From wslee at stanford.edu  Tue Aug  2 08:17:07 2011
From: wslee at stanford.edu (Scott Lee)
Date: Tue, 2 Aug 2011 08:17:07 -0700
Subject: Glycerin use at wbgeneral
In-Reply-To: <CAC8qUHDTxKvzOyNOkYY2m_OBfpWMDCPsmroixvYH6vuufE_mvg@mail.gmail.com>
References: <CAC8qUHDTxKvzOyNOkYY2m_OBfpWMDCPsmroixvYH6vuufE_mvg@mail.gmail.com>
Message-ID: <CAC8qUHBmZLoksX9YRqHzYcCtd9+a1UgjpNx-gFsQw5vO8FpktA@mail.gmail.com>

Hi specmat,

Any response on my proposal to use glycerin at wbgeneral?  I talked to Uli
and it seems like the main concern is whether I can dispose of the
glycerin/BOE solution in the HF drain or if it needs to be disposed of in
the hazardous waste in the acid storage cabinet.  Feedback would be greatly
appreciated.

Thanks,
Scott

On Tue, Jul 26, 2011 at 12:03 PM, Scott Lee <wslee at stanford.edu> wrote:

> Hi all,
>
> I wasn't sure who to send this to so I decided to send it to the safety and
> specmat mailing lists.
>
> I am working with a collaborator in Illinois on hafnium diboride (HfB2) as
> a hard, conductive material.  I need to selectively etch SiO2 without
> etching the HfB2.  My collaborator says his group has had success using a
> 5:3 BOE:glycerin solution where the BOE is 7:1 40%NH4F:49% HF.
>
> I would like to use this solution at wbgeneral since I will be working with
> HF and I need to go to CPD afterwards.  Since glycerin is an alcohol (which
> is not normally permitted at wbgeneral), I wanted to make sure it is okay to
> use.  Let me know if you have any concerns.  I attached the link to the MSDS
> sheet below.
>
> Thanks,
> Scott
>
> http://www.sciencelab.com/msds.php?msdsId=9927350
>
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From wslee at stanford.edu  Tue Aug  2 11:13:53 2011
From: wslee at stanford.edu (Scott Lee)
Date: Tue, 2 Aug 2011 11:13:53 -0700
Subject: Glycerin use at wbgeneral
In-Reply-To: <CAC8qUHBmZLoksX9YRqHzYcCtd9+a1UgjpNx-gFsQw5vO8FpktA@mail.gmail.com>
References: <CAC8qUHDTxKvzOyNOkYY2m_OBfpWMDCPsmroixvYH6vuufE_mvg@mail.gmail.com>
 <CAC8qUHBmZLoksX9YRqHzYcCtd9+a1UgjpNx-gFsQw5vO8FpktA@mail.gmail.com>
Message-ID: <CAC8qUHBM1WTfg3vcZM1q2k+es2YoqDmFLSMphE+znmYsX3Kwyg@mail.gmail.com>

Hi all,

I talked to Mahnaz who wanted more process specifics and details about
glycerin.  I will be etching pieces at wbgeneral.  As stated earlier, I will
use a 5:3 BOE:glycerin mixture.  Since I will be working with pieces, the
quantity of the solution will be small (~500mL every 2 weeks).  The mixture
will be used at room temperature.  Teflon and plastic beakers will be used.
The waste will be specially collected as per hazardous waste protocol and
not be drained down the HF drain.

The MSDS (link attached below) says that it may explode on contact with
chromium trioxide, potassium chlorate, and potassium permanganate.  It also
says to avoid contact with sulfuric and nitric acids (leads to explosive
glyceryl nitrate).  Uli recommended reserving and enabling both sides of
wbgeneral.  The recommendation seems good to me to ensure that no one is
using sulfuric acid or nitric acid in the near vicinity.  Other than that,
it's boiling point is 290C and flashpoint is 177C.

According to wikipedia, glycerin is found in a wide variety of products
including diet foods, laxatives, and cough syrup.

Let me know if any other information would be of interest.

Cheers,
Scott

MSDS
http://www.sciencelab.com/msds.php?msdsId=9927350

Wikipedia
http://en.wikipedia.org/wiki/Glycerin





On Tue, Aug 2, 2011 at 8:17 AM, Scott Lee <wslee at stanford.edu> wrote:

> Hi specmat,
>
> Any response on my proposal to use glycerin at wbgeneral?  I talked to Uli
> and it seems like the main concern is whether I can dispose of the
> glycerin/BOE solution in the HF drain or if it needs to be disposed of in
> the hazardous waste in the acid storage cabinet.  Feedback would be greatly
> appreciated.
>
> Thanks,
> Scott
>
>
> On Tue, Jul 26, 2011 at 12:03 PM, Scott Lee <wslee at stanford.edu> wrote:
>
>> Hi all,
>>
>> I wasn't sure who to send this to so I decided to send it to the safety
>> and specmat mailing lists.
>>
>> I am working with a collaborator in Illinois on hafnium diboride (HfB2) as
>> a hard, conductive material.  I need to selectively etch SiO2 without
>> etching the HfB2.  My collaborator says his group has had success using a
>> 5:3 BOE:glycerin solution where the BOE is 7:1 40%NH4F:49% HF.
>>
>> I would like to use this solution at wbgeneral since I will be working
>> with HF and I need to go to CPD afterwards.  Since glycerin is an alcohol
>> (which is not normally permitted at wbgeneral), I wanted to make sure it is
>> okay to use.  Let me know if you have any concerns.  I attached the link to
>> the MSDS sheet below.
>>
>> Thanks,
>> Scott
>>
>> http://www.sciencelab.com/msds.php?msdsId=9927350
>>
>
>
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From mahnaz at stanford.edu  Tue Aug  2 15:22:31 2011
From: mahnaz at stanford.edu (Mahnaz Mansourpour)
Date: Tue, 02 Aug 2011 15:22:31 -0700
Subject: Glycerin use at wbgeneral
In-Reply-To: <CAC8qUHBM1WTfg3vcZM1q2k+es2YoqDmFLSMphE+znmYsX3Kwyg@mail.gmail.com>
References: <CAC8qUHDTxKvzOyNOkYY2m_OBfpWMDCPsmroixvYH6vuufE_mvg@mail.gmail.com> <CAC8qUHBmZLoksX9YRqHzYcCtd9+a1UgjpNx-gFsQw5vO8FpktA@mail.gmail.com> <CAC8qUHBM1WTfg3vcZM1q2k+es2YoqDmFLSMphE+znmYsX3Kwyg@mail.gmail.com>
Message-ID: <4E3878A7.6010908@stanford.edu>

Hi Scott,

Your request has been approved, with the following:

To bring your chemical in the lab, First make sure to obtain a yellow 
label and log the chemical on the logsheet in my office.

Secondly:
Place your chemical in the top shelf (for personal chemicals) in the 
chemicals pass-through, from the hall way  (ask a Staff member to open it).
You can access the chemical from inside the lab when you go inside.

As you mentioned, there were only be small amount of the chemical at the 
time of processing.
The mixture to be used at room temperature.
The waste should be collected and labeled with all the appropriate 
information.
As Uli has suggested,   the bench ( wbgeneral)  be reserved on both side 
when you are working.

Let me know if you have any questions.

mahnaz





On 8/2/2011 11:13 AM, Scott Lee wrote:
> Hi all,
>
> I talked to Mahnaz who wanted more process specifics and details about 
> glycerin.  I will be etching pieces at wbgeneral.  As stated earlier, 
> I will use a 5:3 BOE:glycerin mixture.  Since I will be working with 
> pieces, the quantity of the solution will be small (~500mL every 2 
> weeks).  The mixture will be used at room temperature.  Teflon and 
> plastic beakers will be used.  The waste will be specially collected 
> as per hazardous waste protocol and not be drained down the HF drain.
>
> The MSDS (link attached below) says that it may explode on contact 
> with chromium trioxide, potassium chlorate, and potassium 
> permanganate.  It also says to avoid contact with sulfuric and nitric 
> acids (leads to explosive glyceryl nitrate).  Uli recommended 
> reserving and enabling both sides of wbgeneral.  The recommendation 
> seems good to me to ensure that no one is using sulfuric acid or 
> nitric acid in the near vicinity.  Other than that, it's boiling point 
> is 290C and flashpoint is 177C.
>
> According to wikipedia, glycerin is found in a wide variety of 
> products including diet foods, laxatives, and cough syrup.
>
> Let me know if any other information would be of interest.
>
> Cheers,
> Scott
>
> MSDS
> http://www.sciencelab.com/msds.php?msdsId=9927350
>
> Wikipedia
> http://en.wikipedia.org/wiki/Glycerin
>
>
>
>
>
> On Tue, Aug 2, 2011 at 8:17 AM, Scott Lee <wslee at stanford.edu 
> <mailto:wslee at stanford.edu>> wrote:
>
>     Hi specmat,
>
>     Any response on my proposal to use glycerin at wbgeneral?  I
>     talked to Uli and it seems like the main concern is whether I can
>     dispose of the glycerin/BOE solution in the HF drain or if it
>     needs to be disposed of in the hazardous waste in the acid storage
>     cabinet.  Feedback would be greatly appreciated.
>
>     Thanks,
>     Scott
>
>
>     On Tue, Jul 26, 2011 at 12:03 PM, Scott Lee <wslee at stanford.edu
>     <mailto:wslee at stanford.edu>> wrote:
>
>         Hi all,
>
>         I wasn't sure who to send this to so I decided to send it to
>         the safety and specmat mailing lists.
>
>         I am working with a collaborator in Illinois on hafnium
>         diboride (HfB2) as a hard, conductive material.  I need to
>         selectively etch SiO2 without etching the HfB2.  My
>         collaborator says his group has had success using a 5:3
>         BOE:glycerin solution where the BOE is 7:1 40%NH4F:49% HF.
>
>         I would like to use this solution at wbgeneral since I will be
>         working with HF and I need to go to CPD afterwards.  Since
>         glycerin is an alcohol (which is not normally permitted at
>         wbgeneral), I wanted to make sure it is okay to use.  Let me
>         know if you have any concerns.  I attached the link to the
>         MSDS sheet below.
>
>         Thanks,
>         Scott
>
>         http://www.sciencelab.com/msds.php?msdsId=9927350
>
>
>
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From lelewang at stanford.edu  Thu Aug  4 19:37:27 2011
From: lelewang at stanford.edu (Lele Wang)
Date: Thu, 4 Aug 2011 19:37:27 -0700 (PDT)
Subject: Quest for processing in P5000
In-Reply-To: <81825557.69546.1310534957910.JavaMail.root@zm01.stanford.edu>
Message-ID: <868590384.435923.1312511847737.JavaMail.root@zm01.stanford.edu>

Dear Committee,
I sent this email earlier but without reply. I tried other tools but it did not work so I am stuck on this step for 1 month.

My wafer is in the contaminated group with Pt metal lines on top. I need to do a directional oxide etch at the bottom of the trench in P5000 and the wafer will be well protected by 1.6um photoresist on top. The opening area is a 30um deep, 5um wide silicon trench having thermal oxide on sidewall and bottom, which is clean. The bottom oxide to be etched is 800nm. Is that ok to etch this in p5000? Please reply ASAP. Thanks a lot.



Best,
Lele Wang
Department of Electrical Engineering


From mtang at stanford.edu  Thu Aug  4 21:02:03 2011
From: mtang at stanford.edu (Mary Tang)
Date: Thu, 04 Aug 2011 21:02:03 -0700
Subject: Quest for processing in P5000
In-Reply-To: <868590384.435923.1312511847737.JavaMail.root@zm01.stanford.edu>
References: <868590384.435923.1312511847737.JavaMail.root@zm01.stanford.edu>
Message-ID: <4E3B6B3B.9010702@stanford.edu>

Hi all --

I would suggest that this is OK to process in p5000etch ChB because Pt 
is not exposed to plasma and Pt is considered a "semiclean B" material 
if it were deposited in a MOS-compatible backend system.   If this was 
deposited in innotec or metalica,  it is technically "contaminated."  
However, contamination of the etch chamber via sputtering under these 
conditions is not very likely.  That said, contamination of the PRS1000 
bath when cleaning the resist in wbmetal could present risk 
contamination, so I'd suggest for this case, that cleans be manually 
done at wbgeneral (after matrix ashing.)

Any comments or concerns about this approach?

Mary


On 8/4/2011 7:37 PM, Lele Wang wrote:
> Dear Committee,
> I sent this email earlier but without reply. I tried other tools but it did not work so I am stuck on this step for 1 month.
>
> My wafer is in the contaminated group with Pt metal lines on top. I need to do a directional oxide etch at the bottom of the trench in P5000 and the wafer will be well protected by 1.6um photoresist on top. The opening area is a 30um deep, 5um wide silicon trench having thermal oxide on sidewall and bottom, which is clean. The bottom oxide to be etched is 800nm. Is that ok to etch this in p5000? Please reply ASAP. Thanks a lot.
>
>
>
> Best,
> Lele Wang
> Department of Electrical Engineering



From mtang at stanford.edu  Sat Aug 13 08:45:39 2011
From: mtang at stanford.edu (Mary Tang)
Date: Sat, 13 Aug 2011 08:45:39 -0700
Subject: Fwd: Re: XR1541 ebeam resist (SOG) for bonding experiment
Message-ID: <4E469C23.4060205@stanford.edu>

Hi all --

I don't recall a request for SOG in the tylan oxidation furnaces from 
Jae, but it would appear he's doing this.  It's not disastrous, I 
suppose, but it brings up some questions about our policy.

We've relied for a long time on the Gold/semiclean/clean designation 
system which is awfully handy, but as we know, simplistic.  It's overly 
conservative for some processes (etchers) and sometimes not enough for 
others (furnaces, wet benches).

I wonder if we should also incorporate some aspects of the semiconductor 
fab convention distinguishing front end and back end processing.  The 
SOG is a case in point.  It's originally designed to be a back-end 
material, so is clean enough for back-end and cured to withstand backend 
temperatures.  But if it's used as a bonding material, it will be going 
into high-temp  front-end tools, like the oxidation furnaces.  It's 
normally cured at 400 C - but going into a furnace at 900 C, the film 
will continue to change.  And I really think that it should not go into 
Epi (not that this has come up, but no doubt it will.)  So, I think 
there's a case to be be made for defining different levels of "clean" -- 
without getting too convoluted.

Also, for this specific case, HSQ for ebeam resist strikes me as being 
different from SOG designed to be interlevel dielectric.  It's designed 
to be removable hard mask, so I'm not sure it's metal-free.  Also, got a 
lot of covalently-bound organics in it whereas I think that classic 
SOG's do not -- which suggests that high temperature curing will result 
in different by-products.

Maurice and I will follow up with J and Jae for more info.  But I 
thought this might be a good illustration of an area where our 
contamination policy isn't sufficient.  There's a lot of SOG work going 
on and it seems to be increasing.

Mary


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Hi J --

Jae's Specmat process request from April had nothing to do with SOG, 
just W from Sandia.  So, we're still trying to figure out how we got 
from W to SOG-coated innotec-deposited metal in wet benches where metal 
films/non-silicides are prohibited.  But your question brings up some 
good questions about our cleanliness policy.

Spin-on-glasses for electronics applications are certified electronics 
grade -- I'm not sure HSQ's for resist applications are.  Would you 
happen to have an elemental analysis for this stuff?  If it can be 
considered electronics grade (i.e., metal ion free), then it's 
considered clean by our current lab standards.

M

On 8/13/2011 7:12 AM, J Provine wrote:
> hi mary and maurice,
> due to some recent confusion i wanted to double check with you about a 
> procedure using the XR1541 ebeam resist (a type of SOG) for a high 
> temperature bond.  i want to spin XR1541 onto clean wafers (Si and 
> SiO2 covered) and bond with pressure from a weight in litho.  the 
> weight i'll cover in fresh foil and i'll use another clean wafer 
> between my process wafers and weight.  this will be baked with 
> pressure up to 400C for several hours on a hot plate.  then i would 
> anneal the wafers in tylan1 or tylan2 with the recipe slow900a that 
> maurice set up with jae lee.  but before going into tylan1/2 i would 
> do a diffusion clean.
>
> the question is, is it ok to diffusion clean and introduce the wafers 
> into tylan1/2 with the XR1541 after the 400C bake?
>
> thank you,
>
> j


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From mtang at stanford.edu  Mon Aug 15 14:34:04 2011
From: mtang at stanford.edu (Mary Tang)
Date: Mon, 15 Aug 2011 14:34:04 -0700
Subject: Fwd: XR1541 bonding
Message-ID: <4E4990CC.3080106@stanford.edu>

Hi all --

Here's a request from J Provine, relating to a process that Jae Hyung 
Lee has apparently been running in the lab.

The questions are:

1.  Is electronics grade HSQ, cured at 400 C, sufficiently clean to be 
processed in wbdiff?

2.  Is it sufficiently clean to be processed in tylans 1/2?

We've approved electronics grade SOG for processing in back-end/low 
temperature tools through SpecMat.  I don't believe we've officially 
approved it for clean/front-end tools.  Should we?

My humble opinion:  Wbdiff is OK -- it's as clean as the chemicals used 
and chemicals will get changed @ 4 hours.  Tylans 1/2 are OK if the 
process has been vetted in tylan3/4.  My concern is wafers debonding and 
flaking stuff everywhere.  However, I suspect that Jae has already been 
doing this and tested the process, if he's got a special slow recipe.

Mary



-------- Original Message --------
Subject: 	XR1541 bonding
Date: 	Mon, 15 Aug 2011 14:16:57 -0700
From: 	J Provine <jprovine at stanford.edu>
To: 	Ed Myers <edmyers at stanford.edu>, Mary Tang <mtang at stanford.edu>, 
maurice stevens <maurice at stanford.edu>



hi mary, maurice, and ed,

i've had a chance to talk with mary and ed about using the HSQ based 
ebeam resist XR1541 (a type of spin on glass) to do a moderately high 
temperature bonding of two oxidized wafers.  i'll talk with maurice when 
he returns on wednesday.  this email is to get everyone the same page 
and document the proposal for what i would do.

i would start with two clean oxidized SOI, that have been through clean 
CMP and then decontamination.
1. spin XR1541 (about 150nm) at headway.
2. bake on hot plate at 90C (2 min) -> 150C (2 min) -> 400C (2 hours) 
with weight applied by the litho weights covered in clean new foil and 
the hotplate covered in new foil.
3. clean bonded wafers in wbdiff
4. anneal at 900C for 2-3 hours in tylan1/2 using the recipe slow900a

for step 3 i could go to another, less clean bench if needed, such as 
wbnonmetal.
for step 4 i could go to tylan3/4 if needed for my process, but i would 
like to stay clean and only go contaminated if necessary.

is this ok?  what additional information can i provide to help in the 
decision.

attached is a document about XR1541 and its cleanliness.
j
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From edmyers at stanford.edu  Mon Aug 15 14:59:19 2011
From: edmyers at stanford.edu (Ed Myers)
Date: Mon, 15 Aug 2011 14:59:19 -0700
Subject: Fwd: XR1541 bonding
In-Reply-To: <4E4990CC.3080106@stanford.edu>
References: <4E4990CC.3080106@stanford.edu>
Message-ID: <6.2.5.6.2.20110815145634.05d6be10@stanford.edu>

All,

I am concerned with the statement in the Dow document which says 
Resists are comprised of hydrogen silsesquioxane(HSQ) resin.  This 
makes it sound like an organic film, which may not be stable in the 
diffusion clean.  I do not have any experience with the material, so 
I can not make a sound recommendation.

Ed


At 02:34 PM 8/15/2011, Mary Tang wrote:
>Hi all --
>
>Here's a request from J Provine, relating to a process that Jae 
>Hyung Lee has apparently been running in the lab.
>
>The questions are:
>
>1.  Is electronics grade HSQ, cured at 400 C, sufficiently clean to 
>be processed in wbdiff?
>
>2.  Is it sufficiently clean to be processed in tylans 1/2?
>
>We've approved electronics grade SOG for processing in back-end/low 
>temperature tools through SpecMat.  I don't believe we've officially 
>approved it for clean/front-end tools.  Should we?
>
>My humble opinion:  Wbdiff is OK -- it's as clean as the chemicals 
>used and chemicals will get changed @ 4 hours.  Tylans 1/2 are OK if 
>the process has been vetted in tylan3/4.  My concern is wafers 
>debonding and flaking stuff everywhere.  However, I suspect that Jae 
>has already been doing this and tested the process, if he's got a 
>special slow recipe.
>
>Mary
>
>
>
>-------- Original Message --------
>Subject: XR1541 bonding
>Date: Mon, 15 Aug 2011 14:16:57 -0700
>From: J Provine <mailto:jprovine at stanford.edu><jprovine at stanford.edu>
>To: Ed Myers <mailto:edmyers at stanford.edu><edmyers at stanford.edu>, 
>Mary Tang <mailto:mtang at stanford.edu><mtang at stanford.edu>, maurice 
>stevens <mailto:maurice at stanford.edu><maurice at stanford.edu>
>
>
>hi mary, maurice, and ed,
>
>i've had a chance to talk with mary and ed about using the HSQ based 
>ebeam resist XR1541 (a type of spin on glass) to do a moderately 
>high temperature bonding of two oxidized wafers.  i'll talk with 
>maurice when he returns on wednesday.  this email is to get everyone 
>the same page and document the proposal for what i would do.
>
>i would start with two clean oxidized SOI, that have been through 
>clean CMP and then decontamination.
>1. spin XR1541 (about 150nm) at headway.
>2. bake on hot plate at 90C (2 min) -> 150C (2 min) -> 400C (2 
>hours) with weight applied by the litho weights covered in clean new 
>foil and the hotplate covered in new foil.
>3. clean bonded wafers in wbdiff
>4. anneal at 900C for 2-3 hours in tylan1/2 using the recipe slow900a
>
>for step 3 i could go to another, less clean bench if needed, such 
>as wbnonmetal.
>for step 4 i could go to tylan3/4 if needed for my process, but i 
>would like to stay clean and only go contaminated if necessary.
>
>is this ok?  what additional information can i provide to help in 
>the decision.
>
>attached is a document about XR1541 and its cleanliness.
>j




From jimkruger at yahoo.com  Wed Aug 24 15:17:44 2011
From: jimkruger at yahoo.com (jim kruger)
Date: Wed, 24 Aug 2011 15:17:44 -0700 (PDT)
Subject: SpecMat request:  AZ negative resist
Message-ID: <1314224264.42724.YahooMailNeo@web38906.mail.mud.yahoo.com>

SpecMat request  8-24-11

jimkruger at snf.stanford.edu

customer:  NthDegree Tech Worldwide

Material:  AZ nLof 2070  negative
photoresist.
Perhaps other viscosities later.

Supplier:  Capital Scientific 
capitalscientific.com
Mfg.:  Clariant AZ
Quantity:  1 quart 


Storage:  Group L,  with other personal
photoresists.

I choose this negative resist because
of its compatibility with our standard resists:  same TMAH developer,
spinner cup compatibility, etc.

It remains acetone soluble until BOTH
i-line exposure and 110 C bake so clean up is not an issue.

Equipment:
spin:  Headway or Laurell
bake:  litho hot plate or ovens
develop:  SVG track or hand develop,
MF 26A
Metal dep:  Innotec or send out. 
Ni/Al
Lift-off:  Wbsolvent, acetone or
1165, IPA rinse

Inspect:  optical or SEM.

Lift-off in acetone should work because
the resist  ?anti-bleaches? and crosslinks only at the surface
(~1 or so um), the bulk remaining TMAH soluble for undercut profile
and later, acetone soluble for lift-off.
1165 can be used for a more aggressive
liftoff, attacking even the exposed material if hot.

Attached:  MSDS, AZ data sheet, process
info from microchemicals.com


I have discussed this with Mahnaz.

Thanks,

jim
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From mtang at stanford.edu  Thu Aug 25 12:45:24 2011
From: mtang at stanford.edu (Mary Tang)
Date: Thu, 25 Aug 2011 12:45:24 -0700
Subject: Question on nickel etchant
In-Reply-To: <961556449.1504865.1314299807034.JavaMail.root@zm09.stanford.edu>
References: <961556449.1504865.1314299807034.JavaMail.root@zm09.stanford.edu>
Message-ID: <4E56A654.8040405@stanford.edu>

Hi Daesung --

This has already been approved for use at wbgeneral and wbgaas.  There 
are two labmembers who have gallon bottles in the lab.  Rather than 
order a new bottle, I would suggest getting in contact with them about 
possibly borrowing or sharing. The people who have this are Gavin Zhu 
(Coral ID = tzhu) and Kaveh Milaninia (kavehm).

Make sure to read the MSDS.  Used etchant and first rinses must be 
collected locally, in labeled waste containers.   Make sure to use 
non-plastic, non-metal containers/beakers (glass or teflon are OK)  for 
holding the etchant and the waste (it's nitric acid-based which will 
oxidize plastics and etch metals.)

If you are heating, make sure to review the station procedures for hot 
plate use.

If you anticipate using a lot of it, then you might want to order your 
own --   If you decide to get your own bottle, there are more procedures 
to follow (standard personal chemical protocols) -- let us know if you 
do so we can remind you.

Mary


On 8/25/2011 12:16 PM, Daesung Lee wrote:
> Hi Mary,
>
> I have a quick question. I have a need to use Nickel Etchant TFB in my process in SNF where nickel is used as a sacrificial layer. This etchant is shown to be a good etchant which does not etch most of materials that I want to protect: Oxide, Au, Cr
>
> Would you evaluate whether I can bring it with me to SNF? It would be really helpful for me to work with this etchant.
>
> Please see the attached MSDS and the link http://www.transene.com/ni_etchant.html
>
> Thanks.
> Daesung


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu

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From daesung at stanford.edu  Thu Aug 25 15:49:28 2011
From: daesung at stanford.edu (Daesung Lee)
Date: Thu, 25 Aug 2011 15:49:28 -0700 (PDT)
Subject: Question on nickel etchant
In-Reply-To: <4E56A654.8040405@stanford.edu>
Message-ID: <413322171.1517730.1314312568198.JavaMail.root@zm09.stanford.edu>

Hi Mary,

Thanks for the information. It's good to hear that there are two labmembers using the etchant. I'll first contact them about possibly borrowing or sharing and get used to using the etchant with precautions and instructions. I anticipate to use the etchant frequently if it turns out to be a good etchant I can rely on. If so, when I order a new bottle, I'll contact you about procedures to follow (standard personal chemical protocols)

Thanks.
Daesung

----- ?? ??? -----
?? ??: "Mary Tang" <mtang at stanford.edu>
?? ??: "Daesung Lee" <daesung at stanford.edu>
??: specmat at snf.stanford.edu, "Mahnaz Mansourpour" <mahnaz at stanford.edu>
?? ??: 2011? 8? 25?, ??? ?? 12:45:24
??: Re: Question on nickel etchant

Hi Daesung --

This has already been approved for use at wbgeneral and wbgaas.  There 
are two labmembers who have gallon bottles in the lab.  Rather than 
order a new bottle, I would suggest getting in contact with them about 
possibly borrowing or sharing. The people who have this are Gavin Zhu 
(Coral ID = tzhu) and Kaveh Milaninia (kavehm).

Make sure to read the MSDS.  Used etchant and first rinses must be 
collected locally, in labeled waste containers.   Make sure to use 
non-plastic, non-metal containers/beakers (glass or teflon are OK)  for 
holding the etchant and the waste (it's nitric acid-based which will 
oxidize plastics and etch metals.)

If you are heating, make sure to review the station procedures for hot 
plate use.

If you anticipate using a lot of it, then you might want to order your 
own --   If you decide to get your own bottle, there are more procedures 
to follow (standard personal chemical protocols) -- let us know if you 
do so we can remind you.

Mary


On 8/25/2011 12:16 PM, Daesung Lee wrote:
> Hi Mary,
>
> I have a quick question. I have a need to use Nickel Etchant TFB in my process in SNF where nickel is used as a sacrificial layer. This etchant is shown to be a good etchant which does not etch most of materials that I want to protect: Oxide, Au, Cr
>
> Would you evaluate whether I can bring it with me to SNF? It would be really helpful for me to work with this etchant.
>
> Please see the attached MSDS and the link http://www.transene.com/ni_etchant.html
>
> Thanks.
> Daesung


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu



From mark.dante at thinsilicon.com  Tue Aug 30 16:20:55 2011
From: mark.dante at thinsilicon.com (Mark Dante)
Date: Tue, 30 Aug 2011 16:20:55 -0700
Subject: new materials
Message-ID: <CAOsHdoo0HtGiUvSi-onJqMK3aGyRd7ZLEmn41GeJt-3xVzT+0A@mail.gmail.com>

Hello,

I'd like to submit the following substrate and silica nanoparticle solution
for use in the SNF. Please let me know if I need to provide you with any
other information. Thanks so much.

Mark Dante, Ph.D.
Scientist/Project Manager
ThinSilicon Corporation
1400 N. Shoreline Blvd, Suite B-3
Mountain View, CA 94043
(515) 451-1392
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