[Fwd: Process flow for the Boron Spin-on dopant]

[Mohamed Hilali]

Hi Mary,

Yes, the wet etch in the process below is standard chemical processing. I
should receive this spin-on dopant next week. I will get the label and
barcode for storage. It is better to store this spin-on dopant in a
refrigerator to preserve longer shelf-life. It's going to be a 125 ml
bottle, so it should take little space.

Thank you very much.

Regards,
Mohamed Hilali


On Tue, Jul 29, 2008 at 1:02 PM, Mary Tang <mtang at stanford.edu> wrote:

> Excellent -- Thanks!  By the way, I'm presuming that by "wet etch" in your
> process description below you mean some sort of standard chemical processing
> at wbgeneral or wbgaas.
> Please have your chemical delivered to SNF/CIS shipping & receiving,
> directed to your attention, with your contact info.  Make sure to obtain a
> yellow label and barcode from Mahnaz (or Ed or me).  Your chemical should be
> stored with other flammables (storage class "L") -- what is the storage
> temperature?  And please make sure to dispose of hazardous waste in an
> appropriate manner.
>
> Mary
>
> Mohamed Hilali wrote:
>
>> I apologize. I forgot to attach the MSDS in my last email. It's attached
>> to this one.
>>
>> Thank you.
>>
>> Mohamed Hilali
>>
>> On Tue, Jul 29, 2008 at 12:40 PM, Mohamed Hilali <
>> mohamed at twincreekstechnologies.com <mailto:
>> mohamed at twincreekstechnologies.com>> wrote:
>>
>>    Hi,
>>
>>    I found another boron spin-on dopant from the same company. This
>>    one uses isopropyl alcohol as the solvent. These precursors tend
>>    to give it a somewhat shorter shelf-life compared with the
>>    ethylene glycol ethers, but it is still long enough for our purposes.
>>
>>    I have attached the MSDS for your approval. The process flow is
>>    exactly the same as before.
>>
>>    Thank you very much.
>>
>>    Regards,
>>
>>    Mohamed Hilali
>>    Twin Creeks Technologies, Inc
>>
>>    Tel: 408-507-1649
>>
>>
>>
>>    On Fri, Jul 25, 2008 at 11:18 AM, Mary Tang <mtang at stanford.edu
>>    <mailto:mtang at stanford.edu>> wrote:
>>
>>        Hi all --
>>
>>        In principle, this process flow is fine for spin-on-dopants.
>>         However -- in this case, there is concern about the solvent
>>        in this material.  2-ethoxyethanol is one of the family of
>>        ethylene glycol ethers that has been phased out of
>>        semiconductor fabs because of links to human reproductive
>>        problems, such as miscarriages in women and infertility in
>>        men.  In fact, it is getting increasingly more difficult to
>>        find materials such as these, at least in the US, because of
>>        this.  Can you use a comparable material based on an alcohol
>>        or propylene glycol ether solvent?  If so, we could
>>        immediately approve it.
>>
>>        Mary
>>
>>
>>        Mahnaz Mansourpour wrote:
>>
>>            Process flow for the spin-on-dopant.
>>
>>            mahnaz
>>
>>
>>            -------- Original Message --------
>>            Subject:        Process flow for the Boron Spin-on dopant
>>            Date:   Fri, 25 Jul 2008 10:17:20 -0700 (PDT)
>>            From:   jim kruger <jimkruger at yahoo.com
>>            <mailto:jimkruger at yahoo.com>>
>>            To:     Mahnaz <mahnaz at snf.stanford.edu
>>            <mailto:mahnaz at snf.stanford.edu>>
>>            CC:     Mohamed Hilali <mohamed at twincreekstechnologies.com
>>            <mailto:mohamed at twincreekstechnologies.com>>, Aditya
>>            Agarwal <aditya at twincreekstechnologies.com
>>            <mailto:aditya at twincreekstechnologies.com>>, Kathy Jackson
>>            <kj.jackson at comcast.net <mailto:kj.jackson at comcast.net>>
>>
>>
>>
>>            Process flow for Born Spin-on dopant.
>>
>>            spin on Headway
>>
>>            hot plate bake 200 C ,2 minutes.
>>
>>            RTAgaas for activation  (900 C?  30 sec?).
>>
>>            6:1 BOE for strip in WBgeneral of WBgaas
>>
>>            STS PECVD nitride
>>
>>            Litho, wet etch
>>
>>            Metal Dep (Innotec)
>>
>>            Litho, wet etch
>>
>>            Metal Dep backside (Innotec)
>>
>>            End
>>
>>
>>            Thanks,
>>
>>            jim
>>
>>
>>
>>
>>
>>        --        Mary X. Tang, Ph.D.
>>        Stanford Nanofabrication Facility
>>        CIS Room 136, Mail Code 4070
>>        Stanford, CA  94305
>>        (650)723-9980
>>        mtang at stanford.edu <mailto:mtang at stanford.edu>
>>        http://snf.stanford.edu
>>
>>
>>
>>
>
> --
> Mary X. Tang, Ph.D.
> Stanford Nanofabrication Facility
> CIS Room 136, Mail Code 4070
> Stanford, CA  94305
> (650)723-9980
> mtang at stanford.edu
> http://snf.stanford.edu
>
>
-------------- next part --------------
An HTML attachment was scrubbed...
URL: <http://snf.stanford.edu/pipermail/specmat/attachments/20080730/61952cbb/attachment.html>