From yuxinz at stanford.edu Tue Jul 13 17:39:53 2010 From: yuxinz at stanford.edu (Yuxin Zheng) Date: Tue, 13 Jul 2010 17:39:53 -0700 (PDT) Subject: questions about process involving new chemicals In-Reply-To: <1809520316.465840.1279067981554.JavaMail.root@zm06.stanford.edu> Message-ID: <1853928643.465848.1279067993242.JavaMail.root@zm06.stanford.edu> Dear staff, I would like to use mercaptosuccinic acid(CAS:70-49-5) in my process. Basically I want to self-assemble a layer of thiols on the gold surface. The quality of the layer is not critical as the purpose is only to prevent polystyrene beads sticking to the gold surface. The assembly process is pretty much the last step of my whole process. The sample on which the self-assembly will be done is a 1cm x 1cm silicon wafer piece with thin gold film and nitride layer on it. The details of the assembly process is: dissolve the mercaptosuccinic acid powder into water to form 10ml-20ml solution. Sodium hydroxide may be added to neutralize it to some extent. The concentration is estimated to be 10^15 molecules/mL (or 10^-8 mol/mL). Then the sample is soaked in the solution for couple of minutes up to 8hrs. Besides, the whole reaction needs to be performed under stirring at~ 50?C. The 98% mercaptosuccinic acid powder(weight:25g) is purchased from Alfa Aesar. Attached is the MSDS I scanned. Can you give me suggestions on where and how I can perform the reactions? Thanks, Yuxin Zheng -------------- next part -------------- A non-text attachment was scrubbed... Name: msds_mercaptosuccinic acid.pdf Type: application/pdf Size: 3263570 bytes Desc: not available URL: From mtang at stanford.edu Thu Jul 15 08:53:05 2010 From: mtang at stanford.edu (Mary Tang) Date: Thu, 15 Jul 2010 08:53:05 -0700 Subject: questions about process involving new chemicals In-Reply-To: <1853928643.465848.1279067993242.JavaMail.root@zm06.stanford.edu> References: <1853928643.465848.1279067993242.JavaMail.root@zm06.stanford.edu> Message-ID: <4C3F2EE1.5090604@stanford.edu> Hi Yuxin -- Just a comment about your process... I suspect the mercaptosuccinic acid treatment will be effective only if your polystyrene beads are chemically functionalized with carboxylate or other groups which are negatively charged at neutral pH. If the pH isn't right, the sulfhydryl groups will fall off the gold and the succinic and carboxylate groups won't be negatively charged enough to repel each other. You should check the specifications on your beads: most of the calibration standard beads you can buy are NOT chemically functionalized. In short, you should double-check your references on the details of your surface treatment procedure. As for actually doing your process: 1. Make up your solution in the wafersaw room. No powders are allowed in the lab. There are mixing and weighing materials in the wafersaw room. If you do not have storage available in your own lab, it should be labeled and stored in the Flammables area outside the cleanroom. If you need a pH meter, let us know. If you need sodium hydroxide to neutralize your solution, you should order a dilute solution from Sigma (BioStores may have this). Mixed chemical solutions should be transported in a double-contained carrier to the pass-through area to the lab. Please contact Uli, Mahnaz or me to review the detailed procedures. 2. The assembly process should be done at wbgeneral. I see you are already qualified on wbgeneral, but you should check with Uli to make sure about setting up the heater/stirrer for your process. 3. Since your solution is dilute, it and the rinse water can be aspirated into the AWN (no need for collecting waste.) Mary Yuxin Zheng wrote: > Dear staff, > > I would like to use mercaptosuccinic acid(CAS:70-49-5) in my process. Basically I want to self-assemble a layer of thiols on the gold surface. The quality of the layer is not critical as the purpose is only to prevent polystyrene beads sticking to the gold surface. > The assembly process is pretty much the last step of my whole process. The sample on which the self-assembly will be done is a 1cm x 1cm silicon wafer piece with thin gold film and nitride layer on it. > The details of the assembly process is: dissolve the mercaptosuccinic acid powder into water to form 10ml-20ml solution. Sodium hydroxide may be added to neutralize it to some extent. The concentration is estimated to be 10^15 molecules/mL (or 10^-8 mol/mL). Then the sample is soaked in the solution for couple of minutes up to 8hrs. Besides, the whole reaction needs to be performed under stirring at~ 50?C. > The 98% mercaptosuccinic acid powder(weight:25g) is purchased from Alfa Aesar. Attached is the MSDS I scanned. > > Can you give me suggestions on where and how I can perform the reactions? > > Thanks, > Yuxin Zheng -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From artyjamo at gmail.com Tue Jul 27 14:12:46 2010 From: artyjamo at gmail.com (Aleta Jamora) Date: Tue, 27 Jul 2010 14:12:46 -0700 Subject: POCL project - Translucent Inc Message-ID: Hello spec mat, My boss Andrew Clark, ( VP of Translucent Inc ) has a project that needs to be completed by the end of August that wuold require processing Silicon wafers with Gd oxide (Gadolinium Oxide) and possibly SiGe layers in Tylan 6, the POCL diffusion furnace. I'm including a brief Power Point file from Andrew and also an MSDS sheet for Gadolinium Oxide. The process flow would involve fabricating wafers by growing a 500 - 1000Ang full film of Gadolinium Oxide on a bare/new 4 inch Silicon wafer and then growing a 2um capping layer of Silicon or Silicon Germaium on top of the Gadolinium oxide. The fabrication of these wafers would take place at Translucent's facility in Palo Alto. We would like to then put the wafers in tylan 6, the POCL furnace and use the POCL800A recipe for a 15 to 30 min process. We want to process 5 wafers in a single run. Prior to putting the wafers in the POCL furnace, we would need to do a diffusion clean. We should discuss what (and where) diffusion clean would be needed and appropriate prior to the putting wafers in Tylan 6. If it is not appropriate to use SNF's WBDiff, we have a diffusion cleaning bench here at Translucent. I would be willing to do the processing of these wafers at a time when there is not a lot of activity in the lab, so that I could do a decontamination on the diffusion clean bench after cleaning the wafers. The diffusion clean process we are plannining would be SNF's standard diffusion clean - Sulfuric Acid/Hydrogen peroxide & dump rinse followed by an HCl/Hydrogen Peroxide & dump rinse followed by a 50:1 HF dip & dump rinse + Spin Rinse Dry. We have photomask orders pending your decision. Please respond to us ASAP or by the end of this week, July 30th with questions, concerns or requests for more information. We would like to immediately start discussing how this POCL doping run might be accomplished at SNF. Much Thanks, Aleta Jamora Sr Process Engineer Translucent Inc 952 Commercial Street Palo Alto, CA 94303 cell 510 378 1602 -------------- next part -------------- An HTML attachment was scrubbed... URL: From artyjamo at gmail.com Tue Jul 27 14:19:58 2010 From: artyjamo at gmail.com (Aleta Jamora) Date: Tue, 27 Jul 2010 14:19:58 -0700 Subject: Fwd: POCL project - Translucent Inc w/ files Message-ID: Sorry, forgot attachments first time -A ---------- Forwarded message ---------- From: Aleta Jamora Date: Tue, Jul 27, 2010 at 2:12 PM Subject: POCL project - Translucent Inc To: specmat stanford Hello spec mat, My boss Andrew Clark, ( VP of Translucent Inc ) has a project that needs to be completed by the end of August that wuold require processing Silicon wafers with Gd oxide (Gadolinium Oxide) and possibly SiGe layers in Tylan 6, the POCL diffusion furnace. I'm including a brief Power Point file from Andrew and also an MSDS sheet for Gadolinium Oxide. The process flow would involve fabricating wafers by growing a 500 - 1000Ang full film of Gadolinium Oxide on a bare/new 4 inch Silicon wafer and then growing a 2um capping layer of Silicon or Silicon Germaium on top of the Gadolinium oxide. The fabrication of these wafers would take place at Translucent's facility in Palo Alto. We would like to then put the wafers in tylan 6, the POCL furnace and use the POCL800A recipe for a 15 to 30 min process. We want to process 5 wafers in a single run. Prior to putting the wafers in the POCL furnace, we would need to do a diffusion clean. We should discuss what (and where) diffusion clean would be needed and appropriate prior to the putting wafers in Tylan 6. If it is not appropriate to use SNF's WBDiff, we have a diffusion cleaning bench here at Translucent. I would be willing to do the processing of these wafers at a time when there is not a lot of activity in the lab, so that I could do a decontamination on the diffusion clean bench after cleaning the wafers. The diffusion clean process we are plannining would be SNF's standard diffusion clean - Sulfuric Acid/Hydrogen peroxide & dump rinse followed by an HCl/Hydrogen Peroxide & dump rinse followed by a 50:1 HF dip & dump rinse + Spin Rinse Dry. We have photomask orders pending your decision. Please respond to us ASAP or by the end of this week, July 30th with questions, concerns or requests for more information. We would like to immediately start discussing how this POCL doping run might be accomplished at SNF. Much Thanks, Aleta Jamora Sr Process Engineer Translucent Inc 952 Commercial Street Palo Alto, CA 94303 cell 510 378 1602 -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: POCl processing SiGe ? oxide ? Si wafers.ppt Type: application/vnd.ms-powerpoint Size: 24064 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: MSDS_gadoliniumoxide.pdf Type: application/pdf Size: 46095 bytes Desc: not available URL: From usharaghuram at gmail.com Wed Jul 28 13:54:59 2010 From: usharaghuram at gmail.com (Usha Raghuram) Date: Wed, 28 Jul 2010 13:54:59 -0700 Subject: HD-3007 polyimide and thinnerT9039 Message-ID: Hello, I have ordered HD-3007 and the thinner T-9039 for my experiments and would like to get approval for using them. Attached are the process guide for these materials. Regards, Usha -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: HD-3007 Process Guide.pdf Type: application/pdf Size: 156051 bytes Desc: not available URL: From mahnaz at stanford.edu Wed Jul 28 15:32:32 2010 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Wed, 28 Jul 2010 15:32:32 -0700 Subject: [POSSIBLE VIRUS:###] [Fwd: SBA Materials Process Flow] Message-ID: <24520_1280356354_4C50B001_24520_597_1_4C50B000.8070505@stanford.edu> If any one has any info from past on this, please forward it to me. I have lost some emails so I am not able to track this down and their claim is that I have ok'd this few years back. mahnaz -------------- next part -------------- An embedded message was scrubbed... From: Marc Schrier Subject: SBA Materials Process Flow Date: Mon, 26 Jul 2010 16:01:27 -0700 Size: 213793 URL: From mahnaz at stanford.edu Fri Jul 30 13:49:16 2010 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Fri, 30 Jul 2010 13:49:16 -0700 Subject: Fwd: HD-3007 polyimide and thinnerT9039 In-Reply-To: References: Message-ID: <4C533ACC.2010604@stanford.edu> Hi Usha , This is to let you know that you are confirmed on the use of these chemicals. Usha has given me the hard copy of the MSDS which for now I am putting it in the chemical log binder in my office. I have asked the mixture get mixed in a small bottle so we can get rid of it easily. I have asked and Usha understand the cleaning of back of the wafers is a must for ASML so after the blue dicing removed still should be cleaned ( q-tips) quickly before going to hot plate. mahnaz Usha Raghuram wrote: > Hi Mahnaz, > > Below is my plan as to how this polyimide will be processed and > subsequent processing steps. > > 1. Thin poly imide with thinner and coat in Headway - Need 3 labels, > one for thinned material, one for thinner (T-9039)and one for > polyimide (HD-3007). > 2. Bake and cure - Blue-M and hot plate > 3. Resist spin, Expose (ASML) and develop - Will use blue tape before > coating with polyimide to keep the backside clean. > 4. Etch & clean - Drytek 4 - solvent clean (wbmiscres) > 5. Coat with resist and expose - ASML > 6. Innotec metal dep & lift off. > 7. Attach top wafer - Blue M oven / hot plate bake > 8. Handle wafer removal - back grind / etch - contaminated tool set or > outside processing. > 9. Polyimide coat, cure, resist coat, pattern (contact printing) & etch > 10. Wafer saw. > > Regards, > > Usha > > Note: HD-3007 is commonly used in wafer bonding proces. Attached is > is a reference for that. > > ---------- Forwarded message ---------- > From: *Usha Raghuram* > > Date: Wed, Jul 28, 2010 at 1:54 PM > Subject: HD-3007 polyimide and thinnerT9039 > To: specmat at snf.stanford.edu > > > Hello, > > I have ordered HD-3007 and the thinner T-9039 for my experiments and > would like to get approval for using them. Attached are the process > guide for these materials. > > Regards, > > Usha >