[Fwd: Process flow for the Boron Spin-on dopant]

[Mary Tang]

Hi all --

In principle, this process flow is fine for spin-on-dopants.  However -- 
in this case, there is concern about the solvent in this material.  
2-ethoxyethanol is one of the family of ethylene glycol ethers that has 
been phased out of semiconductor fabs because of links to human 
reproductive problems, such as miscarriages in women and infertility in 
men.  In fact, it is getting increasingly more difficult to find 
materials such as these, at least in the US, because of this.  Can you 
use a comparable material based on an alcohol or propylene glycol ether 
solvent?  If so, we could immediately approve it.

Mary


Mahnaz Mansourpour wrote:
> Process flow for the spin-on-dopant.
>
> mahnaz
>
> -------- Original Message --------
> Subject: 	Process flow for the Boron Spin-on dopant
> Date: 	Fri, 25 Jul 2008 10:17:20 -0700 (PDT)
> From: 	jim kruger <jimkruger at yahoo.com>
> To: 	Mahnaz <mahnaz at snf.stanford.edu>
> CC: 	Mohamed Hilali <mohamed at twincreekstechnologies.com>, Aditya 
> Agarwal <aditya at twincreekstechnologies.com>, Kathy Jackson 
> <kj.jackson at comcast.net>
>
>
>
> Process flow for Born Spin-on dopant.
>
> spin on Headway
>
> hot plate bake 200 C ,2 minutes.
>
> RTAgaas for activation  (900 C?  30 sec?).
>
> 6:1 BOE for strip in WBgeneral of WBgaas
>
> STS PECVD nitride
>
> Litho, wet etch
>
> Metal Dep (Innotec)
>
> Litho, wet etch
>
> Metal Dep backside (Innotec)
>
> End
>
>
> Thanks,
>
> jim
>
>
>       
>   


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu