From usharaghuram at gmail.com Sun Aug 1 22:18:50 2010 From: usharaghuram at gmail.com (Usha Raghuram) Date: Sun, 1 Aug 2010 22:18:50 -0700 Subject: Fwd: HD-3007 polyimide and thinnerT9039 In-Reply-To: <4C533ACC.2010604@stanford.edu> References:

<4C533ACC.2010604@stanford.edu> Message-ID: Mahnaz, Attached are the copies of the certificate of analysis and MSDS for both HD-3007 and T-9039. Regards, Usha On Fri, Jul 30, 2010 at 1:49 PM, Mahnaz Mansourpour wrote: > > Hi Usha , > > This is to let you know that you are confirmed on the use of these > chemicals. > Usha has given me the hard copy of the MSDS which for now I am putting it > in the chemical log binder in my office. > > I have asked the mixture get mixed in a small bottle so we can get rid of > it easily. > I have asked and Usha understand the cleaning of back of the wafers is a > must for ASML so after the blue dicing removed still should be cleaned ( > q-tips) quickly before going to hot plate. > mahnaz > > Usha Raghuram wrote: > >> Hi Mahnaz, >> >> Below is my plan as to how this polyimide will be processed and subsequent >> processing steps. >> >> 1. Thin poly imide with thinner and coat in Headway - Need 3 labels, one >> for thinned material, one for thinner (T-9039)and one for polyimide >> (HD-3007). 2. Bake and cure - Blue-M and hot plate >> 3. Resist spin, Expose (ASML) and develop - Will use blue tape before >> coating with polyimide to keep the backside clean. >> 4. Etch & clean - Drytek 4 - solvent clean (wbmiscres) >> 5. Coat with resist and expose - ASML >> 6. Innotec metal dep & lift off. >> 7. Attach top wafer - Blue M oven / hot plate bake >> 8. Handle wafer removal - back grind / etch - contaminated tool set or >> outside processing. >> 9. Polyimide coat, cure, resist coat, pattern (contact printing) & etch >> 10. Wafer saw. >> >> Regards, >> >> Usha >> >> Note: HD-3007 is commonly used in wafer bonding proces. Attached is is a >> reference for that. >> >> ---------- Forwarded message ---------- >> From: *Usha Raghuram* > usharaghuram at gmail.com>> >> Date: Wed, Jul 28, 2010 at 1:54 PM >> Subject: HD-3007 polyimide and thinnerT9039 >> To: specmat at snf.stanford.edu >> >> >> Hello, >> >> I have ordered HD-3007 and the thinner T-9039 for my experiments and would >> like to get approval for using them. Attached are the process guide for >> these materials. >> Regards, >> >> Usha >> >> -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: HD3007_MSDS.PDF Type: application/pdf Size: 715728 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: T9039_MSDS.PDF Type: application/pdf Size: 909629 bytes Desc: not available URL: From mtang at stanford.edu Wed Aug 4 12:22:06 2010 From: mtang at stanford.edu (Mary Tang) Date: Wed, 04 Aug 2010 12:22:06 -0700 Subject: [Fwd: FW: Cytop 809M] Message-ID: <4C59BDDE.7050603@stanford.edu> Hi all -- A requested forwarded from Shifeng Li. I'll forward some process details shortly. M -------- Original Message -------- Subject: FW: Cytop 809M Date: Wed, 4 Aug 2010 11:28:37 -0700 From: Li, Shifeng To: mtang at stanford.edu Hi, Mary, this is what I sent this Monday. Due to tight project schedule, please check them and see if I can use them in SNF. Also, please forward them to Specmat Thanks! Shifeng *From:* Li, Shifeng *Sent:* Monday, August 02, 2010 5:54 PM *To:* 'specmat at snf.stanford.edu' *Cc:* Hennessy, Kevin *Subject:* Cytop 809M Hi, Committee, I need use Cytop 809M inside SNF. I attached the technique documents for your reference. We only find these documents from company instead of the official MSDS. I think you can find every MSDS from the attached documents as well. I may want to use this material in Wends day if can. if you have any questions, please let me know. Thanks! Shifeng -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- A non-text attachment was scrubbed... Name: CTL800M.pdf Type: application/pdf Size: 218684 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: CYTOP TECHNICAL - BROCHURE 2009.pdf Type: application/pdf Size: 1153032 bytes Desc: not available URL: From mtang at stanford.edu Wed Aug 4 12:26:07 2010 From: mtang at stanford.edu (Mary Tang) Date: Wed, 04 Aug 2010 12:26:07 -0700 Subject: [Fwd: processes on Cytop] Message-ID: <4C59BECF.5090900@stanford.edu> Hi all -- More processing details. The Cytop is a fluorinated polymer with good coating/adhesion properties (interesting, isn't it?) The dispersing solvent is also a fluorinated polymer. Shifeng proposes to spin coat this on the headway2. Any concerns? Mary -------- Original Message -------- Subject: processes on Cytop Date: Wed, 4 Aug 2010 11:56:54 -0700 From: Li, Shifeng To: 'mtang at stanford.edu' <'mtang at stanford.edu'> CC: James W. Conway , Hennessy, Kevin Hi, Mary, This is what I am going to do with Cytop 1. Spin coat Cytop on the substrates and bake on the hotplates 2. Surface actuation in DryteK1 or Drytek2 3. Spin coating e-beam resist and pattern it 4. metalization and lift off 5. O2 plasma dry etching in Drytek1 or DryteK2 I consider this process is a gold contanmiated process if you have any questions, please let me know. Best Shifeng -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From jasonlin at stanford.edu Thu Aug 5 15:49:43 2010 From: jasonlin at stanford.edu (J. Jason Lin) Date: Thu, 5 Aug 2010 15:49:43 -0700 Subject: Hydrobromic Acid at Wetbench General Message-ID: Hi SpecMat Committee, I would like to use hydrobromic acid 48% (MSDS sheet is attached) at the wbgeneral wetbench. My plan is to dip my wafers in HBr acid for a few minutes at room temperature, then transfer them to the savannah ald. I would be using my own labware. Also, my wafers/pieces will only have Si, Ge, and SiO2 (no metals to react with the acid). Please let me know if you require more information to make a decision on my specmat request. Thanks, Jason CORAL ID: jasonlin -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Hydrobromic Acid MSDS.pdf Type: application/pdf Size: 152936 bytes Desc: not available URL: From mtang at stanford.edu Thu Aug 5 16:03:56 2010 From: mtang at stanford.edu (Mary Tang) Date: Thu, 05 Aug 2010 16:03:56 -0700 Subject: Hydrobromic Acid at Wetbench General In-Reply-To: <31624_1281048589_4C5B4009_31624_448_1_AANLkTinHgV3=L4+DRK5DHvS1rwL4FUNtyF_WoTQghS0V@mail.gmail.com> References: <31624_1281048589_4C5B4009_31624_448_1_AANLkTinHgV3=L4+DRK5DHvS1rwL4FUNtyF_WoTQghS0V@mail.gmail.com> Message-ID: <4C5B435C.8040406@stanford.edu> Hi Jason -- More detail on your procedure would be appreciated. HBr protocols are reviewed very carefully. 1. How much HBr do you plan to bring in and store? 2. Is this one time or will you be doing this often? 3. Do you have a detailed procedure from a reference that you are using? Are there other chemicals involved? 4. Please be aware incompatibilities of HBr. This includes metals (so, no metal tweezers) and strong oxidizers (which are allowed at wbgeneral.). You would need to use special procedures for ensuring that no others use the bench while you are doing this work. Please send us this information. Thanks, Mary J. Jason Lin wrote: > Hi SpecMat Committee, > > I would like to use hydrobromic acid 48% (MSDS sheet is attached) at > the wbgeneral wetbench. > > My plan is to dip my wafers in HBr acid for a few minutes at room > temperature, then transfer them to the savannah ald. I would be using > my own labware. Also, my wafers/pieces will only have Si, Ge, and > SiO2 (no metals to react with the acid). > > Please let me know if you require more information to make a decision > on my specmat request. > > Thanks, > Jason > CORAL ID: jasonlin > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From artyjamo at gmail.com Thu Aug 5 16:24:50 2010 From: artyjamo at gmail.com (Aleta Jamora) Date: Thu, 5 Aug 2010 16:24:50 -0700 Subject: Fwd: POCL project - Translucent Inc w/ files In-Reply-To: References: Message-ID: Hi Guys, We really need some feedback from you regarding this project for Translucent . We would like to process Si wafers with Gd oxide and a Silicon cap in Tylan 6, the POCL furnace. Are we allowed to do this? do you need more data etc..... Much thanks, -Aleta Jamora Sr. Process Engineer Translucent Inc cell 510 378 1602 ---------- Forwarded message ---------- From: Aleta Jamora Date: Tue, Jul 27, 2010 at 2:19 PM Subject: Fwd: POCL project - Translucent Inc w/ files To: specmat stanford Sorry, forgot attachments first time -A ---------- Forwarded message ---------- From: Aleta Jamora Date: Tue, Jul 27, 2010 at 2:12 PM Subject: POCL project - Translucent Inc To: specmat stanford Hello spec mat, My boss Andrew Clark, ( VP of Translucent Inc ) has a project that needs to be completed by the end of August that wuold require processing Silicon wafers with Gd oxide (Gadolinium Oxide) and possibly SiGe layers in Tylan 6, the POCL diffusion furnace. I'm including a brief Power Point file from Andrew and also an MSDS sheet for Gadolinium Oxide. The process flow would involve fabricating wafers by growing a 500 - 1000Ang full film of Gadolinium Oxide on a bare/new 4 inch Silicon wafer and then growing a 2um capping layer of Silicon or Silicon Germaium on top of the Gadolinium oxide. The fabrication of these wafers would take place at Translucent's facility in Palo Alto. We would like to then put the wafers in tylan 6, the POCL furnace and use the POCL800A recipe for a 15 to 30 min process. We want to process 5 wafers in a single run. Prior to putting the wafers in the POCL furnace, we would need to do a diffusion clean. We should discuss what (and where) diffusion clean would be needed and appropriate prior to the putting wafers in Tylan 6. If it is not appropriate to use SNF's WBDiff, we have a diffusion cleaning bench here at Translucent. I would be willing to do the processing of these wafers at a time when there is not a lot of activity in the lab, so that I could do a decontamination on the diffusion clean bench after cleaning the wafers. The diffusion clean process we are plannining would be SNF's standard diffusion clean - Sulfuric Acid/Hydrogen peroxide & dump rinse followed by an HCl/Hydrogen Peroxide & dump rinse followed by a 50:1 HF dip & dump rinse + Spin Rinse Dry. We have photomask orders pending your decision. Please respond to us ASAP or by the end of this week, July 30th with questions, concerns or requests for more information. We would like to immediately start discussing how this POCL doping run might be accomplished at SNF. Much Thanks, Aleta Jamora Sr Process Engineer Translucent Inc 952 Commercial Street Palo Alto, CA 94303 cell 510 378 1602 -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: POCl processing SiGe ? oxide ? Si wafers.ppt Type: application/vnd.ms-powerpoint Size: 24064 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: MSDS_gadoliniumoxide.pdf Type: application/pdf Size: 46095 bytes Desc: not available URL: From mtang at stanford.edu Fri Aug 6 13:19:55 2010 From: mtang at stanford.edu (Mary Tang) Date: Fri, 06 Aug 2010 13:19:55 -0700 Subject: [Fwd: Re: Hydrobromic Acid at Wetbench General] Message-ID: <4C5C6E6B.3070707@stanford.edu> Hi all -- I guess the halogen passivation process is being investigated again. This is what Jungyup did, I believe. I don't like this process, but also can see it would be OK to run with appropriate warnings and precautions. The first is reinforcing use of protective gear. Second, is ensuring that no oxidizers are used at this bench while work is being done -- maybe best to ensure that the whole bench is reserved and blocked off (Uli has procedures for approved processes) and never left unattended. The other concern is how to blow 48% HBr off a wafer without contaminating on nearby surfaces. I would suggest reviewing this step-by-step with Jason. And making it clear that anyone else who does this needs to specially trained as well. What does everyone else think? Uli? Mary -------- Original Message -------- Subject: Re: Hydrobromic Acid at Wetbench General Date: Thu, 5 Aug 2010 16:51:15 -0700 From: J. Jason Lin To: Mary Tang References: <31624_1281048589_4C5B4009_31624_448_1_AANLkTinHgV3=L4+DRK5DHvS1rwL4FUNtyF_WoTQghS0V at mail.gmail.com> <4C5B435C.8040406 at stanford.edu> Hi Mary, It seems JT Baker sells HBr acid in 500mL container, so maximum I would bring in would be 500mL. Since I don't need that much per run (mostly processing pieces) I am trying to find a place to buy smaller quantities. I'll be trying the process with HBr once to see if it works, but if it can give me good results, then it may become a more regular occurrence. The process I plan to use is to do the standard Ge clean at the germanium wetbench. Then move to wbgen and dip my pieces into HBr for 10 minutes and blow dry with N2 gun. I would then immediately transfer them to the ALD chamber. No other chemicals will be at wbgen and HBr will be at room temperature. I've attached the paper where this was done. Also, the process is the same as used by Jungyup Kim here a few years ago when he was exploring how to clean Ge. In his case, he used HF, HCl, HBr, and HI to passivate the Ge surface by dipping Ge pieces into one of those acids for 2 minutes. With regards to the incompatibilities of HBr, I will be using dedicated teflon tweezers and labware. The pieces themselves will only have Si, Ge, and SiO2, so no metals there either. What kind of special procedures should I adopt while working at wbgeneral? If there are established procedures then I can follow those; otherwise, I can reserve both wbgen-hpr and wbgen-ctb and put up a sign informing other users not to use the wbgeneral while I am using HBr. Thanks, Jason On Thu, Aug 5, 2010 at 4:03 PM, Mary Tang > wrote: Hi Jason -- More detail on your procedure would be appreciated. HBr protocols are reviewed very carefully. 1. How much HBr do you plan to bring in and store? 2. Is this one time or will you be doing this often? 3. Do you have a detailed procedure from a reference that you are using? Are there other chemicals involved? 4. Please be aware incompatibilities of HBr. This includes metals (so, no metal tweezers) and strong oxidizers (which are allowed at wbgeneral.). You would need to use special procedures for ensuring that no others use the bench while you are doing this work. Please send us this information. Thanks, Mary J. Jason Lin wrote: Hi SpecMat Committee, I would like to use hydrobromic acid 48% (MSDS sheet is attached) at the wbgeneral wetbench. My plan is to dip my wafers in HBr acid for a few minutes at room temperature, then transfer them to the savannah ald. I would be using my own labware. Also, my wafers/pieces will only have Si, Ge, and SiO2 (no metals to react with the acid). Please let me know if you require more information to make a decision on my specmat request. Thanks, Jason CORAL ID: jasonlin -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: ApplPhysLett_92_252902.pdf Type: application/pdf Size: 339907 bytes Desc: not available URL: From mahnaz at stanford.edu Fri Aug 6 15:56:11 2010 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Fri, 06 Aug 2010 15:56:11 -0700 Subject: [POSSIBLE VIRUS:###] [Fwd: Re: final list of metal alkoxides ordered + all MSDS...] Message-ID: <5538_1281135372_4C5C930C_5538_25194_1_4C5C930B.8090708@stanford.edu> Hi all, So apparently things went wrong, the solution that should not gone DRY went DRY and left a mess on the bench. users complained and Uli cut in the mist of it all...and you know how the story goes... I talked to Robert and told him that I am withdrawing our permission to use the chemical and we will talk about the procedure next week. He should be cleaning up the bench as i write the email. he had mixed the solution 10:1 and first try with first solution went okay at 50c i think. Robert just came out to talk to me, he has taken all the beakers and is in his locker, i really like for the sake of specmat to capture the ratios and how the experiment went. So Robert i do appreciate if we can capture the details. mahnaz mahnaz -------------- next part -------------- An embedded message was scrubbed... From: Mary Tang Subject: Re: final list of metal alkoxides ordered + all MSDS... Date: Mon, 26 Apr 2010 08:18:27 -0700 Size: 25059 URL: From roberth at quswami.com Fri Aug 6 17:26:54 2010 From: roberth at quswami.com (Robert Huang) Date: Fri, 6 Aug 2010 17:26:54 -0700 Subject: [Fwd: Re: final list of metal alkoxides ordered + all MSDS...] Message-ID: <3F24868DDBDC7B46B2289E33B58C4CB11FA03933FC@QUSWAMI-DSRV1.quswami.local> Mahnaz, Uli, All, Yes, things definitely didn't go well, at least for 3 of the 4 materials that I was working with. I'm attaching the details of the 4 different solutions, the concentrations of each, what temperatures I used, and the order that I tried them out. The summary is that the first solution, the SiO2 solution, behaved fine on many wafers both at 30C and at 50C. However, for the other 3 solutions, Aluminum oxide, Hf oxide, and Zr oxide, they all formed solids (the metal oxides themselves) after exposure to ambient after a few minutes. I tried heating the Zr oxide solution as well as checked on a bare silicon wafer but neither of those helped. So, as Mahnaz has pointed out, the experiment didn't go as expected (or as had been published in the original Palomares reference that I had submitted to the specmat committee when I made this request). In retrospect, I understand the concern from the other users. They didn't know what materials I was working with and what the solids were. I think you all know that I consider safety to be the top priority, and in this case I got caught up in trying to figure out what was going wrong with my solutions. I'll be trying to figure out exactly why this happened. Certainly, in the meantime I concur with not running any more experiments with these materials in this manner. If there are any further questions, let me know. Robert ________________________________________ From: Mahnaz Mansourpour [mahnaz at stanford.edu] Sent: Friday, August 06, 2010 3:56 PM To: Uli Thumser; specmat at snf.stanford.edu; Robert Huang Subject: [Fwd: Re: final list of metal alkoxides ordered + all MSDS...] Hi all, So apparently things went wrong, the solution that should not gone DRY went DRY and left a mess on the bench. users complained and Uli cut in the mist of it all...and you know how the story goes... I talked to Robert and told him that I am withdrawing our permission to use the chemical and we will talk about the procedure next week. He should be cleaning up the bench as i write the email. he had mixed the solution 10:1 and first try with first solution went okay at 50c i think. Robert just came out to talk to me, he has taken all the beakers and is in his locker, i really like for the sake of specmat to capture the ratios and how the experiment went. So Robert i do appreciate if we can capture the details. mahnaz mahnaz -------------- next part -------------- A non-text attachment was scrubbed... Name: 100806_liq_precursor_results.pdf Type: application/pdf Size: 143761 bytes Desc: 100806_liq_precursor_results.pdf URL: From mtang at stanford.edu Wed Aug 11 09:05:16 2010 From: mtang at stanford.edu (Mary Tang) Date: Wed, 11 Aug 2010 09:05:16 -0700 Subject: [Fwd: processes on Cytop] In-Reply-To: <14384_1280949967_4C59BECF_14384_6369_1_4C59BECF.5090900@stanford.edu> References: <14384_1280949967_4C59BECF_14384_6369_1_4C59BECF.5090900@stanford.edu> Message-ID: <4C62CA3C.8040907@stanford.edu> Hi again -- OK, OK, I'VE got concerns. The fluorinated polymer solvent strikes me as being a very good way to cause adhesion problems if it should get out of control. This is why we do not allow non-mixed PDMS onto the headway (the base is a silicon oil.) So, I propose that Shifeng does this bit of his process in the wafersaw room, on the Laurell coater that we acquired specifically for this purpose. I understand that it still needs power and a pump installed and that there is a damaged solenoid, but we've got a replacement. We've also got a programmable hotplate in that area, so he can set his polymer before bringing his wafers back into the lab for additional processing. Shifeng says that for his experiments, this should be fine. Is everyone else OK with this? If we have an estimated time for the laurell, I'd like to get back to him. Thanks all -- Mary Mary Tang wrote: > Hi all -- > > More processing details. The Cytop is a fluorinated polymer with good > coating/adhesion properties (interesting, isn't it?) The dispersing > solvent is also a fluorinated polymer. Shifeng proposes to spin coat > this on the headway2. Any concerns? > > Mary > > > > > -------- Original Message -------- > Subject: processes on Cytop > Date: Wed, 4 Aug 2010 11:56:54 -0700 > From: Li, Shifeng > To: 'mtang at stanford.edu' <'mtang at stanford.edu'> > CC: James W. Conway , Hennessy, Kevin > > > > > Hi, Mary, > > This is what I am going to do with Cytop > > > > 1. Spin coat Cytop on the substrates and bake on the hotplates > > > > 2. Surface actuation in DryteK1 or Drytek2 > > > > 3. Spin coating e-beam resist and pattern it > > > > 4. metalization and lift off > > > > 5. O2 plasma dry etching in Drytek1 or DryteK2 > > > > I consider this process is a gold contanmiated process > > > > if you have any questions, please let me know. > > > > Best > > Shifeng > > > -- > Mary X. Tang, Ph.D. > Stanford Nanofabrication Facility > CIS Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From mahnaz at stanford.edu Wed Aug 11 10:45:55 2010 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Wed, 11 Aug 2010 10:45:55 -0700 Subject: [Fwd: processes on Cytop] In-Reply-To: <31626_1281542715_4C62CA3B_31626_8132_1_4C62CA3C.8040907@stanford.edu> References: <14384_1280949967_4C59BECF_14384_6369_1_4C59BECF.5090900@stanford.edu> <31626_1281542715_4C62CA3B_31626_8132_1_4C62CA3C.8040907@stanford.edu> Message-ID: <4C62E1D3.7040105@stanford.edu> Hi all, Mario is out today but Jim has been on top of this and working on the system. mahnaz Mary Tang wrote: > Hi again -- > > OK, OK, I'VE got concerns. The fluorinated polymer solvent strikes me > as being a very good way to cause adhesion problems if it should get > out of control. This is why we do not allow non-mixed PDMS onto the > headway (the base is a silicon oil.) > > So, I propose that Shifeng does this bit of his process in the > wafersaw room, on the Laurell coater that we acquired specifically for > this purpose. I understand that it still needs power and a pump > installed and that there is a damaged solenoid, but we've got a > replacement. We've also got a programmable hotplate in that area, so > he can set his polymer before bringing his wafers back into the lab > for additional processing. Shifeng says that for his experiments, > this should be fine. > > Is everyone else OK with this? If we have an estimated time for the > laurell, I'd like to get back to him. > > Thanks all -- > > Mary > > Mary Tang wrote: >> Hi all -- >> >> More processing details. The Cytop is a fluorinated polymer with >> good coating/adhesion properties (interesting, isn't it?) The >> dispersing solvent is also a fluorinated polymer. Shifeng proposes >> to spin coat this on the headway2. Any concerns? >> >> Mary >> >> >> >> >> -------- Original Message -------- >> Subject: processes on Cytop >> Date: Wed, 4 Aug 2010 11:56:54 -0700 >> From: Li, Shifeng >> To: 'mtang at stanford.edu' <'mtang at stanford.edu'> >> CC: James W. Conway , Hennessy, Kevin >> >> >> >> >> Hi, Mary, >> >> This is what I am going to do with Cytop >> >> >> >> 1. Spin coat Cytop on the substrates and bake on the hotplates >> >> >> >> 2. Surface actuation in DryteK1 or Drytek2 >> >> >> >> 3. Spin coating e-beam resist and pattern it >> >> >> >> 4. metalization and lift off >> >> >> >> 5. O2 plasma dry etching in Drytek1 or DryteK2 >> >> >> >> I consider this process is a gold contanmiated process >> >> >> >> if you have any questions, please let me know. >> >> >> >> Best >> >> Shifeng >> >> >> -- >> Mary X. Tang, Ph.D. >> Stanford Nanofabrication Facility >> CIS Room 136, Mail Code 4070 >> Stanford, CA 94305 >> (650)723-9980 >> mtang at stanford.edu >> http://snf.stanford.edu >> > > > -- > Mary X. Tang, Ph.D. > Stanford Nanofabrication Facility > CIS Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu > From edmyers at stanford.edu Wed Aug 11 13:55:00 2010 From: edmyers at stanford.edu (Ed Myers) Date: Wed, 11 Aug 2010 13:55:00 -0700 Subject: [Fwd: processes on Cytop] In-Reply-To: <23652_1281542715_4C62CA3B_23652_7766_1_4C62CA3C.8040907@st anford.edu> References: <14384_1280949967_4C59BECF_14384_6369_1_4C59BECF.5090900@stanford.edu> <23652_1281542715_4C62CA3B_23652_7766_1_4C62CA3C.8040907@stanford.edu> Message-ID: <6.2.5.6.2.20100811135443.051abd08@stanford.edu> I'm OK with the wafer saw room. At 09:05 AM 8/11/2010, Mary Tang wrote: >Hi again -- > >OK, OK, I'VE got concerns. The fluorinated polymer solvent strikes >me as being a very good way to cause adhesion problems if it should >get out of control. This is why we do not allow non-mixed PDMS onto >the headway (the base is a silicon oil.) > >So, I propose that Shifeng does this bit of his process in the >wafersaw room, on the Laurell coater that we acquired specifically >for this purpose. I understand that it still needs power and a pump >installed and that there is a damaged solenoid, but we've got a >replacement. We've also got a programmable hotplate in that area, >so he can set his polymer before bringing his wafers back into the >lab for additional processing. Shifeng says that for his >experiments, this should be fine. > >Is everyone else OK with this? If we have an estimated time for the >laurell, I'd like to get back to him. > >Thanks all -- > >Mary > >Mary Tang wrote: >>Hi all -- >> >>More processing details. The Cytop is a fluorinated polymer with >>good coating/adhesion properties (interesting, isn't it?) The >>dispersing solvent is also a fluorinated polymer. Shifeng proposes >>to spin coat this on the headway2. Any concerns? >> >>Mary >> >> >> >> >>-------- Original Message -------- >>Subject: processes on Cytop >>Date: Wed, 4 Aug 2010 11:56:54 -0700 >>From: Li, Shifeng >>To: 'mtang at stanford.edu' >><'mtang at stanford.edu'> >>CC: James W. Conway >>, Hennessy, >>Kevin >> >> >>Hi, Mary, >>This is what I am going to do with Cytop >> >>1. Spin coat Cytop on the substrates and bake on the hotplates >> >>2. Surface actuation in DryteK1 or Drytek2 >> >>3. Spin coating e-beam resist and pattern it >> >>4. metalization and lift off >> >>5. O2 plasma dry etching in Drytek1 or DryteK2 >> >>I consider this process is a gold contanmiated process >> >>if you have any questions, please let me know. >> >>Best >>Shifeng >> >> >>-- >>Mary X. Tang, Ph.D. >>Stanford Nanofabrication Facility >>CIS Room 136, Mail Code 4070 >>Stanford, CA 94305 >>(650)723-9980 >>mtang at stanford.edu >>http://snf.stanford.edu >> > > > >-- >Mary X. Tang, Ph.D. >Stanford Nanofabrication Facility >CIS Room 136, Mail Code 4070 >Stanford, CA 94305 >(650)723-9980 >mtang at stanford.edu >http://snf.stanford.edu