[Fwd: Re: [Fwd: Process flow for the Boron Spin-on dopant]]

Mary Tang mtang at stanford.edu
Tue Nov 25 16:00:36 PST 2008

Hi all --

Any problems with this?  It looks pretty conventional to me.  Any 
objections to approving it?


-------- Original Message --------
Subject: 	Re: [Fwd: Process flow for the Boron Spin-on dopant]
Date: 	Thu, 20 Nov 2008 13:05:33 -0800
From: 	Mohamed Hilali <mohamed at twincreekstechnologies.com>
To: 	Mary Tang <mtang at stanford.edu>
CC: 	jim kruger <jimkruger at yahoo.com>, Aditya Agarwal 
<aditya at twincreekstechnologies.com>, Kathy Jackson 
<kj.jackson at comcast.net>, specmat at snf.stanford.edu
References: 	<488A0E98.5020208 at stanford.edu> 
<488A1905.5040601 at stanford.edu>

Hi Mary,
I have attached the MSDS of a spin-on glass that I would like to get 
approved to store and use at SNF. The process sequence is shown below.

spin on 700A SOG using Headway

hot plate bake 200 C ,2 minutes.

RTAgaas for annealing  (900 C?  30 sec?).

spin-on dopant using Headway

RTAgaas for activation  (900 C?  30 sec?).

WbGaAs 50:1 HF deglaze

STS PECVD nitride

Litho, wet etch

Metal Dep (Innotec)

Litho, wet etch

Metal Dep backside (Innotec)

Thank you very much.
Mohamed Hilali
Twin Creeks Technologies, Inc
Tel: 408-507-1649

Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
mtang at stanford.edu

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