[Fwd: Process flow for the Boron Spin-on dopant]

Mohamed Hilali mohamed at twincreekstechnologies.com
Tue Jul 29 12:43:11 PDT 2008


I apologize. I forgot to attach the MSDS in my last email. It's attached to
this one.

Thank you.

Mohamed Hilali

On Tue, Jul 29, 2008 at 12:40 PM, Mohamed Hilali <
mohamed at twincreekstechnologies.com> wrote:

> Hi,
>
> I found another boron spin-on dopant from the same company. This one uses
> isopropyl alcohol as the solvent. These precursors tend to give it a
> somewhat shorter shelf-life compared with the ethylene glycol ethers, but it
> is still long enough for our purposes.
>
> I have attached the MSDS for your approval. The process flow is exactly the
> same as before.
>
> Thank you very much.
>
> Regards,
>
> Mohamed Hilali
> Twin Creeks Technologies, Inc
>
> Tel: 408-507-1649
>
>
>
> On Fri, Jul 25, 2008 at 11:18 AM, Mary Tang <mtang at stanford.edu> wrote:
>
>> Hi all --
>>
>> In principle, this process flow is fine for spin-on-dopants.  However --
>> in this case, there is concern about the solvent in this material.
>>  2-ethoxyethanol is one of the family of ethylene glycol ethers that has
>> been phased out of semiconductor fabs because of links to human reproductive
>> problems, such as miscarriages in women and infertility in men.  In fact, it
>> is getting increasingly more difficult to find materials such as these, at
>> least in the US, because of this.  Can you use a comparable material based
>> on an alcohol or propylene glycol ether solvent?  If so, we could
>> immediately approve it.
>>
>> Mary
>>
>>
>> Mahnaz Mansourpour wrote:
>>
>>> Process flow for the spin-on-dopant.
>>>
>>> mahnaz
>>>
>>>
>>> -------- Original Message --------
>>> Subject:        Process flow for the Boron Spin-on dopant
>>> Date:   Fri, 25 Jul 2008 10:17:20 -0700 (PDT)
>>> From:   jim kruger <jimkruger at yahoo.com>
>>> To:     Mahnaz <mahnaz at snf.stanford.edu>
>>> CC:     Mohamed Hilali <mohamed at twincreekstechnologies.com>, Aditya
>>> Agarwal <aditya at twincreekstechnologies.com>, Kathy Jackson <
>>> kj.jackson at comcast.net>
>>>
>>>
>>>
>>> Process flow for Born Spin-on dopant.
>>>
>>> spin on Headway
>>>
>>> hot plate bake 200 C ,2 minutes.
>>>
>>> RTAgaas for activation  (900 C?  30 sec?).
>>>
>>> 6:1 BOE for strip in WBgeneral of WBgaas
>>>
>>> STS PECVD nitride
>>>
>>> Litho, wet etch
>>>
>>> Metal Dep (Innotec)
>>>
>>> Litho, wet etch
>>>
>>> Metal Dep backside (Innotec)
>>>
>>> End
>>>
>>>
>>> Thanks,
>>>
>>> jim
>>>
>>>
>>>
>>>
>>
>>
>> --
>> Mary X. Tang, Ph.D.
>> Stanford Nanofabrication Facility
>> CIS Room 136, Mail Code 4070
>> Stanford, CA  94305
>> (650)723-9980
>> mtang at stanford.edu
>> http://snf.stanford.edu
>>
>>
>
-------------- next part --------------
An HTML attachment was scrubbed...
URL: <http://snf.stanford.edu/pipermail/specmat/attachments/20080729/b9e4347e/attachment.html>
-------------- next part --------------
A non-text attachment was scrubbed...
Name: PS3020 (B216 Boron SOD).pdf
Type: application/pdf
Size: 40884 bytes
Desc: not available
URL: <http://snf.stanford.edu/pipermail/specmat/attachments/20080729/b9e4347e/attachment.pdf>


More information about the specmat mailing list