[Fwd: Process flow for the Boron Spin-on dopant]

Mahnaz Mansourpour mahnaz at stanford.edu
Fri Jul 25 10:34:16 PDT 2008

  Process flow for the spin-on-dopant.


-------- Original Message --------
Subject: Process flow for the Boron Spin-on dopant
Date: Fri, 25 Jul 2008 10:17:20 -0700 (PDT)
From: jim kruger <jimkruger at yahoo.com>
To: Mahnaz <mahnaz at snf.stanford.edu>
CC: Mohamed Hilali <mohamed at twincreekstechnologies.com>, Aditya Agarwal 
<aditya at twincreekstechnologies.com>, Kathy Jackson <kj.jackson at comcast.net>

Process flow for Born Spin-on dopant.

spin on Headway

hot plate bake 200 C ,2 minutes.

RTAgaas for activation  (900 C?  30 sec?).

6:1 BOE for strip in WBgeneral of WBgaas

STS PECVD nitride

Litho, wet etch

Metal Dep (Innotec)

Litho, wet etch

Metal Dep backside (Innotec)





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