From sishikaw at stanford.edu Thu Jul 2 11:36:49 2009 From: sishikaw at stanford.edu (sishikaw) Date: Thu, 2 Jul 2009 11:36:49 -0700 Subject: deposite a doped poly-Si on a oxide Message-ID: <004a01c9fb44$0f678440$d95540ab@CMC.mel.toshiba.co.jp> Dear Specmat, My name is Satoshi Ishikawa(ID:sishikaw). I am a visiting scholar at Prof. Nishi's group. I have a question. I want to deposit a doped poly-silicon by the thermcoploy on a Si-rich oxide which is made by STS PECVD. However, as you know, the contamination level of the thermcopoly is clean and STS is gold contamination. Would you have some methods(e.g a clean process of STS) to do that? I am looking forward hearing from you. Thank you in advance. Sincerely, Satoshi -------------- next part -------------- An HTML attachment was scrubbed... URL: From zpatel at ubimos.com Sun Jul 5 13:04:19 2009 From: zpatel at ubimos.com (zpatel at ubimos.com) Date: Sun, 05 Jul 2009 20:04:19 +0000 Subject: 4" N type <100> test wafer < 1 ohm-cm Message-ID: <20090705200419.ezas480v9cw8s0sg@ubimos.com> To Specmat Committe Members This a request to bring silicon wafer in the lab at SNF facility. All the requested information is provided below. Please let me know if any additional information is required. Thanking you, Zubin Patel Member of Technical Staff UbiMOS Technologies Inc, 3907 North 1st Street San Jose, CA, 95134 Phone: 408 434 1808 Ext 319 Email: zpatel at ubimos.com Contact information Name: Zubin patel Coral login: zpatel phone: 408 813 5778 email: zpatel at snf.standford.edu Company UbiMOS Technologies inc Material: 4? N <1-0-0> <1 OHM-CM, 475-575?m TEST WAFERS SINGLE SIDE POLISH TWO SEMI-Std FLATS Vendor: Montco Silicon technologies Inc http://www.silicon-wafers.com/ 2240 Ringwood Avenue San Jose, CA 95131 Phone: (408) 945 - 8112 Fax: (408) 945 - 0765 From sroonter at stanford.edu Fri Jul 10 17:45:21 2009 From: sroonter at stanford.edu (Saeroonter Oh) Date: Fri, 10 Jul 2009 17:45:21 -0700 (PDT) Subject: [SpecMat Approval Request] Succinic Acid In-Reply-To: <1139175225.10761691247273087688.JavaMail.root@zm03.stanford.edu> Message-ID: <503896740.10761821247273121980.JavaMail.root@zm03.stanford.edu> Dear SpecMat committee: I am submitting a new chemical request form. File Attachments: 1. Request document (same as this email) also in .doc 2. MSDS in .pdf 3. Process flow and etch chemistry in .ppt 1. Contact Information Name: Saeroonter Oh Coral: sroonter Phone: 650-353-1266 Email: sroonter at stanford.edu PI: Prof. H.-S. Philip Wong 2. The Chemical * MSDS from Vendor attached to this email (pdf file) Name: Succinic acid Synonyms: Amber acid, Butanedioic acid, Ethylenesuccinic acid CAS: 110-15-6 Storage: D - Compatible Organic Acids, Flammables, and Poisons Hazards: 6. Flammables, 19. Acid, 28. Skin Irritant 3. Vendor Info Fisher Stores Address: 337 Campus Drive, Lokey Bldg Rm#168, Stanford, CA 94305 Phone: 650-723-1278 Website: http://www.fishersci.com 4. Reason for request I will be using this in the CISX111 lab and the cleanroom. It is to selectively wet etch InGaAs from AlInAs. It has sufficient selectivity needed for etch. Recipe: Succinic acid:Hydrogen Peroxide = 5:1 with pH=5 (controlled by Ammonium Hydroxide) (Etch process in attached ppt file) We have contacted another group at MIT that uses this same recipe. 5. Process Flow It is III-V processing. Only gold-contaminated tools will be used. * Process flow attached to this email (ppt file). 6. Amount and form Amount: 500g Form: Crystalline form * The solution mixing will be done in the CISX 111 lab, not the cleanroom. The crystalline form Succinic Acid will not be taken into the cleanroom. 7. Storage Storage: D - Compatible Organic Acids, Flammables, and Poisons D is stored in the yellow solvent cabinet. 8. Disposal Dispose: Acid disposal (dispose in acid drain at wbgaas) Best regards, Saeroonter -------------- next part -------------- A non-text attachment was scrubbed... Name: Process_flow_SAsolution.ppt Type: application/vnd.ms-powerpoint Size: 197120 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: SuccinicAcid_SpecMat_request.doc Type: application/msword Size: 30720 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: MSDS_succinicacid.pdf Type: application/pdf Size: 368603 bytes Desc: not available URL: From mtang at stanford.edu Fri Jul 10 22:33:46 2009 From: mtang at stanford.edu (Mary Tang) Date: Fri, 10 Jul 2009 22:33:46 -0700 Subject: [SpecMat Approval Request] Succinic Acid In-Reply-To: <503896740.10761821247273121980.JavaMail.root@zm03.stanford.edu> References: <503896740.10761821247273121980.JavaMail.root@zm03.stanford.edu> Message-ID: <4A58243A.4070302@stanford.edu> Hi Saeroonter -- In my opinion, your SpecMat request is OK, with the following provisions: 1. I am not familiar with this etch, but the MSDS for succinic acid indicates that it should be kept away from strong oxidizers (hydrogen peroxide is a strong oxidizer) and strong bases (ammonium hydroxide is pretty strong.) It is also not very soluble in water. I take it that your are consulting with your MIT contacts about the details of the mixing process -- and that you'll be bringing in thoroughly premixed solution. 2. Do not store unused, mixed chemical at SNF. It's generally not a good idea to keep hydrogen peroxide mixtures around. Particularly if they are mixed with chemicals that are not considered very compatible. Please aspirate unused chemical. 3. Used etchant (and first rinses) should be locally collected in a chemically compatible waste container, tagged as hazardous waste, and places in the chemicals passthrough for pickup. Do not aspirate or put used etchant down the drain because it will contain the metals you've just etched. Mary Saeroonter Oh wrote: > Dear SpecMat committee: > > I am submitting a new chemical request form. > > File Attachments: > 1. Request document (same as this email) also in .doc > 2. MSDS in .pdf > 3. Process flow and etch chemistry in .ppt > > > 1. Contact Information > > Name: Saeroonter Oh > Coral: sroonter > Phone: 650-353-1266 > Email: sroonter at stanford.edu > PI: Prof. H.-S. Philip Wong > > > 2. The Chemical > > * MSDS from Vendor attached to this email (pdf file) > > Name: Succinic acid > Synonyms: Amber acid, Butanedioic acid, Ethylenesuccinic acid > CAS: 110-15-6 > > Storage: D - Compatible Organic Acids, Flammables, and Poisons > Hazards: 6. Flammables, 19. Acid, 28. Skin Irritant > > > 3. Vendor Info > > Fisher Stores > Address: 337 Campus Drive, Lokey Bldg Rm#168, Stanford, CA 94305 > Phone: 650-723-1278 > Website: http://www.fishersci.com > > > 4. Reason for request > > I will be using this in the CISX111 lab and the cleanroom. > It is to selectively wet etch InGaAs from AlInAs. > It has sufficient selectivity needed for etch. > > Recipe: Succinic acid:Hydrogen Peroxide = 5:1 with pH=5 (controlled by Ammonium Hydroxide) > (Etch process in attached ppt file) > We have contacted another group at MIT that uses this same recipe. > > > 5. Process Flow > > It is III-V processing. Only gold-contaminated tools will be used. > > * Process flow attached to this email (ppt file). > > > 6. Amount and form > > Amount: 500g > Form: Crystalline form > > * The solution mixing will be done in the CISX 111 lab, not the cleanroom. > The crystalline form Succinic Acid will not be taken into the cleanroom. > > > 7. Storage > > Storage: D - Compatible Organic Acids, Flammables, and Poisons > D is stored in the yellow solvent cabinet. > > > 8. Disposal > > Dispose: Acid disposal (dispose in acid drain at wbgaas) > > > > Best regards, > Saeroonter > From mferrier at stanford.edu Tue Jul 14 15:48:16 2009 From: mferrier at stanford.edu (Marlene Ferrier) Date: Tue, 14 Jul 2009 15:48:16 -0700 (PDT) Subject: DMSO Message-ID: <377839754.27475881247611696573.JavaMail.root@zm08.stanford.edu> Hi, To follow the instructions of the company doing the ebeam lithography on my wafers I am planning to use Heated Dimethyl Sulfoxide to do a liftoff. I would like to know where to drain it and if there is any special precaution I should take. I would really appreciate a feedback from someone familiar with this product as Ed has never used it. Thanks in advance, Marl?ne From mtang at stanford.edu Mon Jul 20 16:05:56 2009 From: mtang at stanford.edu (Mary Tang) Date: Mon, 20 Jul 2009 16:05:56 -0700 Subject: wbgen2 TMAH Bath Message-ID: <4A64F854.8080702@stanford.edu> Hi Raja, Gaurav -- Sorry for the delay. Your request to use the Lufran TMAH etch bath at wbgen2 for PRS-1000 resist clean of Ge substrates is hereby OK'ed. - The bath has previously been used, but for only for TMAH (no KOH) on non-gold-containing substrates, so gold and potassium should not be a concern. However, please decontaminate using 5:1:1 Water: 30% hydrogen peroxide: Conc. HCl before your use. The tank has a drain to AWN, so you should be OK. The bath heater is mounted below a perforated teflon plate. There's a lot of surface area, so you should rinse a bit better than you would normally on a regular quartz bath. - You should rinse the bath with a little PRS-1000 a few times before using. Any residual water in the bath will not be good for the PRS-1000. - As mentioned, the bath heater is below perforated teflon plate. The thermocouple tip is just about an inch or two above the plate. We want to make sure there's adequate thermal mixing, which will be more impeded (with the teflon plate) than in a regular quartz bath. This can be done with the N2 sparger (flow a little N2 which bubbles up through the plate) but I'm not sure what this may do to Ge. You can also make sure to mix by dunking the cassette at regular intervals to ensure mixing. Jim 's suggestion (which is a very good one) is to turn the sparger on while the system is heating (to ensure mixing) and turn it off when you dunk your cassette, making sure to lift the cassette in and our every couple of minutes to ensure good mixing. Turn the heater off when you're done. I've got Jim's manuals at my desk, if you are interested in looking at the controller operating procedures -- but it seems pretty straightforward. If there is trouble with the temperature stabilizing, there are PID settings which you should use. Let me know how things go -- Thanks, Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From rtomita at stanford.edu Wed Jul 22 18:12:09 2009 From: rtomita at stanford.edu (Ryuji Tomita) Date: Wed, 22 Jul 2009 18:12:09 -0700 (PDT) Subject: wetbench after Al implantation In-Reply-To: <1863979750.1513481248311296270.JavaMail.root@zm07.stanford.edu> Message-ID: <103288868.1513791248311529933.JavaMail.root@zm07.stanford.edu> Hi SpecMat member, I am Ryuji Tomita, visiting scholar at Nishi group. (Coral login:rtomita, TEL:650-319-5380) I would like to use Al implantation on silicon wafer before Nickel silicidation. Please check my Process flow in the attached file. After Al Implantation, I would like to SPM(Piranha) for cleaning wafer and HF50:1 or BOE20:1 for removing chemical oxide. May I use wbnometal for this wet process(Plan A)? At least Can I use wbsilicide for this wet process(Plan B)? Because Al is considered as standard semi-clean material. or Should I use wbgen for this process ? Please give me advice. Best Regards, Ryuji Tomita -------------- next part -------------- A non-text attachment was scrubbed... Name: Silicide Process Flow.xls Type: application/octet-stream Size: 25088 bytes Desc: not available URL: