From liuzh at stanford.edu  Mon Jun  2 10:31:50 2008
From: liuzh at stanford.edu (Zihong (Bill) Liu)
Date: Mon, 2 Jun 2008 10:31:50 -0700
Subject: 3-Aminopropyltriethoxysilane (APTES)
Message-ID: <20080602173145.9AF1860F1F4@smtp3.stanford.edu>

Hi,

 

I am considering bringing a wafer covered with APTES monolayer into SNF for
photolithography and Mary said this should be fine. For the formal approval,
here is the details:

1. My contact information:

Zihong (Bill) Liu

Coral login: billliu

Phone: 650-862-5521

Email:  <mailto:liuzh at stanford.edu> liuzh at stanford.edu

PI: Prof. Yoshio Nishi and Prof. Zhenan Bao

 

2. The chemical or material: 3-Aminopropyltriethoxysilane (APTES)

CAS number: 919-30-2

MSDS attached.

 

3. Vendor/manufacturer info: 

Gelest, Inc., 11 East Steel Road, Morrisville, PA 19067
TEL: (215)547-1015 * FAX (215)547-2484

 

4. Process Flow:

Attached.

 

5. Form: it is a monolayer on a silicon oxide wafer. No storage needed.

 

Thank you very much!

Sincerely, 

 

Zihong (Bill) Liu

====================================================

Ph.D. Candidate, 

Department of Electrical Engineering,

Center for Integrated Systems, CIS-018,

420 Via Palou, Stanford University,

Stanford, CA 94305

 

Office: CIS-018 & Stauffer III-09, Stanford University;

Phone: 650-725-4185 (CIS-018); 650-725-5403 (Stauffer III-09);

Mobile: 650-862-5521

Email: liuzh at stanford.edu

====================================================

 

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From aditya at twincreekstechnologies.com  Mon Jun  2 15:38:23 2008
From: aditya at twincreekstechnologies.com (Aditya Agarwal)
Date: Mon, 2 Jun 2008 15:38:23 -0700
Subject: Fwd: protocol question
In-Reply-To: <20080602153538.w1fenu22680c4ck0@webmail.stanford.edu>
References: <413524860806021524h4796a98ai1cb6b4a068a16498@mail.gmail.com>
	 <20080602153538.w1fenu22680c4ck0@webmail.stanford.edu>
Message-ID: <413524860806021538sc2dca96rcdd7999eb56456a7@mail.gmail.com>

Hello, could you please advise on my question below, originally to Maurice.
thanks.
aditya

---------- Forwarded message ----------
From: <maurice at stanford.edu>
Date: Mon, Jun 2, 2008 at 3:35 PM
Subject: Re: protocol question
To: Aditya Agarwal <aditya at twincreekstechnologies.com>


I am not sure.  I am going to refer you to specmat for that question.

specmat at snf.stanford.edu

-m



Quoting Aditya Agarwal <aditya at twincreekstechnologies.com>:

 Hi Maurice,
> I have some Si wafers that have had a TiN deposited at UHV--the wafers are
> CMOS clean. I would like to put some Al on top of the TiN.  What cleaning
> and which bench do you recommend ?
> thanks.
> a.
>
>
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From sales at fabsurplus.com  Tue Jun  3 21:34:02 2008
From: sales at fabsurplus.com (SDI Semiconductor Instruments)
Date: Wed, 4 Jun 2008 04:34:02 +0000 (GMT)
Subject: SDI/FABSURPLUS NEWS JUNE 2008
Message-ID: <25345564.1212556048494.JavaMail.root@server1.fabsurplus.com>

SDI/FABSURPLUS NEWS JUNE 2008
*****************************

June Message from Steve Howe, SDI-Fabsurplus CEO and owner
**********************************************************

"Dear Friends and Clients,

"I'm currently in San Antonio, Texas touring our worldwide network of offices and agents, and will be continuing on an equipment sourcing trip to personally source-inspect more quality used equipment for re-sale via our market place at www.fabsurplus.com. After 10 years in the business, I never get tired of searching for the best equipment deals to offer our many clients.

"This month, SDI-Fabsurplus has expanded it's network of sales agents to include Joseph Mazzotta, who has been appointed EMEA Sales manager. Joseph is based in Florence, Italy and can be e-mailed at joseph at fabsurplus.com.

"SDI-Fabsurplus is continuing improvements to our website functionality , managed by our newly-appointed software development manager, Antonio Negrini, formally of Microsoft Corp., who is coordinating development of our SDI "dataNET" equipment re-marketing software.

"If you want to help Antonio, your suggestions and feedback on how we can improve our services and help you to buy Semiconductor Manufacturing and related equipment would be most welcome. Please send you comments and suggestions via e-mail to anegrini at fabsurplus.com

"Through our "Partnership to Purchase" initiative , SDI-Fabsurplus now offers the possibility to forward-finance equipment purchases up to the $1M USD level to those of our clients who can place non-refundable deposits, and we are especially interested in attracting business with clients needing regularly repeated financing at the $100,000 USD level.

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Best wishes and I look forward to hearing from you all soon."

Sincerely, Stephen Howe (Owner)

Our current network of agents and offices
*****************************************

Stephen Howe (SDI Fabsurplus Italy- World Headquarters) showe at fabsurplus.com
Joseph mazzotta (Sales manager, EMEA) joseph at fabsurplus.com
Ollie Dunne and Michael Fortune (SDI Fabsurplus Ireland) ollie.dunne at fabsurplus.com
Randall Copeland (Sales Director, SDI Fabsurplus LLC) Portland, Oregon support at fabsurplus.com
Brandon Newell (West Coast Sales Manager , SDI Fabsurplus LLC) San Francisco, CA brandon at fabsurplus.com
Chris Norton (East Coast Sales Manager , SDI Fabsurplus LLC) Boston, MA chris at fabsurplus.com

Interested to become a fabsurplus.com representative ? E-mail us your CV today at info at fabsurplus.com

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***************************************

http://www.fabsurplus.com/sites/nikon_stepper_refurbishment.html
FABSURPLUS.COM Announces In-House Enhanced Re-Manufacturing of Advanced
Nikon Silicon Wafer Photolithography Step and Scan Equipment
SDI-Fabsurplus can now offer full support for enhancement, removal,
refurbishment, installation and demonstration of Nikon steppers of
i-line models up to i14 and earlier DUV systems.
All systems can be demonstrated at SDI-Fabsurplus's new refurbishment
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This new achievement complements our established refurbishment
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Check out any items of equipment we own, located at our warehouses in Rome, Italy and Dublin, Ireland. 
A full list appears at the following link:-
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PRICED AGGRESIVELY FOR A QUICK SALE. PLEASE ENQUIRE FOR DETAILS

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For details on the above 3 items, contact Randall copeland at 508-747-0459 in Oregon or e-mail support at fabsurplus.com

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20253 ASML XT1700iF DUV Scanner for sale by fabsurplus.com
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Any of these Nikon tools listed above can be offered completely refurbished and operational to OEM specifications as required.

11248 Completely remanufactured Gasonics L3510 for sale by fabsurplus.com
http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=11248

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For questions or to schedule an inspection on any of the 9 items listed above please contact:
showe at fabsurplus.com	

WANTED FOR PURCHASE
*******************

KLA 6420
KARL SUSS MA200 or MA150 aligner, CE marked
SEZ 203 Spin Etcher 6"
Disco DFD 651 Dicing Saw
KNS 4123 wedge Bonders
KNS Maxum Bonders
Orthodyne 360C,360CH or 360CHD heavy wire Bonders
PVA Conformal Coating Machine
RAD 2000 UV machine

SELL YOUR SURPLUS EQUIPMENT
If you have equipment that is in good or excellent condition and you would like SDI/Fabsurplus to assist you in selling it please send the following list of requirements and SDI/Fabsurplus will sell your items at no charge to you:

Manufacture:
Model:
Vintage:
Condition:
Configuration: 
Warranty (If any):
Location:
Pictures:
Lowest acceptable price:

The equipment can now also be posted directly to our website. Send a mail to anegrini at fabsurplus.com and ask us for a username and a password and we will enable acess to our website to post items.

Thank you,

Stephen Howe 
CEO, SDI-Fabsurplus Group
c/o SDI Semiconductor Instruments Srl 
Via Rocco Galdieri, 6 
Napoli 80123 
Italy 
Office: (Naples) Italy (39) 081 575 0506
Home: (Naples) Italy (39) 081 598 3133
Tech Center: (Avezzano) Italy (39) 0863 50 90 50
Mobile: Italy (39) 335 710 7756 
Fax: Italy (39) 066 051 3344
showe at fabsurplus.com
Skype: Stephencshowe
http://www.fabsurplus.com
A MEMBER OF SEMI

Joseph Mazzotta
Sales Manager EMEA
SDI Semiconductor Instruments Srl
Florence
Italy
joseph at fabsurplus.com
Office: Italy (39) 055 9868366
Mobile: Italy (39) 347 0871703
Fax: Italy (39) 066 051 3344

Ollie Dunne
Managing Director
SDI Semiconductor Instruments Ireland Ltd.
Trim, Co. Meath, Ireland
Phone: (353) 4694 37097
Mobile: (353) 872 985 561
Fax: (353) 4694 37113
ollie.dunne at fabsurplus.com

Michael Fortune
Sales Manager 
SDI Semiconductor Instruments Ireland Ltd.
Trim, Co. Meath, Ireland
Phone: (353) 4694 83440
Mobile: (353) 879 915 0198
Fax: (353) 4694 37113
michael.fortune at fabsurplus.com

Randall Copeland
Sales Director, N. America  
SDI Fabsurplus LLC 
Portland, Oregon 
Phone: (1) 503 523 8795
support at fabsurplus.com

Brandon Newell 
Sales Manager, West Coast
SDI Fabsurplus LLC
San Francisco, CA 
Phone: (1) 415 286 1063
brandon at fabsurplus.com

Chris Norton
Sales Manager, East Coast
SDI Fabsurplus LLC
Orleans, MA 02653-4833
USA 
chris at fabsurplus.com


www.Fabsurplus.com 

Important Notice: This message is intended for the attention of the
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If you have received this message in error please be aware that the sender
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From jwc at snf.stanford.edu  Thu Jun  5 12:46:33 2008
From: jwc at snf.stanford.edu (James Conway)
Date: Thu, 05 Jun 2008 12:46:33 -0700
Subject: Headway spinner
In-Reply-To: <72F72367-B6BE-4BB2-8C42-24C8FC247C2A@stanford.edu>
References: <72F72367-B6BE-4BB2-8C42-24C8FC247C2A@stanford.edu>
Message-ID: <48484299.9070708@snf.stanford.edu>

If you have approval from SPEC MAT committee for your material you can 
run this material on headway.

Here is the current announcement:

*ANNOUNCEMENT:  "Take A Spin with Me" -- Resist Handling Training on the 
Headway Coater.
*
Greetings SNF Lab Users,

I will be conducting my next *"Take A Spin with Me" *training class 
Tuesday June 10th and 24th , 2008 from 10:15 AM  - 12:30 PM. There is a 
sign up sheet posted on the white board in my office if you desire to 
sign up in advance.

This is a great opportunity for you to get acquainted with the specific 
points to employ when working with our Ebeam or Optical Resist materials 
in order to obtain high quality thin film coatings over your wafers for 
Electron Beam, Scanning Probe (SPL), and Optical Lithography. In these 
applications accurate control of polymer thickness is important in order 
to obtain consistent high quality lithography results.

We will be conducting this training on the Headway Spin Coater.  Users 
attending this session will gain their qualification on this tool and 
also learn to perform thin film measurements on the Nanospec TFA 
measurement tool.
This is a Hands-On Lab Session, please have your substrates clean and 
ready to coat on the Headway Coater.

Class Schedule:

10:15 - 11:00 I will start with substrate cleans on WET BENCH NONMETAL 
performing Pirhana substrate cleans and HF etching of the intrinsic 
native oxide on Silicon wafers.  All users must have their substrates 
cleaned and ready to go for spinning by the session time; either coming 
out of the 150 degree Singe oven, or if you are working on oxides or 
nitrides, coming out of the YES HMDS Prime oven directly.

11:00 - 12:00 We can apply what ever Ebeam or Optical Resist system you 
desire for your work.

12:00 - 12:30 Thin Film Measurements on the Nanospec Thin Film Analyzer

All interested parties are welcome to attend this session.
Thank you for your interest in Ebeam and Optical Lithography at Stanford 
Nanofabrication Facility,

James W. Conway
Ebeam Technology Group
Stanford Nanofabrication Facility
650-725-7075  office hour Tuesday - Friday 8:30 - 9:30 AM CIS 31


Dan Daranciang wrote:
> Hi James,
>
> I'm a student of Aaron Lindenberg's in MSE. I'm interested in using 
> the Headway spinner to spincoat a thin film.
>
> My material is BaTiO3 nanoparticles, and my substrate is Si. I will 
> most likely be dissolving the BaTiO3 in ethanol.
>
> Would I be able to run this on the Headway spinner? Thanks.
>
> -- 
> Dan Daranciang
> Lindenberg Group, Materials Science and Engineering, Stanford University
>
> 2575 Sand Hill Rd. MS 69
> Menlo Park, CA 94025
> 650-926-2064 (office)
> 650-926-1725 (lab)
> 650-926-1720 (fax)
>
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From daranciang at stanford.edu  Thu Jun  5 13:01:07 2008
From: daranciang at stanford.edu (Dan Daranciang)
Date: Thu, 5 Jun 2008 13:01:07 -0700
Subject: Headway spinner
In-Reply-To: <48484299.9070708@snf.stanford.edu>
References: <72F72367-B6BE-4BB2-8C42-24C8FC247C2A@stanford.edu> <48484299.9070708@snf.stanford.edu>
Message-ID: <22003E22-C2DF-4C51-B2E1-C1559A85CE71@stanford.edu>

Hi,

Would it be okay to run BaTiO3 nanoparticles in ethanol on the Headway  
spinner? the substrate is just Si.

Thanks.

--
Dan Daranciang
Lindenberg Group, Materials Science and Engineering, Stanford University

2575 Sand Hill Rd. MS 69
Menlo Park, CA 94025
650-926-2064 (office)
650-926-1725 (lab)
650-926-1720 (fax)

On Jun 5, 2008, at 12:46 PM, James Conway <jwc at snf.stanford.edu> wrote:

> If you have approval from SPEC MAT committee for your material you  
> can run this material on headway.
>
> Here is the current announcement:
>
> ANNOUNCEMENT:  "Take A Spin with Me" -- Resist Handling Training on  
> the Headway Coater.
>
> Greetings SNF Lab Users,
>
> I will be conducting my next "Take A Spin with Me" training class  
> Tuesday June 10th and 24th , 2008 from 10:15 AM  - 12:30 PM. There  
> is a sign up sheet posted on the white board in my office if you  
> desire to sign up in advance.
>
> This is a great opportunity for you to get acquainted with the  
> specific points to employ when working with our Ebeam or Optical  
> Resist materials in order to obtain high quality thin film coatings  
> over your wafers for Electron Beam, Scanning Probe (SPL), and  
> Optical Lithography. In these applications accurate control of  
> polymer thickness is important in order to obtain consistent high  
> quality lithography results.
>
> We will be conducting this training on the Headway Spin Coater.   
> Users attending this session will gain their qualification on this  
> tool and also learn to perform thin film measurements on the  
> Nanospec TFA measurement tool.
> This is a Hands-On Lab Session, please have your substrates clean  
> and ready to coat on the Headway Coater.
>
> Class Schedule:
>
> 10:15 - 11:00 I will start with substrate cleans on WET BENCH  
> NONMETAL performing Pirhana substrate cleans and HF etching of the  
> intrinsic native oxide on Silicon wafers.  All users must have their  
> substrates cleaned and ready to go for spinning by the session time;  
> either coming out of the 150 degree Singe oven, or if you are  
> working on oxides or nitrides, coming out of the YES HMDS Prime oven  
> directly.
>
> 11:00 - 12:00 We can apply what ever Ebeam or Optical Resist system  
> you desire for your work.
>
> 12:00 - 12:30 Thin Film Measurements on the Nanospec Thin Film  
> Analyzer
>
> All interested parties are welcome to attend this session.
> Thank you for your interest in Ebeam and Optical Lithography at  
> Stanford Nanofabrication Facility,
>
> James W. Conway
> Ebeam Technology Group
> Stanford Nanofabrication Facility
> 650-725-7075  office hour Tuesday - Friday 8:30 - 9:30 AM CIS 31
>
>
> Dan Daranciang wrote:
>> Hi James,
>>
>> I'm a student of Aaron Lindenberg's in MSE. I'm interested in using  
>> the Headway spinner to spincoat a thin film.
>>
>> My material is BaTiO3 nanoparticles, and my substrate is Si. I will  
>> most likely be dissolving the BaTiO3 in ethanol.
>>
>> Would I be able to run this on the Headway spinner? Thanks.
>>
>> -- 
>> Dan Daranciang
>> Lindenberg Group, Materials Science and Engineering, Stanford  
>> University
>>
>> 2575 Sand Hill Rd. MS 69
>> Menlo Park, CA 94025
>> 650-926-2064 (office)
>> 650-926-1725 (lab)
>> 650-926-1720 (fax)
>>
>
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From mtang at stanford.edu  Thu Jun  5 13:02:35 2008
From: mtang at stanford.edu (Mary Tang)
Date: Thu, 05 Jun 2008 13:02:35 -0700
Subject: Headway spinner
In-Reply-To: <48484299.9070708@snf.stanford.edu>
References: <72F72367-B6BE-4BB2-8C42-24C8FC247C2A@stanford.edu> <48484299.9070708@snf.stanford.edu>
Message-ID: <4848465B.3040708@stanford.edu>

Hi Dan --

As James indicates, a SpecMat request is required for new materials such 
as this.  That said, we do not allow nanoparticles in solution at the 
headway station because of the possibility of cross-contamination 
(solutions will aerosolize.)  We do have a rather crude, but functional 
spin coater outside the lab where this kind of processing can be done, 
if this works for you.  Let us know your specific requirements.

Mary/SpecMat

James Conway wrote:
> If you have approval from SPEC MAT committee for your material you can 
> run this material on headway.
>
> Here is the current announcement:
>
> *ANNOUNCEMENT:  "Take A Spin with Me" -- Resist Handling Training on 
> the Headway Coater.
> *
> Greetings SNF Lab Users,
>
> I will be conducting my next *"Take A Spin with Me" *training class 
> Tuesday June 10th and 24th , 2008 from 10:15 AM  - 12:30 PM. There is 
> a sign up sheet posted on the white board in my office if you desire 
> to sign up in advance.
>
> This is a great opportunity for you to get acquainted with the 
> specific points to employ when working with our Ebeam or Optical 
> Resist materials in order to obtain high quality thin film coatings 
> over your wafers for Electron Beam, Scanning Probe (SPL), and Optical 
> Lithography. In these applications accurate control of polymer 
> thickness is important in order to obtain consistent high quality 
> lithography results.
>
> We will be conducting this training on the Headway Spin Coater.  Users 
> attending this session will gain their qualification on this tool and 
> also learn to perform thin film measurements on the Nanospec TFA 
> measurement tool.
> This is a Hands-On Lab Session, please have your substrates clean and 
> ready to coat on the Headway Coater.
>
> Class Schedule:
>
> 10:15 - 11:00 I will start with substrate cleans on WET BENCH NONMETAL 
> performing Pirhana substrate cleans and HF etching of the intrinsic 
> native oxide on Silicon wafers.  All users must have their substrates 
> cleaned and ready to go for spinning by the session time; either 
> coming out of the 150 degree Singe oven, or if you are working on 
> oxides or nitrides, coming out of the YES HMDS Prime oven directly.
>
> 11:00 - 12:00 We can apply what ever Ebeam or Optical Resist system 
> you desire for your work.
>
> 12:00 - 12:30 Thin Film Measurements on the Nanospec Thin Film Analyzer
>
> All interested parties are welcome to attend this session.
> Thank you for your interest in Ebeam and Optical Lithography at 
> Stanford Nanofabrication Facility,
>
> James W. Conway
> Ebeam Technology Group
> Stanford Nanofabrication Facility
> 650-725-7075  office hour Tuesday - Friday 8:30 - 9:30 AM CIS 31
>
>
> Dan Daranciang wrote:
>> Hi James,
>>
>> I'm a student of Aaron Lindenberg's in MSE. I'm interested in using 
>> the Headway spinner to spincoat a thin film.
>>
>> My material is BaTiO3 nanoparticles, and my substrate is Si. I will 
>> most likely be dissolving the BaTiO3 in ethanol.
>>
>> Would I be able to run this on the Headway spinner? Thanks.
>>
>> -- 
>> Dan Daranciang
>> Lindenberg Group, Materials Science and Engineering, Stanford University
>>
>> 2575 Sand Hill Rd. MS 69
>> Menlo Park, CA 94025
>> 650-926-2064 (office)
>> 650-926-1725 (lab)
>> 650-926-1720 (fax)
>>


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu




From mtang at stanford.edu  Thu Jun  5 21:12:44 2008
From: mtang at stanford.edu (Mary Tang)
Date: Thu, 05 Jun 2008 21:12:44 -0700
Subject: CVD of nitride layer onto organosilicate glass
In-Reply-To: <20080528131558.jkcdkn064kkc8o4k@webmail.stanford.edu>
References: <20080528131558.jkcdkn064kkc8o4k@webmail.stanford.edu>
Message-ID: <4848B93C.1050603@stanford.edu>

Hi Andrew --

After consulting with Maurice, I think there was some confusion about 
the equipment choice.  I believe Maurice thought you were asking about 
the LPCVD Tylan nitride system.  This is a high temperature-activated 
CVD deposition for CMOS clean wafers.  The temperature is 750-850C -- 
typically, organosilicate glasses aren't subject to those temperatures 
-- and generally these glasses are restricted to the metal and 
post-metal processing of devices (i.e., "semiclean" at SNF).  The LPCVD 
furnace is question is restricted to pre-metal CMOS (i,e,m "clean" at 
SNF.)  Thus, his concern.

Looking through the Coral history, it looks like the Dauskardt group has 
not used the LPCVD nitride system.  Several group members have, however, 
used the sts PECVD system.  This system uses plasma to activate the 
deposition process -- and so, the deposition is at about 300-350 C, 
typically.  This would be consistent with use of organosilicate materials. 

SpecMat approval is not required for sts dep -- The sts is a 
"gold-contaminated" tool.and organosilicate glasses are OK'ed for 
processing in this class of tools.  I believe this information is on the 
website, but I'd be first to admit that it may not be easy to find (and 
as webmaster, I should know.)  As we're in the process of redesigning 
it, your suggestions and advice on how to improve it would be appreciated.


Mary

Andrew Thiel wrote:
> Hello,
>
> I'm a graduate student in materials science interested in using CVD at 
> SNF.  I have a silicon wafer topped with a thin film of an 
> organosilicate glass, and I'd simply like a silicon nitride film 
> deposited onto it.  My research group (Dauskardt in MSE) has actually 
> done this exact deposition at SNF several times over the past couple 
> years without any issues, but the current manager of CVD at SNF 
> (Maurice Stevens) is reluctant to allow an organosilicate glass into 
> any chamber without the permission of SpecMat.
>
> The specific organosilicate glass I would be introducing into the CVD 
> chamber is DiEthoxyMethylSilane (DEMS).  My research group has 
> conducted thermal studies and found this material to stable up to 
> temperatures of at least 400 C.
>
> Please let me know of any other additional information you may need.
>
> Thanks,
> Andrew



From cmjha at stanford.edu  Thu Jun  5 23:12:15 2008
From: cmjha at stanford.edu (Chandra Mohan Jha)
Date: Thu, 5 Jun 2008 23:12:15 -0700
Subject: Request for special material processing in SNF
Message-ID: <000701c8c79c$44550fb0$ccff2f10$@edu>

Dear Committee members (Special Materials)

 

As advised by Mary, I would like to put forward a request for special
material processing in SNF. We are going to use fabrication process which
involves AlN. We will get AlN deposited from UC Berkeley and do the
remaining steps in SNF. I have attached a ppt file describing the process
flow. I have also attached one paper that describes the process steps which
we are going to follow closely, though not exactly. I have attached another
paper which describes the process of depositing AlN in UC Berkeley. We are
planning to start processing these wafers in SNF from next week. Please let
me know if you need more information.

 

Thanks,

Chandra M Jha

Kenny Group

Microstructures and Sensors Lab

Mechanical Engineering

 

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From athiel at stanford.edu  Fri Jun  6 09:24:46 2008
From: athiel at stanford.edu (Andrew Thiel)
Date: Fri, 06 Jun 2008 09:24:46 -0700
Subject: CVD of nitride layer onto organosilicate glass
In-Reply-To: <4848B93C.1050603@stanford.edu>
References: <20080528131558.jkcdkn064kkc8o4k@webmail.stanford.edu>
	<4848B93C.1050603@stanford.edu>
Message-ID: <20080606092446.w4y71hp5ugccscs4@webmail.stanford.edu>

Yeah, I guess there certainly was some confusion.  Now that we're all  
clear, would it be possible for someone at SNF to perform this nitride  
deposition for me?  I'd like a film of silicon nitride thin enough to  
be transparent deposited onto three of my organosilicate glass  
specimens.  Please let me know how this may be arranged.

Thank you,
Andrew

Quoting Mary Tang <mtang at stanford.edu>:

> Hi Andrew --
>
> After consulting with Maurice, I think there was some confusion about
> the equipment choice.  I believe Maurice thought you were asking about
> the LPCVD Tylan nitride system.  This is a high temperature-activated
> CVD deposition for CMOS clean wafers.  The temperature is 750-850C --
> typically, organosilicate glasses aren't subject to those temperatures
> -- and generally these glasses are restricted to the metal and
> post-metal processing of devices (i.e., "semiclean" at SNF).  The LPCVD
> furnace is question is restricted to pre-metal CMOS (i,e,m "clean" at
> SNF.)  Thus, his concern.
>
> Looking through the Coral history, it looks like the Dauskardt group
> has not used the LPCVD nitride system.  Several group members have,
> however, used the sts PECVD system.  This system uses plasma to
> activate the deposition process -- and so, the deposition is at about
> 300-350 C, typically.  This would be consistent with use of
> organosilicate materials. SpecMat approval is not required for sts dep
> -- The sts is a "gold-contaminated" tool.and organosilicate glasses are
> OK'ed for processing in this class of tools.  I believe this
> information is on the website, but I'd be first to admit that it may
> not be easy to find (and as webmaster, I should know.)  As we're in the
> process of redesigning it, your suggestions and advice on how to
> improve it would be appreciated.
>
>
> Mary
>
> Andrew Thiel wrote:
>> Hello,
>>
>> I'm a graduate student in materials science interested in using CVD  
>>  at SNF.  I have a silicon wafer topped with a thin film of an   
>> organosilicate glass, and I'd simply like a silicon nitride film   
>> deposited onto it.  My research group (Dauskardt in MSE) has   
>> actually done this exact deposition at SNF several times over the   
>> past couple years without any issues, but the current manager of   
>> CVD at SNF (Maurice Stevens) is reluctant to allow an   
>> organosilicate glass into any chamber without the permission of   
>> SpecMat.
>>
>> The specific organosilicate glass I would be introducing into the   
>> CVD chamber is DiEthoxyMethylSilane (DEMS).  My research group has   
>> conducted thermal studies and found this material to stable up to   
>> temperatures of at least 400 C.
>>
>> Please let me know of any other additional information you may need.
>>
>> Thanks,
>> Andrew




From mtang at stanford.edu  Fri Jun  6 09:34:10 2008
From: mtang at stanford.edu (Mary Tang)
Date: Fri, 06 Jun 2008 09:34:10 -0700
Subject: CVD of nitride layer onto organosilicate glass
In-Reply-To: <20080606092446.w4y71hp5ugccscs4@webmail.stanford.edu>
References: <20080528131558.jkcdkn064kkc8o4k@webmail.stanford.edu>	<4848B93C.1050603@stanford.edu> <20080606092446.w4y71hp5ugccscs4@webmail.stanford.edu>
Message-ID: <48496702.6010003@stanford.edu>

Hi Andrew --

There are a couple of different flavors of nitride available.  Please 
consult with Jeannie Perez, the process staff person in charge of this 
machine for more information.  It would probably be most helpful, if you 
are planning to perform similar processing to what previous Dauskardt 
group members have done, to have the recipe settings and desired film 
properties (thickness, uniformity, refractive index, and stress, if 
appropriate) on hand before consulting with her.

Jeannie is also the person you should contact to become trained and 
qualified on this system.

Let us know if you have further questions --


Mary



Andrew Thiel wrote:
> Yeah, I guess there certainly was some confusion.  Now that we're all 
> clear, would it be possible for someone at SNF to perform this nitride 
> deposition for me?  I'd like a film of silicon nitride thin enough to 
> be transparent deposited onto three of my organosilicate glass 
> specimens.  Please let me know how this may be arranged.
>
> Thank you,
> Andrew
>
> Quoting Mary Tang <mtang at stanford.edu>:
>
>> Hi Andrew --
>>
>> After consulting with Maurice, I think there was some confusion about
>> the equipment choice.  I believe Maurice thought you were asking about
>> the LPCVD Tylan nitride system.  This is a high temperature-activated
>> CVD deposition for CMOS clean wafers.  The temperature is 750-850C --
>> typically, organosilicate glasses aren't subject to those temperatures
>> -- and generally these glasses are restricted to the metal and
>> post-metal processing of devices (i.e., "semiclean" at SNF).  The LPCVD
>> furnace is question is restricted to pre-metal CMOS (i,e,m "clean" at
>> SNF.)  Thus, his concern.
>>
>> Looking through the Coral history, it looks like the Dauskardt group
>> has not used the LPCVD nitride system.  Several group members have,
>> however, used the sts PECVD system.  This system uses plasma to
>> activate the deposition process -- and so, the deposition is at about
>> 300-350 C, typically.  This would be consistent with use of
>> organosilicate materials. SpecMat approval is not required for sts dep
>> -- The sts is a "gold-contaminated" tool.and organosilicate glasses are
>> OK'ed for processing in this class of tools.  I believe this
>> information is on the website, but I'd be first to admit that it may
>> not be easy to find (and as webmaster, I should know.)  As we're in the
>> process of redesigning it, your suggestions and advice on how to
>> improve it would be appreciated.
>>
>>
>> Mary
>>
>> Andrew Thiel wrote:
>>> Hello,
>>>
>>> I'm a graduate student in materials science interested in using CVD 
>>>  at SNF.  I have a silicon wafer topped with a thin film of an  
>>> organosilicate glass, and I'd simply like a silicon nitride film  
>>> deposited onto it.  My research group (Dauskardt in MSE) has  
>>> actually done this exact deposition at SNF several times over the  
>>> past couple years without any issues, but the current manager of  
>>> CVD at SNF (Maurice Stevens) is reluctant to allow an  
>>> organosilicate glass into any chamber without the permission of  
>>> SpecMat.
>>>
>>> The specific organosilicate glass I would be introducing into the  
>>> CVD chamber is DiEthoxyMethylSilane (DEMS).  My research group has  
>>> conducted thermal studies and found this material to stable up to  
>>> temperatures of at least 400 C.
>>>
>>> Please let me know of any other additional information you may need.
>>>
>>> Thanks,
>>> Andrew
>
>


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu




From mtang at stanford.edu  Fri Jun  6 10:30:31 2008
From: mtang at stanford.edu (Mary Tang)
Date: Fri, 06 Jun 2008 10:30:31 -0700
Subject: Request for special material processing in SNF
In-Reply-To: <000701c8c79c$44550fb0$ccff2f10$@edu>
References: <000701c8c79c$44550fb0$ccff2f10$@edu>
Message-ID: <48497437.7030902@stanford.edu>

Hi Chandra --

I'd like to summarize our discussion, for the other SpecMat members.  If 
I understood correctly:

1.  The specific SpecMat request you are submitting is to be able to 
etch AlN as deposited on the AMS system at Berkeley in the Applied 
Materials p5000etch here at SNF.  The p5000etch system metal etch 
chamber is considered "semiclean" so materials etched here need to 
demonstrate they have negligible amounts of heavy metal and alkali metal 
CMOS contaminants.  The AMS is a reactive sputter system, so the main 
concerns of contamination would probably be possible contaminants from 
the chamber itself and cross-contamination from other materials processed.

2.  The HF vapor etch system is considered a "clean" system, so that 
susbtrates containing metals are generally not allowed.  We will refer 
your request for HF vapor etch of your metal-containing substrates to 
Gary Yama, who is the expert on this system.  (Gary?)

3.  The process flow here is not the process you intend to use.  The 
main change is that instead of Pt, using Ti adhesion layer and Al, both 
deposited on gryphon, followed by etching in p5000etch (in case fellow 
SpecMat'ers were concerned about the Pt and etching it.)

When we get a quorum of SpecMat members (Tuesday), we will get back to you.

Thanks,

Mary


Chandra Mohan Jha wrote:
>
> Dear Committee members (Special Materials)
>
>  
>
> As advised by Mary, I would like to put forward a request for special 
> material processing in SNF. We are going to use fabrication process 
> which involves AlN. We will get AlN deposited from UC Berkeley and do 
> the remaining steps in SNF. I have attached a ppt file describing the 
> process flow. I have also attached one paper that describes the 
> process steps which we are going to follow closely, though not 
> exactly. I have attached another paper which describes the process of 
> depositing AlN in UC Berkeley. We are planning to start processing 
> these wafers in SNF from next week. Please let me know if you need 
> more information.
>
>  
>
> Thanks,
>
> Chandra M Jha
>
> Kenny Group
>
> Microstructures and Sensors Lab
>
> Mechanical Engineering
>
>  
>


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu




From cfchiang at stanford.edu  Tue Jun 10 01:13:04 2008
From: cfchiang at stanford.edu (Cathy Chiang)
Date: Tue, 10 Jun 2008 01:13:04 -0700
Subject: Lithography developer
Message-ID: <20080610011304.gt2d5clqlck8gc8w@webmail.stanford.edu>

Hi SNF SpecMat,

My name is Cathy whose Coral ID is cfchiang. In my fabrication process  
I have to use lithography to pattern and etch aluminum nitride.  
However, since aluminum nitride is very likely to be etched using  
general developer, some special developer should be used instead. I am  
writing to ask if there is any suggested developer(s) that has been  
approved by SNF?

Thank you sincerely,
Cathy


From mtang at stanford.edu  Tue Jun 10 13:30:57 2008
From: mtang at stanford.edu (Mary Tang)
Date: Tue, 10 Jun 2008 13:30:57 -0700
Subject: Lithography developer
In-Reply-To: <20080610011304.gt2d5clqlck8gc8w@webmail.stanford.edu>
References: <20080610011304.gt2d5clqlck8gc8w@webmail.stanford.edu>
Message-ID: <484EE481.3010708@stanford.edu>

Hi Cathy --

Are you getting your AlN from Berkeley Microlab?  I believe they do 
patterning there.  Could you ask them what is typically used?  Also, how 
thick is your AlN?  And what kind of feature size were you planning to 
pattern?

Mary

Cathy Chiang wrote:
> Hi SNF SpecMat,
>
> My name is Cathy whose Coral ID is cfchiang. In my fabrication process 
> I have to use lithography to pattern and etch aluminum nitride. 
> However, since aluminum nitride is very likely to be etched using 
> general developer, some special developer should be used instead. I am 
> writing to ask if there is any suggested developer(s) that has been 
> approved by SNF?
>
> Thank you sincerely,
> Cathy


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu




From mahnaz at stanford.edu  Tue Jun 10 16:42:11 2008
From: mahnaz at stanford.edu (Mahnaz Mansourpour)
Date: Tue, 10 Jun 2008 16:42:11 -0700
Subject: [Fwd: New Material]
Message-ID: <484F1153.7000709@stanford.edu>



-------- Original Message --------
Subject: New Material
Date: Tue, 10 Jun 2008 16:14:14 -0700
From: "Mohamed Hilali" <mohamed at twincreekstechnologies.com>
To: mahnaz at snf.stanford.edu



Hi Mahnaz,

I am a new lab member at SNF. I work at Twin Creeks Technologies with 
Aditya Agarwal.  I have attached an MSDS for a new spin-on material 
(FG65) from Filmtronics that I would like to bring in the cleanroom. 
Some of the constituents may be similar to another spin-on dopant 
material (P507) (Filmtronics) that Aditya uses at SNF.

Please let me know if it would be possible to bring this material in the 
SNF cleanroom.

Thank you very much in advance.

Kind regards,

Mohamed Hilali

Twin Creeks Technologies, Inc

Tel: 408-507-1649
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From mtang at stanford.edu  Wed Jun 11 09:11:31 2008
From: mtang at stanford.edu (Mary Tang)
Date: Wed, 11 Jun 2008 09:11:31 -0700
Subject: [Fwd: New Material]
In-Reply-To: <484F1153.7000709@stanford.edu>
References: <484F1153.7000709@stanford.edu>
Message-ID: <484FF933.4040809@stanford.edu>

Hi Mohamed --

These materials are acceptable for use for certain processes in the 
lab.  Do you have a list of equipment and process flow through which you 
wish to process this material?  Or, if you have a process module or 
application note you wish to follow, we could recommend the equipment 
which would be compatible.  Let us know.

Thanks,

Mary

Mahnaz Mansourpour wrote:
>
>
> -------- Original Message --------
> Subject: 	New Material
> Date: 	Tue, 10 Jun 2008 16:14:14 -0700
> From: 	"Mohamed Hilali" <mohamed at twincreekstechnologies.com>
> To: 	mahnaz at snf.stanford.edu
>
>
>
> Hi Mahnaz,
>
> I am a new lab member at SNF. I work at Twin Creeks Technologies with 
> Aditya Agarwal.  I have attached an MSDS for a new spin-on material 
> (FG65) from Filmtronics that I would like to bring in the cleanroom. 
> Some of the constituents may be similar to another spin-on dopant 
> material (P507) (Filmtronics) that Aditya uses at SNF.
>
> Please let me know if it would be possible to bring this material in 
> the SNF cleanroom.
>
> Thank you very much in advance.
>
> Kind regards,
>
> Mohamed Hilali
>
> Twin Creeks Technologies, Inc
>
> Tel: 408-507-1649


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu




From mtang at stanford.edu  Wed Jun 11 15:50:02 2008
From: mtang at stanford.edu (Mary Tang)
Date: Wed, 11 Jun 2008 15:50:02 -0700
Subject: Lithography developer
In-Reply-To: <20080610162153.3ohpf0s34oos8k08@webmail.stanford.edu>
References: <20080610011304.gt2d5clqlck8gc8w@webmail.stanford.edu>	<484EE481.3010708@stanford.edu>	<20080610134533.xtwhn4hq840gsw8g@webmail.stanford.edu> <20080610162153.3ohpf0s34oos8k08@webmail.stanford.edu>
Message-ID: <4850569A.7070804@stanford.edu>

Hi Cathy --

Are you collaborating by any chance with Chandra Ja in the Kenney Lab?  
I understand he is considering etching 1-3 microns of AlN deposited at 
Berkeley as well.  Could you please coordinate between the two of you to 
get more information from your collaborators at Berkeley?

I've contacted Sia Parsa, who's my counterpart at Berkeley.  He did not 
have a lot of specific information about processing of AlN and so 
suggested contacting the researchers who use this film at Berkeley.  So, 
I think there are a couple of processing issues that you should check 
with your Berkeley counterparts:

1.  The AlN etches somewhat in basic solutions, such as developer.  
However, Sia did not know if wet etch patterning of AlN could be done. 
If AlN can be appropriately patterned with wet etching, then this would 
be the easiest method.  However, you'd have to bias your mask if you 
want to define 10 micron lines in 3 micron films.

2.  Alternatively, AlN could be plasma etched in the p5000etch metal 
chamber, if it can be demonstrated that the AlN is CMOS clean.  The 
machine at Berkeley is considered by Sia to be CMOS clean, but they do 
not have data and processing is allowed on Pt-film coated wafers (which 
is not really CMOS clean.)  So, Sia could not say if the materials from 
this system could be considered clean for SNF.  If your counterparts 
have any data on trace metal contamination on AlN films deposited in the 
Berkeley Microlab AMS, it would be greatly appreciated.  If not, then we 
would require that a study be made.  This could be done either at the 
SNL (Rich Chin or Ann Marshal would be the contacts there) or at Evans 
Analytical Group, a commercial provider of analytical services.  
Typically, TXRF is used for contamination studies on surfaces, but a 
bulk film technique might be more appropriate in this case.  Usually, 
these techniques will detect a spectrum of metal contaminants -- the 
contaminants of interest would likely be Pt (since it is introduced to 
the system) and any likely contaminants from the chamber or deposition 
tool itself.  Please check out the Evans Analytical website, which has a 
lot of good information about different analytical methods.

Please work with Chandra to find out this information from your 
collaborators.  It would also be helpful to know if you plan to pattern 
your wafers here at SNF or at Berkeley.  If you want to use the CD-30 
developer here, you should check the compatibility with the resist you 
plan used here.

I suggest that you might consider coming to the next Process Clinic -- 
staff and SpecMat members will be on hand to help with processing and 
materials questions.  This will be 2-4 pm next Monday afternoon, in the 
open cubicle area next to Maureen's office.

Mary

Cathy Chiang wrote:
> Hi Mary,
>
> Sorry but one more bother, do you know with what machine we can do AlN 
> etch in SNF?
>
> Thank you very much,
> Cathy
>
> Quoting Cathy Chiang <cfchiang at stanford.edu>:
>
>> Hi Mary,
>>
>> Thank you for the fast response. Yes, we collaborate with Berkeley and
>> will deposit AlN from their microlab. They use Shipley CD-30 to
>> pattern the feature. In our application, the thickness of AlN is
>> around 1-3 microns. And the feature size will be >200 microns with a
>> minimum line width >10 microns. Attached is the MSDS of Shipley CD-30.
>> Sorry that I have not got an updated version of the MSDS from the
>> company sales representative.
>>
>> Thank you sincerely,
>> Cathy
>


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu




From cmjha at stanford.edu  Wed Jun 11 17:09:05 2008
From: cmjha at stanford.edu (Chandra Mohan Jha)
Date: Wed, 11 Jun 2008 17:09:05 -0700
Subject: Lithography developer
In-Reply-To: <4850569A.7070804@stanford.edu>
References: <20080610011304.gt2d5clqlck8gc8w@webmail.stanford.edu>	<484EE481.3010708@stanford.edu>	<20080610134533.xtwhn4hq840gsw8g@webmail.stanford.edu> <20080610162153.3ohpf0s34oos8k08@webmail.stanford.edu> <4850569A.7070804@stanford.edu>
Message-ID: <000c01c8cc20$86ee40c0$94cac240$@edu>

Hi Mary

Yes we are working together on the same project. 

Chandra


-----Original Message-----
From: Mary Tang [mailto:mtang at stanford.edu] 
Sent: Wednesday, June 11, 2008 3:50 PM
To: Cathy Chiang; cmjha at stanford.edu
Cc: specmat at snf.stanford.edu; Nancy Latta
Subject: Re: Lithography developer

Hi Cathy --

Are you collaborating by any chance with Chandra Ja in the Kenney Lab?  
I understand he is considering etching 1-3 microns of AlN deposited at 
Berkeley as well.  Could you please coordinate between the two of you to 
get more information from your collaborators at Berkeley?

I've contacted Sia Parsa, who's my counterpart at Berkeley.  He did not 
have a lot of specific information about processing of AlN and so 
suggested contacting the researchers who use this film at Berkeley.  So, 
I think there are a couple of processing issues that you should check 
with your Berkeley counterparts:

1.  The AlN etches somewhat in basic solutions, such as developer.  
However, Sia did not know if wet etch patterning of AlN could be done. 
If AlN can be appropriately patterned with wet etching, then this would 
be the easiest method.  However, you'd have to bias your mask if you 
want to define 10 micron lines in 3 micron films.

2.  Alternatively, AlN could be plasma etched in the p5000etch metal 
chamber, if it can be demonstrated that the AlN is CMOS clean.  The 
machine at Berkeley is considered by Sia to be CMOS clean, but they do 
not have data and processing is allowed on Pt-film coated wafers (which 
is not really CMOS clean.)  So, Sia could not say if the materials from 
this system could be considered clean for SNF.  If your counterparts 
have any data on trace metal contamination on AlN films deposited in the 
Berkeley Microlab AMS, it would be greatly appreciated.  If not, then we 
would require that a study be made.  This could be done either at the 
SNL (Rich Chin or Ann Marshal would be the contacts there) or at Evans 
Analytical Group, a commercial provider of analytical services.  
Typically, TXRF is used for contamination studies on surfaces, but a 
bulk film technique might be more appropriate in this case.  Usually, 
these techniques will detect a spectrum of metal contaminants -- the 
contaminants of interest would likely be Pt (since it is introduced to 
the system) and any likely contaminants from the chamber or deposition 
tool itself.  Please check out the Evans Analytical website, which has a 
lot of good information about different analytical methods.

Please work with Chandra to find out this information from your 
collaborators.  It would also be helpful to know if you plan to pattern 
your wafers here at SNF or at Berkeley.  If you want to use the CD-30 
developer here, you should check the compatibility with the resist you 
plan used here.

I suggest that you might consider coming to the next Process Clinic -- 
staff and SpecMat members will be on hand to help with processing and 
materials questions.  This will be 2-4 pm next Monday afternoon, in the 
open cubicle area next to Maureen's office.

Mary

Cathy Chiang wrote:
> Hi Mary,
>
> Sorry but one more bother, do you know with what machine we can do AlN 
> etch in SNF?
>
> Thank you very much,
> Cathy
>
> Quoting Cathy Chiang <cfchiang at stanford.edu>:
>
>> Hi Mary,
>>
>> Thank you for the fast response. Yes, we collaborate with Berkeley and
>> will deposit AlN from their microlab. They use Shipley CD-30 to
>> pattern the feature. In our application, the thickness of AlN is
>> around 1-3 microns. And the feature size will be >200 microns with a
>> minimum line width >10 microns. Attached is the MSDS of Shipley CD-30.
>> Sorry that I have not got an updated version of the MSDS from the
>> company sales representative.
>>
>> Thank you sincerely,
>> Cathy
>


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu




From mahnaz at stanford.edu  Mon Jun 16 10:03:14 2008
From: mahnaz at stanford.edu (Mahnaz Mansourpour)
Date: Mon, 16 Jun 2008 10:03:14 -0700
Subject: SOG material
In-Reply-To: <367f35eb0806122051g56243f10m30f18d3113f8a8aa@mail.gmail.com>
References: <367f35eb0806122051g56243f10m30f18d3113f8a8aa@mail.gmail.com>
Message-ID: <48569CD2.4070708@stanford.edu>

Thank you for the process flow, this email is  to inform you that your 
chemical has been approved. Please come by and get the appropriate 
labels from me and when ready we can get the chemical from the 
refrigerator in the back.
mahnaz

Mohamed Hilali wrote:
> Hi Mahnaz,
>
> Below is the process of how we intend to use the FG65 SOG:
>
> - Spin-on the SOG on a wafer in the Headway spinner
> - Bake on the hot plate at 150-200 degrees C
> - Make manual adhesion or bonding (by hand) to another wafer
> - Bake in the BlueM oven at 400 degrees C
>
> Jim Kruger will be running the spin-on coating of the SOG.
>
> Kind regards,
>
> Mohamed Hilali
>
> Tel: 408-507-1649
>
> Twin Creeks Technologies, Inc


From mtang at stanford.edu  Mon Jun 16 13:03:58 2008
From: mtang at stanford.edu (Mary Tang)
Date: Mon, 16 Jun 2008 13:03:58 -0700
Subject: SOG material
In-Reply-To: <48569CD2.4070708@stanford.edu>
References: <367f35eb0806122051g56243f10m30f18d3113f8a8aa@mail.gmail.com> <48569CD2.4070708@stanford.edu>
Message-ID: <4856C72E.4040506@stanford.edu>

Hi --

Could we get an electronic version of the MSDS for our files?  You may 
have sent before, but I can't seem to find one for this particular 
formulation.  Who makes it?

Thanks,

Mary

Mahnaz Mansourpour wrote:
> Thank you for the process flow, this email is  to inform you that your 
> chemical has been approved. Please come by and get the appropriate 
> labels from me and when ready we can get the chemical from the 
> refrigerator in the back.
> mahnaz
>
> Mohamed Hilali wrote:
>> Hi Mahnaz,
>>
>> Below is the process of how we intend to use the FG65 SOG:
>>
>> - Spin-on the SOG on a wafer in the Headway spinner
>> - Bake on the hot plate at 150-200 degrees C
>> - Make manual adhesion or bonding (by hand) to another wafer
>> - Bake in the BlueM oven at 400 degrees C
>>
>> Jim Kruger will be running the spin-on coating of the SOG.
>>
>> Kind regards,
>>
>> Mohamed Hilali
>>
>> Tel: 408-507-1649
>>
>> Twin Creeks Technologies, Inc


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu




From patricia.carlson at global-fab.com  Tue Jun 17 11:14:45 2008
From: patricia.carlson at global-fab.com (Patricia Carlson)
Date: Tue, 17 Jun 2008 14:14:45 -0400 (EDT)
Subject: Global Fab 17 June Newsletter Equipment and Complete Wafer Fabs
Message-ID: <1102138424369.1101401002153.9044.1.14140546@scheduler>


~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~
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June 17, 2008
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~

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Global Fab Semiconductor LLC


~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~
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From cfchiang at stanford.edu  Sun Jun 22 23:37:59 2008
From: cfchiang at stanford.edu (Cathy Chiang)
Date: Sun, 22 Jun 2008 23:37:59 -0700
Subject: Request for New Chemical Approval- PI-5878G and VM-651
Message-ID: <20080622233759.je3hrejzy8o4wswo@webmail.stanford.edu>

Hi SNF staff,

I am writing to request an approval of bringing polyimide PI-5878G and  
its adhesion promoter VM-651. I have attached my application and their  
MSDS with this email. A proposed fabrication process and the chemical  
application notes are also attached. Please help review and let me  
know what else should I provide for the approval of the chemicals.


Mary,

We are still on our way to check the cleanness of AlN deposited at  
Berkeley. This version of fabrication process assumes the worst case,  
that is the AlN is platinum contaminated. However, if it turns out  
that the AlN is CMOS clean, I would like to alter the fabrication  
steps to make it easily fabricated.

Thank you very much,
Cathy
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From mik73bla at stanford.edu  Fri Jun 27 15:39:43 2008
From: mik73bla at stanford.edu (mik73bla at stanford.edu)
Date: Fri, 27 Jun 2008 15:39:43 -0700
Subject: New Material Request
Message-ID: <20080627153943.g8mhgdjku8cs8cco@webmail.stanford.edu>

To whom it may concern:
Please find attached a word document containing all the information  
pertinent to a new material request, as well as an MSDS in .pdf  
format.  Please do not hestiate to contact me with any questions or  
concerns.

Sincerely,

Michael Langston
650-279-4064
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From senyod at gmail.com  Mon Jun 30 10:38:09 2008
From: senyod at gmail.com (Senyo Dogbe)
Date: Mon, 30 Jun 2008 10:38:09 -0700
Subject: Request for Polysilicon deposition
Message-ID: <c9e581a30806301038j67fda1admcc7ff04a0412db99@mail.gmail.com>

SpecMat,

I would like to ask permission to run a poly silicon deposition process
within temperature range of  600C - 625C (preferably poly600 process) in one
of the poly furnaces. My Substrate is Si wafer with about 30A  Fe catalyst
deposited before CNT growth was done.
1)  The wafer cannot go through cleaning on Wbdiff and I would like get
approval to run my wafer in the furnace (with the help of SNF staff member)
just before the furnace is shut down for cleaning.
2) The thickness of poly film required is about 1um.
The Wafer was processed earlier at SNF (Oxide in Tylan 1 and Fe deposited in
the innotec). The CNT was grown (after the Fe deposition) in a CNT quartz
furnace at Molecular Nanosystems, Inc in Palo Alto. The wafer will not
undergo any further processing at SNF after the poly process.
Thanks
Senyo
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