From mahnaz at stanford.edu  Mon Feb  1 08:16:02 2010
From: mahnaz at stanford.edu (Mahnaz Mansourpour)
Date: Mon, 01 Feb 2010 08:16:02 -0800
Subject: [POSSIBLE VIRUS:###] [Fwd: FW: failure notice]
Message-ID: <28803_1265041017_4B66FE75_28803_177216_1_4B66FE42.2000201@stanford.edu>

 From labmember ( Gavin Zhu)  behalf.

mahnaz
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From: "Gavin Zhu [US Gavin Zhu]" <tzhu at us.aosmd.com>
Subject: FW: failure notice
Date: Fri, 29 Jan 2010 15:51:10 -0800
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From mahnaz at stanford.edu  Mon Feb  1 08:22:12 2010
From: mahnaz at stanford.edu (Mahnaz Mansourpour)
Date: Mon, 01 Feb 2010 08:22:12 -0800
Subject: AZnlof
Message-ID: <4B66FFB4.8070702@stanford.edu>

Hi Gavin,

I did send your request to specmat committee.

Your chemical has been approved to be used in the SNF lab.
Please stop by my office and fill out the proper forms and get the 
yellow labels for your  chemical.
For now your material can be spun up on Laurell which you have been 
trained for.
As I mentioned to you I do have an interest in this resist please let me 
know what vendor are you getting the material from?

mahnaz


From mahnaz at stanford.edu  Mon Feb  1 08:23:23 2010
From: mahnaz at stanford.edu (Mahnaz Mansourpour)
Date: Mon, 01 Feb 2010 08:23:23 -0800
Subject: [POSSIBLE VIRUS:###] [Fwd: MSDS]
Message-ID: <7284_1265041405_4B66FFFC_7284_164126_1_4B66FFFB.504@stanford.edu>


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From: Alvin Barlian <alvin.barlian at halcyonmolecular.com>
Subject: MSDS
Date: Sat, 30 Jan 2010 21:10:51 -0800
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From mahnaz at stanford.edu  Mon Feb  1 08:31:57 2010
From: mahnaz at stanford.edu (Mahnaz Mansourpour)
Date: Mon, 01 Feb 2010 08:31:57 -0800
Subject: [POSSIBLE VIRUS:###] [Fwd: GaN Material]
Message-ID: <7282_1265041917_4B6701FD_7282_20666_1_4B6701FD.8030201@stanford.edu>

 From Gavin Zhu behalf.

mahnaz
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From: "Gavin Zhu [US Gavin Zhu]" <tzhu at us.aosmd.com>
Subject: GaN Material
Date: Fri, 29 Jan 2010 16:54:25 -0800
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From mtang at stanford.edu  Mon Feb  1 11:08:37 2010
From: mtang at stanford.edu (Mary Tang)
Date: Mon, 01 Feb 2010 11:08:37 -0800
Subject: [POSSIBLE VIRUS:###] [Fwd: GaN Material]
In-Reply-To: <7282_1265041917_4B6701FD_7282_20666_1_4B6701FD.8030201@stanford.edu>
References: <7282_1265041917_4B6701FD_7282_20666_1_4B6701FD.8030201@stanford.edu>
Message-ID: <4B6726B5.8040807@stanford.edu>

Hi Gavin --


Please let us know which processes you want to use for your material. 
We'll have to consider the stability and cleanliness level of your 
materials with regard to the processes you want to use.

Thanks,

Mary


Mahnaz Mansourpour wrote:
> From Gavin Zhu behalf.
>
> mahnaz
>
> ------------------------------------------------------------------------
>
> Subject:
> GaN Material
> From:
> "Gavin Zhu [US Gavin Zhu]" <tzhu at us.aosmd.com>
> Date:
> Fri, 29 Jan 2010 16:54:25 -0800
> To:
> "Mary Tang" <mtang at stanford.edu>, <mahnaz at snf.stanford.edu>
>
> To:
> "Mary Tang" <mtang at stanford.edu>, <mahnaz at snf.stanford.edu>
>
>
> Dear Committee,
>
> As I mentioned in previous email, the special material panel mail is 
> not through for me.
>
> Since I discuss with Uli, she need to know my material (GaN epitaxial 
> on top of sapphire) in which equipment group.
>
> I would like to appeal as Clean material, but it depends on your 
> approval, The GaN will not decompose until 1500C.
>
> Here is some link about GaN http://en.wikipedia.org/wiki/Gallium_nitride
>
> Your professional consideration will be much appreciated,
>
> Best regards,
>
> Gavin
>
> **Alpha & Omega Semiconductor, Inc.**
>
> 495 Mercury Drive | Sunnyvale CA 94085 | USA
>
> Direct: 408-789-3207 | Fax: 408-830-9749
>
> Email: tzhu at aosmd.com <mailto:tzhu at aosmd.com>
>


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu



From mtang at stanford.edu  Mon Feb  1 11:36:09 2010
From: mtang at stanford.edu (Mary Tang)
Date: Mon, 01 Feb 2010 11:36:09 -0800
Subject: [POSSIBLE VIRUS:###] [Fwd: MSDS]
In-Reply-To: <7284_1265041405_4B66FFFC_7284_164126_1_4B66FFFB.504@stanford.edu>
References: <7284_1265041405_4B66FFFC_7284_164126_1_4B66FFFB.504@stanford.edu>
Message-ID: <4B672D29.1010608@stanford.edu>

Hi Alvin --


Two of the three have been used in the lab before, but in solution 
form.  These were spin-coated on the headway and processed through Ebeam 
(polyaniline) or other lithography and general wet bench steps.  The 
4-phenythiophenol has not been previously approved -- it doesn't seem to 
have a CAS number so would not appear to be a commonly used chemical.  I 
think we would need a detailed procedure on how it is to be handled.  
Particularly as thiophenols typically stink to high heaven.


Also, we do not allow mixing of powders inside the lab.  The high air 
flow causes stuff to blow around - and if even if you work in a 
designated bench area, powders and crystals tend to blow all over the 
inside of the hood.  So mixing should be done outside the lab -- the 
wafersaw area can be used for pre-approved chemicals and chemical 
mixtures.  Please provide some details about the solutions you would 
like to mix up (solvent, concentration, and special handling, such as 
heating) and where you would like to use them in the lab (spin coating, 
hot plate, oven?)


Thanks,

Mary



Mahnaz Mansourpour wrote:
>
> ------------------------------------------------------------------------
>
> Subject:
> MSDS
> From:
> Alvin Barlian <alvin.barlian at halcyonmolecular.com>
> Date:
> Sat, 30 Jan 2010 21:10:51 -0800
> To:
> Mahnaz Mansourpour <mahnaz at stanford.edu>
>
> To:
> Mahnaz Mansourpour <mahnaz at stanford.edu>
>
>
> Hi Mahnaz,
>
> I'm wondering if these materials could be approved to be brought into 
> the fab. Attached are the MSDS for all three of them. We plan to coat 
> our wafers with them (manual coating). The rest of the processing will 
> be done outside of SNF. 
>
> Thank you Mahnaz,
>
> Alvin
>
>
>
>>
>
> ------------------------------------------------------------------------
>
>
> ------------------------------------------------------------------------
>
>
> ------------------------------------------------------------------------
>
>


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu

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From edmyers at stanford.edu  Mon Feb  1 12:45:14 2010
From: edmyers at stanford.edu (Ed Myers)
Date: Mon, 01 Feb 2010 12:45:14 -0800
Subject: [POSSIBLE VIRUS:###] [Fwd: GaN Material]
In-Reply-To: <4B6726B5.8040807@stanford.edu>
References: <7282_1265041917_4B6701FD_7282_20666_1_4B6701FD.8030201@stanford.edu>
 <4B6726B5.8040807@stanford.edu>
Message-ID: <6.2.5.6.2.20100201124134.05a12bf8@stanford.edu>

Gavin,

What Mary asks is actually only part of the equation.  We need to be 
concerned about any contaminates which might have been introduced 
during processing.  When we receive a request on an unknown substrate 
we typically ask for TXRF data to quantify what might be in the film 
and substrate.  The trace analysis is used to quantify what level of 
contamination might brought in with the samples.

Regards,
Ed

At 11:08 AM 2/1/2010, Mary Tang wrote:
>Hi Gavin --
>
>
>Please let us know which processes you want to use for your 
>material. We'll have to consider the stability and cleanliness level 
>of your materials with regard to the processes you want to use.
>
>Thanks,
>
>Mary
>
>
>Mahnaz Mansourpour wrote:
>> From Gavin Zhu behalf.
>>
>>mahnaz
>>
>>------------------------------------------------------------------------
>>
>>Subject:
>>GaN Material
>>From:
>>"Gavin Zhu [US Gavin Zhu]" <tzhu at us.aosmd.com>
>>Date:
>>Fri, 29 Jan 2010 16:54:25 -0800
>>To:
>>"Mary Tang" <mtang at stanford.edu>, <mahnaz at snf.stanford.edu>
>>
>>To:
>>"Mary Tang" <mtang at stanford.edu>, <mahnaz at snf.stanford.edu>
>>
>>
>>Dear Committee,
>>
>>As I mentioned in previous email, the special material panel mail 
>>is not through for me.
>>
>>Since I discuss with Uli, she need to know my material (GaN 
>>epitaxial on top of sapphire) in which equipment group.
>>
>>I would like to appeal as Clean material, but it depends on your 
>>approval, The GaN will not decompose until 1500C.
>>
>>Here is some link about GaN http://en.wikipedia.org/wiki/Gallium_nitride
>>
>>Your professional consideration will be much appreciated,
>>
>>Best regards,
>>
>>Gavin
>>
>>**Alpha & Omega Semiconductor, Inc.**
>>
>>495 Mercury Drive | Sunnyvale CA 94085 | USA
>>
>>Direct: 408-789-3207 | Fax: 408-830-9749
>>
>>Email: tzhu at aosmd.com <mailto:tzhu at aosmd.com>
>
>
>--
>Mary X. Tang, Ph.D.
>Stanford Nanofabrication Facility
>CIS Room 136, Mail Code 4070
>Stanford, CA  94305
>(650)723-9980
>mtang at stanford.edu
>http://snf.stanford.edu




From karthikv at stanford.edu  Mon Feb  1 22:33:08 2010
From: karthikv at stanford.edu (Karthik Vijayraghavan)
Date: Mon, 1 Feb 2010 22:33:08 -0800
Subject: Request for methanol based rinse following HF dip in wbdiff
Message-ID: <f52888441002012233n40f45b58wdf4822cb77a5a1d0@mail.gmail.com>

Hi,

I have a process step where I have an SOI wafer on which I intend to deposit
silicon nitride in tylannitride. My process is expected to be sensitive to
the native oxide that is expected to be present between the silicon wafer
and nitride layer above it. I would like to use a slightly modified diff
clean that differs only in the way the wafer is rinsed following the final
HF dip.

Standard diffusion clean in wbdiff involves an HF dip which is meant to
remove native oxide from the surface. However, this native oxide quickly
grows back by the time the wafer is rinsed in water and transferred to the
respective furnace. I would like to use a methanol based (4:1 methanol:water
followed by 100% methanol) rinsing solution instead of DI water. This
treatment leaves the surface with Hydrogen termination which in turn
suppresses the growth of native oxide long enough to transfer the wafer into
furnaces. I will use my own clean recommended labware and will follow any
cleaning procedure required prior to putting the wafers inside the furnaces.

Please find attached work from Prof. Howe group (when he was at Berkeley)
which shows how this method works. Specifically look at "Treatment I" in
"Table I" and the results in "Table III".

Regards,
Karthik
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From mmlee at stanford.edu  Mon Feb 22 16:04:16 2010
From: mmlee at stanford.edu (Meredith Marie Lee)
Date: Mon, 22 Feb 2010 16:04:16 -0800 (PST)
Subject: Request for dirty polySi
Message-ID: <1612100787.2144321266883456758.JavaMail.root@zm02.stanford.edu>

Greetings, 

I'm interested in depositing ~2-3 microns of dirty polysilicon on 3.4mm-6.4mm thick quartz wafers (3-4" in diameter). Any updates on our capabilities for this in SNF would be greatly appreciated!

Thanks,
-Meredith

--------------------------------------------------
Meredith M. Lee
Stanford University
Ph.D. Candidate, Dept. of Electrical Engineering
Center for Integrated Systems
420 Via Ortega, Stanford, CA 94305-4075
Fax: (650) 723-4659
mmlee at stanford.edu