601@stanford.edu> References: <488A0E98.5020208@stanford.edu> <488A1905.5040601@stanford.edu> Message-ID: <367f35eb0807291240n54aeb6c6lae9a4fdf254eb750@mail.gmail.com> Hi, I found another boron spin-on dopant from the same company. This one uses isopropyl alcohol as the solvent. These precursors tend to give it a somewhat shorter shelf-life compared with the ethylene glycol ethers, but it is still long enough for our purposes. I have attached the MSDS for your approval. The process flow is exactly the same as before. Thank you very much. Regards, Mohamed Hilali Twin Creeks Technologies, Inc Tel: 408-507-1649 On Fri, Jul 25, 2008 at 11:18 AM, Mary Tang wrote: > Hi all -- > > In principle, this process flow is fine for spin-on-dopants. However -- in > this case, there is concern about the solvent in this material. > 2-ethoxyethanol is one of the family of ethylene glycol ethers that has > been phased out of semiconductor fabs because of links to human reproductive > problems, such as miscarriages in women and infertility in men. In fact, it > is getting increasingly more difficult to find materials such as these, at > least in the US, because of this. Can you use a comparable material based > on an alcohol or propylene glycol ether solvent? If so, we could > immediately approve it. > > Mary > > > Mahnaz Mansourpour wrote: > >> Process flow for the spin-on-dopant. >> >> mahnaz >> >> >> -------- Original Message -------- >> Subject: Process flow for the Boron Spin-on dopant >> Date: Fri, 25 Jul 2008 10:17:20 -0700 (PDT) >> From: jim kruger >> To: Mahnaz >> CC: Mohamed Hilali , Aditya >> Agarwal , Kathy Jackson < >> kj.jackson at comcast.net> >> >> >> >> Process flow for Born Spin-on dopant. >> >> spin on Headway >> >> hot plate bake 200 C ,2 minutes. >> >> RTAgaas for activation (900 C? 30 sec?). >> >> 6:1 BOE for strip in WBgeneral of WBgaas >> >> STS PECVD nitride >> >> Litho, wet etch >> >> Metal Dep (Innotec) >> >> Litho, wet etch >> >> Metal Dep backside (Innotec) >> >> End >> >> >> Thanks, >> >> jim >> >> >> >> > > > -- > Mary X. Tang, Ph.D. > Stanford Nanofabrication Facility > CIS Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu > > -------------- next part -------------- An HTML attachment was scrubbed... URL: From mohamed at twincreekstechnologies.com Tue Jul 29 12:43:11 2008 From: mohamed at twincreekstechnologies.com (Mohamed Hilali) Date: Tue, 29 Jul 2008 12:43:11 -0700 Subject: [Fwd: Process flow for the Boron Spin-on dopant] In-Reply-To: <367f35eb0807291240n54aeb6c6lae9a4fdf254eb750@mail.gmail.com> References: <488A0E98.5020208@stanford.edu> <488A1905.5040601@stanford.edu> <367f35eb0807291240n54aeb6c6lae9a4fdf254eb750@mail.gmail.com> Message-ID: <367f35eb0807291243hd397e9dlaf52d3d01f33ba0@mail.gmail.com> I apologize. I forgot to attach the MSDS in my last email. It's attached to this one. Thank you. Mohamed Hilali On Tue, Jul 29, 2008 at 12:40 PM, Mohamed Hilali < mohamed at twincreekstechnologies.com> wrote: > Hi, > > I found another boron spin-on dopant from the same company. This one uses > isopropyl alcohol as the solvent. These precursors tend to give it a > somewhat shorter shelf-life compared with the ethylene glycol ethers, but it > is still long enough for our purposes. > > I have attached the MSDS for your approval. The process flow is exactly the > same as before. > > Thank you very much. > > Regards, > > Mohamed Hilali > Twin Creeks Technologies, Inc > > Tel: 408-507-1649 > > > > On Fri, Jul 25, 2008 at 11:18 AM, Mary Tang wrote: > >> Hi all -- >> >> In principle, this process flow is fine for spin-on-dopants. However -- >> in this case, there is concern about the solvent in this material. >> 2-ethoxyethanol is one of the family of ethylene glycol ethers that has >> been phased out of semiconductor fabs because of links to human reproductive >> problems, such as miscarriages in women and infertility in men. In fact, it >> is getting increasingly more difficult to find materials such as these, at >> least in the US, because of this. Can you use a comparable material based >> on an alcohol or propylene glycol ether solvent? If so, we could >> immediately approve it. >> >> Mary >> >> >> Mahnaz Mansourpour wrote: >> >>> Process flow for the spin-on-dopant. >>> >>> mahnaz >>> >>> >>> -------- Original Message -------- >>> Subject: Process flow for the Boron Spin-on dopant >>> Date: Fri, 25 Jul 2008 10:17:20 -0700 (PDT) >>> From: jim kruger >>> To: Mahnaz >>> CC: Mohamed Hilali , Aditya >>> Agarwal , Kathy Jackson < >>> kj.jackson at comcast.net> >>> >>> >>> >>> Process flow for Born Spin-on dopant. >>> >>> spin on Headway >>> >>> hot plate bake 200 C ,2 minutes. >>> >>> RTAgaas for activation (900 C? 30 sec?). >>> >>> 6:1 BOE for strip in WBgeneral of WBgaas >>> >>> STS PECVD nitride >>> >>> Litho, wet etch >>> >>> Metal Dep (Innotec) >>> >>> Litho, wet etch >>> >>> Metal Dep backside (Innotec) >>> >>> End >>> >>> >>> Thanks, >>> >>> jim >>> >>> >>> >>> >> >> >> -- >> Mary X. Tang, Ph.D. >> Stanford Nanofabrication Facility >> CIS Room 136, Mail Code 4070 >> Stanford, CA 94305 >> (650)723-9980 >> mtang at stanford.edu >> http://snf.stanford.edu >> >> > -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: PS3020 (B216 Boron SOD).pdf Type: application/pdf Size: 40884 bytes Desc: not available URL: From mtang at stanford.edu Tue Jul 29 13:02:38 2008 From: mtang at stanford.edu (Mary Tang) Date: Tue, 29 Jul 2008 13:02:38 -0700 Subject: [Fwd: Process flow for the Boron Spin-on dopant] In-Reply-To: <367f35eb0807291243hd397e9dlaf52d3d01f33ba0@mail.gmail.com> References: <488A0E98.5020208@stanford.edu> <488A1905.5040601@stanford.edu> <367f35eb0807291240n54aeb6c6lae9a4fdf254eb750@mail.gmail.com> <367f35eb0807291243hd397e9dlaf52d3d01f33ba0@mail.gmail.com> Message-ID: <488F775E.3010205@stanford.edu> Excellent -- Thanks! By the way, I'm presuming that by "wet etch" in your process description below you mean some sort of standard chemical processing at wbgeneral or wbgaas. Please have your chemical delivered to SNF/CIS shipping & receiving, directed to your attention, with your contact info. Make sure to obtain a yellow label and barcode from Mahnaz (or Ed or me). Your chemical should be stored with other flammables (storage class "L") -- what is the storage temperature? And please make sure to dispose of hazardous waste in an appropriate manner. Mary Mohamed Hilali wrote: > I apologize. I forgot to attach the MSDS in my last email. It's > attached to this one. > > Thank you. > > Mohamed Hilali > > On Tue, Jul 29, 2008 at 12:40 PM, Mohamed Hilali > > wrote: > > Hi, > > I found another boron spin-on dopant from the same company. This > one uses isopropyl alcohol as the solvent. These precursors tend > to give it a somewhat shorter shelf-life compared with the > ethylene glycol ethers, but it is still long enough for our purposes. > > I have attached the MSDS for your approval. The process flow is > exactly the same as before. > > Thank you very much. > > Regards, > > Mohamed Hilali > Twin Creeks Technologies, Inc > > Tel: 408-507-1649 > > > > On Fri, Jul 25, 2008 at 11:18 AM, Mary Tang > wrote: > > Hi all -- > > In principle, this process flow is fine for spin-on-dopants. > However -- in this case, there is concern about the solvent > in this material. 2-ethoxyethanol is one of the family of > ethylene glycol ethers that has been phased out of > semiconductor fabs because of links to human reproductive > problems, such as miscarriages in women and infertility in > men. In fact, it is getting increasingly more difficult to > find materials such as these, at least in the US, because of > this. Can you use a comparable material based on an alcohol > or propylene glycol ether solvent? If so, we could > immediately approve it. > > Mary > > > Mahnaz Mansourpour wrote: > > Process flow for the spin-on-dopant. > > mahnaz > > > -------- Original Message -------- > Subject: Process flow for the Boron Spin-on dopant > Date: Fri, 25 Jul 2008 10:17:20 -0700 (PDT) > From: jim kruger > > To: Mahnaz > > CC: Mohamed Hilali >, Aditya > Agarwal >, Kathy Jackson > > > > > > Process flow for Born Spin-on dopant. > > spin on Headway > > hot plate bake 200 C ,2 minutes. > > RTAgaas for activation (900 C? 30 sec?). > > 6:1 BOE for strip in WBgeneral of WBgaas > > STS PECVD nitride > > Litho, wet etch > > Metal Dep (Innotec) > > Litho, wet etch > > Metal Dep backside (Innotec) > > End > > > Thanks, > > jim > > > > > > > -- > Mary X. Tang, Ph.D. > Stanford Nanofabrication Facility > CIS Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu > > > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mohamed at twincreekstechnologies.com Wed Jul 30 08:27:16 2008 From: mohamed at twincreekstechnologies.com (Mohamed Hilali) Date: Wed, 30 Jul 2008 08:27:16 -0700 Subject: [Fwd: Process flow for the Boron Spin-on dopant] In-Reply-To: <488F775E.3010205@stanford.edu> References: <488A0E98.5020208@stanford.edu> <488A1905.5040601@stanford.edu> <367f35eb0807291240n54aeb6c6lae9a4fdf254eb750@mail.gmail.com> <367f35eb0807291243hd397e9dlaf52d3d01f33ba0@mail.gmail.com> <488F775E.3010205@stanford.edu> Message-ID: <367f35eb0807300827t551c6b89s16ba8d5666b1ea2c@mail.gmail.com> Hi Mary, Yes, the wet etch in the process below is standard chemical processing. I should receive this spin-on dopant next week. I will get the label and barcode for storage. It is better to store this spin-on dopant in a refrigerator to preserve longer shelf-life. It's going to be a 125 ml bottle, so it should take little space. Thank you very much. Regards, Mohamed Hilali On Tue, Jul 29, 2008 at 1:02 PM, Mary Tang wrote: > Excellent -- Thanks! By the way, I'm presuming that by "wet etch" in your > process description below you mean some sort of standard chemical processing > at wbgeneral or wbgaas. > Please have your chemical delivered to SNF/CIS shipping & receiving, > directed to your attention, with your contact info. Make sure to obtain a > yellow label and barcode from Mahnaz (or Ed or me). Your chemical should be > stored with other flammables (storage class "L") -- what is the storage > temperature? And please make sure to dispose of hazardous waste in an > appropriate manner. > > Mary > > Mohamed Hilali wrote: > >> I apologize. I forgot to attach the MSDS in my last email. It's attached >> to this one. >> >> Thank you. >> >> Mohamed Hilali >> >> On Tue, Jul 29, 2008 at 12:40 PM, Mohamed Hilali < >> mohamed at twincreekstechnologies.com > mohamed at twincreekstechnologies.com>> wrote: >> >> Hi, >> >> I found another boron spin-on dopant from the same company. This >> one uses isopropyl alcohol as the solvent. These precursors tend >> to give it a somewhat shorter shelf-life compared with the >> ethylene glycol ethers, but it is still long enough for our purposes. >> >> I have attached the MSDS for your approval. The process flow is >> exactly the same as before. >> >> Thank you very much. >> >> Regards, >> >> Mohamed Hilali >> Twin Creeks Technologies, Inc >> >> Tel: 408-507-1649 >> >> >> >> On Fri, Jul 25, 2008 at 11:18 AM, Mary Tang > > wrote: >> >> Hi all -- >> >> In principle, this process flow is fine for spin-on-dopants. >> However -- in this case, there is concern about the solvent >> in this material. 2-ethoxyethanol is one of the family of >> ethylene glycol ethers that has been phased out of >> semiconductor fabs because of links to human reproductive >> problems, such as miscarriages in women and infertility in >> men. In fact, it is getting increasingly more difficult to >> find materials such as these, at least in the US, because of >> this. Can you use a comparable material based on an alcohol >> or propylene glycol ether solvent? If so, we could >> immediately approve it. >> >> Mary >> >> >> Mahnaz Mansourpour wrote: >> >> Process flow for the spin-on-dopant. >> >> mahnaz >> >> >> -------- Original Message -------- >> Subject: Process flow for the Boron Spin-on dopant >> Date: Fri, 25 Jul 2008 10:17:20 -0700 (PDT) >> From: jim kruger > > >> To: Mahnaz > > >> CC: Mohamed Hilali > >, Aditya >> Agarwal > >, Kathy Jackson >> > >> >> >> >> Process flow for Born Spin-on dopant. >> >> spin on Headway >> >> hot plate bake 200 C ,2 minutes. >> >> RTAgaas for activation (900 C? 30 sec?). >> >> 6:1 BOE for strip in WBgeneral of WBgaas >> >> STS PECVD nitride >> >> Litho, wet etch >> >> Metal Dep (Innotec) >> >> Litho, wet etch >> >> Metal Dep backside (Innotec) >> >> End >> >> >> Thanks, >> >> jim >> >> >> >> >> >> -- Mary X. Tang, Ph.D. >> Stanford Nanofabrication Facility >> CIS Room 136, Mail Code 4070 >> Stanford, CA 94305 >> (650)723-9980 >> mtang at stanford.edu >> http://snf.stanford.edu >> >> >> >> > > -- > Mary X. Tang, Ph.D. > Stanford Nanofabrication Facility > CIS Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu > > -------------- next part -------------- An HTML attachment was scrubbed... URL: