[Fwd: Re: [Fwd: Process flow for the Boron Spin-on dopant]]
Mary Tang
mtang at stanford.edu
Tue Nov 25 16:00:36 PST 2008
Hi all --
Any problems with this? It looks pretty conventional to me. Any
objections to approving it?
Mary
-------- Original Message --------
Subject: Re: [Fwd: Process flow for the Boron Spin-on dopant]
Date: Thu, 20 Nov 2008 13:05:33 -0800
From: Mohamed Hilali <mohamed at twincreekstechnologies.com>
To: Mary Tang <mtang at stanford.edu>
CC: jim kruger <jimkruger at yahoo.com>, Aditya Agarwal
<aditya at twincreekstechnologies.com>, Kathy Jackson
<kj.jackson at comcast.net>, specmat at snf.stanford.edu
References: <488A0E98.5020208 at stanford.edu>
<488A1905.5040601 at stanford.edu>
Hi Mary,
I have attached the MSDS of a spin-on glass that I would like to get
approved to store and use at SNF. The process sequence is shown below.
spin on 700A SOG using Headway
hot plate bake 200 C ,2 minutes.
RTAgaas for annealing (900 C? 30 sec?).
spin-on dopant using Headway
RTAgaas for activation (900 C? 30 sec?).
WbGaAs 50:1 HF deglaze
STS PECVD nitride
Litho, wet etch
Metal Dep (Innotec)
Litho, wet etch
Metal Dep backside (Innotec)
End
Thank you very much.
Mohamed Hilali
Twin Creeks Technologies, Inc
Tel: 408-507-1649
--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu
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