From liyuhung at stanford.edu Mon Oct 4 12:51:40 2010 From: liyuhung at stanford.edu (Yu-Hung Li) Date: Mon, 4 Oct 2010 12:51:40 -0700 (PDT) Subject: Sol-gel process reguest In-Reply-To: <1775603399.13775.1286221414412.JavaMail.root@zm02.stanford.edu> Message-ID: <536905283.14020.1286221900376.JavaMail.root@zm02.stanford.edu> User: liyuhung Materials: sol-gel precursors for BiScO3-PbTiO3, solvents and microemulsion solutions (please see the attached file) Process: microemulsion aided sol-gel process on Si wafer (detailed procedures are included in the attached file) Request: 1. To use the spin-coater and the bench in the utility room (next to the stock room) 2. To use the RTA in the lab for final crystallization. -------------- next part -------------- A non-text attachment was scrubbed... Name: BS-PT Sol-gel procedure.pdf Type: application/pdf Size: 102583 bytes Desc: not available URL: From mtang at stanford.edu Mon Oct 4 14:54:39 2010 From: mtang at stanford.edu (Mary Tang) Date: Mon, 04 Oct 2010 14:54:39 -0700 Subject: Sol-gel process reguest In-Reply-To: <536905283.14020.1286221900376.JavaMail.root@zm02.stanford.edu> References: <536905283.14020.1286221900376.JavaMail.root@zm02.stanford.edu> Message-ID: <4CAA4D1F.6070302@stanford.edu> Hi Yu-Hung -- First, we would need MSDS forms for all these chemicals (the ones that are not normally stocked at SNF). Second, have you undergone chemical handling training in ChemE or Chemistry or Mat Sci labs on campus? Your procedure has some practices that are not standard for SNF that we'd need to map out in more detail. Third, Ed -- is crystallization in the RTA acceptable? Mary Yu-Hung Li wrote: > User: liyuhung > > Materials: sol-gel precursors for BiScO3-PbTiO3, solvents and microemulsion solutions (please see the attached file) > > Process: microemulsion aided sol-gel process on Si wafer (detailed procedures are included in the attached file) > > Request: > 1. To use the spin-coater and the bench in the utility room (next to the stock room) > 2. To use the RTA in the lab for final crystallization. -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From liyuhung at stanford.edu Mon Oct 4 16:46:41 2010 From: liyuhung at stanford.edu (Yu-Hung Li) Date: Mon, 4 Oct 2010 16:46:41 -0700 (PDT) Subject: Sol-gel process reguest In-Reply-To: <4CAA4D1F.6070302@stanford.edu> Message-ID: <55130789.23512.1286236001275.JavaMail.root@zm02.stanford.edu> Hi Mary, Thanks for your information! Attached are all the MSDSs of the materials that we are going to use, except for IPA and distilled water. Second, I have taken the Health and Safety Training for new graduate students in MatSci department in 2008. I'm not sure whether it is the one or not. I'm willing to take any extra training if it is needed. Best regards, Yu-Hung ----- Original Message ----- From: "Mary Tang" To: "Yu-Hung Li" Cc: specmat at snf.stanford.edu Sent: Monday, October 4, 2010 2:54:39 PM Subject: Re: Sol-gel process reguest Hi Yu-Hung -- First, we would need MSDS forms for all these chemicals (the ones that are not normally stocked at SNF). Second, have you undergone chemical handling training in ChemE or Chemistry or Mat Sci labs on campus? Your procedure has some practices that are not standard for SNF that we'd need to map out in more detail. Third, Ed -- is crystallization in the RTA acceptable? Mary Yu-Hung Li wrote: > User: liyuhung > > Materials: sol-gel precursors for BiScO3-PbTiO3, solvents and microemulsion solutions (please see the attached file) > > Process: microemulsion aided sol-gel process on Si wafer (detailed procedures are included in the attached file) > > Request: > 1. To use the spin-coater and the bench in the utility room (next to the stock room) > 2. To use the RTA in the lab for final crystallization. -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- A non-text attachment was scrubbed... Name: Bismuth(III) nitrate petahydrate_MSDS.pdf Type: application/pdf Size: 30791 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... 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Name: Cyclohexane_MSDS.pdf Type: application/pdf Size: 36371 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Acetylacetone_MSDS.pdf Type: application/pdf Size: 38855 bytes Desc: not available URL: From kavehm at ece.ucsb.edu Wed Oct 13 16:06:06 2010 From: kavehm at ece.ucsb.edu (Kaveh Milaninia) Date: Wed, 13 Oct 2010 16:06:06 -0700 Subject: Copper Etching Message-ID: <21da61ba57c6a862b7490ee72885f825.squirrel@mail.ece.ucsb.edu> I'd like to wet-etch some copper foils at wbgen. The copper etchant will come pre-mixed from Transene. The MSDS is attached to this email. Please let me know if you require any further information. Kaveh -------------- next part -------------- A non-text attachment was scrubbed... Name: Copper Etch APS-100.pdf Type: application/pdf Size: 39733 bytes Desc: not available URL: From mtang at stanford.edu Wed Oct 13 18:28:47 2010 From: mtang at stanford.edu (Mary Tang) Date: Wed, 13 Oct 2010 18:28:47 -0700 Subject: Copper Etching In-Reply-To: <21da61ba57c6a862b7490ee72885f825.squirrel@mail.ece.ucsb.edu> References: <21da61ba57c6a862b7490ee72885f825.squirrel@mail.ece.ucsb.edu> Message-ID: <4CB65CCF.6050905@stanford.edu> Hi Kaveh -- Thanks -- and sorry, I thought you were talking about a FeCl3-based etchant, but this has only ammonium persulfate and water. This should be fine for use at wbgeneral. When the material arrives, please store it in the chemicals passthrough, in the personal chemicals area. Make sure to get a yellow label and barcode from Mahnaz. If it is a small bottle, please place inside a larger bottle carrier and label the outside of the bottle carrier (this will discourage anyone from putting another small bottle of something incompatible next to it.) And because your waste contains heavy metals, please collect used etchant and the first couple of rinsates in a compatible container and label for hazardous waste disposal. I'm not sure about compatibility, so would recommend using a glass container for waste collection just to be on the safe side. Mary Kaveh Milaninia wrote: > I'd like to wet-etch some copper foils at wbgen. The copper etchant will > come pre-mixed from Transene. The MSDS is attached to this email. Please > let me know if you require any further information. > > Kaveh -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From kavehm at ece.ucsb.edu Thu Oct 14 09:51:15 2010 From: kavehm at ece.ucsb.edu (Kaveh Milaninia) Date: Thu, 14 Oct 2010 09:51:15 -0700 Subject: Copper Etching In-Reply-To: <4CB65CCF.6050905@stanford.edu> References: <21da61ba57c6a862b7490ee72885f825.squirrel@mail.ece.ucsb.edu> <4CB65CCF.6050905@stanford.edu> Message-ID: <003901cb6bc0$050aae30$0f200a90$@ece.ucsb.edu> Mary Sorry, I forgot transene had several copper etchants and I attached the wrong MSDS. I've attached the correct one to this email; hopefully it's still okay. If so, I will go ahead and order the etchant and will make sure I take all necessary precautions for both labeling of the container and waste once it comes in. Thanks. Kaveh -----Original Message----- From: Mary Tang [mailto:mtang at stanford.edu] Sent: Wednesday, October 13, 2010 6:29 PM To: kavehm at ece.ucsb.edu Cc: specmat at snf.stanford.edu; Uli Thumser Subject: Re: Copper Etching Hi Kaveh -- Thanks -- and sorry, I thought you were talking about a FeCl3-based etchant, but this has only ammonium persulfate and water. This should be fine for use at wbgeneral. When the material arrives, please store it in the chemicals passthrough, in the personal chemicals area. Make sure to get a yellow label and barcode from Mahnaz. If it is a small bottle, please place inside a larger bottle carrier and label the outside of the bottle carrier (this will discourage anyone from putting another small bottle of something incompatible next to it.) And because your waste contains heavy metals, please collect used etchant and the first couple of rinsates in a compatible container and label for hazardous waste disposal. I'm not sure about compatibility, so would recommend using a glass container for waste collection just to be on the safe side. Mary Kaveh Milaninia wrote: > I'd like to wet-etch some copper foils at wbgen. The copper etchant > will come pre-mixed from Transene. The MSDS is attached to this email. > Please let me know if you require any further information. > > Kaveh -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- A non-text attachment was scrubbed... Name: transene ce-100-200.pdf Type: application/pdf Size: 112314 bytes Desc: not available URL: From jprovine at stanford.edu Fri Oct 15 17:04:57 2010 From: jprovine at stanford.edu (J Provine) Date: Fri, 15 Oct 2010 17:04:57 -0700 Subject: ALD ALR In-Reply-To: <4CB8E98F.5060206@stanford.edu> References: <4CB8DDAA.1000406@stanford.edu> <4CB8E98F.5060206@stanford.edu> Message-ID: dear specmat, project to convert savannah line to allow room air introduction for oxygen source to oxidize substrates in chamber (part of EE412 project). to perform this i will shut off the NH3 source bottle and regulator...empty the line connecting source to the savannah manifold by purging the line by ald valve actuation. this will pull any residual NH3 through the system to the pump and out through scrubbed exhaust to same as during deposition operation. when no discernable pressure delta vs baseline is observed the line is empty enough to disconnect. the line will be disconnected at the needle valve which supplies a restricted flow orifice prior to the ald valve. for there the needle valve and ald valve serve as the intake restriction for the introducing room air into the chamber. we'll check the pressure pulses and adjust the input of room air to an appropriate amount based on ald valve actuation time and needle valve setting. an additional particle filter may be necessary to connect via VCR to the needle valve. the need for the oxygen source is on a per run basis. as that run is finished the NH3 bottle will be reconnected to the needle valve with a fresh VCR gasket. and the line will be purged into an empty chamber first with the regulator closed, then open to ensure that we have retrieved the NH3 precursor pulses seen before. advice or maintenance assistance as described by mary below is welcome. j On Fri, Oct 15, 2010 at 4:53 PM, Mary Tang wrote: > Hi J -- > > Thanks. John needs to decide -- and this could precipitate it. As a > start, could we treat this sort of like a specmat request? Could you just > write up a brief statement of what you need to do, for the record? Spec mat > emails are archived. > > M > > > J Provine wrote: > >> Mary, >> Please let me know which maintenance person should be involved and >> I'll coordinate with them. >> J >> >> On Friday, October 15, 2010, Mary Tang wrote: >> >> >>> Hi J -- >>> >>> I meant to ask you earlier but it slipped my mind.... If I understand >>> correctly, you had mentioned in the EE412 class plans to disconnect the NH3 >>> line from the Savannah to install a line filter to allow room air to serve >>> as the oxygen source.... Are you working with one of the maintenance staff >>> on this? I'd just like to make sure that there are no safety concerns. We >>> should generally have two levels of safety for any potentially hazardous >>> operation, and I'm not sure we've got this on the Savannah right now. >>> Presuming this hasn't been done yet, please do work with us to get this >>> done in a safe a manner as possible. Let us know. >>> >>> Thanks, >>> >>> Mary >>> >>> >>> -- >>> Mary X. Tang, Ph.D. >>> Stanford Nanofabrication Facility >>> CIS Room 136, Mail Code 4070 >>> Stanford, CA 94305 >>> (650)723-9980 >>> mtang at stanford.edu >>> http://snf.stanford.edu >>> >>> >>> >>> >> > > -- > Mary X. Tang, Ph.D. > Stanford Nanofabrication Facility > CIS Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu > > -------------- next part -------------- An HTML attachment was scrubbed... URL: From shott at stanford.edu Fri Oct 15 17:34:20 2010 From: shott at stanford.edu (John Shott) Date: Fri, 15 Oct 2010 17:34:20 -0700 Subject: ALD ALR In-Reply-To: References: <4CB8DDAA.1000406@stanford.edu> <4CB8E98F.5060206@stanford.edu> Message-ID: <4CB8F30C.1080900@stanford.edu> J: Swapping ammonia bottles on a per-run basis makes me somewhat nervous. Am I correct in thinking that, at the moment, the Savannah is not using all of its metallorganic "slots"? Rather than breaking into the ammonia line, is there a reason that one of the other channels that has a currently-unused ALD valve, can't be used for the oxygen injection needle valve? In that way, there would be no hardware changes required between runs, the ammonia line doesn't need to be disturbed at all, and selection of oxygen vs. ammonia is controlled by the recipe. What am I missing? Thanks, John From jprovine at stanford.edu Fri Oct 15 17:52:54 2010 From: jprovine at stanford.edu (J Provine) Date: Fri, 15 Oct 2010 17:52:54 -0700 Subject: ALD ALR In-Reply-To: <4CB8F30C.1080900@stanford.edu> References: <4CB8DDAA.1000406@stanford.edu> <4CB8E98F.5060206@stanford.edu> <4CB8F30C.1080900@stanford.edu> Message-ID: john, all lines on the system are currently being used. it doesn't have to be the ammonia bottle. it could be one of the organo-metallic precursors (h2o is no good because it is to be used for in situ etching of the GeOx that is formed). i chose the ammonia bottle because it has two valves for double shut off and already has the needle valve and doesn't utilize a heater jacket. so changing to another line (other than h2o) is fine, but it just trades ammonia for an organo-metallic precursor. j On Fri, Oct 15, 2010 at 5:34 PM, John Shott wrote: > J: > > Swapping ammonia bottles on a per-run basis makes me somewhat nervous. Am > I correct in thinking that, at the moment, the Savannah is not using all of > its metallorganic "slots"? Rather than breaking into the ammonia line, is > there a reason that one of the other channels that has a currently-unused > ALD valve, can't be used for the oxygen injection needle valve? In that > way, there would be no hardware changes required between runs, the ammonia > line doesn't need to be disturbed at all, and selection of oxygen vs. > ammonia is controlled by the recipe. > > What am I missing? > > Thanks, > > John > > -------------- next part -------------- An HTML attachment was scrubbed... URL: From jprovine at stanford.edu Wed Oct 20 06:39:31 2010 From: jprovine at stanford.edu (J Provine) Date: Wed, 20 Oct 2010 06:39:31 -0700 Subject: ALD ALR In-Reply-To: References: <4CB8DDAA.1000406@stanford.edu> <4CB8E98F.5060206@stanford.edu> <4CB8F30C.1080900@stanford.edu> Message-ID: john et al, any further thoughts on this project? j On Fri, Oct 15, 2010 at 5:52 PM, J Provine wrote: > john, > all lines on the system are currently being used. it doesn't have to be > the ammonia bottle. it could be one of the organo-metallic precursors (h2o > is no good because it is to be used for in situ etching of the GeOx that is > formed). > i chose the ammonia bottle because it has two valves for double shut off > and already has the needle valve and doesn't utilize a heater jacket. > > so changing to another line (other than h2o) is fine, but it just trades > ammonia for an organo-metallic precursor. > > j > > > On Fri, Oct 15, 2010 at 5:34 PM, John Shott wrote: > >> J: >> >> Swapping ammonia bottles on a per-run basis makes me somewhat nervous. Am >> I correct in thinking that, at the moment, the Savannah is not using all of >> its metallorganic "slots"? Rather than breaking into the ammonia line, is >> there a reason that one of the other channels that has a currently-unused >> ALD valve, can't be used for the oxygen injection needle valve? In that >> way, there would be no hardware changes required between runs, the ammonia >> line doesn't need to be disturbed at all, and selection of oxygen vs. >> ammonia is controlled by the recipe. >> >> What am I missing? >> >> Thanks, >> >> John >> >> > -------------- next part -------------- An HTML attachment was scrubbed... URL: From jprovine at stanford.edu Wed Oct 20 08:45:54 2010 From: jprovine at stanford.edu (J Provine) Date: Wed, 20 Oct 2010 08:45:54 -0700 Subject: ALD ALR In-Reply-To: References: <4CB8DDAA.1000406@stanford.edu> <4CB8E98F.5060206@stanford.edu> <4CB8F30C.1080900@stanford.edu>

Message-ID: i just ran into mary in the hallway, and she suggested that instead of swapping the NH3, it would be preferred from a safety standpoint to swap out one of the precursors. to me the perferred precursor choice is the W source because 1) it is the least used 2) it has the lowest vapor pressure the added effort for removing W vs NH3 is pretty minimal but non-zero. it involves: 1) more time for cooling the source and jacket a bit for removal 2) an additional particle filter/RFO (since the one on the ammonia line would still be intact) that's it - otherwise it is like any other precursor swap. additionally, if it wasn't clear from the previous email this isn't something any of the users would be doing, instead i would do the changes both before and after experiment. as before, advice and assistance in moving this project forward is welcome. j On Wed, Oct 20, 2010 at 6:39 AM, J Provine wrote: > john et al, > any further thoughts on this project? > j > > > On Fri, Oct 15, 2010 at 5:52 PM, J Provine wrote: > >> john, >> all lines on the system are currently being used. it doesn't have to be >> the ammonia bottle. it could be one of the organo-metallic precursors (h2o >> is no good because it is to be used for in situ etching of the GeOx that is >> formed). >> i chose the ammonia bottle because it has two valves for double shut off >> and already has the needle valve and doesn't utilize a heater jacket. >> >> so changing to another line (other than h2o) is fine, but it just trades >> ammonia for an organo-metallic precursor. >> >> j >> >> >> On Fri, Oct 15, 2010 at 5:34 PM, John Shott wrote: >> >>> J: >>> >>> Swapping ammonia bottles on a per-run basis makes me somewhat nervous. >>> Am I correct in thinking that, at the moment, the Savannah is not using all >>> of its metallorganic "slots"? Rather than breaking into the ammonia line, >>> is there a reason that one of the other channels that has a currently-unused >>> ALD valve, can't be used for the oxygen injection needle valve? In that >>> way, there would be no hardware changes required between runs, the ammonia >>> line doesn't need to be disturbed at all, and selection of oxygen vs. >>> ammonia is controlled by the recipe. >>> >>> What am I missing? >>> >>> Thanks, >>> >>> John >>> >>> >> > -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Wed Oct 20 09:32:19 2010 From: mtang at stanford.edu (Mary Tang) Date: Wed, 20 Oct 2010 09:32:19 -0700 Subject: [Fwd: LGA Al films] Message-ID: <4CBF1993.5000203@stanford.edu> Hi all -- What do you think? (Ed?) M -------- Original Message -------- Subject: LGA Al films Date: Wed, 20 Oct 2010 08:55:13 -0700 From: Richard Yeh To: Mary Tang Hi Mary, Our gryphon tool currently has a pressure stability problem and I'm thinking of outsourcing a thin Al dep step to LGA (http://www.lgafilms.com/). After the Al dep, I'd like to pattern that at SNF. Does SNF consider LGA processed wafers CMOS clean? I'd like to make sure I don't contaminate clean tools. Thanks, Richard -- Alces Technology PO Box 11180 Jackson, WY 83002 (510) 299-2377 Mobile (408) 716-8242 Office (California) (307) 732-1994x7 Office (Wyoming) -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mtang at stanford.edu Wed Oct 20 09:50:07 2010 From: mtang at stanford.edu (Mary Tang) Date: Wed, 20 Oct 2010 09:50:07 -0700 Subject: [Fwd: LGA Al films] In-Reply-To: <4CBF1993.5000203@stanford.edu> References: <4CBF1993.5000203@stanford.edu> Message-ID: <4CBF1DBF.6060702@stanford.edu> Richard also asks if there is an already-qualified place for Al dep. Recommendations? M Mary Tang wrote: > Hi all -- > > What do you think? (Ed?) > > M > > -------- Original Message -------- > Subject: LGA Al films > Date: Wed, 20 Oct 2010 08:55:13 -0700 > From: Richard Yeh > To: Mary Tang > > > > Hi Mary, > > Our gryphon tool currently has a pressure stability problem and I'm > thinking of outsourcing a thin Al dep step to LGA > (http://www.lgafilms.com/). After the Al dep, I'd like to pattern > that at SNF. Does SNF consider LGA processed wafers CMOS clean? I'd > like to make sure I don't contaminate clean tools. > > Thanks, > Richard > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From edmyers at stanford.edu Wed Oct 20 10:12:25 2010 From: edmyers at stanford.edu (Ed Myers) Date: Wed, 20 Oct 2010 10:12:25 -0700 Subject: [Fwd: LGA Al films] In-Reply-To: <4CBF1993.5000203@stanford.edu> References: <4CBF1993.5000203@stanford.edu> Message-ID: <6.2.5.6.2.20101020101132.058a41e0@stanford.edu> All, In the past LGA has been considered gold contaminated. Ed At 09:32 AM 10/20/2010, Mary Tang wrote: >Hi all -- > >What do you think? (Ed?) > >M > >-------- Original Message -------- >Subject: LGA Al films >Date: Wed, 20 Oct 2010 08:55:13 -0700 >From: Richard Yeh >To: Mary Tang > > > >Hi Mary, > >Our gryphon tool currently has a pressure stability problem and I'm >thinking of outsourcing a thin Al dep step to LGA >(http://www.lgafilms.com/). After the Al dep, I'd like to pattern >that at SNF. Does SNF consider LGA processed wafers CMOS >clean? I'd like to make sure I don't contaminate clean tools. > >Thanks, >Richard > >-- >Alces Technology >PO Box 11180 >Jackson, WY 83002 >(510) 299-2377 Mobile >(408) 716-8242 Office (California) >(307) 732-1994x7 Office (Wyoming) > > > > >-- >Mary X. Tang, Ph.D. >Stanford Nanofabrication Facility >CIS Room 136, Mail Code 4070 >Stanford, CA 94305 >(650)723-9980 >mtang at stanford.edu >http://snf.stanford.edu From mahnaz at stanford.edu Wed Oct 20 13:35:00 2010 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Wed, 20 Oct 2010 13:35:00 -0700 Subject: Fwd: Spinning Ag Paste? Message-ID: <4CBF5274.5010501@stanford.edu> From his behalf. -------- Original Message -------- Subject: Spinning Ag Paste? Date: Wed, 20 Oct 2010 12:46:40 -0700 (PDT) From: Jeffrey M. Weisse To: mahnaz at snf.stanford.edu, mahnaz at snf.stanford.edu Hi Mahnaz, I am interested in spin coating Ag Paste however, since it is conductive I feel it may be an issue. Is Ag paste allowed in the Headway or any other of SNF's spin coaters? Thank you, Jeff -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Wed Oct 20 14:33:50 2010 From: mtang at stanford.edu (Mary Tang) Date: Wed, 20 Oct 2010 14:33:50 -0700 Subject: Fwd: Spinning Ag Paste? In-Reply-To: <4CBF5274.5010501@stanford.edu> References: <4CBF5274.5010501@stanford.edu> Message-ID: <4CBF603E.5040400@stanford.edu> Can he spin it in the new laurell in the saw room? It doesn't need yellow light. Should be fine there. It comes off with acetone. M Mahnaz Mansourpour wrote: > From his behalf. > > -------- Original Message -------- > Subject: Spinning Ag Paste? > Date: Wed, 20 Oct 2010 12:46:40 -0700 (PDT) > From: Jeffrey M. Weisse > To: mahnaz at snf.stanford.edu, mahnaz at snf.stanford.edu > > > > Hi Mahnaz, > > I am interested in spin coating Ag Paste however, since it is conductive I feel it may be an issue. Is Ag paste allowed in the Headway or any other of SNF's spin coaters? > > Thank you, > > Jeff > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From jsnapp at stanford.edu Sat Oct 23 21:37:55 2010 From: jsnapp at stanford.edu (Justin Snapp) Date: Sat, 23 Oct 2010 21:37:55 -0700 Subject: kapton tape in amt etcher? References: <93CBE14B-AA24-4492-BA46-6899833674C6@stanford.edu> Message-ID: Dear Spec Mat: I want to try to do shadow etching of oxide/nitride to open up bondpad contacts using a silicon wafer as a shadow mask. I am thinking the best tool for this is amt etcher. Has such a thing been done before? Can I use small amounts of exposed kapton tape to hold the shadow mask onto the substrate wafer making sure to keep the kapton tape clear of the metal contact on the backside of the wafer? Of course any other suggestions for shadow etching of 2-3um of nitride/oxide would be welcomed. Thanks in advance! Cheers, Justin From sarioglu at stanford.edu Thu Oct 28 14:42:21 2010 From: sarioglu at stanford.edu (Fatih Sarioglu) Date: Thu, 28 Oct 2010 14:42:21 -0700 Subject: SpecMat Request for sts Message-ID: <4CC9EE3D.7030304@stanford.edu> Dear Sir/Madam, After talking to Jeannie Perez and Nancy Latta, I was asked to submit a request for the following process. I would like to learn if my wafers are acceptable in ksbonder and clean oxidation furnaces after a deposition in sts. I would like to use sts to deposit PECVD nitride film following a decontamination process. Rest of my process involves use of of clean tools such as oxidation furnaces (thermco 1&2) and ksbonder. After these steps, the nitride film will be stripped. Thanks, Fatih