From mtang at stanford.edu Tue Sep 2 08:20:56 2008 From: mtang at stanford.edu (Mary Tang) Date: Tue, 02 Sep 2008 08:20:56 -0700 Subject: material request - Stycast W 19 epoxy In-Reply-To: <48B9207F.5040904@stanford.edu> References: <48B9207F.5040904@stanford.edu> Message-ID: <48BD59D8.4090600@stanford.edu> Hi Peter -- So, if I understand correctly, you'd like to glue your chips to a silicon wafer with chip pockets and process through litho and lift-off? A few questions: 1. Mixing and applying your epoxy. These are all liquids, correct? Do they require weighing or are they pre-measured? We don't really have the appropriate balance inside the cleanroom for this. However, we do have accurate balances outside the cleanroom (in the wafersaw/CMP room.) Would you be applying the epoxy from a syringe? Since the stuff appears to have a long working time, I'd suggest mixing outside the cleanroom and bringing the syringe (appropriately labeled and enclosed in something like a wafer box) into the cleanroom (through the service aisle) and applying it in a solvent bench. You could also mix inside the lab in a solvent bench, but I have not yet ordered a replacement balance as yet (though you are welcome to nag me about this). If you will be curing on a hot plate for several hours, please be careful to use foil (and not occupy all the hot plates at once.) The concern is that the epoxy will be very difficult to remove if it gets on cassettes, bench tops, or hot plates, so precautions should be taken to make sure none gets on these. If you want to store the unmixed chemicals in the lab, please get the appropriate labels from Mahnaz or me. The chemicals should be stored in the personal Flammables area. Any solid waste should be bagged and placed in one of the Flammables solid waste containers in the Litho area. 2. Standard litho flow should be OK for contact alignment. Hopefully, your desired resolution isn't better than a couple of microns. If this is for ASML, please check first with Mahnaz, Ed, and the ASML engineers. 3. PR lift-off in metalica should be OK. 4. Polyimide lift-off for standard polyimides is not a process we're familiar with. Fully cured polyimide is allowed in the gryphon, but is typically then very hard to remove by wet cleans. Polyimide that is not fully cured is not allowed in the gryphon because off gassing of volatile organics could contaminate the system. Polyimide, if I remember correctly, is also not typically allowed on the laurell, but only on the headway because it does not dissolve in acetone. If you really need polyimide in the gryphon, please provide more details (and probably another SpecMat request.) Mary Peter Chen wrote: > Hi specmat, > > Here is my request: > > Material - Stycast W 19 epoxy, Catalyst 11, Catalyst 9, from Emerson > and Cuming > > Where - > (1) a litho bench (for the exhaust) > (2) standard litho flow (after epoxy cure) > (3) PR lift-off in Metallica > (4) alternatively, polyimide flow at laurell then lift-off in Gryphon > > Process - > (1) Insertion chiplets into backside of pocketed wafer. Mix, apply, > and cure epoxy at a wetbench (for exhaust). Epoxy only used on > backside of wafer. > (2) Downstream to standard litho equipment for other (non-epoxy) litho > steps on frontside > (3) PR lift-off process in Metallica > (4) polyimide lift-off in Gryphon if that can be approved. > > Notes - > (1) I don't need a litho bench per se, I would just like an approved > place that has enough exhaust and 120C hotplate for curing > (2) Epoxy will be applied by syringe or pipette to chiplet insertion > sites only. Goal is to achieve a reconstituted wafer. > (3) Cured epoxy should easily handle 155C. > (4) The raw epoxy and catalyst can be stored at room temperature, > preferably in lab. > (5) After chiplet insertion into wafer backside, my process is to have > metal lift-off on frontside to complete the electrical contacts. I > need to cover some frontside topography, hence sputtering. > > I have attached datasheet and MSDS. Please let me know if there are > other things I should bring to specmat. > > Thanks, > -Peter Chen -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From jwpchen at stanford.edu Tue Sep 2 14:40:59 2008 From: jwpchen at stanford.edu (Peter Chen) Date: Tue, 02 Sep 2008 14:40:59 -0700 Subject: material request - Stycast W 19 epoxy In-Reply-To: <48BD59D8.4090600@stanford.edu> References: <48B9207F.5040904@stanford.edu> <48BD59D8.4090600@stanford.edu> Message-ID: <48BDB2EB.6030200@stanford.edu> Mary, To answer your questions: (1) Yes, my silicon wafer will have backside pockets topped by frontside membranes (metal/dielectric stack). After insertion, the chips should be flush with or recessed into the wafer backside. (2) The epoxy need to be measured and mixed. I do not yet know how critical the mixing ratio is... hopefully I can get by without precision weighing, and just mix by volume. (3) Regarding ASML, I will see if I can shuffle steps around, such that there will be no epoxy going into ASML. (e.g. litho PR for liftoff before insertion then epoxy) (4) You have a good point about cured polyimide and I will need to look at dry etch of polyimide. I do not yet know a good etcher for polyimide though. Thanks, -Peter Mary Tang wrote: > Hi Peter -- > > So, if I understand correctly, you'd like to glue your chips to a > silicon wafer with chip pockets and process through litho and lift-off? > A few questions: > > 1. Mixing and applying your epoxy. These are all liquids, correct? Do > they require weighing or are they pre-measured? We don't really have > the appropriate balance inside the cleanroom for this. However, we do > have accurate balances outside the cleanroom (in the wafersaw/CMP > room.) Would you be applying the epoxy from a syringe? Since the stuff > appears to have a long working time, I'd suggest mixing outside the > cleanroom and bringing the syringe (appropriately labeled and enclosed > in something like a wafer box) into the cleanroom (through the service > aisle) and applying it in a solvent bench. You could also mix inside > the lab in a solvent bench, but I have not yet ordered a replacement > balance as yet (though you are welcome to nag me about this). If you > will be curing on a hot plate for several hours, please be careful to > use foil (and not occupy all the hot plates at once.) The concern is > that the epoxy will be very difficult to remove if it gets on cassettes, > bench tops, or hot plates, so precautions should be taken to make sure > none gets on these. If you want to store the unmixed chemicals in the > lab, please get the appropriate labels from Mahnaz or me. The chemicals > should be stored in the personal Flammables area. Any solid waste > should be bagged and placed in one of the Flammables solid waste > containers in the Litho area. > > 2. Standard litho flow should be OK for contact alignment. Hopefully, > your desired resolution isn't better than a couple of microns. If this > is for ASML, please check first with Mahnaz, Ed, and the ASML engineers. > > 3. PR lift-off in metalica should be OK. > > 4. Polyimide lift-off for standard polyimides is not a process we're > familiar with. Fully cured polyimide is allowed in the gryphon, but is > typically then very hard to remove by wet cleans. Polyimide that is not > fully cured is not allowed in the gryphon because off gassing of > volatile organics could contaminate the system. Polyimide, if I > remember correctly, is also not typically allowed on the laurell, but > only on the headway because it does not dissolve in acetone. If you > really need polyimide in the gryphon, please provide more details (and > probably another SpecMat request.) > > Mary > > Peter Chen wrote: >> Hi specmat, >> >> Here is my request: >> >> Material - Stycast W 19 epoxy, Catalyst 11, Catalyst 9, from Emerson >> and Cuming >> >> Where - >> (1) a litho bench (for the exhaust) >> (2) standard litho flow (after epoxy cure) >> (3) PR lift-off in Metallica >> (4) alternatively, polyimide flow at laurell then lift-off in Gryphon >> >> Process - >> (1) Insertion chiplets into backside of pocketed wafer. Mix, apply, >> and cure epoxy at a wetbench (for exhaust). Epoxy only used on >> backside of wafer. >> (2) Downstream to standard litho equipment for other (non-epoxy) litho >> steps on frontside >> (3) PR lift-off process in Metallica >> (4) polyimide lift-off in Gryphon if that can be approved. >> >> Notes - >> (1) I don't need a litho bench per se, I would just like an approved >> place that has enough exhaust and 120C hotplate for curing >> (2) Epoxy will be applied by syringe or pipette to chiplet insertion >> sites only. Goal is to achieve a reconstituted wafer. >> (3) Cured epoxy should easily handle 155C. >> (4) The raw epoxy and catalyst can be stored at room temperature, >> preferably in lab. >> (5) After chiplet insertion into wafer backside, my process is to have >> metal lift-off on frontside to complete the electrical contacts. I >> need to cover some frontside topography, hence sputtering. >> >> I have attached datasheet and MSDS. Please let me know if there are >> other things I should bring to specmat. >> >> Thanks, >> -Peter Chen > > From mahnaz at stanford.edu Wed Sep 3 10:38:55 2008 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Wed, 03 Sep 2008 10:38:55 -0700 Subject: material request - Stycast W 19 epoxy In-Reply-To: <48BD59D8.4090600@stanford.edu> References: <48B9207F.5040904@stanford.edu> <48BD59D8.4090600@stanford.edu> Message-ID: <48BECBAF.5090908@stanford.edu> Hello Peter, I need a process flow with indication of equipment use please that would be very helpful to me. mahnaz Mary Tang wrote: > Hi Peter -- > > So, if I understand correctly, you'd like to glue your chips to a > silicon wafer with chip pockets and process through litho and > lift-off? A few questions: > > 1. Mixing and applying your epoxy. These are all liquids, correct? > Do they require weighing or are they pre-measured? We don't really > have the appropriate balance inside the cleanroom for this. However, > we do have accurate balances outside the cleanroom (in the > wafersaw/CMP room.) Would you be applying the epoxy from a syringe? > Since the stuff appears to have a long working time, I'd suggest > mixing outside the cleanroom and bringing the syringe (appropriately > labeled and enclosed in something like a wafer box) into the cleanroom > (through the service aisle) and applying it in a solvent bench. You > could also mix inside the lab in a solvent bench, but I have not yet > ordered a replacement balance as yet (though you are welcome to nag me > about this). If you will be curing on a hot plate for several hours, > please be careful to use foil (and not occupy all the hot plates at > once.) The concern is that the epoxy will be very difficult to remove > if it gets on cassettes, bench tops, or hot plates, so precautions > should be taken to make sure none gets on these. If you want to store > the unmixed chemicals in the lab, please get the appropriate labels > from Mahnaz or me. The chemicals should be stored in the personal > Flammables area. Any solid waste should be bagged and placed in one > of the Flammables solid waste containers in the Litho area. > > 2. Standard litho flow should be OK for contact alignment. > Hopefully, your desired resolution isn't better than a couple of > microns. If this is for ASML, please check first with Mahnaz, Ed, and > the ASML engineers. > > 3. PR lift-off in metalica should be OK. > > 4. Polyimide lift-off for standard polyimides is not a process we're > familiar with. Fully cured polyimide is allowed in the gryphon, but > is typically then very hard to remove by wet cleans. Polyimide that > is not fully cured is not allowed in the gryphon because off gassing > of volatile organics could contaminate the system. Polyimide, if I > remember correctly, is also not typically allowed on the laurell, but > only on the headway because it does not dissolve in acetone. If you > really need polyimide in the gryphon, please provide more details (and > probably another SpecMat request.) > > Mary > > Peter Chen wrote: >> Hi specmat, >> >> Here is my request: >> >> Material - Stycast W 19 epoxy, Catalyst 11, Catalyst 9, from Emerson >> and Cuming >> >> Where - >> (1) a litho bench (for the exhaust) >> (2) standard litho flow (after epoxy cure) >> (3) PR lift-off in Metallica >> (4) alternatively, polyimide flow at laurell then lift-off in Gryphon >> >> Process - >> (1) Insertion chiplets into backside of pocketed wafer. Mix, apply, >> and cure epoxy at a wetbench (for exhaust). Epoxy only used on >> backside of wafer. >> (2) Downstream to standard litho equipment for other (non-epoxy) >> litho steps on frontside >> (3) PR lift-off process in Metallica >> (4) polyimide lift-off in Gryphon if that can be approved. >> >> Notes - >> (1) I don't need a litho bench per se, I would just like an approved >> place that has enough exhaust and 120C hotplate for curing >> (2) Epoxy will be applied by syringe or pipette to chiplet insertion >> sites only. Goal is to achieve a reconstituted wafer. >> (3) Cured epoxy should easily handle 155C. >> (4) The raw epoxy and catalyst can be stored at room temperature, >> preferably in lab. >> (5) After chiplet insertion into wafer backside, my process is to >> have metal lift-off on frontside to complete the electrical contacts. >> I need to cover some frontside topography, hence sputtering. >> >> I have attached datasheet and MSDS. Please let me know if there are >> other things I should bring to specmat. >> >> Thanks, >> -Peter Chen > > From jwpchen at stanford.edu Wed Sep 3 23:00:38 2008 From: jwpchen at stanford.edu (Peter Chen) Date: Wed, 03 Sep 2008 23:00:38 -0700 Subject: material request - Stycast W 19 epoxy In-Reply-To: <48BECBAF.5090908@stanford.edu> References: <48B9207F.5040904@stanford.edu> <48BD59D8.4090600@stanford.edu> <48BECBAF.5090908@stanford.edu> Message-ID: <48BF7986.5000609@stanford.edu> Mahnaz, I have indicated the relevant process steps and equipment below: (1) start -- semi-clean wafer with frontside membrane and backside cavities. (2) solvent bench -- insert chiplets and fill gaps with epoxy (3) solvent bench -- cure on hotplate, 120 degC (4a)headway -- polyimide coat (4b)svgcoat -- PR coat, likely SPR220-3 or -7 (5x)karlsuss/evalign -- expose with lift-off mask (5y)asml -- expose with lift-off mask (6a)manual develop? -- also cure polyimide (6b)svgdev -- develop PR (7a)gryphon -- sputter aluminum, no heat (7b)metallica -- sputter Al or Au (still need to run tests first) (8a) p5000etch + TBD -- dry etch back of Al, then O2 etch polyimide (8b) solvent bench -- acetone lift-off of PR Note that (*a) = draft of polyimide flow (*b) = PR flow I can try to draw cross-sections for some of the steps if that helps visualization. Thanks, -Peter Mahnaz Mansourpour wrote: > > Hello Peter, > > I need a process flow with indication of equipment use please that would > be very helpful to me. > > mahnaz > Mary Tang wrote: >> Hi Peter -- >> >> So, if I understand correctly, you'd like to glue your chips to a >> silicon wafer with chip pockets and process through litho and >> lift-off? A few questions: >> >> 1. Mixing and applying your epoxy. These are all liquids, correct? >> Do they require weighing or are they pre-measured? We don't really >> have the appropriate balance inside the cleanroom for this. However, >> we do have accurate balances outside the cleanroom (in the >> wafersaw/CMP room.) Would you be applying the epoxy from a syringe? >> Since the stuff appears to have a long working time, I'd suggest >> mixing outside the cleanroom and bringing the syringe (appropriately >> labeled and enclosed in something like a wafer box) into the cleanroom >> (through the service aisle) and applying it in a solvent bench. You >> could also mix inside the lab in a solvent bench, but I have not yet >> ordered a replacement balance as yet (though you are welcome to nag me >> about this). If you will be curing on a hot plate for several hours, >> please be careful to use foil (and not occupy all the hot plates at >> once.) The concern is that the epoxy will be very difficult to remove >> if it gets on cassettes, bench tops, or hot plates, so precautions >> should be taken to make sure none gets on these. If you want to store >> the unmixed chemicals in the lab, please get the appropriate labels >> from Mahnaz or me. The chemicals should be stored in the personal >> Flammables area. Any solid waste should be bagged and placed in one >> of the Flammables solid waste containers in the Litho area. >> >> 2. Standard litho flow should be OK for contact alignment. >> Hopefully, your desired resolution isn't better than a couple of >> microns. If this is for ASML, please check first with Mahnaz, Ed, and >> the ASML engineers. >> >> 3. PR lift-off in metalica should be OK. >> >> 4. Polyimide lift-off for standard polyimides is not a process we're >> familiar with. Fully cured polyimide is allowed in the gryphon, but >> is typically then very hard to remove by wet cleans. Polyimide that >> is not fully cured is not allowed in the gryphon because off gassing >> of volatile organics could contaminate the system. Polyimide, if I >> remember correctly, is also not typically allowed on the laurell, but >> only on the headway because it does not dissolve in acetone. If you >> really need polyimide in the gryphon, please provide more details (and >> probably another SpecMat request.) >> >> Mary >> >> Peter Chen wrote: >>> Hi specmat, >>> >>> Here is my request: >>> >>> Material - Stycast W 19 epoxy, Catalyst 11, Catalyst 9, from Emerson >>> and Cuming >>> >>> Where - >>> (1) a litho bench (for the exhaust) >>> (2) standard litho flow (after epoxy cure) >>> (3) PR lift-off in Metallica >>> (4) alternatively, polyimide flow at laurell then lift-off in Gryphon >>> >>> Process - >>> (1) Insertion chiplets into backside of pocketed wafer. Mix, apply, >>> and cure epoxy at a wetbench (for exhaust). Epoxy only used on >>> backside of wafer. >>> (2) Downstream to standard litho equipment for other (non-epoxy) >>> litho steps on frontside >>> (3) PR lift-off process in Metallica >>> (4) polyimide lift-off in Gryphon if that can be approved. >>> >>> Notes - >>> (1) I don't need a litho bench per se, I would just like an approved >>> place that has enough exhaust and 120C hotplate for curing >>> (2) Epoxy will be applied by syringe or pipette to chiplet insertion >>> sites only. Goal is to achieve a reconstituted wafer. >>> (3) Cured epoxy should easily handle 155C. >>> (4) The raw epoxy and catalyst can be stored at room temperature, >>> preferably in lab. >>> (5) After chiplet insertion into wafer backside, my process is to >>> have metal lift-off on frontside to complete the electrical contacts. >>> I need to cover some frontside topography, hence sputtering. >>> >>> I have attached datasheet and MSDS. Please let me know if there are >>> other things I should bring to specmat. >>> >>> Thanks, >>> -Peter Chen >> >> From artyjamo at gmail.com Wed Sep 10 12:28:59 2008 From: artyjamo at gmail.com (Aleta Jamora) Date: Wed, 10 Sep 2008 12:28:59 -0700 Subject: Request Approval for SIPR - 9684M-3.0 Message-ID: <8a37d7c00809101228y66c0f6abl625a1c9fb8a2d511@mail.gmail.com> Hello Spec Mat, I would like to bring in a new positive resist, SIPR 9684M-3.0 The purpose of this resist is to print single layer lift-off patterns. I am planning on bringing the samples in in 8 oz brown bottles (like we have in the store room) and storing them in the Flammables cabinet that we have (shelf L) along with the other photo-resist samples. My intention is to use these resists to coat 3 and 4 inch Silicon wafers on the Headway spinner (3-7 um thick) and soft bake the resist on the hotplates that are adjacent to the Headway. I am planning on using the Karl Seuss aligners to expose the wafers, and then I will develop the patterns at the develop bench in beakers using LDD-26W or which ever MIF developer is available at SNF. Disposal and clean up of these materials should follow the standard procedures for DQN positive photoresists - bagging contaminated clean room wipes, foil & empty bottles and putting them in the designated chemical trash bins. The resists themselves can be dispensed in the chemical carboys for organics in the solvent hoods for disposal. The used LDD-26W developer containing the resist will go down the drain at the develop bench. I am attaching a PDF file of the MSDS sheet for this resist. Thanks > > > > -Aleta Jamora > > > > Translucent Inc > > 510 378 1602 > > artyjamo at comcast.net > -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: SIPR-9684M-3.0.pdf Type: application/pdf Size: 993498 bytes Desc: not available URL: From news at discount-educational-software.net Wed Sep 10 16:50:06 2008 From: news at discount-educational-software.net (Educational Software Newsletter) Date: Wed, 10 Sep 2008 19:50:06 -0400 Subject: Educational Software News - September 2008 Message-ID: <7298217b5e1381b8aa29566222ffa1@bmw> Back-to-School promotional price for Microsoft Office 2007 Professional available while supplies last! See details below. Adobe Acrobat Professional 9.0 has just been released along with updated versions of the Adobe Creative Suite bundles. See below for more details. Computer Products for Education is pleased to provide Educational Software News to current students, faculty, staff, and schools with news, pricing, and availability of Academic Edition Software from Microsoft, Adobe, Corel, Autodesk, Quark, EndNote, FileMaker, and many other major software manufacturers. 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However, if you do not wish to receive any more newsletters from CPE, please use the following link: http://www.discount-educational-software.us/rem.asp?a=remv&e=specmat at snf.stanford.edu Or call 800-679-7007 for additional options. __________________________ Sincerely, Computer Products for Education 5325 140th Avenue North Clearwater, Florida 33760 Tel: 800-679-7007 Fax: 800-679-6996 support at discount-educational-software.us ___________________ THANK YOU!!! From artyjamo at gmail.com Thu Sep 11 14:07:18 2008 From: artyjamo at gmail.com (Aleta Jamora) Date: Thu, 11 Sep 2008 14:07:18 -0700 Subject: SIPR 9684HM-5.0 Message-ID: <8a37d7c00809111407v4c644773vb33fcff6a0aa366b@mail.gmail.com> Hello Spec Mat, I would like to bring in a new positive resist, SIPR 9684HM-5 The purpose of this resist is to print single layer lift-off patterns. I am planning on bringing the samples in in 8 oz brown bottles (like we have in the store room) and storing them in the Flammables cabinet that we have (shelf L) along with the other photo-resist samples. My intention is to use these resists to coat 3 and 4 inch Silicon wafers on the Headway spinner (7-12 um thick) and soft bake the resist on the hotplates that are adjacent to the Headway. I am planning on using the Karl Seuss aligners to expose the wafers, and then I will develop the patterns at the develop bench in beakers using LDD-26W or which ever MIF developer is available at SNF. Disposal and clean up of these materials should follow the standard procedures for DQN positive photoresists - bagging contaminated clean room wipes, foil & empty bottles and putting them in the designated chemical trash bins. The resists themselves can be dispensed in the chemical carboys for organics in the solvent hoods for disposal. The used LDD-26W developer containing the resist will go down the drain at the develop bench. I am attaching a PDF file of the MSDS sheet for this resist. Thanks Aleta Jamora Translucent Inc (510 378 1602) -------------- next part -------------- An HTML attachment was scrubbed... URL: From artyjamo at gmail.com Thu Sep 11 14:08:48 2008 From: artyjamo at gmail.com (Aleta Jamora) Date: Thu, 11 Sep 2008 14:08:48 -0700 Subject: Fwd: SIPR 9684HM-5.0 In-Reply-To: <8a37d7c00809111407v4c644773vb33fcff6a0aa366b@mail.gmail.com> References: <8a37d7c00809111407v4c644773vb33fcff6a0aa366b@mail.gmail.com> Message-ID: <8a37d7c00809111408j224797d2l720f0499705f752c@mail.gmail.com> Sorry, forgot to attach the MSDS file ---------- Forwarded message ---------- From: Aleta Jamora Date: Thu, Sep 11, 2008 at 2:07 PM Subject: SIPR 9684HM-5.0 To: specmat stanford Hello Spec Mat, I would like to bring in a new positive resist, SIPR 9684HM-5 The purpose of this resist is to print single layer lift-off patterns. I am planning on bringing the samples in in 8 oz brown bottles (like we have in the store room) and storing them in the Flammables cabinet that we have (shelf L) along with the other photo-resist samples. My intention is to use these resists to coat 3 and 4 inch Silicon wafers on the Headway spinner (7-12 um thick) and soft bake the resist on the hotplates that are adjacent to the Headway. I am planning on using the Karl Seuss aligners to expose the wafers, and then I will develop the patterns at the develop bench in beakers using LDD-26W or which ever MIF developer is available at SNF. Disposal and clean up of these materials should follow the standard procedures for DQN positive photoresists - bagging contaminated clean room wipes, foil & empty bottles and putting them in the designated chemical trash bins. The resists themselves can be dispensed in the chemical carboys for organics in the solvent hoods for disposal. The used LDD-26W developer containing the resist will go down the drain at the develop bench. I am attaching a PDF file of the MSDS sheet for this resist. Thanks Aleta Jamora Translucent Inc (510 378 1602) -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: SIPR-9684HM-5 0 MSDS.pdf Type: application/pdf Size: 1386941 bytes Desc: not available URL: From jwpchen at stanford.edu Thu Sep 11 17:46:50 2008 From: jwpchen at stanford.edu (Peter Chen) Date: Thu, 11 Sep 2008 17:46:50 -0700 Subject: material request - Stycast W 19 epoxy In-Reply-To: <48BF7986.5000609@stanford.edu> References: <48B9207F.5040904@stanford.edu> <48BD59D8.4090600@stanford.edu> <48BECBAF.5090908@stanford.edu> <48BF7986.5000609@stanford.edu> Message-ID: <48C9BBFA.4000402@stanford.edu> Hi specmat, I checked with Maurice about gryphon. Due to the wafer handling arrangement inside, it is best if I use a carrier wafer and kapton tape. What remains is qualifying the epoxy for vacuum. Is there a protocol for this approval? (cc'ed to Ed) Thanks in advance, -Peter Peter Chen wrote: > Mahnaz, > > I have indicated the relevant process steps and equipment below: > > (1) start -- semi-clean wafer with frontside membrane and backside > cavities. > (2) solvent bench -- insert chiplets and fill gaps with epoxy > (3) solvent bench -- cure on hotplate, 120 degC > > (4a)headway -- polyimide coat > (4b)svgcoat -- PR coat, likely SPR220-3 or -7 > > (5x)karlsuss/evalign -- expose with lift-off mask > (5y)asml -- expose with lift-off mask > > (6a)manual develop? -- also cure polyimide > (6b)svgdev -- develop PR > > (7a)gryphon -- sputter aluminum, no heat > (7b)metallica -- sputter Al or Au (still need to run tests first) > > (8a) p5000etch + TBD -- dry etch back of Al, then O2 etch polyimide > (8b) solvent bench -- acetone lift-off of PR > > Note that > (*a) = draft of polyimide flow > (*b) = PR flow > > I can try to draw cross-sections for some of the steps if that helps > visualization. > > Thanks, > -Peter > > Mahnaz Mansourpour wrote: >> >> Hello Peter, >> >> I need a process flow with indication of equipment use please that >> would be very helpful to me. >> >> mahnaz >> Mary Tang wrote: >>> Hi Peter -- >>> >>> So, if I understand correctly, you'd like to glue your chips to a >>> silicon wafer with chip pockets and process through litho and >>> lift-off? A few questions: >>> >>> 1. Mixing and applying your epoxy. These are all liquids, correct? >>> Do they require weighing or are they pre-measured? We don't really >>> have the appropriate balance inside the cleanroom for this. However, >>> we do have accurate balances outside the cleanroom (in the >>> wafersaw/CMP room.) Would you be applying the epoxy from a syringe? >>> Since the stuff appears to have a long working time, I'd suggest >>> mixing outside the cleanroom and bringing the syringe (appropriately >>> labeled and enclosed in something like a wafer box) into the >>> cleanroom (through the service aisle) and applying it in a solvent >>> bench. You could also mix inside the lab in a solvent bench, but I >>> have not yet ordered a replacement balance as yet (though you are >>> welcome to nag me about this). If you will be curing on a hot plate >>> for several hours, please be careful to use foil (and not occupy all >>> the hot plates at once.) The concern is that the epoxy will be very >>> difficult to remove if it gets on cassettes, bench tops, or hot >>> plates, so precautions should be taken to make sure none gets on >>> these. If you want to store the unmixed chemicals in the lab, please >>> get the appropriate labels from Mahnaz or me. The chemicals should >>> be stored in the personal Flammables area. Any solid waste should be >>> bagged and placed in one of the Flammables solid waste containers in >>> the Litho area. >>> >>> 2. Standard litho flow should be OK for contact alignment. >>> Hopefully, your desired resolution isn't better than a couple of >>> microns. If this is for ASML, please check first with Mahnaz, Ed, >>> and the ASML engineers. >>> >>> 3. PR lift-off in metalica should be OK. >>> >>> 4. Polyimide lift-off for standard polyimides is not a process we're >>> familiar with. Fully cured polyimide is allowed in the gryphon, but >>> is typically then very hard to remove by wet cleans. Polyimide that >>> is not fully cured is not allowed in the gryphon because off gassing >>> of volatile organics could contaminate the system. Polyimide, if I >>> remember correctly, is also not typically allowed on the laurell, but >>> only on the headway because it does not dissolve in acetone. If you >>> really need polyimide in the gryphon, please provide more details >>> (and probably another SpecMat request.) >>> >>> Mary >>> >>> Peter Chen wrote: >>>> Hi specmat, >>>> >>>> Here is my request: >>>> >>>> Material - Stycast W 19 epoxy, Catalyst 11, Catalyst 9, from Emerson >>>> and Cuming >>>> >>>> Where - >>>> (1) a litho bench (for the exhaust) >>>> (2) standard litho flow (after epoxy cure) >>>> (3) PR lift-off in Metallica >>>> (4) alternatively, polyimide flow at laurell then lift-off in Gryphon >>>> >>>> Process - >>>> (1) Insertion chiplets into backside of pocketed wafer. Mix, apply, >>>> and cure epoxy at a wetbench (for exhaust). Epoxy only used on >>>> backside of wafer. >>>> (2) Downstream to standard litho equipment for other (non-epoxy) >>>> litho steps on frontside >>>> (3) PR lift-off process in Metallica >>>> (4) polyimide lift-off in Gryphon if that can be approved. >>>> >>>> Notes - >>>> (1) I don't need a litho bench per se, I would just like an approved >>>> place that has enough exhaust and 120C hotplate for curing >>>> (2) Epoxy will be applied by syringe or pipette to chiplet insertion >>>> sites only. Goal is to achieve a reconstituted wafer. >>>> (3) Cured epoxy should easily handle 155C. >>>> (4) The raw epoxy and catalyst can be stored at room temperature, >>>> preferably in lab. >>>> (5) After chiplet insertion into wafer backside, my process is to >>>> have metal lift-off on frontside to complete the electrical >>>> contacts. I need to cover some frontside topography, hence sputtering. >>>> >>>> I have attached datasheet and MSDS. Please let me know if there are >>>> other things I should bring to specmat. >>>> >>>> Thanks, >>>> -Peter Chen >>> >>> > > From patricia.carlson at global-fab.com Fri Sep 12 00:45:16 2008 From: patricia.carlson at global-fab.com (Patricia Carlsom) Date: Fri, 12 Sep 2008 03:45:16 -0400 (EDT) Subject: Semiconductor Equipment auction Message-ID: <1102219593876.1101401002153.9044.6.49034046@scheduler> G-Fab LOGO [http://rs6.net/tn.jsp?e=00198-QEH8LINf-fg_ItG83PdQe3_YMUDvdkZssKHxZ24Yc5-yc_PweYmhKQt0iXgslosFKPQbxTh9PZma0jPD3OQrQwfSALxT_D1M3UevPnK_2dT-pFlU6TQ==] ~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~ Global Fab Surplus LLC(G-Fab) will be auctioning off all our current equipment inventory to the highest bidder. The inventory is located in our Colorado Springs warehouse unless otherwise stated. Included in the inventory are thousands of back end semiconductor spare parts and Semiconductor process, facility and test systems. Below is a full list. All Spec sheets are available on request. Click here for specs and pictures [http://rs6.net/tn.jsp?e=00198-QEH8LINfQaAA1dTZSrWrsq0DZZmnHb5U9r_0ArJnHza1VV1NZzAId0BIZ7yCERR7dIN7UdVJI-BPyryeu1ww6B9oeE-5LfEwDLpyonTi8Nka_OqBFkChVEm--x7hrE-M7LEMwkTxmIYZ5Q0O59C40bTIm4voD]. Bidding will begin immediately and will end on October 1, 2008 at close of business Pacific time. Inspections can be arranged at any time. Some tools have already been crated and barrier bagged for international shipping, the buyer is responsible for all un-crating and re-crating costs associated with the inspection. All bids must be made by either official bid form below or on company letterhead with the below information and returned by email, fax or other form of postal mail and must be received prior to auction closing date and time. Bids can be made on individual equipment or on multiple tools with a single bulk price. Successful buyer is responsible for any taxes, shipping and crating costs associated with the removal of tools and/or parts. Removal must be completed within two weeks of auction close unless special arrangements have been made between buyer and Global Fab Surplus in advance. All tools and parts are sold as-is where-is with no warranties expressed or implied. Everything is FOB ex works. OEM software license transfers fees are the responsibility of the buyer. Payments terms as follows: ? 20% non-refundable deposit within 48 hours of auction close. ? 80% within 3 business days after auction close and prior to removal Global Fab Surplus reserves the right to: ? Refuse any bids turned in late or bids that do not meet the minimum requirements. ? Extend the auction dates ? Close the auction or remove a tool from auction early without notice ? Make award on factors other than costs. ? Auction is subject to G-Fabs standard terms and conditions available on request. Bid form must be complete and signed. Copies of the bid form can be provided by email on fax on request. This is a legal binding agreement between bidder and Global Fab Surplus. If awarded, the winning bid buyer is legally bound by the laws of the state of Colorado and is responsible for all payments in full. ALL Terms and Conditions (T's & C's) listed in the Global Fab Surplus T's & C's are in effect and cannot be over ridden by any other without prior written agreement between all parties. A copy of these are available on request or by clicking here. [http://rs6.net/tn.jsp?e=00198-QEH8LINf-i2477ENV99QH90wAuMnMc8T8JZcuZQ9m_OtDJe17oBLwmUb_l-pKMBUtmm1yLgLRgT-zYRzlWASvh6O38hRbfLBYIWhb3Q9wLDCyIvPvYd2WB-xFQ4o2lA_bn9ZL7t2ifDZHGA6O39K-lPJVR3awufE5HDaL2DIrBE9Bicpa5nuAvjwp5B23tku7CtkjQPP42CG1WzhQYA==] Date of Proposal: Company Main Phone number: Street Address: Primary Contact: Direct Phone #: Email Address: Secondary Contact: Secondary Phone #: Secondary Email: Item # Description Bid Price Signing below is acceptance of the terms and conditions of this agreement [http://rs6.net/tn.jsp?e=00198-QEH8LINf-i2477ENV99QH90wAuMnMc8T8JZcuZQ9m_OtDJe17oBLwmUb_l-pKMBUtmm1yLgLRgT-zYRzlWASvh6O38hRbfLBYIWhb3Q9wLDCyIvPvYd2WB-xFQ4o2lA_bn9ZL7t2ifDZHGA6O39K-lPJVR3awufE5HDaL2DIrBE9Bicpa5nuAvjwp5B23tku7CtkjQPP42CG1WzhQYA==]as stated in the Global Fab Surplus T's & C's. [http://rs6.net/tn.jsp?e=00198-QEH8LINf-i2477ENV99QH90wAuMnMc8T8JZcuZQ9m_OtDJe17oBLwmUb_l-pKMBUtmm1yLgLRgT-zYRzlWASvh6O38hRbfLBYIWhb3Q9wLDCyIvPvYd2WB-xFQ4o2lA_bn9ZL7t2ifDZHGA6O39K-lPJVR3awufE5HDaL2DIrBE9Bicpa5nuAvjwp5B23tku7CtkjQPP42CG1WzhQYA==]Bidders will be notified of winning bids within 24 hours of auction close. Name Title Signature Date: Equipment list Item # Description Minimum Bid 01221 [http://rs6.net/tn.jsp?e=00198-QEH8LINfQaAA1dTZSrWrsq0DZZmnHb5U9r_0ArJnHza1VV1NZzAId0BIZ7yCERR7dIN7UdVJI-BPyryeu1ww6B9oeE-5LfEwDLpyonTi8Nka_OqBFkChVEm--x7hrE-M7LEMwkTxmIYZ5Q0O59C40bTIm4voD] IPEC 372m CMP [http://rs6.net/tn.jsp?e=00198-QEH8LINfQaAA1dTZSrWrsq0DZZmnHb5U9r_0ArJnHza1VV1NZzAId0BIZ7yCERR7dIN7UdVJI-BPyryeu1ww6B9oeE-5LfEwDLpyonTi8Nka_OqBFkChVEm--x7hrE-M7LEMwkTxmIYZ5Q0O59C40bTIm4voD] (Very Clean) [http://rs6.net/tn.jsp?e=00198-QEH8LINfQaAA1dTZSrWrsq0DZZmnHb5U9r_0ArJnHza1VV1NZzAId0BIZ7yCERR7dIN7UdVJI-BPyryeu1ww6B9oeE-5LfEwDLpyonTi8Nka_OqBFkChVEm--x7hrE-M7LEMwkTxmIYZ5Q0O59C40bTIm4voD] $15,000 [http://rs6.net/tn.jsp?e=00198-QEH8LINfQaAA1dTZSrWrsq0DZZmnHb5U9r_0ArJnHza1VV1NZzAId0BIZ7yCERR7dIN7UdVJI-BPyryeu1ww6B9oeE-5LfEwDLpyonTi8Nka_OqBFkChVEm--x7hrE-M7LEMwkTxmIYZ5Q0O59C40bTIm4voD] 01222 [http://rs6.net/tn.jsp?e=00198-QEH8LINfQaAA1dTZSrWrsq0DZZmnHb5U9r_0ArJnHza1VV1NZzAId0BIZ7yCERR7dIN7UdVJI-BPyryeu1ww6B9oeE-5LfEwDLpyonTi8Nka_OqBFkChVEm--x7hrE-M7LEMwkTxmIYZ5Q0O59C40bTIm4voD] IPEC 372m CMP [http://rs6.net/tn.jsp?e=00198-QEH8LINfQaAA1dTZSrWrsq0DZZmnHb5U9r_0ArJnHza1VV1NZzAId0BIZ7yCERR7dIN7UdVJI-BPyryeu1ww6B9oeE-5LfEwDLpyonTi8Nka_OqBFkChVEm--x7hrE-M7LEMwkTxmIYZ5Q0O59C40bTIm4voD] (Very Clean) [http://rs6.net/tn.jsp?e=00198-QEH8LINfQaAA1dTZSrWrsq0DZZmnHb5U9r_0ArJnHza1VV1NZzAId0BIZ7yCERR7dIN7UdVJI-BPyryeu1ww6B9oeE-5LfEwDLpyonTi8Nka_OqBFkChVEm--x7hrE-M7LEMwkTxmIYZ5Q0O59C40bTIm4voD] $15,000 [http://rs6.net/tn.jsp?e=00198-QEH8LINfQaAA1dTZSrWrsq0DZZmnHb5U9r_0ArJnHza1VV1NZzAId0BIZ7yCERR7dIN7UdVJI-BPyryeu1ww6B9oeE-5LfEwDLpyonTi8Nka_OqBFkChVEm--x7hrE-M7LEMwkTxmIYZ5Q0O59C40bTIm4voD] 01223 [http://rs6.net/tn.jsp?e=00198-QEH8LINfQaAA1dTZSrWrsq0DZZmnHb5U9r_0ArJnHza1VV1NZzAId0BIZ7yCERR7dIN7UdVJI-BPyryeu1ww6B9oeE-5LfEwDLpyonTi8Nka_OqBFkChVEm--x7hrE-M7LEMwkTxmIYZ5Q0O59C40bTIm4voD] IPEC 676 CMP [http://rs6.net/tn.jsp?e=00198-QEH8LINfK3MS1SXEuIvklgpzl-2AbeE7Fmoh_z6M-eyAZ80_I909ya9vMzLx9YmwpC-ij4IAH-zn8nh6HkNiYfBjAtUJ18eXlvndPLta4uqaSqtxpyGMgpr0ulnAlVCth0E6ETeyW8Ld4EpSVH6JxtIj21WmXT5AV2k1k8W8=] (Very clean) [http://rs6.net/tn.jsp?e=00198-QEH8LINfK3MS1SXEuIvklgpzl-2AbeE7Fmoh_z6M-eyAZ80_I909ya9vMzLx9YmwpC-ij4IAH-zn8nh6HkNiYfBjAtUJ18eXlvndPLta4uqaSqtxpyGMgpr0ulnAlVCth0E6ETeyW8Ld4EpSVH6JxtIj21WmXT5AV2k1k8W8=] $10,000 01224 [http://rs6.net/tn.jsp?e=00198-QEH8LINfQaAA1dTZSrWrsq0DZZmnHb5U9r_0ArJnHza1VV1NZzAId0BIZ7yCERR7dIN7UdVJI-BPyryeu1ww6B9oeE-5LfEwDLpyonTi8Nka_OqBFkChVEm--x7hrE-M7LEMwkTxmIYZ5Q0O59C40bTIm4voD] LAM Alliance A4 etcher [http://rs6.net/tn.jsp?e=00198-QEH8LINdSi676UY1Z3FAzSGt31-rjMQCbfW24wAoDTFYmyNi0uSXnoBW1j2czrFgPYopYmSMrKNHZh_T18TB7GlR8gknphp7IYMu64dCqeZjwX0PE8j8c6Xae-V9Aw-CuP1ka2BYaivpk4ZSo_p5sHvKUOVQlD4JLhW6DU8bL5maUgN6nTMQvxjh3H5Fk4aJCySxMY8c=] $65,000 (4520XL (oxide etch) chamber, TCP9400SE (polyetch), RF Gen Rack, Pump Stack, [http://rs6.net/tn.jsp?e=00198-QEH8LINfQaAA1dTZSrWrsq0DZZmnHb5U9r_0ArJnHza1VV1NZzAId0BIZ7yCERR7dIN7UdVJI-BPyryeu1ww6B9oeE-5LfEwDLpyonTi8Nka_OqBFkChVEm--x7hrE-M7LEMwkTxmIYZ5Q0O59C40bTIm4voD] Gas Cabinets, Electrical Cabinet and accessories (computers,etc.) [http://rs6.net/tn.jsp?e=00198-QEH8LINfQaAA1dTZSrWrsq0DZZmnHb5U9r_0ArJnHza1VV1NZzAId0BIZ7yCERR7dIN7UdVJI-BPyryeu1ww6B9oeE-5LfEwDLpyonTi8Nka_OqBFkChVEm--x7hrE-M7LEMwkTxmIYZ5Q0O59C40bTIm4voD] 01225 [http://rs6.net/tn.jsp?e=00198-QEH8LINfQaAA1dTZSrWrsq0DZZmnHb5U9r_0ArJnHza1VV1NZzAId0BIZ7yCERR7dIN7UdVJI-BPyryeu1ww6B9oeE-5LfEwDLpyonTi8Nka_OqBFkChVEm--x7hrE-M7LEMwkTxmIYZ5Q0O59C40bTIm4voD] LAM Rainbow 4428 (In like new condition) [http://rs6.net/tn.jsp?e=00198-QEH8LINdUGwuURxzOMgPmyTWjK6LjHSnu7boYPtaWA0LhGIo-9RZDRVcGWkikxhYMUUiec_3wgFIjg7FgkgWUSivVQwh2HbDZnBLmowJxLI-Wb6wrCPUK8ZRgA1nhlRcOSGHhNiLxMDHLRczfax1Kvyz7uPqnC5g2QOhfJH8FqDD2rzUy1A==] $20,000 01226 [http://rs6.net/tn.jsp?e=00198-QEH8LINfQaAA1dTZSrWrsq0DZZmnHb5U9r_0ArJnHza1VV1NZzAId0BIZ7yCERR7dIN7UdVJI-BPyryeu1ww6B9oeE-5LfEwDLpyonTi8Nka_OqBFkChVEm--x7hrE-M7LEMwkTxmIYZ5Q0O59C40bTIm4voD] Biorad/Accent Q7 Overlay system [http://rs6.net/tn.jsp?e=00198-QEH8LINfCqZ-mkrMBYXHVEhbQYC9Zvm3xwhfy0xpfQhClV1wgC184s3Gxl7Nee2MSaWj5H1qmR11TzpntQ5uWOCIDjkNRKoFaMjV5GKPMByszhhF-uxtzSAULwoyE_HmtQL-BbfX-284cuxRIYKvkvERoJLWMrGGsBtRoqG3WeocjZ3Ou9w==] (Very Clean) [http://rs6.net/tn.jsp?e=00198-QEH8LINfCqZ-mkrMBYXHVEhbQYC9Zvm3xwhfy0xpfQhClV1wgC184s3Gxl7Nee2MSaWj5H1qmR11TzpntQ5uWOCIDjkNRKoFaMjV5GKPMByszhhF-uxtzSAULwoyE_HmtQL-BbfX-284cuxRIYKvkvERoJLWMrGGsBtRoqG3WeocjZ3Ou9w==] $20,000 01227 [http://rs6.net/tn.jsp?e=00198-QEH8LINfQaAA1dTZSrWrsq0DZZmnHb5U9r_0ArJnHza1VV1NZzAId0BIZ7yCERR7dIN7UdVJI-BPyryeu1ww6B9oeE-5LfEwDLpyonTi8Nka_OqBFkChVEm--x7hrE-M7LEMwkTxmIYZ5Q0O59C40bTIm4voD] SVG 90s I-Line Tracks [http://rs6.net/tn.jsp?e=00198-QEH8LINePvRnd_mSRduCpufwf-21eBkJFsYJrxmUk8iUjSGQns9uKOy_cSXzY26EiFw6sUEGPEAxshz6O7ZSthzowU0FUeyUVU-kS90JeB9eKIjo2BynrPciqZnjte_0eYLTCW5xP1jyyZspZBuoUp9XWjLKUnq1e401Zz2FnlG0awIdJnw==] (Very Clean) [http://rs6.net/tn.jsp?e=00198-QEH8LINePvRnd_mSRduCpufwf-21eBkJFsYJrxmUk8iUjSGQns9uKOy_cSXzY26EiFw6sUEGPEAxshz6O7ZSthzowU0FUeyUVU-kS90JeB9eKIjo2BynrPciqZnjte_0eYLTCW5xP1jyyZspZBuoUp9XWjLKUnq1e401Zz2FnlG0awIdJnw==] $10,000 01228 [http://rs6.net/tn.jsp?e=00198-QEH8LINfQaAA1dTZSrWrsq0DZZmnHb5U9r_0ArJnHza1VV1NZzAId0BIZ7yCERR7dIN7UdVJI-BPyryeu1ww6B9oeE-5LfEwDLpyonTi8Nka_OqBFkChVEm--x7hrE-M7LEMwkTxmIYZ5Q0O59C40bTIm4voD] SVG 90s I-Line Tracks [http://rs6.net/tn.jsp?e=00198-QEH8LINePvRnd_mSRduCpufwf-21eBkJFsYJrxmUk8iUjSGQns9uKOy_cSXzY26EiFw6sUEGPEAxshz6O7ZSthzowU0FUeyUVU-kS90JeB9eKIjo2BynrPciqZnjte_0eYLTCW5xP1jyyZspZBuoUp9XWjLKUnq1e401Zz2FnlG0awIdJnw==] (Very Clean) 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[http://rs6.net/tn.jsp?e=00198-QEH8LINfQaAA1dTZSrWrsq0DZZmnHb5U9r_0ArJnHza1VV1NZzAId0BIZ7yCERR7dIN7UdVJI-BPyryeu1ww6B9oeE-5LfEwDLpyonTi8Nka_OqBFkChVEm--x7hrE-M7LEMwkTxmIYZ5Q0O59C40bTIm4voD] Ecosys Exhaust scrubber [http://rs6.net/tn.jsp?e=00198-QEH8LINfQaAA1dTZSrWrsq0DZZmnHb5U9r_0ArJnHza1VV1NZzAId0BIZ7yCERR7dIN7UdVJI-BPyryeu1ww6B9oeE-5LfEwDLpyonTi8Nka_OqBFkChVEm--x7hrE-M7LEMwkTxmIYZ5Q0O59C40bTIm4voD] None [http://rs6.net/tn.jsp?e=00198-QEH8LINfQaAA1dTZSrWrsq0DZZmnHb5U9r_0ArJnHza1VV1NZzAId0BIZ7yCERR7dIN7UdVJI-BPyryeu1ww6B9oeE-5LfEwDLpyonTi8Nka_OqBFkChVEm--x7hrE-M7LEMwkTxmIYZ5Q0O59C40bTIm4voD] ~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~ Global Fab Surplus Semiconductor Equipment LLC [http://rs6.net/tn.jsp?e=00198-QEH8LINf-fg_ItG83PdQe3_YMUDvdkZssKHxZ24Yc5-yc_PweYmhKQt0iXgslosFKPQbxTh9PZma0jPD3OQrQwfSALxT_D1M3UevPnK_2dT-pFlU6TQ==], provides surplus, used, rebuilt and refurbished semiconductor process equipment to integrated device manufacturers, wafer 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Update Profile/Email Address http://visitor.constantcontact.com/d.jsp?v=001RO3dPrXHwIHjNc18qg2uYpS-p4D8dFWv1E11aTUNH0B8gFSVxktRrocbVqaeNuYw6IDvXcYbGUc%3D&p=oo Instant removal with SafeUnsubscribe(TM) http://visitor.constantcontact.com/d.jsp?v=001RO3dPrXHwIHjNc18qg2uYpS-p4D8dFWv1E11aTUNH0B8gFSVxktRrocbVqaeNuYw6IDvXcYbGUc%3D&p=un Privacy Policy: http://ui.constantcontact.com/roving/CCPrivacyPolicy.jsp Global Fab Surplus | 195 Kirkstone Lane | Colorado Springs | CO | 80906 -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Tue Sep 16 10:45:03 2008 From: mtang at stanford.edu (Mary Tang) Date: Tue, 16 Sep 2008 10:45:03 -0700 Subject: [Fwd: Erbium chloride] Message-ID: <48CFF09F.906@stanford.edu> Hi all -- Can this be done on rtagaas? Mary -------- Original Message -------- Subject: Erbium chloride Date: Thu, 11 Sep 2008 14:38:48 -0700 From: Aaron Hryciw To: Mary Tang Hi Mary ? Attached is an MSDS for erbium chloride hexahydrate, from which I will be making a solution in ethanol in my lab, and which I want to bring into SNF. The melting point is 774 ?C, and the vapour pressure is 17.4 (Torr?), for the water component. I would like to spin this on a Si wafer using the headway, then anneal it between 900 ?C and 1250 ?C using rtagaas, or equivalent, if possible. Please let me know whether this is all you require, or whether a formal request must be sent to spec mat. Cheers! ? Aaron -- Aaron Hryciw Postdoctoral Scholar Geballe Laboratory for Advanced Materials Stanford University 476 Lomita Mall (04-490) McCullough Building, Rm. 325 Stanford, CA 94305-4045 Tel.: (650) 723-5840 Fax.: (650) 736-1984 -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- A non-text attachment was scrubbed... Name: erbiumchloride.pdf Type: application/pdf Size: 250282 bytes Desc: not available URL: From rnoriega.m at gmail.com Fri Sep 19 12:01:13 2008 From: rnoriega.m at gmail.com (Rodrigo Noriega) Date: Fri, 19 Sep 2008 12:01:13 -0700 Subject: SNF profilometer Message-ID: <64f662450809191201h65a8d8ecsb028e470a88c01fc@mail.gmail.com> Hi, I was instructed by Uli Thumser to contact you and check whether i can use the Tencor Alphastep 200 Step Profiler ('gold' equipment group) for my samples. My films are made of ZnO nanowires, which are either undoped or doped with Al or Ga. The substrates we use are quartz, silicon, silicon dioxide, and common glass slides. Thanks, Rodrigo Noriega From jcdoll at stanford.edu Fri Sep 19 12:15:17 2008 From: jcdoll at stanford.edu (Joey Doll) Date: Fri, 19 Sep 2008 12:15:17 -0700 Subject: Aluminum Nitride In-Reply-To: <6.2.5.6.2.20080122074812.041da840@stanford.edu> References: <945664f50801191047w3429b02ah9e86c077e80d8fe4@mail.gmail.com> <6.2.5.6.2.20080122074812.041da840@stanford.edu> Message-ID: <945664f50809191215r114a623bh5a4811fb6459f41@mail.gmail.com> Hi again - I have been working with a vendor in San Jose to have aluminum nitride deposited, and I would like to submit a new specmat request. The vendor is Hionix 2363 Bering Drive, San Jose, CA 95131, USA +1(408) 526-2333 www.hionix.com The aluminum nitride sputtering is performed in a system that is only used to aluminum and titanium sputtering, normally for backend CMOS interconnects. Sputtering is performed with an aluminum target with nitrogen ambient at ~200C. This is in contrast with the system at Berkeley which is also used for platinum. My process flow would be as follows: * start with a new DP SOI * clean wafer @ SNF * have titanium underlayer and aluminum nitride sputtered at Hionix (with an additional RCA clean there) * lithography on top of the aluminum nitride (on ASML) * etch the aluminum nitride with phosphoric acid @ 120C on wbgeneral * strip the photoresist * lithography on top of the titanium * etch the titanium using standard ti wet etch on wbmetal * strip the photoresist * blanket sputter aluminum on gryphon * lithography on top of the aluminum * etch with standard al etch on wbmetal (which doesn't attack the aluminum nitride or titanium) * strip the photoresist * frontside lithography with spr220 * frontside STS etch on wafer to release front of cantilevers * strip the photoresist * backside lithography using spr220 * backside STS etch to release wafers * oxide release on AMTEtcher * strip the photoresist The aluminum nitride would only be brought into the lab already deposited on wafers, and the phosphoric acid would be drained down the AWN system once returning to room temperature. Also, the aluminum nitride, aluminum and titanium will be protected by photoresist while in STS and AMTEtcher. I have been characterizing the films with XRD for the past month or so and am ready to start fabricating working devices as soon as the material is approved. Thanks for your consideration and please let me know if you have any questions. - Joey On Tue, Jan 22, 2008 at 8:52 AM, Ed Myers wrote: > Joey, > > One of our weak areas is RF sputtering. This is need for reactive > deposition of insulating materials. As a result, we can not support your > request due to hardware limitations. If you have any questions please let > me know. > > Regards, > Ed > > > At 10:47 AM 1/19/2008, Joey Doll wrote: > >> Hi - >> I'm considering a process which would use aluminum nitride as a >> piezoelectric actuator layer. I wasn't able to find anything mentioned >> about it on the SNF website and was wondering if there is a recipe / >> it would be possible to sputter it on grypon or metallica? It is >> sputtered up at Berkeley >> (http://microlab.berkeley.edu/labmanual/chap6/6.08.html) and I was >> hoping to use it instead of other materials like ZnO or PZT in order >> to keep my wafer semi-clean. Please let me know what you think. >> >> Thanks! >> Joey >> > > > -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Fri Sep 19 15:33:11 2008 From: mtang at stanford.edu (Mary Tang) Date: Fri, 19 Sep 2008 15:33:11 -0700 Subject: Aluminum Nitride In-Reply-To: <945664f50809191215r114a623bh5a4811fb6459f41@mail.gmail.com> References: <945664f50801191047w3429b02ah9e86c077e80d8fe4@mail.gmail.com> <6.2.5.6.2.20080122074812.041da840@stanford.edu> <945664f50809191215r114a623bh5a4811fb6459f41@mail.gmail.com> Message-ID: <48D428A7.3020104@stanford.edu> Hi Joey -- Thanks for the detailed process flow, as really helps... If I read correctly, your request is for etching metal-containing wafers on the stsetch, with the consideration that no metal is expected to be exposed to plasma. I think we'll need a SpecMat quorum to decide that, so can't answer right now. However, I do think that you will have a problem with resist surviving the hot phosphoric acid. I would suggest that either using p5000etch metal chamber to plasma etch AlN (another SpecMat request) or depositing an oxide on top of the AlN, patterning that with a plasma or wet oxide etch, removing the resist, then using the hard mask for the AlN etch. Mary Joey Doll wrote: > Hi again - > I have been working with a vendor in San Jose to have aluminum nitride > deposited, and I would like to submit a new specmat request. > > The vendor is > > Hionix > 2363 Bering Drive, San Jose, CA 95131, USA > +1(408) 526-2333 > www.hionix.com > > The aluminum nitride sputtering is performed in a system that is only > used to aluminum and titanium sputtering, normally for backend CMOS > interconnects. Sputtering is performed with an aluminum target with > nitrogen ambient at ~200C. This is in contrast with the system at > Berkeley which is also used for platinum. > > My process flow would be as follows: > > * start with a new DP SOI > * clean wafer @ SNF > * have titanium underlayer and aluminum nitride sputtered at Hionix > (with an additional RCA clean there) > * lithography on top of the aluminum nitride (on ASML) > * etch the aluminum nitride with phosphoric acid @ 120C on wbgeneral > * strip the photoresist > * lithography on top of the titanium > * etch the titanium using standard ti wet etch on wbmetal > * strip the photoresist > * blanket sputter aluminum on gryphon > * lithography on top of the aluminum > * etch with standard al etch on wbmetal (which doesn't attack the > aluminum nitride or titanium) > * strip the photoresist > * frontside lithography with spr220 > * frontside STS etch on wafer to release front of cantilevers > * strip the photoresist > * backside lithography using spr220 > * backside STS etch to release wafers > * oxide release on AMTEtcher > * strip the photoresist > > The aluminum nitride would only be brought into the lab already > deposited on wafers, and the phosphoric acid would be drained down the > AWN system once returning to room temperature. Also, the aluminum > nitride, aluminum and titanium will be protected by photoresist while > in STS and AMTEtcher. I have been characterizing the films with XRD > for the past month or so and am ready to start fabricating working > devices as soon as the material is approved. > > Thanks for your consideration and please let me know if you have any > questions. > > - Joey > > On Tue, Jan 22, 2008 at 8:52 AM, Ed Myers > wrote: > > Joey, > > One of our weak areas is RF sputtering. This is need for reactive > deposition of insulating materials. As a result, we can not > support your request due to hardware limitations. If you have any > questions please let me know. > > Regards, > Ed > > > At 10:47 AM 1/19/2008, Joey Doll wrote: > > Hi - > I'm considering a process which would use aluminum nitride as a > piezoelectric actuator layer. I wasn't able to find anything > mentioned > about it on the SNF website and was wondering if there is a > recipe / > it would be possible to sputter it on grypon or metallica? It is > sputtered up at Berkeley > (http://microlab.berkeley.edu/labmanual/chap6/6.08.html) and I was > hoping to use it instead of other materials like ZnO or PZT in > order > to keep my wafer semi-clean. Please let me know what you think. > > Thanks! > Joey > > > > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From info at fabsurplus.com Sat Sep 20 00:05:56 2008 From: info at fabsurplus.com (SDI-Fabsurplus) Date: Sat, 20 Sep 2008 07:05:56 +0000 (GMT) Subject: Fabsurplus.com Warehouse Clearance by Auction Message-ID: <12062387.1221894436495.JavaMail.root@server1.fabsurplus.com> Fabsurplus.com Warehouse Clearance ++++++++++++++++++++++++++++++++++ Following recent large scale purchases, we need to free up some warehouse space. Hence, we are LIQUIDATING OUR INVENTORY in Italy and Ireland. ******************************************************************************************* VIEWING OF ASSETS ***************** You are very welcome to come and view any of the assets. 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Trinocular Stereo Zoom Microscope NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=12546 20268 SEKISUI SIGMA 200 K1 Antistatic 200 MM Wafer shipping box 07/06 SOLD IN LOTS OF 144 BOXES RESERVE PRICE PER LOT: $1900 USD TOTAL NUMBER OF LOTS: 70 http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=20268 2859 SEIKO SAI9801S FIB SEM 03/94 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=2859 15615 SEMITOOL ST240 SINGLE SRD 100 mm NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=15615 15616 SEMITOOL ST260D TWO STACK SRD 100 MM 06/92 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=15616 2172 TEL Mark II DEVELOPER 10/90 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=2172 2174 TEL Mark II DEVELOPER 08/91 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=2174 2181 TEL TE 5480 Nitride RIE 12/92 NO RESERVE 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Rocco Galdieri, 6 Napoli 80123 Italy Tel: Italy (39) 335-710-7756 USA: (1) 415-615-2262 Fax Italy (39) 066-051-3344 showe at fabsurplus.com Skype: Stephencshowe http://www.fabsurplus.com A MEMBER OF SEMI Oliver Dunne SDI Semiconductor Instruments Ireland Limited 20, Newtown Abbey Trim, Co. Meath, Ireland Tel: Ireland (353) 4694 37097 Mobile: Ireland (353) 872 985 561 Fax: Ireland (353) 4694 37113 ollie.dunne at fabsurplus.com Skype: sdiireland This message may be considered an advertisement or solicitation. If you would like to opt-out of receiving future commercial email marketing messages from SDI Group , Please reply to this message with the word "remove" in the subject line.If you reply from an e-mail address different from the one you wish to unsubscribe, please send us also the e-mail address you wish to unsubscribe. -------------- next part -------------- A non-text attachment was scrubbed... Name: Fabsurplus_Auction_Sep_2008.xls Type: application/octet-stream Size: 269824 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Auction_Agreement_V6.pdf Type: application/octet-stream Size: 220761 bytes Desc: not available URL: From jcdoll at stanford.edu Sat Sep 20 21:06:44 2008 From: jcdoll at stanford.edu (Joey Doll) Date: Sat, 20 Sep 2008 21:06:44 -0700 Subject: Aluminum Nitride In-Reply-To: <48D428A7.3020104@stanford.edu> References: <945664f50801191047w3429b02ah9e86c077e80d8fe4@mail.gmail.com> <6.2.5.6.2.20080122074812.041da840@stanford.edu> <945664f50809191215r114a623bh5a4811fb6459f41@mail.gmail.com> <48D428A7.3020104@stanford.edu> Message-ID: <945664f50809202106i4149f36bp5e98c6b66a0afa84@mail.gmail.com> Thanks for the feedback re: the phosphoric acid etch, that would have been a major issue. I just found a paper reporting that 25% TMAH at room temperature etches aluminum nitride, so I will use that instead of the hot phosphoric acid. Then I could use aluminum to mask the TMAH etch, unless I'm lucky and room temperature TMAH doesn't attack photoresist like it does at higher temperatures. Using oxide as a phosphoric acid etch mask would have been tricky, because removing it afterwards with HF would have also attacked my titanium underlayer. Anyways though, problem solved I hope. I wasn't too concerned about etching metal-containing wafers on stsetch, because that part of my process is identical to the piezoresistive cantilever process used in the ME342/E341 class process and research projects back to Beth Pruitt's graduate work, at least. I will be careful about that step though. Mainly I wanted to ensure that my use of aluminum nitride in the lab sounds good. Thanks again, Joey On Fri, Sep 19, 2008 at 3:33 PM, Mary Tang wrote: > Hi Joey -- > > Thanks for the detailed process flow, as really helps... If I read > correctly, your request is for etching metal-containing wafers on the > stsetch, with the consideration that no metal is expected to be exposed to > plasma. I think we'll need a SpecMat quorum to decide that, so can't answer > right now. However, I do think that you will have a problem with resist > surviving the hot phosphoric acid. I would suggest that either using > p5000etch metal chamber to plasma etch AlN (another SpecMat request) or > depositing an oxide on top of the AlN, patterning that with a plasma or wet > oxide etch, removing the resist, then using the hard mask for the AlN etch. > > Mary > > Joey Doll wrote: > >> Hi again - >> I have been working with a vendor in San Jose to have aluminum nitride >> deposited, and I would like to submit a new specmat request. >> >> The vendor is >> >> Hionix >> 2363 Bering Drive, San Jose, CA 95131, USA >> +1(408) 526-2333 >> www.hionix.com >> >> >> The aluminum nitride sputtering is performed in a system that is only used >> to aluminum and titanium sputtering, normally for backend CMOS >> interconnects. Sputtering is performed with an aluminum target with nitrogen >> ambient at ~200C. This is in contrast with the system at Berkeley which is >> also used for platinum. >> >> My process flow would be as follows: >> >> * start with a new DP SOI >> * clean wafer @ SNF >> * have titanium underlayer and aluminum nitride sputtered at Hionix (with >> an additional RCA clean there) >> * lithography on top of the aluminum nitride (on ASML) >> * etch the aluminum nitride with phosphoric acid @ 120C on wbgeneral >> * strip the photoresist >> * lithography on top of the titanium >> * etch the titanium using standard ti wet etch on wbmetal >> * strip the photoresist >> * blanket sputter aluminum on gryphon >> * lithography on top of the aluminum >> * etch with standard al etch on wbmetal (which doesn't attack the aluminum >> nitride or titanium) >> * strip the photoresist >> * frontside lithography with spr220 >> * frontside STS etch on wafer to release front of cantilevers >> * strip the photoresist >> * backside lithography using spr220 >> * backside STS etch to release wafers >> * oxide release on AMTEtcher >> * strip the photoresist >> >> The aluminum nitride would only be brought into the lab already deposited >> on wafers, and the phosphoric acid would be drained down the AWN system once >> returning to room temperature. Also, the aluminum nitride, aluminum and >> titanium will be protected by photoresist while in STS and AMTEtcher. I have >> been characterizing the films with XRD for the past month or so and am ready >> to start fabricating working devices as soon as the material is approved. >> >> Thanks for your consideration and please let me know if you have any >> questions. >> >> - Joey >> >> On Tue, Jan 22, 2008 at 8:52 AM, Ed Myers > edmyers at stanford.edu>> wrote: >> >> Joey, >> >> One of our weak areas is RF sputtering. This is need for reactive >> deposition of insulating materials. As a result, we can not >> support your request due to hardware limitations. If you have any >> questions please let me know. >> >> Regards, >> Ed >> >> >> At 10:47 AM 1/19/2008, Joey Doll wrote: >> >> Hi - >> I'm considering a process which would use aluminum nitride as a >> piezoelectric actuator layer. I wasn't able to find anything >> mentioned >> about it on the SNF website and was wondering if there is a >> recipe / >> it would be possible to sputter it on grypon or metallica? It is >> sputtered up at Berkeley >> (http://microlab.berkeley.edu/labmanual/chap6/6.08.html) and I was >> hoping to use it instead of other materials like ZnO or PZT in >> order >> to keep my wafer semi-clean. Please let me know what you think. >> >> Thanks! >> Joey >> >> >> >> >> > > -- > Mary X. Tang, Ph.D. > Stanford Nanofabrication Facility > CIS Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu > > -------------- next part -------------- An HTML attachment was scrubbed... URL: From jcdoll at stanford.edu Sun Sep 21 16:02:48 2008 From: jcdoll at stanford.edu (Joey Doll) Date: Sun, 21 Sep 2008 16:02:48 -0700 Subject: Aluminum Nitride In-Reply-To: <945664f50809202106i4149f36bp5e98c6b66a0afa84@mail.gmail.com> References: <945664f50801191047w3429b02ah9e86c077e80d8fe4@mail.gmail.com> <6.2.5.6.2.20080122074812.041da840@stanford.edu> <945664f50809191215r114a623bh5a4811fb6459f41@mail.gmail.com> <48D428A7.3020104@stanford.edu> <945664f50809202106i4149f36bp5e98c6b66a0afa84@mail.gmail.com> Message-ID: <945664f50809211602y4b3507c7ma29b39cca79a809f@mail.gmail.com> Disregard the part about using aluminum to mask the TMAH; it's likely that the TMAH formulations that don't attack aluminum wouldn't attack the aluminum nitride. I'll need to put some more thought into that. - joey On Sat, Sep 20, 2008 at 9:06 PM, Joey Doll wrote: > Thanks for the feedback re: the phosphoric acid etch, that would have been > a major issue. I just found a paper reporting that 25% TMAH at room > temperature etches aluminum nitride, so I will use that instead of the hot > phosphoric acid. Then I could use aluminum to mask the TMAH etch, unless I'm > lucky and room temperature TMAH doesn't attack photoresist like it does at > higher temperatures. Using oxide as a phosphoric acid etch mask would have > been tricky, because removing it afterwards with HF would have also attacked > my titanium underlayer. Anyways though, problem solved I hope. > I wasn't too concerned about etching metal-containing wafers on stsetch, > because that part of my process is identical to the piezoresistive > cantilever process used in the ME342/E341 class process and research > projects back to Beth Pruitt's graduate work, at least. I will be careful > about that step though. Mainly I wanted to ensure that my use of aluminum > nitride in the lab sounds good. > > Thanks again, > Joey > > On Fri, Sep 19, 2008 at 3:33 PM, Mary Tang wrote: > >> Hi Joey -- >> >> Thanks for the detailed process flow, as really helps... If I read >> correctly, your request is for etching metal-containing wafers on the >> stsetch, with the consideration that no metal is expected to be exposed to >> plasma. I think we'll need a SpecMat quorum to decide that, so can't answer >> right now. However, I do think that you will have a problem with resist >> surviving the hot phosphoric acid. I would suggest that either using >> p5000etch metal chamber to plasma etch AlN (another SpecMat request) or >> depositing an oxide on top of the AlN, patterning that with a plasma or wet >> oxide etch, removing the resist, then using the hard mask for the AlN etch. >> >> Mary >> >> Joey Doll wrote: >> >>> Hi again - >>> I have been working with a vendor in San Jose to have aluminum nitride >>> deposited, and I would like to submit a new specmat request. >>> >>> The vendor is >>> >>> Hionix >>> 2363 Bering Drive, San Jose, CA 95131, USA >>> +1(408) 526-2333 >>> www.hionix.com >>> >>> >>> The aluminum nitride sputtering is performed in a system that is only >>> used to aluminum and titanium sputtering, normally for backend CMOS >>> interconnects. Sputtering is performed with an aluminum target with nitrogen >>> ambient at ~200C. This is in contrast with the system at Berkeley which is >>> also used for platinum. >>> >>> My process flow would be as follows: >>> >>> * start with a new DP SOI >>> * clean wafer @ SNF >>> * have titanium underlayer and aluminum nitride sputtered at Hionix (with >>> an additional RCA clean there) >>> * lithography on top of the aluminum nitride (on ASML) >>> * etch the aluminum nitride with phosphoric acid @ 120C on wbgeneral >>> * strip the photoresist >>> * lithography on top of the titanium >>> * etch the titanium using standard ti wet etch on wbmetal >>> * strip the photoresist >>> * blanket sputter aluminum on gryphon >>> * lithography on top of the aluminum >>> * etch with standard al etch on wbmetal (which doesn't attack the >>> aluminum nitride or titanium) >>> * strip the photoresist >>> * frontside lithography with spr220 >>> * frontside STS etch on wafer to release front of cantilevers >>> * strip the photoresist >>> * backside lithography using spr220 >>> * backside STS etch to release wafers >>> * oxide release on AMTEtcher >>> * strip the photoresist >>> >>> The aluminum nitride would only be brought into the lab already deposited >>> on wafers, and the phosphoric acid would be drained down the AWN system once >>> returning to room temperature. Also, the aluminum nitride, aluminum and >>> titanium will be protected by photoresist while in STS and AMTEtcher. I have >>> been characterizing the films with XRD for the past month or so and am ready >>> to start fabricating working devices as soon as the material is approved. >>> >>> Thanks for your consideration and please let me know if you have any >>> questions. >>> >>> - Joey >>> >>> On Tue, Jan 22, 2008 at 8:52 AM, Ed Myers >> edmyers at stanford.edu>> wrote: >>> >>> Joey, >>> >>> One of our weak areas is RF sputtering. This is need for reactive >>> deposition of insulating materials. As a result, we can not >>> support your request due to hardware limitations. If you have any >>> questions please let me know. >>> >>> Regards, >>> Ed >>> >>> >>> At 10:47 AM 1/19/2008, Joey Doll wrote: >>> >>> Hi - >>> I'm considering a process which would use aluminum nitride as a >>> piezoelectric actuator layer. I wasn't able to find anything >>> mentioned >>> about it on the SNF website and was wondering if there is a >>> recipe / >>> it would be possible to sputter it on grypon or metallica? It is >>> sputtered up at Berkeley >>> (http://microlab.berkeley.edu/labmanual/chap6/6.08.html) and I >>> was >>> hoping to use it instead of other materials like ZnO or PZT in >>> order >>> to keep my wafer semi-clean. Please let me know what you think. >>> >>> Thanks! >>> Joey >>> >>> >>> >>> >>> >> >> -- >> Mary X. Tang, Ph.D. >> Stanford Nanofabrication Facility >> CIS Room 136, Mail Code 4070 >> Stanford, CA 94305 >> (650)723-9980 >> mtang at stanford.edu >> http://snf.stanford.edu >> >> > -------------- next part -------------- An HTML attachment was scrubbed... URL: From patricia.carlson at global-fab.com Wed Sep 24 23:33:28 2008 From: patricia.carlson at global-fab.com (Patricia Carlson) Date: Thu, 25 Sep 2008 02:33:28 -0400 (EDT) Subject: Manufacturing Equipment Auction Message-ID: <1102254762688.1101401002153.9044.6.44023046@scheduler> G-Fab LOGO [http://rs6.net/tn.jsp?e=001g1uZM04lLQzIfY2F9BDjxOU6uqiuBNNNLgjBrcwXSzuHiJ6EvYEz9TIoZiRne-22qSSWhcvC_Y2ujrqLxbfUgngE_4jHf5gveRwqV_h0MjzVEILf3fzW3A==] ~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~ Global Fab Surplus LLC(G-Fab) is auctioning off all our current equipment inventory to the highest bidder. The inventory is located in our Colorado Springs warehouse unless otherwise stated. Included in the inventory are thousands of back end semiconductor spare parts and Semiconductor process, facility and test systems. Below is a full list. All Spec sheets are available on request. Click here for specs and pictures [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq]. Bidding has begun and will end on October 1, 2008 at close of business Pacific time. BID NOW..... TIME IS RUNNING OUT SOON. Inspections can be arranged at any time. Some tools have already been crated and barrier bagged for international shipping, the buyer is responsible for all un-crating and re-crating costs associated with the inspection. Item 01224 (LAM Alliance) was sold with a "Buy it now" offer. If you are interested in a "buy it now" price on anything just send us an email. The tools WILL sell to the highest bidder or the first Buy it Now offer on each tool. Equipment list Item # Description Minimum Bid 01221 [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] IPEC 372m CMP [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] (Very Clean) [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] $15,000 [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] 01222 [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] IPEC 372m CMP [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] (Very Clean) [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] $15,000 [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] 01223 [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] IPEC 676 CMP [http://rs6.net/tn.jsp?e=001g1uZM04lLQw940hjm_X8Jeef4XcmFx-HZYhTYyWbIMj0Wmj5tOFtDHw2B4wCn1sNGJ_nJNCggYUt6dgEt2gax7nPJuAz6dYfoZA23GVt1k_0vQmxI_hbPZE1DnIy-kjVie18-oTXq6BdNgfNVX-47IWt1bZjHXLbSILyJtqT0Ig=] (Very clean) [http://rs6.net/tn.jsp?e=001g1uZM04lLQw940hjm_X8Jeef4XcmFx-HZYhTYyWbIMj0Wmj5tOFtDHw2B4wCn1sNGJ_nJNCggYUt6dgEt2gax7nPJuAz6dYfoZA23GVt1k_0vQmxI_hbPZE1DnIy-kjVie18-oTXq6BdNgfNVX-47IWt1bZjHXLbSILyJtqT0Ig=] $10,000 01224 [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] LAM Alliance A4 etcher [http://rs6.net/tn.jsp?e=001g1uZM04lLQwlNucFOVMrqqdVTGIkrEaUyOr-JwsK4mgobI31L0XZeC4nbsAolVn3x8doKZbRmGD2qdal1-xOSmMvS4POCal5cKevY-_dtko2YhJ8PLiDcKaL9uu_ZZI-wGqcC8RxozzWy1-L128nKdExz8loLV4L4wbHHzDJhaioCtXSNMVvd_W1A5hq0HyUK3n5878NJGs=] SOLD (4520XL (oxide etch) chamber, TCP9400SE (polyetch), RF Gen Rack, Pump Stack, [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] Gas Cabinets, Electrical Cabinet and accessories (computers,etc.) [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] 01225 [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] LAM Rainbow 4428 (In like new condition) [http://rs6.net/tn.jsp?e=001g1uZM04lLQw-NlwqVj6d1Qy34awuDTBb0EZvFjISVd0e491Z9Oe33f4yaOmVEnb-0ggeOVjaXBUYuIuqlCnZqrIgGDgpYID8h_C65bHU-PHC4pDynj66Mq290k49BO9yFEZsbHRvrgfWlxLFc1kL9CydNsxD_J4r_oya2M1GJKpPk_InQruhSQ==] $20,000 01226 [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] Biorad/Accent Q7 Overlay system [http://rs6.net/tn.jsp?e=001g1uZM04lLQzm47Xj7YqIrjF7jfa8n0q_fchV2OsKSJOXsp-VVQLhsbpGCinifUMegqzf8MLrKTCUKpqm4E7nzpN0yGV5t7TV9WoEiDSBK04U_DtcfnXjRfwXJlB_snM8dTh7lH5SB7AaIdE58cNwbOlbdk6UQNbx-QbCd3MAa7G2McP-JjNRSQ==] (Very Clean) [http://rs6.net/tn.jsp?e=001g1uZM04lLQzm47Xj7YqIrjF7jfa8n0q_fchV2OsKSJOXsp-VVQLhsbpGCinifUMegqzf8MLrKTCUKpqm4E7nzpN0yGV5t7TV9WoEiDSBK04U_DtcfnXjRfwXJlB_snM8dTh7lH5SB7AaIdE58cNwbOlbdk6UQNbx-QbCd3MAa7G2McP-JjNRSQ==] $20,000 01227 [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] SVG 90s I-Line Tracks [http://rs6.net/tn.jsp?e=001g1uZM04lLQwALQVoFLNw0wkXBURorsk8y1BADzDkwY6rTmIChMCl_BwZgzfwdflwmdmXSzX6CE0sX7L28jYBvWXgQFCJGZ108NRX4jfENfYi8yoWEc99boXyEWI2RLzs4q05dMpC99OJ1KQIx_VvYkpvIVNFWSrAPHQm8JsAOnfHOh_otwmLfA==] (Very Clean) [http://rs6.net/tn.jsp?e=001g1uZM04lLQwALQVoFLNw0wkXBURorsk8y1BADzDkwY6rTmIChMCl_BwZgzfwdflwmdmXSzX6CE0sX7L28jYBvWXgQFCJGZ108NRX4jfENfYi8yoWEc99boXyEWI2RLzs4q05dMpC99OJ1KQIx_VvYkpvIVNFWSrAPHQm8JsAOnfHOh_otwmLfA==] $10,000 01228 [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] SVG 90s I-Line Tracks [http://rs6.net/tn.jsp?e=001g1uZM04lLQwALQVoFLNw0wkXBURorsk8y1BADzDkwY6rTmIChMCl_BwZgzfwdflwmdmXSzX6CE0sX7L28jYBvWXgQFCJGZ108NRX4jfENfYi8yoWEc99boXyEWI2RLzs4q05dMpC99OJ1KQIx_VvYkpvIVNFWSrAPHQm8JsAOnfHOh_otwmLfA==] (Very Clean) [http://rs6.net/tn.jsp?e=001g1uZM04lLQwALQVoFLNw0wkXBURorsk8y1BADzDkwY6rTmIChMCl_BwZgzfwdflwmdmXSzX6CE0sX7L28jYBvWXgQFCJGZ108NRX4jfENfYi8yoWEc99boXyEWI2RLzs4q05dMpC99OJ1KQIx_VvYkpvIVNFWSrAPHQm8JsAOnfHOh_otwmLfA==] $10,000 01229 [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] Teradyne T666 Static tester [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] $250 [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] 01230 [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] Four (4) pallats of misc. back end spare parts [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] (all new) [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] $5,000 [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] (Over $100K value new) 01231 [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] Ecosys Exhaust scrubber [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] $500 [http://rs6.net/tn.jsp?e=001g1uZM04lLQxoa4U_R4F1u1QPN5Hw_SN3kSfhydZNyZKG06fdzFzMuxS4uo9PZyz93lZJKu9IMrN7y-73AjgBk07MasXF3UI2ecWd-E7iN72pyxeKzvvxlY52WgGeo67y8i3X-7v_c7GQcIimRt2NNcyt2KNrenXq] All bids must be made by either official bid form below or on company letterhead with the below information and returned by email, fax or other form of postal mail and must be received prior to auction closing date and time. Bids can be made on individual equipment or on multiple tools with a single bulk price. Successful buyer is responsible for any taxes, shipping and crating costs associated with the removal of tools and/or parts. Removal must be completed within two weeks of auction close unless special arrangements have been made between buyer and Global Fab Surplus in advance. All tools and parts are sold as-is where-is with no warranties expressed or implied. Everything is FOB ex works. OEM software license transfers fees are the responsibility of the buyer. Payments terms as follows: ? 20% non-refundable deposit within 48 hours of auction close. ? 80% within 3 business days after auction close and prior to removal Global Fab Surplus reserves the right to: ? Refuse any bids turned in late or bids that do not meet the minimum requirements. ? Extend the auction dates ? Close the auction or remove a tool from auction early without notice ? Make award on factors other than costs. ? Auction is subject to G-Fabs standard terms and conditions available on request. Bid form must be complete and signed. Copies of the bid form can be provided by email on fax on request. This is a legal binding agreement between bidder and Global Fab Surplus. If awarded, the winning bid buyer is legally bound by the laws of the state of Colorado and is responsible for all payments in full. ALL Terms and Conditions (T's & C's) listed in the Global Fab Surplus T's & C's are in effect and cannot be over ridden by any other without prior written agreement between all parties. A copy of these are available on request or by clicking here. Date of Proposal: Company Main Phone number: Street Address: Primary Contact: Direct Phone #: Email Address: Secondary Contact: Secondary Phone #: Secondary Email: Item # Description Bid Price Signing below is acceptance of the terms and conditions of this agreement as stated in the Global Fab Surplus T's & C's. Bidders will be notified of winning bids within 24 hours of auction close. Name Title Signature Date: ~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~ Global Fab Surplus Semiconductor Equipment LLC [http://rs6.net/tn.jsp?e=001g1uZM04lLQzIfY2F9BDjxOU6uqiuBNNNLgjBrcwXSzuHiJ6EvYEz9TIoZiRne-22qSSWhcvC_Y2ujrqLxbfUgngE_4jHf5gveRwqV_h0MjzVEILf3fzW3A==], provides surplus, used, rebuilt and refurbished semiconductor process equipment to integrated device manufacturers, wafer foundries, research and development sites and to the semiconductor refurbishing and rebuilding community. We buy and sell used semiconductor equipment, including backend, front end and special application tools and toolsets. Visit us online at: www.global-fab.com [http://rs6.net/tn.jsp?e=001g1uZM04lLQzIfY2F9BDjxOU6uqiuBNNNLgjBrcwXSzuHiJ6EvYEz9TIoZiRne-22qSSWhcvC_Y2ujrqLxbfUgngE_4jHf5gveRwqV_h0MjzVEILf3fzW3A==] for a complete list of tools available. ~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~ Forward email http://ui.constantcontact.com/sa/fwtf.jsp?m=1101401002153&ea=specmat at snf.stanford.edu&a=1102254762688 This email was sent to specmat at snf.stanford.edu by patricia.carlson at global-fab.com. Update Profile/Email Address http://visitor.constantcontact.com/d.jsp?v=001RO3dPrXHwIHjNc18qg2uYpS-p4D8dFWv_dOkI1JrxbMe-UHA8IhnF6WJk_e2Lfkt_JviRGeDtlo%3D&p=oo Instant removal with SafeUnsubscribe(TM) http://visitor.constantcontact.com/d.jsp?v=001RO3dPrXHwIHjNc18qg2uYpS-p4D8dFWv_dOkI1JrxbMe-UHA8IhnF6WJk_e2Lfkt_JviRGeDtlo%3D&p=un Privacy Policy: http://ui.constantcontact.com/roving/CCPrivacyPolicy.jsp Global Fab Surplus | 195 Kirkstone Lane | Colorado Springs | CO | 80906 -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Thu Sep 25 11:43:11 2008 From: mtang at stanford.edu (Mary Tang) Date: Thu, 25 Sep 2008 11:43:11 -0700 Subject: [Fwd: Re: Lampoly recipe for silicon-rich nitride] Message-ID: <48DBDBBF.4050508@stanford.edu> Hi all -- This material was approved for etch on the lampoly ("trace" Er.) OK for amtetcher as well? Mary -------- Original Message -------- Subject: Re: Lampoly recipe for silicon-rich nitride Date: Thu, 25 Sep 2008 10:06:08 -0700 From: Aaron Hryciw To: Mary Tang References: <4d36fb940809241236h456c4846r6385a3de53e53196 at mail.gmail.com> Hi Mary ? So, Jim is suggesting that AMT would be best for this (NF3 via etch). My SRN etch-test wafers will be "clean," but since the actual device film I'll want to etch will contain a little less than 1% erbium (which is a non-standard metal), does this mean that AMT is completely out of the picture? Is there some sort of decontamination procedure I could do after my etch, which would allow me to use this tool for the Er-doped films? Cheers! ? Aaron On Wed, Sep 24, 2008 at 10:00 PM, Jim McVittie > wrote: Aaron, Ok, since you do not care about how much Si you etch, the Lam is not automatically off the table. But I still would not go with the Lam since really do not have a nitride etch process in the Lam. If I was you, I would go with the P5000 since it is quick and uniform. The std oxide etch process process will work fine or you can use a nitride process. If you already know the AMT but not the P5000, then go with the AMT. THe via etch shouls work fine. I would timed etch since you have non-critical needs. If really want to use endpoint, I can probably it up for you, Jim On Wed, 24 Sep 2008, Aaron Hryciw wrote: > Hi Mary, Jim ? > > The purpose of this etch will be to define silicon-rich nitride (SRN) > microdisks, the pillars of which will afterwards be defined by a TMAH etch. > As such, my tolerance for etching into the underlying Si is not too > critical, just so long as I punch through the SRN. To answer your > questions: > > 1. What kind of film are you etching exactly? (Target composition and > > thickness.) > > > > The final process wafers will be: 1) SRN, ~49% Si, 51% N, and 2) SRN doped > with up to 1% Er. In both cases, the film will be ~50 nm thick. > > 2. What feature size and what is your masking material (thickness and type > > of resist, whether there's a sacrificial mask.) > > > > For the first experiments, the features will be widely-spaced circles, > ranging from ~1 to 100 um in diameter. The intended masking material is > Shipley 3612, patterned using the ASML (1 um thick? 1.6 um? with/without UV > cure? --> will test). If necessary, however, a sacrificial mask (Cr?) could > certainly be used. > > > > 3. What are you stopping on and what is your tolerance for etching into > > this? > > > > I will be stopping on Si. As mentioned above, so long as I manage to punch > through the SRN, the tolerance for etching into the underlying Si substrate > is quite large; for instance, I imagine I could etch a micron into the Si > without any problem. Presumably, since the etch rate of Si should be much > larger than SRN, it should be detectable as a spike in Si-related byproducts > in the endpoint detection plots, correct? > > 4. What are your uniformity (and selectivity) requirements? > > > > I will have several dies on the wafer, each with the 1 to 100 um diameter > (roughly equally on a logarithmic scale) disks on them, and for the > experiments, I will be looking at single disks, so uniformity across the > wafer will also not be too much of an issue. Even 10% or so should be > fine. Since there is only a single masking/etching step, the only material > being etched is the SRN, so selectivity isn't really a problem, except > insofar as I can tell when I've reached the Si. If endpoint detection is > not possible, and I have to go with a timed etch (after characterising the > process with test wafers), so be it! > > 5. I'm presuming that your substrates are 100 mm silicon rounds of standard > > thickness? > > > > Correct. > > Thanks again to both of you for all your help. > > Cheers! > > ? Aaron > > > On Wed, Sep 24, 2008 at 10:55 AM, Mary Tang > wrote: > > > Hi Aaron -- > > > > Jim is absolutely right -- my apologies, I think I confused yours with > > another project and didn't realize you were stopping on silicon. I don't > > know about this machine specifically, but silicon etches about an order of > > magnitude faster with SF6 than silicon nitride (stoichiometric). > > > > As I neglected to perform due diligence before by asking you a bunch of > > questions, I'm going to ask right now (and no doubt, Jim will have more.) > > > > 1. What kind of film are you etching exactly? (Target composition and > > thickness.) > > 2. What feature size and what is your masking material (thickness and type > > of resist, whether there's a sacrificial mask.) > > 3. What are you stopping on and what is your tolerance for etching into > > this? > > 4. What are your uniformity (and selectivity) requirements? > > 5. I'm presuming that your substrates are 100 mm silicon rounds of standard > > thickness? > > > > Again, sorry about that -- > > > > Mary > > > > > > Jim McVittie wrote: > > > >> Hi, > >> > >> I just sent you a copy of a note I sent Mary. We never got great Nitride > >> results in our Lam. The other tools gave better results so we never push > >> the Lam to get a good niride process. I would NOT use the Lam to stop on > >> Si. It is a Si etcher and not optimized to stop on Si. You need to use an > >> oxide etcher which has the polymer deposition which will slow down the > >> etch rate when you hit Si. SF6 is not a good chice since it loves to etch > >> etch Si. I can help you if you want to use the AMT or P5000. > >> > >> Jim > >> > >> > >> On Wed, 24 Sep 2008, Aaron Hryciw wrote: > >> > >> > >> > >>> Hi Jim ? > >>> > >>> I need an anisotropic etch recipe for silicon-rich nitride (SRN); > >>> ultimately, I'll need to etch through a 350-nm-thick SRN film, stopping > >>> on > >>> Si. Mary suggested using the lampoly tool with a SF6-based chemistry, > >>> and > >>> said that you would likely be able to offer some advice as how best to > >>> proceed. She said that recipe 99 (a "clean" recipe with SF6 and Cl with > >>> no > >>> bias, for general chamber cleaning) might be a good place to start, and > >>> she > >>> also sent me a link to the standard nitride recipe (SF6 and He) for > >>> etching > >>> on the Lam1 tool in Berkeley's Microlab (although this is quite a > >>> different > >>> tool compared to SNF's). > >>> > >>> I'm going to ask Maurice for some dummy low-stress nitride (which are > >>> apparently quite Si-rich) to use as etch-test wafers, and I was hoping > >>> you > >>> could give me a few lampoly "rules of thumb" (pressures, RF power, bias, > >>> etc.) for anisotropic SF6-based etching which I could use as a starting > >>> point. Many thanks! > >>> > >>> Cheers! > >>> > >>> ? Aaron > >>> > >>> > >>> > >>> > >>> > >> > >> > >> > > > > > > -- > > Mary X. Tang, Ph.D. > > Stanford Nanofabrication Facility > > CIS Room 136, Mail Code 4070 > > Stanford, CA 94305 > > (650)723-9980 > > mtang at stanford.edu > > http://snf.stanford.edu > > > > > > > -- -------------------------------------------------------------- Jim McVittie, Ph.D. Senior Research Scientist Allen Center for Integrated Systems Electrical Engineering Stanford University jmcvittie at stanford.edu Rm. 336, 330 Serra Mall Fax: (650) 723-4659 Stanford, CA 94305-4075 Tel: (650) 725-3640 -- Aaron Hryciw Postdoctoral Scholar Geballe Laboratory for Advanced Materials Stanford University 476 Lomita Mall (04-490) McCullough Building, Rm. 325 Stanford, CA 94305-4045 Tel.: (650) 723-5840 Fax.: (650) 736-1984 -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From info at fabsurplus.com Mon Sep 29 14:17:19 2008 From: info at fabsurplus.com (SDI-Fabsurplus) Date: Mon, 29 Sep 2008 21:17:19 +0000 (GMT) Subject: Fabsurplus.com Clearance SALE CLOSES TOMMORROW AT 5pm PACIFIC TIME Message-ID: <33406149.1222723121989.JavaMail.root@server1.fabsurplus.com> Fabsurplus.com Warehouse Clearance-SALE CLOSES TOMMORROW AT 17 PACIFIC TIME +++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++ DON'T FORGET TO BID IN OUR inventory reduction sale closing tomorrow ******************************************************************************************* SUBMITTING A BID **************** All assets will be sold by "Closed bid". To submit a bid, please complete the attached bid submission form and send it to: info at fabsurplus.com or ollie.dunne at fabsurplus.com ******************************************************************************************* CLOSING DATE ************ All bids should be submitted before 17:00 PST on Tuesday, 30th September ,PST You will be notified of your winning bids within 48 hours of the closing date. CRATING COSTS / TRANSPORT COSTS ******************************* Many people have mailed us about crating costs. I attach an additional file detailing crating costs of some items. We are happy to crate for you at a low rate and also arrange transport quotes and export clearance from Italy/ Ireland FREE of charge. EQUIPMENT WILL BE REMOVED FROM OUR FACILITIES AND LOADED ONTO INCOMING TRANSPORT FREE OF CHARGE ******************************************************************************************* ASSET CATALOGUE ******************************************************************************************* A few lots have already sold so have been withdrawn. For further details on each line item, please visit the Website links shown below and in the attached excel file. 17394 Accretech/TSK APM 90A Prober 01/97 RESERVE PRICE: 10,000 USD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=17394 21127 Accretech/TSK APM 90A Prober 11/97 RESERVE PRICE: 10,000 USD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=21127 21133 Accretech/TSK APM 90A Prober 10/95 RESERVE PRICE: 10,000 USD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=21133 17817 AIS CONVEY 8 WAFER SORTER 200 MM 02/06 RESERVE PRICE: 9,900 USD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=17817 21125 AIS CONVEY 8 WAFER SORTER 200 MM 02/06 RESERVE PRICE: 9,900 USD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=21125 2669 ANGELANTONI T600 TU5 BAKE OVEN 08/95 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=2669 4228 ANGELANTONI T600 TU5 BAKE OVEN 08/95 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=4228 6560 ANGELANTONI T600 TU5 BAKE OVEN 08/95 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=6560 10637 Angelantoni T600 TUS BAKE OVEN 08/95 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=10637 3419 Applied Materials P5000 CVD SYSTEM 01/94 RESERVE PRICE: 20,000 USD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=3419 5229 Applied Materials Mod 1 RTP Chamber 01/95 1 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=5229 5733 Applied Materials Mod 1 RTP Chamber 01/95 1 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=5733 11003 Applied Materials EXCITE IPM 832 BARE SILICON WAFER INSPECTION 06/00 RESERVE PRICE: 20,000 USD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=11003 11563 Applied Materials 0010-00557 rev A Heat Exchanger 12/88 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=11568 11568 Applied Materials 0020-0323 REV H Heat Exchanger NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=11568 11569 Applied Materials 0290-09018 Rev F Heat Exchanger 04/96 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=11569 16433 Applied Materials Producer PECVD TWIN 06/01 RESERVE PRICE: 950,000 USD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=16433 19332 Applied Materials 8310 Oxide Etcher 150 mm 01/06/93 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=19332 2806 ATOMIKA TXRF8010 TXRF 01/94 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=2806 2827 Blue M DCC-336EY-MP Clean room oven 12/97 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=2827 16181 BLUE M DCA-256CY-MP CURE OVEN NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=16181 16277 Blue M DCC 206CY BAKE OVEN NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=16277 15726 BRANSON/IPC S3000 Asher/Etcher NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=15726 11198 CANON FPA 3000 EX3 LITHO/STEPPER DUV 08/99 RESERVE PRICE: 30,000 USD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=11198 19309 Canon FPA 1550 Mark IV g-Line Stepper 08/91 RESERVE PRICE: 30,000 USD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=19309 12125 Codonics NP 1660M X-RAY PRINTER NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=12125 21121 Comet R20 Wafer sorter 06/04 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=21121 8080 Dionex 4500i Chromatograph 06/90 1 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=8080 21124A Edwards iQDP 80 VACUUM PUMP 05/99 RESERVE PRICE: 9,999 USD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=21124 21124B Edwards iQDP 80 VACUUM PUMP 05/99 RESERVE PRICE: 9,999 USD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=21124 21124C Edwards iQDP 80 VACUUM PUMP 05/99 RESERVE PRICE: 9,999 USD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=21124 21124D Edwards iQDP 80 VACUUM PUMP 05/99 RESERVE PRICE: 9,999 USD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=21124 21124E Edwards iQDP 80 VACUUM PUMP 05/99 RESERVE PRICE: 9,999 USD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=21124 11578 ENVIRONMENTAL AIR CORP. 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5000 USD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=12995 1861 MICROCONTROL "P.F.P UV""Eight" Detaper 08/97 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=1861 17870A MICROCONTROL MWEP UV WAFER ERASER 08/97 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=17870 17870B MICROCONTROL MWEP UV WAFER ERASER 08/97 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=17870 17870C MICROCONTROL MWEP UV WAFER ERASER 08/97 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=17870 13053 MovinCool 15SFE Spot Cooling System 07/96 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=13053 11111 Nikon NWL851M Wafer auto loader 04/96 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=11111 13052 NIKON MM-40 Two Axis Measurment Microscope 11/95 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=13052 2822 Olympus BHMJL Microscope 01/91 RESERVE PRICE: 5000 USD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=2822 5755 Olympus BH3 MJL A4 Microscope 01/91 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=5755 5811 Olympus BHMJL Microscope 01/91 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=5811 5812 Olympus BHMJL Microscope 01/91 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=5812 15727 PMS INC. MINILAS-310 (5) PARTICLE MEASURING SYSTEM WITH PRINTER 04/99 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=15727 5223 Perkin Elmer SIMAA 6000 AA Spectrometer with autosampler 08/95 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=5223 5225 PLASMOS SD 4000 Ellipsometer 07/93 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=5225 10638A POLY DESIGN 200 mm Quartz Tube Storage Trolly 06/00 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=10638 10638B POLY DESIGN 200 mm Quartz Tube Storage Trolly 06/00 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=10638 10638C POLY DESIGN 200 mm Quartz Tube Storage Trolly 06/00 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=10638 10638D POLY DESIGN 200 mm Quartz Tube Storage Trolly 06/00 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=10638 10638E POLY DESIGN 200 mm Quartz Tube Storage 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Ellipsometer 05/86 SOLD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=15614 12599 RVSI LS 3900 DB Lead Scanner 11/97 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=12599 10636 SAPI Fume Hood 06/95 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=10636 20245 sciencescope Binocular Microscope Head SOLD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=20245 15639 SCIENCSCOPE SSZ MICROSCOPE SOLD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=15639 12543 Scienscope SSZ Stereo Zoom Microscope NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=12543 12544 Scienscope SZ-BD-B2 SSZ Trinocular Stereo Zoom Microscope SOLD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=12544 12545 Scienscope XTL-VPLUS SSZ Binocular Stereo Zoom Microscope SOLD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=12545 12546 Scienscope XTL-V PLUS SSZ Trinocular Stereo Zoom Microscope SOLD http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=12546 20268 SEKISUI SIGMA 200 K1 Antistatic 200 MM Wafer shipping box 07/06 SOLD IN LOTS OF 144 BOXES RESERVE PRICE PER LOT: $1900 USD TOTAL NUMBER OF LOTS: 70 http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=20268 2859 SEIKO SAI9801S FIB SEM 03/94 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=2859 15615 SEMITOOL ST240 SINGLE SRD 100 mm NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=15615 15616 SEMITOOL ST260D TWO STACK SRD 100 MM 06/92 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=15616 2172 TEL Mark II DEVELOPER 10/90 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=2172 2174 TEL Mark II DEVELOPER 08/91 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=2174 2181 TEL TE 5480 Nitride RIE 12/92 NO RESERVE http://www.fabsurplus.com/sdi_catalog/salesItemDetails.do?id=2181 21064 TEL MB2 730 HT 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081-575-0506 Fax Italy (39) 066-051-3344 showe at fabsurplus.com Skype: Stephencshowe http://www.fabsurplus.com A MEMBER OF SEMI Oliver Dunne SDI Semiconductor Instruments Ireland Limited 20, Newtown Abbey Trim, Co. Meath, Ireland Tel: Ireland (353) 4694 37097 Mobile: Ireland (353) 872 985 561 Fax: Ireland (353) 4694 37113 ollie.dunne at fabsurplus.com Skype: sdiireland This message may be considered an advertisement or solicitation. If you would like to opt-out of receiving future commercial email marketing messages from SDI Group , Please reply to this message with the word "remove" in the subject line.If you reply from an e-mail address different from the one you wish to unsubscribe, please send us also the e-mail address you wish to unsubscribe. -------------- next part -------------- A non-text attachment was scrubbed... Name: Auction_Agreement_V6.pdf Type: application/octet-stream Size: 220761 bytes Desc: not available URL: -------------- next part -------------- WEIGHTS, DIMENSIONS AND ESTIMATED CRATING COSTS ********************************************** The crating is full specification crating. This includes certified wood, dessicant, inner bubble wrap, barrier bag, vacuum seal ,export standard crating, It may be possible to reduce costs by removing some of the featured items from the crating specification. # DESCRIPTION W X L X H (cm) weight (kg) price (Euro) 3419 AMAT P5000 180 X 110 X 180 cm 400 kg 190 euro 3419 AMAT P5000 230 X 160 X 240 cm 1500 kg 1600 euro 3419 AMAT P5000 60 X 70 X 80 cm 100 kg 100 euro 2742 AMAT 8310 120 X 100 X 210 cm 1500 kg 1000 euro 2742 AMAT 8310 75 X 70 X 130 cm 100 kg 150 euro 2742 AMAT 8310 110 X 70 X 120 cm 100 kg 170 euro 10637 ANGELANTONI 190 X 130 X 260 cm 500 kg 1100 euro 4228 ANGELANTONI 190 X 130 X 260 cm 500 kg 1100 euro 2669 ANGELANTONI 190 X 130 X 260 cm 500 kg 1100 euro 6560 ANGELANTONI 190 X 130 X 260 cm 500 kg 1100 euro 2806 ATOMIKA 8010 150 X 130 X 200 cm 300 kg 800 euro 2827 Blue M Oven 120 x 100 x 220 cm 800 kg 1500 euro 11198 CANON EX3 180 X 90 X 250 cm 2000 kg 1300 euro 11198 CANON EX3 90 X 90 X 100 cm 100 kg 150 euro 11198 CANON EX3 70 X 100 X 65 cm 150 kg 150 euro 11198 CANON EX3 150 X 70 X 100 cm 250 kg 380 euro 11198 CANON EX3 150 X 100 X 130 cm 200 kg 380 euro 11198 CANON EX3 90 X 90 X 160 cm 300 kg 280 euro 11198 CANON EX3 180 X 160 X 200 cm 4000 kg 4000 euro 11198 CANON EX3 105 X 75 X 200 cm 200 kg 400 euro 11198 CANON EX3 80 X 70 X 100 cm 100 kg 100 euro 11198 CANON EX3 220 X 100 X 260 cm 1000 kg 1000 euro 11198 CANON EX3 150 X 250 X 40 cm 100 kg 350 euro 11198 CANON EX3 170 X 150 X 80 cm 200 kg 500 euro 11198 CANON EX3 160 X 80 X 150 cm 500 kg 450 euro 10278 CANON MK IV 180 X 140 X 200 cm 4000 kg 4000 euro 10278 CANON MK IV 100 X 80 X 260 cm 300 kg 580 euro 10278 CANON MK IV 100 X 80 X 100 cm 100 kg 150 euro 10278 CANON MK IV 60 X 100 X 110 cm 150 kg 150 euro 10278 CANON MK IV 140 X 120 X 60 cm 100 kg 150 euro 10278 CANON MK IV 120 X 100 X 120 cm 200 kg 200 euro 10278 CANON MK IV 100 X 80 X 230 cm 300 kg 300 euro 10278 CANON MK IV 90 X 80 X 220 cm 200 kg 300 euro 10278 CANON MK IV 130 X 80 X 240 cm 550 kg 550 euro 1570 FSI EXCALIBUR 210 X 140 X 200 cm 850 kg 850 euro 1608 HITACHI 6280H 170 X 125 X 185 cm 800 kg 900 euro 1608 HITACHI 6280H 60 X 90 X 120 cm 100 kg 150 euro 1608 HITACHI 6280H 110 X 70 X 200 cm 300 kg 450 euro 1608 HITACHI 6280H 70 X 70 X 190 cm 200 kg 250 euro 6564 IPEC 472 240 X 220 X 250 cm 1000 kg 3000 euro 15493A KLA-T 7700 175 X 130 X 200 cm 600 kg 550 euro 15493B KLA-T 7700 175 X 130 X 200 cm 600 kg 550 euro 1704 KLA-T 8100 230 X 140 X 230 cm 1500 kg 1500 euro 1691 KLA-T 259 120 X 100 X 200 cm 600 kg 500 euro 1691 KLA-T 259 120 X 120 X 160 cm 300 kg 400 euro 1680 KLA-T 2132 170 X 80 X 200 cm 350 kg 650 euro 1680 KLA-T 2132 160 X 110 X 200 cm 400 kg 680 euro 4963 KOKUSAI DJ640 80 X 100 X 250 cm 200 kg 500 euro 4963 KOKUSAI DJ640 400 X 180 X 270 cm 1200 kg 3000 euro 4963 KOKUSAI DJ640 140 X 120 X 300 cm 400 kg 1000 euro 4963 KOKUSAI DJ640 130 X 240 X 280 cm 2000 kg 1700 euro 4963 KOKUSAI DJ640 90 X 70 X 100 cm 600 kg 300 euro 10345 LEO GIKEN 180 x 120 x 130 cm 300 kg 600 euro 1861 Microctrl UV8 160 x 110 x 190 cm 500 kg 680 euro 2757 MATRIX 403 120 X 80 X 140 cm 500 kg 300 euro 2822 OLYMPUS 120 X 130 X 100 cm 150 kg 200 euro 5811 OLYMPUS 140 X 65 X 70 cm 100 kg 150 euro 10638 Qtz strg tube 65 X 80 X 200 cm 400 kg 300 euro 5223 PE SIMMA 110 X 140 X 80 cm 200 kg 200 euro 5225 PLASMOSSD4000 170 X 110 X 180 cm 500 kg 800 euro 10386 POLYFLOW 525 230 X 160 X 260 cm 800 kg 1350 euro 2859 SEIKO FIB 100 X 80 X 210 cm 1000 kg 400 euro 2859 SEIKO FIB 130 X 110 X 150 cm 150 kg 400 euro 2859 SEIKO FIB 120 X 180 X 180 cm 800 kg 900 euro 2172 TEL MARK 2 135 X 115 X 190 cm 500 kg 700 euro 2172 TEL MARK 2 290 X 130 X 155 cm 900 kg 900 euro 2172 TEL MARK 2 150 X 110 X 145 cm 500 kg 650 euro 2174 TEL MARK 2 310 X 120 X 150 cm 800 kg 1300 euro 2174 TEL MARK 2 140 X 100 X 190 cm 400 kg 700 euro 2174 TEL MARK 2 100 X 90 X 150 cm 800 kg 400 euro 2181 TEL TE5480 220 X 120 X 210 cm 1200 kg 1300 euro 2181 TEL TE5480 110 X 90 X 195 cm 200 kg 500 euro 2181 TEL TE5480 90 X 60 X 200 cm 200 kg 1300 euro 2181 TEL TE5480 100 X 80 X 85 cm 200 kg 150 euro 2181 TEL TE5480 65 X 80 X 110 cm 1200 kg 150 euro 2181 TEL TE5480 55 X 45 X 60 cm 80 kg 100 euro 2181 TEL TE5480 70 X 70 X 200 cm kg 170 euro 8090 TOHO KASEI 220 X 270 X 280 cm 700 kg 2500 euro 8090 TOHO KASEI 220 X 270 X 280 cm 700 kg 2500 euro 8090 TOHO KASEI 150 X 110 X 120 cm 100 kg 400 euro 8090 TOHO KASEI 105 X 105 X 85 cm 250 kg 270 euro -------------- next part -------------- A non-text attachment was scrubbed... Name: Fabsurplus_Auction_Sep_2008.xls Type: application/octet-stream Size: 269824 bytes Desc: not available URL: From mtang at snf.stanford.edu Tue Sep 30 16:29:49 2008 From: mtang at snf.stanford.edu (Mary Tang) Date: Tue, 30 Sep 2008 16:29:49 -0700 Subject: [Fwd: Re: Lampoly recipe for silicon-rich nitride] In-Reply-To: <48DBDBBF.4050508@stanford.edu> References: <48DBDBBF.4050508@stanford.edu> Message-ID: <48E2B66D.4080603@snf.stanford.edu> Hi again -- Aaron would like to be able to etch polysilicon with <1% Erbium in amtetcher. It was approved for lampoly -- how about amtetcher? Can we give him an answer in the next day or two? Masks are arriving and he'd like to get his etch processes characterized.... Thanks, Mary Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu Mary Tang wrote: > Hi all -- > > This material was approved for etch on the lampoly ("trace" Er.) OK > for amtetcher as well? > > Mary > > -------- Original Message -------- > Subject: Re: Lampoly recipe for silicon-rich nitride > Date: Thu, 25 Sep 2008 10:06:08 -0700 > From: Aaron Hryciw > To: Mary Tang > References: > <4d36fb940809241236h456c4846r6385a3de53e53196 at mail.gmail.com> > > > > > Hi Mary ? > > So, Jim is suggesting that AMT would be best for this (NF3 via etch). > My SRN etch-test wafers will be "clean," but since the actual device > film I'll want to etch will contain a little less than 1% erbium > (which is a non-standard metal), does this mean that AMT is completely > out of the picture? Is there some sort of decontamination procedure I > could do after my etch, which would allow me to use this tool for the > Er-doped films? > > Cheers! > > ? Aaron > > > > On Wed, Sep 24, 2008 at 10:00 PM, Jim McVittie > > wrote: > > Aaron, > > Ok, since you do not care about how much Si you etch, the Lam is not > automatically off the table. But I still would not go with the Lam > since > really do not have a nitride etch process in the Lam. If I was you, I > would go with the P5000 since it is quick and uniform. The std oxide > etch > process process will work fine or you can use a nitride process. If > you > already know the AMT but not the P5000, then go with the AMT. THe > via etch > shouls work fine. I would timed etch since you have non-critical > needs. If > really want to use endpoint, I can probably it up for you, > > Jim > > On Wed, 24 Sep 2008, Aaron Hryciw wrote: > > > Hi Mary, Jim ? > > > > The purpose of this etch will be to define silicon-rich nitride > (SRN) > > microdisks, the pillars of which will afterwards be defined by a > TMAH etch. > > As such, my tolerance for etching into the underlying Si is not too > > critical, just so long as I punch through the SRN. To answer your > > questions: > > > > 1. What kind of film are you etching exactly? (Target > composition and > > > thickness.) > > > > > > > The final process wafers will be: 1) SRN, ~49% Si, 51% N, and 2) > SRN doped > > with up to 1% Er. In both cases, the film will be ~50 nm thick. > > > > 2. What feature size and what is your masking material (thickness > and type > > > of resist, whether there's a sacrificial mask.) > > > > > > > For the first experiments, the features will be widely-spaced > circles, > > ranging from ~1 to 100 um in diameter. The intended masking > material is > > Shipley 3612, patterned using the ASML (1 um thick? 1.6 um? > with/without UV > > cure? --> will test). If necessary, however, a sacrificial mask > (Cr?) could > > certainly be used. > > > > > > > 3. What are you stopping on and what is your tolerance for > etching into > > > this? > > > > > > > I will be stopping on Si. As mentioned above, so long as I > manage to punch > > through the SRN, the tolerance for etching into the underlying Si > substrate > > is quite large; for instance, I imagine I could etch a micron > into the Si > > without any problem. Presumably, since the etch rate of Si > should be much > > larger than SRN, it should be detectable as a spike in Si-related > byproducts > > in the endpoint detection plots, correct? > > > > 4. What are your uniformity (and selectivity) requirements? > > > > > > > I will have several dies on the wafer, each with the 1 to 100 um > diameter > > (roughly equally on a logarithmic scale) disks on them, and for the > > experiments, I will be looking at single disks, so uniformity > across the > > wafer will also not be too much of an issue. Even 10% or so > should be > > fine. Since there is only a single masking/etching step, the > only material > > being etched is the SRN, so selectivity isn't really a problem, > except > > insofar as I can tell when I've reached the Si. If endpoint > detection is > > not possible, and I have to go with a timed etch (after > characterising the > > process with test wafers), so be it! > > > > 5. I'm presuming that your substrates are 100 mm silicon rounds > of standard > > > thickness? > > > > > > > Correct. > > > > Thanks again to both of you for all your help. > > > > Cheers! > > > > ? Aaron > > > > > > On Wed, Sep 24, 2008 at 10:55 AM, Mary Tang > wrote: > > > > > Hi Aaron -- > > > > > > Jim is absolutely right -- my apologies, I think I confused > yours with > > > another project and didn't realize you were stopping on > silicon. I don't > > > know about this machine specifically, but silicon etches about > an order of > > > magnitude faster with SF6 than silicon nitride (stoichiometric). > > > > > > As I neglected to perform due diligence before by asking you a > bunch of > > > questions, I'm going to ask right now (and no doubt, Jim will > have more.) > > > > > > 1. What kind of film are you etching exactly? (Target > composition and > > > thickness.) > > > 2. What feature size and what is your masking material > (thickness and type > > > of resist, whether there's a sacrificial mask.) > > > 3. What are you stopping on and what is your tolerance for > etching into > > > this? > > > 4. What are your uniformity (and selectivity) requirements? > > > 5. I'm presuming that your substrates are 100 mm silicon rounds > of standard > > > thickness? > > > > > > Again, sorry about that -- > > > > > > Mary > > > > > > > > > Jim McVittie wrote: > > > > > >> Hi, > > >> > > >> I just sent you a copy of a note I sent Mary. We never got > great Nitride > > >> results in our Lam. The other tools gave better results so we > never push > > >> the Lam to get a good niride process. I would NOT use the Lam > to stop on > > >> Si. It is a Si etcher and not optimized to stop on Si. You > need to use an > > >> oxide etcher which has the polymer deposition which will slow > down the > > >> etch rate when you hit Si. SF6 is not a good chice since it > loves to etch > > >> etch Si. I can help you if you want to use the AMT or P5000. > > >> > > >> Jim > > >> > > >> > > >> On Wed, 24 Sep 2008, Aaron Hryciw wrote: > > >> > > >> > > >> > > >>> Hi Jim ? > > >>> > > >>> I need an anisotropic etch recipe for silicon-rich nitride > (SRN); > > >>> ultimately, I'll need to etch through a 350-nm-thick SRN > film, stopping > > >>> on > > >>> Si. Mary suggested using the lampoly tool with a SF6-based > chemistry, > > >>> and > > >>> said that you would likely be able to offer some advice as > how best to > > >>> proceed. She said that recipe 99 (a "clean" recipe with SF6 > and Cl with > > >>> no > > >>> bias, for general chamber cleaning) might be a good place to > start, and > > >>> she > > >>> also sent me a link to the standard nitride recipe (SF6 and > He) for > > >>> etching > > >>> on the Lam1 tool in Berkeley's Microlab (although this is > quite a > > >>> different > > >>> tool compared to SNF's). > > >>> > > >>> I'm going to ask Maurice for some dummy low-stress nitride > (which are > > >>> apparently quite Si-rich) to use as etch-test wafers, and I > was hoping > > >>> you > > >>> could give me a few lampoly "rules of thumb" (pressures, RF > power, bias, > > >>> etc.) for anisotropic SF6-based etching which I could use as > a starting > > >>> point. Many thanks! > > >>> > > >>> Cheers! > > >>> > > >>> ? Aaron > > >>> > > >>> > > >>> > > >>> > > >>> > > >> > > >> > > >> > > > > > > > > > -- > > > Mary X. Tang, Ph.D. > > > Stanford Nanofabrication Facility > > > CIS Room 136, Mail Code 4070 > > > Stanford, CA 94305 > > > (650)723-9980 > > > mtang at stanford.edu > > > http://snf.stanford.edu > > > > > > > > > > > > > > -- > -------------------------------------------------------------- > Jim McVittie, Ph.D. Senior Research Scientist > Allen Center for Integrated Systems Electrical Engineering > Stanford University jmcvittie at stanford.edu > > Rm. 336, 330 Serra Mall Fax: (650) 723-4659 > Stanford, CA 94305-4075 Tel: (650) 725-3640 > > > > >