[Fwd: Process flow for the Boron Spin-on dopant]

[Mohamed Hilali]

Hi,

I found another boron spin-on dopant from the same company. This one uses
isopropyl alcohol as the solvent. These precursors tend to give it a
somewhat shorter shelf-life compared with the ethylene glycol ethers, but it
is still long enough for our purposes.

I have attached the MSDS for your approval. The process flow is exactly the
same as before.

Thank you very much.

Regards,

Mohamed Hilali
Twin Creeks Technologies, Inc

Tel: 408-507-1649


On Fri, Jul 25, 2008 at 11:18 AM, Mary Tang <mtang at stanford.edu> wrote:

> Hi all --
>
> In principle, this process flow is fine for spin-on-dopants.  However -- in
> this case, there is concern about the solvent in this material.
>  2-ethoxyethanol is one of the family of ethylene glycol ethers that has
> been phased out of semiconductor fabs because of links to human reproductive
> problems, such as miscarriages in women and infertility in men.  In fact, it
> is getting increasingly more difficult to find materials such as these, at
> least in the US, because of this.  Can you use a comparable material based
> on an alcohol or propylene glycol ether solvent?  If so, we could
> immediately approve it.
>
> Mary
>
>
> Mahnaz Mansourpour wrote:
>
>> Process flow for the spin-on-dopant.
>>
>> mahnaz
>>
>>
>> -------- Original Message --------
>> Subject:        Process flow for the Boron Spin-on dopant
>> Date:   Fri, 25 Jul 2008 10:17:20 -0700 (PDT)
>> From:   jim kruger <jimkruger at yahoo.com>
>> To:     Mahnaz <mahnaz at snf.stanford.edu>
>> CC:     Mohamed Hilali <mohamed at twincreekstechnologies.com>, Aditya
>> Agarwal <aditya at twincreekstechnologies.com>, Kathy Jackson <
>> kj.jackson at comcast.net>
>>
>>
>>
>> Process flow for Born Spin-on dopant.
>>
>> spin on Headway
>>
>> hot plate bake 200 C ,2 minutes.
>>
>> RTAgaas for activation  (900 C?  30 sec?).
>>
>> 6:1 BOE for strip in WBgeneral of WBgaas
>>
>> STS PECVD nitride
>>
>> Litho, wet etch
>>
>> Metal Dep (Innotec)
>>
>> Litho, wet etch
>>
>> Metal Dep backside (Innotec)
>>
>> End
>>
>>
>> Thanks,
>>
>> jim
>>
>>
>>
>>
>
>
> --
> Mary X. Tang, Ph.D.
> Stanford Nanofabrication Facility
> CIS Room 136, Mail Code 4070
> Stanford, CA  94305
> (650)723-9980
> mtang at stanford.edu
> http://snf.stanford.edu
>
>
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