[Fwd: Re: Hydrobromic Acid at Wetbench General]
Mary Tang
mtang at stanford.edu
Fri Aug 6 13:19:55 PDT 2010
Hi all --
I guess the halogen passivation process is being investigated again.
This is what Jungyup did, I believe.
I don't like this process, but also can see it would be OK to run with
appropriate warnings and precautions. The first is reinforcing use of
protective gear. Second, is ensuring that no oxidizers are used at this
bench while work is being done -- maybe best to ensure that the whole
bench is reserved and blocked off (Uli has procedures for approved
processes) and never left unattended. The other concern is how to blow
48% HBr off a wafer without contaminating on nearby surfaces.
I would suggest reviewing this step-by-step with Jason. And making it
clear that anyone else who does this needs to specially trained as well.
What does everyone else think? Uli?
Mary
-------- Original Message --------
Subject: Re: Hydrobromic Acid at Wetbench General
Date: Thu, 5 Aug 2010 16:51:15 -0700
From: J. Jason Lin <jasonlin at stanford.edu>
To: Mary Tang <mtang at stanford.edu>
References:
<31624_1281048589_4C5B4009_31624_448_1_AANLkTinHgV3=L4+DRK5DHvS1rwL4FUNtyF_WoTQghS0V at mail.gmail.com>
<4C5B435C.8040406 at stanford.edu>
Hi Mary,
It seems JT Baker sells HBr acid in 500mL container, so maximum I would
bring in would be 500mL. Since I don't need that much per run (mostly
processing pieces) I am trying to find a place to buy smaller quantities.
I'll be trying the process with HBr once to see if it works, but if it
can give me good results, then it may become a more regular occurrence.
The process I plan to use is to do the standard Ge clean at the
germanium wetbench. Then move to wbgen and dip my pieces into HBr for
10 minutes and blow dry with N2 gun. I would then immediately transfer
them to the ALD chamber. No other chemicals will be at wbgen and HBr
will be at room temperature. I've attached the paper where this was
done. Also, the process is the same as used by Jungyup Kim here a few
years ago when he was exploring how to clean Ge. In his case, he used
HF, HCl, HBr, and HI to passivate the Ge surface by dipping Ge pieces
into one of those acids for 2 minutes.
With regards to the incompatibilities of HBr, I will be using dedicated
teflon tweezers and labware. The pieces themselves will only have Si,
Ge, and SiO2, so no metals there either. What kind of special
procedures should I adopt while working at wbgeneral? If there are
established procedures then I can follow those; otherwise, I can reserve
both wbgen-hpr and wbgen-ctb and put up a sign informing other users not
to use the wbgeneral while I am using HBr.
Thanks,
Jason
On Thu, Aug 5, 2010 at 4:03 PM, Mary Tang <mtang at stanford.edu
<mailto:mtang at stanford.edu>> wrote:
Hi Jason --
More detail on your procedure would be appreciated. HBr protocols
are reviewed very carefully.
1. How much HBr do you plan to bring in and store?
2. Is this one time or will you be doing this often?
3. Do you have a detailed procedure from a reference that you are
using? Are there other chemicals involved?
4. Please be aware incompatibilities of HBr. This includes metals
(so, no metal tweezers) and strong oxidizers (which are allowed at
wbgeneral.). You would need to use special procedures for ensuring
that no others use the bench while you are doing this work.
Please send us this information.
Thanks,
Mary
J. Jason Lin wrote:
Hi SpecMat Committee,
I would like to use hydrobromic acid 48% (MSDS sheet is
attached) at the wbgeneral wetbench.
My plan is to dip my wafers in HBr acid for a few minutes at
room temperature, then transfer them to the savannah ald. I
would be using my own labware. Also, my wafers/pieces will only
have Si, Ge, and SiO2 (no metals to react with the acid).
Please let me know if you require more information to make a
decision on my specmat request.
Thanks,
Jason
CORAL ID: jasonlin
--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang at stanford.edu <mailto:mtang at stanford.edu>
http://snf.stanford.edu
--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu
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