From mahnaz at stanford.edu  Wed Jul  6 07:56:20 2011
From: mahnaz at stanford.edu (Mahnaz Mansourpour)
Date: Wed, 06 Jul 2011 07:56:20 -0700
Subject: Fwd: Request for new materials allowed in the clean room
Message-ID: <4E147794.8000406@stanford.edu>



-------- Original Message --------
Subject: 	Request for new materials allowed in the clean room
Date: 	Tue, 5 Jul 2011 17:50:23 -0700 (PDT)
From: 	Champ Phuthong <phuthong at stanford.edu>
To: 	mahnaz at snf.stanford.edu



Dear Mahnaz,

My name is Champ Phuthong, an MSE student in Lindenberg's group. As my special material request to SpecMat at snf.stanford.edu was bounced, I forward the request to you, according to Maureen.
I would like to request your permission for my samples to be measured the resistance/resistivity in the clean room. According to the procedures, I have provided the following information:

1. Contact Information: Frank Chen, Coral login =fc3, Phone Number = 5053104738, email = fc3 at stanford.edu,
Champ Phuthong, Coral login (soon), Phone Number = 6507967475, email = phuthong at stanford.edu
our PI = Aaron Lindenberg.

Frank Chen is my group member and an SNF lab member, he will be trained for the 4-point probe measurement.
I myself will apply for the SNF labmember and will be trained too.

2. The specification of materials: 0.1 wt% Nb-doped SrTiO3
Common name= -
Trade name = Niobium-doped Strontium Titanate
CAS Number = 1206-05-9 (that of Strontium Titanate)
Attached is the materials' MSDS (The manufacturing company tells me that MSDS for Nb:SrTiO3 can be replaced by that for SrTiO3)
The Storage Group Identifier = G Non-Reactive Materials and Non-Hazardous Materials
Main Hazardous Class = 11. Non Hazardous
I categorized this according to my knowledge from MSDS attached, please correct me if you find any incorrect part.

3. Vendor/Manufacturer info: MTI Corporation (Materials Tech. Intl.) 860 South 19th Street
Richmond, CA 94804, USA Tel: 510-525-3070, http://www.mtixtl.com/

4. Reason for request: It is the sample for photoanode of the photoelectrochemical cells. I would like to measure the sample's resistance/resistivity to check if I need to anneal it in order to make it so conductive that it works for my experiment. The company suggests that I use the 4-point probing.

5. Process Flow: Frank and I will measure the sample's resistance/resistivity using the 4-point probe machine.

6. Amount and form: 1 substrate at a time for testing, after annealing (if needed) to increase conductivity.

7. Storage: I will not store the sample at SNF.

8. Disposal: According to number 5., we will not dispose any waste or excess of the material.

Also, we have a few samples coming for testing in 2-3 weeks. I am looking forward to your reply. If you have any question or concern or there are some parts that I fill wrong, please let me know.

Your sincerely,
Champ Phuthong



-------------- next part --------------
An HTML attachment was scrubbed...
URL: <http://snf.stanford.edu/pipermail/specmat/attachments/20110706/f605fdd1/attachment.html>

From charles.w.holzwarth at intel.com  Fri Jul  8 12:58:37 2011
From: charles.w.holzwarth at intel.com (Holzwarth, Charles W)
Date: Fri, 8 Jul 2011 12:58:37 -0700
Subject: Porous Silicon request Charles Holzwarth Intel
Message-ID: <1F4FECD144773542BDCD65C1A82CE1F89DD2C535@orsmsx502.amr.corp.intel.com>

Dear SpecMat Committee:

My name is Charles Holzwarth and I am research scientist at Intel who has recently joined SNF.   Part of my project requires the thermal doping of porous silicon wafers fabricated at Intel using a new tool we bought specifically for this purpose.   Attached are two documents,  a word doc describing the process I wish to perform at SNF and a pdf with the specs of our porous silicon etching system.  The main concern I see is that I will need to use clean rated furnaces at SNF after fabricating the porous silicon samples at Intel.  Although I do not see any obvious issues with the process I have outlined I understand the importance of maintaining the cleanliness of high temperature furnace and would understand if you require additional cleaning steps or other precautions be added to this process.

Best regards,
Charles Holzwarth
-------------- next part --------------
An HTML attachment was scrubbed...
URL: <http://snf.stanford.edu/pipermail/specmat/attachments/20110708/283279c0/attachment.html>
-------------- next part --------------
A non-text attachment was scrubbed...
Name: Charles Holzwarth Porous Si Doping Intel.docx
Type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
Size: 14028 bytes
Desc: Charles Holzwarth Porous Si Doping Intel.docx
URL: <http://snf.stanford.edu/pipermail/specmat/attachments/20110708/283279c0/attachment.bin>
-------------- next part --------------
A non-text attachment was scrubbed...
Name: PSB wet etching system.pdf
Type: application/pdf
Size: 588855 bytes
Desc: PSB wet etching system.pdf
URL: <http://snf.stanford.edu/pipermail/specmat/attachments/20110708/283279c0/attachment.pdf>

From fc3 at stanford.edu  Mon Jul 11 11:19:31 2011
From: fc3 at stanford.edu (Frank Chen)
Date: Mon, 11 Jul 2011 11:19:31 -0700 (PDT)
Subject: Indium Antimonide
In-Reply-To: <1231445093.26234.1310406382410.JavaMail.root@zm03.stanford.edu>
Message-ID: <1170196528.27254.1310408371347.JavaMail.root@zm03.stanford.edu>

Hi,

I'm interested in using indium antimonide (InSb) wafers in a gold deposition tool like innotec. I was wondering if this material is allowed as a substrate. I won't be storing or disposing of the wafers inside the clean room. The MSDS is attached here. The only processing I need to do at the SNF is deposit a ~70nm Au layer. The wafers are from

Firebird Technologies Inc.
2950 Highway Drive
Trail, BC V1R 2T3
Canada

Phone: (250) 364-5605
Fax: (250) 364-5643

http://www.firebird.bc.ca/

Please let me know if this is allowed. Thank you!

-Frank Chen (fc3)
-------------- next part --------------
A non-text attachment was scrubbed...
Name: MSDS - InSb.pdf
Type: application/pdf
Size: 99054 bytes
Desc: not available
URL: <http://snf.stanford.edu/pipermail/specmat/attachments/20110711/01eea46c/attachment.pdf>

From mtang at stanford.edu  Mon Jul 11 13:45:42 2011
From: mtang at stanford.edu (Mary Tang)
Date: Mon, 11 Jul 2011 13:45:42 -0700
Subject: Material for use in STSetch
In-Reply-To: <20110628101700.2e4e1a1cae0c11e8db06e7eefc1c8d4f.85f23de5bd.wbe@email12.secureserver.net>
References: <20110628101700.2e4e1a1cae0c11e8db06e7eefc1c8d4f.85f23de5bd.wbe@email12.secureserver.net>
Message-ID: <4E1B60F6.1020906@stanford.edu>

Hi Tracy --

Thanks for the TXRF.  It is OK to process your GaN-containing wafers in 
STSetch, provided (as we discussed) that the GaN is not exposed to the 
plasma.  Please submit another request if you plan to use other clean or 
semiclean tools.

Thanks,

Mary

On 6/28/2011 10:17 AM, Tracy Fung wrote:
> Specmat,
>
> My company would like to process GaN material deposited by an outside 
> vendor in STSetch.  We have the TXRF data from EAG attached.
>
> The tools we would like to get approval to use the material in:
> STSetch, etching Si wafer only with GaN layer coated in photoresist.
> P5000
>
> Please do not publicize our usage of GaN material.
>
> Thanks,
> _________________________
> Tracy Fung
>


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu

-------------- next part --------------
An HTML attachment was scrubbed...
URL: <http://snf.stanford.edu/pipermail/specmat/attachments/20110711/8fa5b75b/attachment.html>

From lelewang at stanford.edu  Tue Jul 12 22:29:17 2011
From: lelewang at stanford.edu (Lele Wang)
Date: Tue, 12 Jul 2011 22:29:17 -0700 (PDT)
Subject: Quest for processing in P5000
In-Reply-To: <1018321402.69143.1310532932961.JavaMail.root@zm01.stanford.edu>
Message-ID: <81825557.69546.1310534957910.JavaMail.root@zm01.stanford.edu>

Dear Committee,
My wafer is in the contaminated group with Pt metal lines on top. I need to do a directional oxide etch at the bottom of the trench in P5000 and the wafer will be well protected by 1.6um photoresist on top. The opening areas is in the trench which only have oxide and silicon and is clean. Is that ok to etch in p5000? Please reply ASAP. Thanks a lot.



Best,
Lele Wang
Department of Electrical Engineering


From mahnaz at stanford.edu  Fri Jul 15 09:03:05 2011
From: mahnaz at stanford.edu (Mahnaz Mansourpour)
Date: Fri, 15 Jul 2011 09:03:05 -0700
Subject: Follow-up: Request & update for new materials allowed in the
 clean room
In-Reply-To: <1311807461.34732.1310689131295.JavaMail.root@zm08.stanford.edu>
References: <1311807461.34732.1310689131295.JavaMail.root@zm08.stanford.edu>
Message-ID: <4E2064B9.3060309@stanford.edu>

Hi Champ,

i just checked with Ed and your request is granted.

Sorry for the delay, two of us had thought that the other person has 
gotten back to you.

mahnaz

On 7/14/2011 5:18 PM, Champ Phuthong wrote:
> Hi Mahnaz,
>
> I wonder how my request for Niobium-doped Strontium Titanate (Nb:SrTiO3) request is going now. I would like to a use the micromanipulator 6000 (number 5) for the electrical measurement of my substrates as well. Also, in number 5, I need to apply Ag-paint on my substrates to make the contact conductive for 4-point probing and micromanipulator 6000.
>
> I'll send you the MSDS for the sample from American Element later as soon as I get it. I am looking forward for your response.
>
> Regards,
> Champ
>
> ----- Forwarded Message -----
> From: "Champ Phuthong"<phuthong at stanford.edu>
> To: mahnaz at snf.stanford.edu
> Sent: Wednesday, July 6, 2011 2:48:10 PM
> Subject: Re: Request for new materials allowed in the clean room
>
> Hi Mahnaz,
>
> MSDS from MTI&  Corp and Superconix are attached here. For now, I would like to use the 4-point probing to measure the resistance/resistivity of my Nb:SrTiO3 samples, before and after (if needed) annealing.
> In the future, I plan to build the very thin, flow-through photoelectrochemical cells, but I have not figured it out about the process that might need the SNF facility.
>
> Regards,
> Champ
>
> ----- Original Message -----
> From: "Champ Phuthong"<phuthong at stanford.edu>
> To: mahnaz at snf.stanford.edu
> Sent: Tuesday, July 5, 2011 5:50:23 PM
> Subject: Request for new materials allowed in the clean room
>
> Dear Mahnaz,
>
> My name is Champ Phuthong, an MSE student in Lindenberg's group. As my special material request to SpecMat at snf.stanford.edu was bounced, I forward the request to you, according to Maureen.
> I would like to request your permission for my samples to be measured the resistance/resistivity in the clean room. According to the procedures, I have provided the following information:
>
> 1. Contact Information: Frank Chen, Coral login =fc3, Phone Number = 5053104738, email = fc3 at stanford.edu,
> Champ Phuthong, Coral login (soon), Phone Number = 6507967475, email = phuthong at stanford.edu
> our PI = Aaron Lindenberg.
>
> Frank Chen is my group member and an SNF lab member, he will be trained for the 4-point probe measurement.
> I myself will apply for the SNF labmember and will be trained too.
>
> 2. The specification of materials: 0.1 wt% Nb-doped SrTiO3
> Common name= -
> Trade name = Niobium-doped Strontium Titanate
> CAS Number = 1206-05-9 (that of Strontium Titanate)
> Attached is the materials' MSDS (The manufacturing company tells me that MSDS for Nb:SrTiO3 can be replaced by that for SrTiO3)
> The Storage Group Identifier = G Non-Reactive Materials and Non-Hazardous Materials
> Main Hazardous Class = 11. Non Hazardous
> I categorized this according to my knowledge from MSDS attached, please correct me if you find any incorrect part.
>
> 3. Vendor/Manufacturer info: MTI Corporation (Materials Tech. Intl.) 860 South 19th Street
> Richmond, CA 94804, USA Tel: 510-525-3070, http://www.mtixtl.com/
>
> 4. Reason for request: It is the sample for photoanode of the photoelectrochemical cells. I would like to measure the sample's resistance/resistivity to check if I need to anneal it in order to make it so conductive that it works for my experiment. The company suggests that I use the 4-point probing.
>
> 5. Process Flow: Frank and I will measure the sample's resistance/resistivity using the 4-point probe machine.
>
> 6. Amount and form: 1 substrate at a time for testing, after annealing (if needed) to increase conductivity.
>
> 7. Storage: I will not store the sample at SNF.
>
> 8. Disposal: According to number 5., we will not dispose any waste or excess of the material.
>
> Also, we have a few samples coming for testing in 2-3 weeks. I am looking forward to your reply. If you have any question or concern or there are some parts that I fill wrong, please let me know.
>
> Your sincerely,
> Champ Phuthong
>
>


From mahnaz at stanford.edu  Fri Jul 15 09:22:47 2011
From: mahnaz at stanford.edu (Mahnaz Mansourpour)
Date: Fri, 15 Jul 2011 09:22:47 -0700
Subject: Follow-up: Request & update for new materials allowed in the
 clean room
In-Reply-To: <4E2064B9.3060309@stanford.edu>
References: <1311807461.34732.1310689131295.JavaMail.root@zm08.stanford.edu> <4E2064B9.3060309@stanford.edu>
Message-ID: <4E206957.7080606@stanford.edu>

Hi Champ one more thing, I should have included in the last email..
I remeber that there was a case of some sort of contamination so
You need to have your own probe for the micromainpulator.
Secondly,   check with Uli before actually doing the measurement to be 
sure she is okay with it.
any question or doubt please talk to Ed or Uli.

mahnaz


On 7/15/2011 9:03 AM, Mahnaz Mansourpour wrote:
> Hi Champ,
>
> i just checked with Ed and your request is granted.
>
> Sorry for the delay, two of us had thought that the other person has 
> gotten back to you.
>
> mahnaz
>
> On 7/14/2011 5:18 PM, Champ Phuthong wrote:
>> Hi Mahnaz,
>>
>> I wonder how my request for Niobium-doped Strontium Titanate 
>> (Nb:SrTiO3) request is going now. I would like to a use the 
>> micromanipulator 6000 (number 5) for the electrical measurement of my 
>> substrates as well. Also, in number 5, I need to apply Ag-paint on my 
>> substrates to make the contact conductive for 4-point probing and 
>> micromanipulator 6000.
>>
>> I'll send you the MSDS for the sample from American Element later as 
>> soon as I get it. I am looking forward for your response.
>>
>> Regards,
>> Champ
>>
>> ----- Forwarded Message -----
>> From: "Champ Phuthong"<phuthong at stanford.edu>
>> To: mahnaz at snf.stanford.edu
>> Sent: Wednesday, July 6, 2011 2:48:10 PM
>> Subject: Re: Request for new materials allowed in the clean room
>>
>> Hi Mahnaz,
>>
>> MSDS from MTI&  Corp and Superconix are attached here. For now, I 
>> would like to use the 4-point probing to measure the 
>> resistance/resistivity of my Nb:SrTiO3 samples, before and after (if 
>> needed) annealing.
>> In the future, I plan to build the very thin, flow-through 
>> photoelectrochemical cells, but I have not figured it out about the 
>> process that might need the SNF facility.
>>
>> Regards,
>> Champ
>>
>> ----- Original Message -----
>> From: "Champ Phuthong"<phuthong at stanford.edu>
>> To: mahnaz at snf.stanford.edu
>> Sent: Tuesday, July 5, 2011 5:50:23 PM
>> Subject: Request for new materials allowed in the clean room
>>
>> Dear Mahnaz,
>>
>> My name is Champ Phuthong, an MSE student in Lindenberg's group. As 
>> my special material request to SpecMat at snf.stanford.edu was bounced, 
>> I forward the request to you, according to Maureen.
>> I would like to request your permission for my samples to be measured 
>> the resistance/resistivity in the clean room. According to the 
>> procedures, I have provided the following information:
>>
>> 1. Contact Information: Frank Chen, Coral login =fc3, Phone Number = 
>> 5053104738, email = fc3 at stanford.edu,
>> Champ Phuthong, Coral login (soon), Phone Number = 6507967475, email 
>> = phuthong at stanford.edu
>> our PI = Aaron Lindenberg.
>>
>> Frank Chen is my group member and an SNF lab member, he will be 
>> trained for the 4-point probe measurement.
>> I myself will apply for the SNF labmember and will be trained too.
>>
>> 2. The specification of materials: 0.1 wt% Nb-doped SrTiO3
>> Common name= -
>> Trade name = Niobium-doped Strontium Titanate
>> CAS Number = 1206-05-9 (that of Strontium Titanate)
>> Attached is the materials' MSDS (The manufacturing company tells me 
>> that MSDS for Nb:SrTiO3 can be replaced by that for SrTiO3)
>> The Storage Group Identifier = G Non-Reactive Materials and 
>> Non-Hazardous Materials
>> Main Hazardous Class = 11. Non Hazardous
>> I categorized this according to my knowledge from MSDS attached, 
>> please correct me if you find any incorrect part.
>>
>> 3. Vendor/Manufacturer info: MTI Corporation (Materials Tech. Intl.) 
>> 860 South 19th Street
>> Richmond, CA 94804, USA Tel: 510-525-3070, http://www.mtixtl.com/
>>
>> 4. Reason for request: It is the sample for photoanode of the 
>> photoelectrochemical cells. I would like to measure the sample's 
>> resistance/resistivity to check if I need to anneal it in order to 
>> make it so conductive that it works for my experiment. The company 
>> suggests that I use the 4-point probing.
>>
>> 5. Process Flow: Frank and I will measure the sample's 
>> resistance/resistivity using the 4-point probe machine.
>>
>> 6. Amount and form: 1 substrate at a time for testing, after 
>> annealing (if needed) to increase conductivity.
>>
>> 7. Storage: I will not store the sample at SNF.
>>
>> 8. Disposal: According to number 5., we will not dispose any waste or 
>> excess of the material.
>>
>> Also, we have a few samples coming for testing in 2-3 weeks. I am 
>> looking forward to your reply. If you have any question or concern or 
>> there are some parts that I fill wrong, please let me know.
>>
>> Your sincerely,
>> Champ Phuthong
>>
>>
>


From wslee at stanford.edu  Tue Jul 26 12:03:03 2011
From: wslee at stanford.edu (Scott Lee)
Date: Tue, 26 Jul 2011 12:03:03 -0700
Subject: Glycerin use at wbgeneral
Message-ID: <CAC8qUHDTxKvzOyNOkYY2m_OBfpWMDCPsmroixvYH6vuufE_mvg@mail.gmail.com>

Hi all,

I wasn't sure who to send this to so I decided to send it to the safety and
specmat mailing lists.

I am working with a collaborator in Illinois on hafnium diboride (HfB2) as a
hard, conductive material.  I need to selectively etch SiO2 without etching
the HfB2.  My collaborator says his group has had success using a 5:3
BOE:glycerin solution where the BOE is 7:1 40%NH4F:49% HF.

I would like to use this solution at wbgeneral since I will be working with
HF and I need to go to CPD afterwards.  Since glycerin is an alcohol (which
is not normally permitted at wbgeneral), I wanted to make sure it is okay to
use.  Let me know if you have any concerns.  I attached the link to the MSDS
sheet below.

Thanks,
Scott

http://www.sciencelab.com/msds.php?msdsId=9927350
-------------- next part --------------
An HTML attachment was scrubbed...
URL: <http://snf.stanford.edu/pipermail/specmat/attachments/20110726/f40a9cfc/attachment.html>