From uthumser at stanford.edu Fri Apr 1 09:29:48 2011 From: uthumser at stanford.edu (Uli Thumser) Date: Fri, 01 Apr 2011 09:29:48 -0700 Subject: GaN? Message-ID: <4D95FD7C.2000700@stanford.edu> Are Gallium Nitride (GaN) wafers allowed at the wbgen? Uli -------------- next part -------------- A non-text attachment was scrubbed... Name: uthumser.vcf Type: text/x-vcard Size: 298 bytes Desc: not available URL: From edmyers at stanford.edu Fri Apr 1 13:43:55 2011 From: edmyers at stanford.edu (Ed Myers) Date: Fri, 01 Apr 2011 13:43:55 -0700 Subject: GaN? In-Reply-To: <4D95FD7C.2000700@stanford.edu> References: <4D95FD7C.2000700@stanford.edu> Message-ID: <6.2.5.6.2.20110401134228.0587ad30@stanford.edu> Uli, GaN is very acceptable material which belongs in the contaminated materials group. Ed At 09:29 AM 4/1/2011, Uli Thumser wrote: >Are Gallium Nitride (GaN) wafers allowed at the wbgen? >Uli > > From mtang at stanford.edu Sat Apr 2 07:49:49 2011 From: mtang at stanford.edu (Mary Tang) Date: Sat, 02 Apr 2011 07:49:49 -0700 Subject: GaN? In-Reply-To: <4D95FD7C.2000700@stanford.edu> References: <4D95FD7C.2000700@stanford.edu> Message-ID: <4D97378D.9080505@stanford.edu> Yes. GaN is a stable material. However, the etch chemistry needs to be considered. Most common GaN wet etchants are standard lab chemicals. However, some chemistries we should not allow, for example, potassium persulfate. So, if someone submits a request to wet etch GaN, make sure they also check with you on the chemicals and procedures. Mary On 4/1/2011 9:29 AM, Uli Thumser wrote: > Are Gallium Nitride (GaN) wafers allowed at the wbgen? > Uli From yanyao at stanford.edu Sat Apr 2 11:57:58 2011 From: yanyao at stanford.edu (Yan Yao) Date: Sat, 2 Apr 2011 11:57:58 -0700 Subject: question of LPCVD dopant concentration Message-ID: Hi all, I have a question about the concentration of doping gas in using Thermocopoly 1 and 2. Understanding this clearly would enable me to select the dopant flow rate correctly. In the case of P620B2H6 recipe with B2H6 5 sccm, what would be SiH4 flow rate? Is SiH4 100% pure or diluted in Ar gas? Is B2H6 diluted is Ar as well? If yes, what the ratio of dilution? Thanks for help! Yan -- Yan Yao, Ph.D Stanford Postdoc Scholar 476 Lomita Mall, McCullough Building Rm.222 Stanford, California 94305 Office: 650-723-7834 Cell: 310-689-9743 Email: yanyao at stanford.edu From zpatel at silexos.com Tue Apr 12 14:50:10 2011 From: zpatel at silexos.com (zpatel at silexos.com) Date: Tue, 12 Apr 2011 14:50:10 -0700 Subject: Request to use tylan4 to form aluminum silicide - max temp 600C Message-ID: <20110412145010.7d5b09db91ee661a40199bea22afa819.b280b57337.wbe@email12.secureserver.net> An HTML attachment was scrubbed... URL: From maurice at stanford.edu Tue Apr 12 16:51:13 2011 From: maurice at stanford.edu (maurice stevens) Date: Tue, 12 Apr 2011 16:51:13 -0700 Subject: Request to use tylan4 to form aluminum silicide - max temp 600C In-Reply-To: <20110412145010.7d5b09db91ee661a40199bea22afa819.b280b57337.wbe@email12.secureserver.net> References: <20110412145010.7d5b09db91ee661a40199bea22afa819.b280b57337.wbe@email12.secureserver.net> Message-ID: <4DA4E571.1080507@stanford.edu> Hi Zubin, Specmat has reviewed and approved your request for: Using tylan4 furnace to form Aluminum Silicide. Depositing 0.5 um Al at SNF on? bare silicon wafers. The wafer will be put into furnace at 575C? - 600C (max) to form silicide. Do not exceed 600c. Inspect the tube before and after your wafers come out and report any issues. happy processing -specmat at snf.stanford.edu On 4/12/2011 2:50 PM, zpatel at silexos.com wrote: > Hello All, > I am resending this email as I am getting failure notice for the email > address SpecMat at snf.stanford.edu > My apologies for people who received multiple emails. > > Thanking you, > Sincerely, > Zubin > > -------- Original Message -------- > Subject: Request to use tylan4 to form aluminum silicide - max temp > 600C > From: "Zubin" > > Date: Tue, April 12, 2011 10:32 am > To: SpecMat at snf.stanford.edu , > "Nancy Latta" >, > "maurice " >, "Zubin " > > > > Hello SpecMat Committee Members, > > I want to request using tylan4 furnace to form Aluminum Silicide. > > The regular silicon process steps currently includes > Depositing 0.5 um Al at SNF on bare silicon wafers. > The wafer will be put into furnace at 575C - 600C (max) to form > silicide. > > > Below mentioned are some available information regarding Al: > > Please let me know if this is possible. > > Thanking you, > Sincerely, > Zubin > > The melting point and vapor pressure at respective temperature is > summarized below > > source 1: Curt J. Lesker, > > Material Melting Point Temperature Vapor pressure > ( C ) ( C ) (torr) > AL 660 677 1.00E-08 > 821 1.00E-06 > 1010 1.00E-04 > > > > Source 2: > http://www.veeco.com/promos/vapor-pressure-curves-of-the-elements.asp > > > > > > > > > -- maurice at stanford.edu Maurice Stevens Stanford Nanofabrication Facility CIS Room 142, Mail Code 4070 Stanford, CA 94305 P. (650)725-3660 F. (650)725.6278 -------------- next part -------------- An HTML attachment was scrubbed... URL: From zpatel at snf.stanford.edu Tue Apr 12 17:13:36 2011 From: zpatel at snf.stanford.edu (Zubin) Date: Tue, 12 Apr 2011 17:13:36 -0700 Subject: Request to use tylan4 to form aluminum silicide - max temp 600C Message-ID: <20110412171336.7d5b09db91ee661a40199bea22afa819.baafdafc2b.wbe@email12.secureserver.net> An HTML attachment was scrubbed... URL: From Farid.Zuberi at grandisinc.com Thu Apr 14 14:51:30 2011 From: Farid.Zuberi at grandisinc.com (Farid Zuberi) Date: Thu, 14 Apr 2011 14:51:30 -0700 Subject: Durimide information Message-ID: Hello All, Me and Kaveh are planing to use Durimide in the future here in SNF. Please review attached MSDS for the material, our process flow will be mainly at Headway to apply resist, Bake, and planarize at Dry tech 4. Your prompt response will be greatly appreciated. Is that okay if we receive Durimide one liter bottle here SNF shipping address? if you guys have any questions or concerns please feel free to contact me or Kaveh. Thank You, Farid Zuberi -------------- next part -------------- A non-text attachment was scrubbed... Name: Durimide MSDS Type: application/octet-stream Size: 62192 bytes Desc: Durimide MSDS URL: From artitw at stanford.edu Mon Apr 18 11:13:23 2011 From: artitw at stanford.edu (Artit Wangperawong) Date: Mon, 18 Apr 2011 11:13:23 -0700 (PDT) Subject: Use of Mo, Cu2S, CdS, ZnS at the SNF Message-ID: <847774369.39795.1303150403097.JavaMail.root@zm03.stanford.edu> Dear SpecMat committee, Please consider my request for using the following materials in the Intevac sputter system. If there is more information that I may provide, please let me know. Thank you. 1. Contact information: Name: Artit Wangperawong Coral login: artitw phone number: 650-352-3739 email address: artitw at stanford.edu PI: Stacey F. Bent 2. Materials: Molybdenum - Mo Copper sulfide - Cu2S Cadmium sulfide - CdS, note that cadmium toxicity is very well known Zinc sulfide - ZnS 3. Vendor/manufacturer info: - Mo, Cu2S, CdS and ZnS are synthesized in Prof. Bent's lab located in building Stauffer III, room 208, Stanford University. 4. Reason for request: These materials are common and necessary for thin-film solar cell research in general. My specific research project is to investigate the use of these materials. I can probably cope without ZnS and Cu2S, but Mo and CdS are crucial. 5. Process Flow: These materials are not to be synthesized inside the SNF. Rather, I just need to bring samples containing these materials into the sputter chamber to deposit tin oxide (SnO2) and ITO (indium-doped tin oxide) on top of them. The Intlvac sputter system is the ONLY tool that these materials will be present in. Si/Mo/Cu2S/CdS/SnO2/ITO would be a typical stack used in thin-film solar cell devices. Another variation is Si/Mo/SnS/CdS/SnO2/ITO 6. Amount and form: How much will you bring in? I would bring in up to 10 1"x1" samples at a time. Is it solid, powder or liquid? It is a solid. Do you need to mix it to use it? No, I do not need to mix it. 7. Storage: Will you be storing your chemical/material at SNF? No. After the ITO is deposited, I will leave the SNF with the materials. 8. Disposal: How will you dispose of any waste or excess chemical or material? Within the SNF, there will be NO DISPOSAL of these materials. Within our own lab at Stauffer III, we abide by Stanford's Environmental Health and Safety guidelines. From mahnaz at stanford.edu Fri Apr 22 11:35:19 2011 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Fri, 22 Apr 2011 11:35:19 -0700 Subject: Durimide information In-Reply-To: References: Message-ID: <4DB1CA67.9090007@stanford.edu> Hello Farid and Kaveh, This is to let you know that your chemical has been okay to be used in the process that Kaveh had send me. Please come and log your chemical in the binder in my office and get the appropriate labels. I have already talked to you about how to transfer it to the lab. mahnaz Here are the tools that will see the durimide: Spinning: Headway Etching 1: Drytek 4 or MRC Ion Milling: Grandis PECVD Oxide: STS Dep Etching 2: Drytek 4 Removal: Drytek 4 w/ O2 plasma Kaveh On 4/14/2011 2:51 PM, Farid Zuberi wrote: > Hello All, > > Me and Kaveh are planing to use Durimide in the future here in SNF. Please review attached MSDS for the material, our process flow will be mainly at Headway to apply resist, Bake, and planarize at Dry tech 4. Your prompt response will be greatly appreciated. Is that okay if we receive Durimide one liter bottle here SNF shipping address? if you guys have any questions or concerns please feel free to contact me or Kaveh. > > > Thank You, > > Farid Zuberi = From mkozina at stanford.edu Wed Apr 27 14:45:03 2011 From: mkozina at stanford.edu (Mike Kozina) Date: Wed, 27 Apr 2011 14:45:03 -0700 (PDT) Subject: New Material ErAs:GaAs In-Reply-To: Message-ID: <1258481797.105164.1303940703582.JavaMail.root@zm06.stanford.edu> Hello, I would like to bring a new material, ErAs:GaAs, into the SNF and am seeking your approval. Personal Information: Name: Michael Kozina Coral login: mkozina Phone Number: 650-926-5382 (work), 209-662-1094 (cell) Email: mkozina at stanford.edu PI: David Reis, Department of Applied Physics/PULSE (SLAC) Chemical: This is GaAs with a thin (1.8micron) layer on top of ErAs islands interspersed in GaAs. I do not have an MSDS for this material (it is a new material developed by a collaborator). I am not sure of the specific Storage Group Identifier that would be most appropriate, but it seems that what works for GaAs should also work for this. Moreover, the same hazards that apply to GaAs apply to this material. The material was made by Art Gossard's group in the Materials Science Department at UC Santa Barbara. Website: http://engineering.ucsb.edu/faculty/profile/169 Phone: 805 893-2686 Reason for Request: We are studying various properties of this specific material, and we want to be able to put a certain pattern of gold on it. We don't have the facilities ourselves, and want to use the nanofab lab. There is no new procedure involved here per se--we're just going to use photolithography and sputtering to partially cover 4x4mm pieces of ErAs:GaAs. Process Flow (note I don't plan on using equipment that are solely "clean"--ie everything will be at the gold-contaminated level): 1. Prime with HMDS in YES oven. 2. Spin on LOL with the headway. 3. Bake on LOL in Blue-M oven. 4. Spin on photoresist with headway. 5. Bake on photoresist. 6. Expose using Karl Suss 7. Develop at wbmiscres. 8. Metallize with metallica. Amount and Form: I will bring in at most 1/4 of a 2" wafer of material. It is in solid form, divided into 4x4mm pieces. Storage: I don't plan to store this material at the SNF. Disposal: I will dispose of any sort of waste as I would for GaAs (using the appropriate As waste bins). Attached are three publications that detail how this material is made. Thanks, Mike Kozina -------------- next part -------------- A non-text attachment was scrubbed... Name: Kadow00.pdf Type: application/pdf Size: 349209 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Kadow99a.pdf Type: application/pdf Size: 1677161 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: kadow99b.pdf Type: application/pdf Size: 114461 bytes Desc: not available URL: From mtang at stanford.edu Wed Apr 27 19:05:28 2011 From: mtang at stanford.edu (Mary Tang) Date: Wed, 27 Apr 2011 19:05:28 -0700 Subject: New Material ErAs:GaAs In-Reply-To: <1258481797.105164.1303940703582.JavaMail.root@zm06.stanford.edu> References: <1258481797.105164.1303940703582.JavaMail.root@zm06.stanford.edu> Message-ID: <4DB8CB68.8070008@stanford.edu> Hi all -- On the face of it, this should be OK because there's no high temp processing or etching. However, I've got a few questions: 1. GaAs ought to be OK, but I'm not familiar with ErAs. Will the temperatures for vacuum prime and LOL bake be compatible with this film? I'm assuming the film is chemically compatible with developer (<2% TMAH)? And acetone (is there a lift-off we're missing)? I think that as long as this film is stable under these conditions and not incompatible with the chemicals it will come into contact with, it should be OK. 2. Pieces are teeny -- smaller, I think, than the smallest chuck. He should make sure to check with the litho folks about proper procedures for handling small pieces on the headway (maybe even the karlsuss too.) 3. Baking of LOL does not need to be in the BlueM oven and is most often done on a hot plate. Mahnaz might have some inputs about the litho. But I would suggest a quick confirmation from the collaborator about the chemical compatibility with the chemicals to be used would satisfy my paranoia. I don't think the small quantity would pose any problem, but if we open the door to ErAs, it would be good to have additional info. A google search turn up American Elements which supplies bulk ErAs and mentions an MSDS -- think we should ask him to get this? Mary On 4/27/2011 2:45 PM, Mike Kozina wrote: > Hello, > > I would like to bring a new material, ErAs:GaAs, into the SNF and am seeking your approval. > > Personal Information: > > Name: Michael Kozina > Coral login: mkozina > Phone Number: 650-926-5382 (work), 209-662-1094 (cell) > Email: mkozina at stanford.edu > PI: David Reis, Department of Applied Physics/PULSE (SLAC) > > Chemical: > > This is GaAs with a thin (1.8micron) layer on top of ErAs islands interspersed in GaAs. I do not have an MSDS for this material (it is a new material developed by a collaborator). I am not sure of the specific Storage Group Identifier that would be most appropriate, but it seems that what works for GaAs should also work for this. Moreover, the same hazards that apply to GaAs apply to this material. > > The material was made by Art Gossard's group in the Materials Science Department at UC Santa Barbara. > Website: http://engineering.ucsb.edu/faculty/profile/169 > Phone: 805 893-2686 > > Reason for Request: We are studying various properties of this specific material, and we want to be able to put a certain pattern of gold on it. We don't have the facilities ourselves, and want to use the nanofab lab. There is no new procedure involved here per se--we're just going to use photolithography and sputtering to partially cover 4x4mm pieces of ErAs:GaAs. > > Process Flow (note I don't plan on using equipment that are solely "clean"--ie everything will be at the gold-contaminated level): > > 1. Prime with HMDS in YES oven. > 2. Spin on LOL with the headway. > 3. Bake on LOL in Blue-M oven. > 4. Spin on photoresist with headway. > 5. Bake on photoresist. > 6. Expose using Karl Suss > 7. Develop at wbmiscres. > 8. Metallize with metallica. > > Amount and Form: > > I will bring in at most 1/4 of a 2" wafer of material. It is in solid form, divided into 4x4mm pieces. > > Storage: > > I don't plan to store this material at the SNF. > > Disposal: > > I will dispose of any sort of waste as I would for GaAs (using the appropriate As waste bins). > > Attached are three publications that detail how this material is made. > > Thanks, > Mike Kozina > > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility Paul G. Allen Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu