From bapinaud at stanford.edu Thu Dec 2 10:31:37 2010 From: bapinaud at stanford.edu (Blaise Anne Pinaud) Date: Thu, 2 Dec 2010 10:31:37 -0800 (PST) Subject: New Process Approval In-Reply-To: <150780687.278629.1291314632210.JavaMail.root@zm06.stanford.edu> Message-ID: <1863978758.278677.1291314697368.JavaMail.root@zm06.stanford.edu> Hello, I recently completed the safety training at SNF and I would like to know if my non-standard process can be cleanroom approved. I would like to chemically polish/etch tantalum metal foils in a ternary mixture of nitric acid, sulfuric acid and hydrofluoric acid. From going through the MSDSs available on the SNF website, it appears that all three of these acids have been used before in the cleanroom. The substrates will be mechanically polished prior to beginning work in SNF and will be 1 cm by 1 cm in size. The mixture would be a 5:2:2 ratio of sulfuric:nitric:HF in concentrated form. This mixture would be prepared on a relatively small scale (mixing 100 mL or less at a time, etching in approximately 10 mL at a time). I believe Teflon beakers are the most appropriate for use with these chemicals. The process would be carried out at room temperature and the polish/etch times will be on the order of minutes. Based on the equipment listings on the SNF website, the 'wet bench general' wbgen seems most appropriate for this work. I have attached a publication in which this cleaning procedure for tantalum foils is mentioned. Please let me know if there are any questions or additional information/forms I must provide. Thank you, Blaise -------------------------------- Blaise A. Pinaud PhD Candidate Jaramillo Group Chemical Engineering Stanford University bapinaud at stanford.edu -------------- next part -------------- A non-text attachment was scrubbed... Name: 1982-Palacio&Martinezo-Duart-The oxidation of polycrystalline tantalum at low pressures and low temperatures.pdf Type: application/pdf Size: 303681 bytes Desc: not available URL: From roberth at quswami.com Fri Dec 10 15:02:04 2010 From: roberth at quswami.com (Robert Huang) Date: Fri, 10 Dec 2010 15:02:04 -0800 Subject: processing of SiC in SNF... Message-ID: <3F24868DDBDC7B46B2289E33B58C4CB11FAEB92E5F@QUSWAMI-DSRV1.quswami.local> Dear Specmat committee: Is SiC an approved material for processing on any SNF equipment? If so, I'd appreciate any details in terms of what contamination category it is, which tools it is approved for, and any other protocol that I should follow. Regards, Robert Huang -------------- next part -------------- An HTML attachment was scrubbed... URL: From edmyers at stanford.edu Fri Dec 10 15:41:54 2010 From: edmyers at stanford.edu (Ed Myers) Date: Fri, 10 Dec 2010 15:41:54 -0800 Subject: processing of SiC in SNF... In-Reply-To: <3F24868DDBDC7B46B2289E33B58C4CB11FAEB92E5F@QUSWAMI-DSRV1.q uswami.local> References: <3F24868DDBDC7B46B2289E33B58C4CB11FAEB92E5F@QUSWAMI-DSRV1.quswami.local> Message-ID: <6.2.5.6.2.20101210154039.05140000@stanford.edu> Robert, We have experience of running SiC from Berkeley. We would need to talk about what steps you need and determine the appropriate equipment. Regards, At 03:02 PM 12/10/2010, Robert Huang wrote: >Dear Specmat committee: > >Is SiC an approved material for processing on any SNF equipment? If >so, I'd appreciate any details in terms of what contamination >category it is, which tools it is approved for, and any other >protocol that I should follow. > >Regards, > >Robert Huang From roberth at quswami.com Fri Dec 10 17:00:03 2010 From: roberth at quswami.com (Robert Huang) Date: Fri, 10 Dec 2010 17:00:03 -0800 Subject: processing of SiC in SNF... In-Reply-To: <6.2.5.6.2.20101210154039.05140000@stanford.edu> References: <3F24868DDBDC7B46B2289E33B58C4CB11FAEB92E5F@QUSWAMI-DSRV1.quswami.local> <6.2.5.6.2.20101210154039.05140000@stanford.edu> Message-ID: <3F24868DDBDC7B46B2289E33B58C4CB11FAEB92E63@QUSWAMI-DSRV1.quswami.local> Ed, Thanks for the info. If you're available, can we talk some on Monday morning? I won't be at SNF but can give you a call. Regards, Robert -----Original Message----- From: Ed Myers [mailto:edmyers at stanford.edu] Sent: Friday, December 10, 2010 3:42 PM To: Robert Huang; specmat at snf.stanford.edu Subject: Re: processing of SiC in SNF... Robert, We have experience of running SiC from Berkeley. We would need to talk about what steps you need and determine the appropriate equipment. Regards, At 03:02 PM 12/10/2010, Robert Huang wrote: >Dear Specmat committee: > >Is SiC an approved material for processing on any SNF equipment? If >so, I'd appreciate any details in terms of what contamination >category it is, which tools it is approved for, and any other >protocol that I should follow. > >Regards, > >Robert Huang From fc3 at stanford.edu Tue Dec 14 14:11:44 2010 From: fc3 at stanford.edu (Frank Chen) Date: Tue, 14 Dec 2010 14:11:44 -0800 Subject: Be on Si Message-ID: <602DA9BEA0DC420FA43B6E9592E361FF@FrankChen> Hi, I was wondering if it is possible to do beryllium deposition on a silicon wafer and etch the silicon. Thank you. -Frank -------------- next part -------------- An HTML attachment was scrubbed... URL: From edmyers at stanford.edu Tue Dec 14 15:03:34 2010 From: edmyers at stanford.edu (Ed Myers) Date: Tue, 14 Dec 2010 15:03:34 -0800 Subject: Be on Si In-Reply-To: <602DA9BEA0DC420FA43B6E9592E361FF@FrankChen> References: <602DA9BEA0DC420FA43B6E9592E361FF@FrankChen> Message-ID: <6.2.5.6.2.20101214150239.056b7dc8@stanford.edu> Frank, Could you provide the MSDS sheet for Be. Please make sure you read the MSDS and let us know more about how you expect to process the Be layer. Ed At 02:11 PM 12/14/2010, Frank Chen wrote: >Hi, > >I was wondering if it is possible to do beryllium deposition on a >silicon wafer and etch the silicon. Thank you. > >-Frank From fc3 at stanford.edu Tue Dec 14 15:24:01 2010 From: fc3 at stanford.edu (Frank Chen) Date: Tue, 14 Dec 2010 15:24:01 -0800 Subject: Be on Si In-Reply-To: <6.2.5.6.2.20101214150239.056b7dc8@stanford.edu> References: <602DA9BEA0DC420FA43B6E9592E361FF@FrankChen> <6.2.5.6.2.20101214150239.056b7dc8@stanford.edu> Message-ID: Here is the MSDS sheet for Be solid. I think the main concern is during deposition when it is not in its solid form where it can be highly toxic. If it's not possible to do the deposition at the SNF, I was wondering if the Si etching can be done (with the Be layer on). -Frank -----Original Message----- From: Ed Myers Sent: Tuesday, December 14, 2010 3:03 PM To: Frank Chen ; specmat at snf.stanford.edu Subject: Re: Be on Si Frank, Could you provide the MSDS sheet for Be. Please make sure you read the MSDS and let us know more about how you expect to process the Be layer. Ed At 02:11 PM 12/14/2010, Frank Chen wrote: >Hi, > >I was wondering if it is possible to do beryllium deposition on a silicon >wafer and etch the silicon. Thank you. > >-Frank -------------- next part -------------- A non-text attachment was scrubbed... Name: Be MSDS.pdf Type: application/pdf Size: 165918 bytes Desc: not available URL: