From ranidaw at stanford.edu Mon Oct 3 01:29:13 2011 From: ranidaw at stanford.edu (Ranida Wongpiya) Date: Mon, 3 Oct 2011 01:29:13 -0700 (PDT) Subject: FeCl3 Copper Etch In-Reply-To: <881748513.1709951.1317630430721.JavaMail.root@zm07.stanford.edu> Message-ID: <2016922784.1709964.1317630553346.JavaMail.root@zm07.stanford.edu> Hi, I'm planing to use copper etch (FeCl3) in the cleanroom. I believe someone has already used and stored this chemical inside before. So, I'm writing to ask what do I have to do to be able to use it. Do I have to fill some documents? Thank you so much. Best, Ranida -- Ranida Wongpiya Graduate Student Materials Science and Engineering Stanford University (650) 391-6660 -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Mon Oct 3 16:27:31 2011 From: mtang at stanford.edu (Mary Tang) Date: Mon, 03 Oct 2011 16:27:31 -0700 Subject: completion of partially processed wafers In-Reply-To: <151C8E57-0C1D-4969-9218-A9E2B12E0B9F@slac.stanford.edu> References: ,<22C701E3-3EBD-462A-BA26-42B2BB36A0E8@slac.stanford.edu> <151C8E57-0C1D-4969-9218-A9E2B12E0B9F@slac.stanford.edu> Message-ID: <4E8A44E3.7060504@stanford.edu> Hi Gabriella -- Apologies for the delay in response. As we've discussed, it should be fine to process these wafers as you propose in semiclean tools. Thanks, Mary On 9/26/2011 2:18 PM, Carini, Gabriella wrote: > Hello, > > I recently joined SLAC and became SNF labmember. As in my previous position at BNL, I am involved with semiconductor processing for x-ray detectors and as I moved here I would like to have the possibility to complete 4 wafers I had started processing sometime ago at BNL. The devices I'm trying to complete at SNF have been designed and developed at BNL for the XPP instrument at LCLS (SLAC). We call them XAMPS (X-ray Active Matrix Pixel Sensor). Up to their current status the wafers have been entirely processed at BNL, Instrumentation Division, Semiconductor Detector Development and Processing Lab. This is a small class-100 cleanroom (600 sq ft) entirely developed for the fabrication of silicon detectors. These devices are made on high-resistivity (>4kOhm cm) silicon wafers (FZ). To maintain the quality and achieve the needed performances a strict control of contaminants is implemented and most of the tools are custom-made to avoid damages during wafer handling: in fact all the devices require double-side processing. Only qualified stuff members are allowed to work in this cleanroom (no more than 2 people simultaneously and 4-5 overall). The only substrate material allowed is high-resistivity silicon. The only dielectrics are SiO2 (thermal and PECVD) and Si3N4 (PECVD). The only metal allowed is AlSi (1%) by sputtering. > > The wafers have the backside almost completed (metal already patterned - need only overglass) and the frontside at metal1: that is, I have to deposit a dielectric, open the vias, deposit and pattern the second metal and put the overglass. I have already identified and took most of the trainings on the tools I plan to use for this process. > I believe that the whole process is entirely CMOS compatible and the wafers do not present any harm to the SNF community. > > Please let me know if I can proceed or if you need more info. > > Thanks, > Ga. > > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility Paul G. Allen Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From carini at slac.stanford.edu Mon Oct 3 16:44:35 2011 From: carini at slac.stanford.edu (Carini, Gabriella) Date: Mon, 3 Oct 2011 16:44:35 -0700 Subject: completion of partially processed wafers In-Reply-To: <4E8A44E3.7060504@stanford.edu> References: ,<22C701E3-3EBD-462A-BA26-42B2BB36A0E8@slac.stanford.edu> <151C8E57-0C1D-4969-9218-A9E2B12E0B9F@slac.stanford.edu> <4E8A44E3.7060504@stanford.edu> Message-ID: <85E7C930-E090-4A9F-8C37-20D114606DE9@slac.stanford.edu> Thanks! I'll probably start processing by the end of this week :) Ga. On Oct 3, 2011, at 4:27 PM, Mary Tang wrote: > Hi Gabriella -- > > Apologies for the delay in response. As we've discussed, it should be > fine to process these wafers as you propose in semiclean tools. > > Thanks, > > Mary > > On 9/26/2011 2:18 PM, Carini, Gabriella wrote: >> Hello, >> >> I recently joined SLAC and became SNF labmember. As in my previous position at BNL, I am involved with semiconductor processing for x-ray detectors and as I moved here I would like to have the possibility to complete 4 wafers I had started processing sometime ago at BNL. The devices I'm trying to complete at SNF have been designed and developed at BNL for the XPP instrument at LCLS (SLAC). We call them XAMPS (X-ray Active Matrix Pixel Sensor). Up to their current status the wafers have been entirely processed at BNL, Instrumentation Division, Semiconductor Detector Development and Processing Lab. This is a small class-100 cleanroom (600 sq ft) entirely developed for the fabrication of silicon detectors. These devices are made on high-resistivity (>4kOhm cm) silicon wafers (FZ). To maintain the quality and achieve the needed performances a strict control of contaminants is implemented and most of the tools are custom-made to avoid damages during wafer handling: in fact all the devices require double-side processing. Only qualified stuff members are allowed to work in this cleanroom (no more than 2 people simultaneously and 4-5 overall). The only substrate material allowed is high-resistivity silicon. The only dielectrics are SiO2 (thermal and PECVD) and Si3N4 (PECVD). The only metal allowed is AlSi (1%) by sputtering. >> >> The wafers have the backside almost completed (metal already patterned - need only overglass) and the frontside at metal1: that is, I have to deposit a dielectric, open the vias, deposit and pattern the second metal and put the overglass. I have already identified and took most of the trainings on the tools I plan to use for this process. >> I believe that the whole process is entirely CMOS compatible and the wafers do not present any harm to the SNF community. >> >> Please let me know if I can proceed or if you need more info. >> >> Thanks, >> Ga. >> >> > > > -- > Mary X. Tang, Ph.D. > Stanford Nanofabrication Facility > Paul G. Allen Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu > > From khu834 at stanford.edu Thu Oct 6 15:06:01 2011 From: khu834 at stanford.edu (Kevin Chih-Yao Huang) Date: Thu, 6 Oct 2011 15:06:01 -0700 Subject: phosphoric acid and hydrogen peroxide Message-ID: Hi: My name is Kevin Huang. Coral ID khu834. I would like to mix H3PO4:H2O2:H20 in the ratio 2:1:25 for etching GaAs at room temperature. I just want to make sure that this is ok. If this is ok, I would also like to check whether pyrex beakers and measuring cylinders are fine, or do I have to use teflon beakers. I will make sure the etched GaAs is collected and disposed via the chemical pass through. Thank you. Kevin -------------- next part -------------- An HTML attachment was scrubbed... URL: From jaypark at stanford.edu Fri Oct 14 17:24:09 2011 From: jaypark at stanford.edu (Jason Matthew Parker) Date: Fri, 14 Oct 2011 17:24:09 -0700 (PDT) Subject: Stsetch specmat request In-Reply-To: <351342103.1744699.1318638125705.JavaMail.root@zm08.stanford.edu> Message-ID: <2026341704.1744742.1318638249125.JavaMail.root@zm08.stanford.edu> Hi SpecMat, I've attached a short description of a process I'm requesting to run in stsetch. Please let me know your input or if there's more you need from me. Thanks, Jason ------------------- Stanford University Ph. D. Candidate, Electrical Engineering 420 Via Ortega St. Stanford, CA 94305-4070 Office: Paul Allen 300X Phone: 650-725-0419 Mobile: 650-380-2890 -------------------- -------------- next part -------------- A non-text attachment was scrubbed... Name: 2011October14_jparker_SpecMat-request.doc Type: application/msword Size: 39424 bytes Desc: not available URL: From mtang at stanford.edu Wed Oct 19 20:21:16 2011 From: mtang at stanford.edu (Mary Tang) Date: Wed, 19 Oct 2011 20:21:16 -0700 Subject: Fwd: RE: Pquest chemistry? Message-ID: <4E9F93AC.9000802@stanford.edu> Hey SpecMat-ers -- ZnO in Pquest? M -------- Original Message -------- Return-Path: fixed-term.Jonathan.Mailoa at us.bosch.com Received: from mx2.Stanford.EDU (LHLO mx2.stanford.edu) (171.67.219.72) by zm04.stanford.edu with LMTP; Wed, 19 Oct 2011 17:44:22 -0700 (PDT) Received: from mx2.stanford.edu (localhost.localdomain [127.0.0.1]) by localhost (Postfix) with SMTP id 75E5023E0C2 for ; Wed, 19 Oct 2011 17:44:22 -0700 (PDT) Received: from smtp2-v.fe.bosch.de (smtp2-v.fe.bosch.de [139.15.237.6]) (using TLSv1 with cipher ADH-AES256-SHA (256/256 bits)) (No client certificate requested) by mx2.stanford.edu (Postfix) with ESMTPS id E64D77F911 for ; Wed, 19 Oct 2011 17:44:21 -0700 (PDT) Received: from vsmta13.fe.internet.bosch.com (unknown [10.4.98.30]) by imta23.fe.bosch.de (Postfix) with ESMTP id 4794D5820801; Thu, 20 Oct 2011 02:44:20 +0200 (CEST) Received: from localhost (vsgw2.fe.internet.bosch.com [10.4.98.13]) by vsmta13.fe.internet.bosch.com (Postfix) with SMTP id 343035CA04F7; Thu, 20 Oct 2011 02:44:20 +0200 (CEST) Received: from SI-MBX80.de.bosch.com ([10.3.153.126]) by si-hub07.de.bosch.com ([10.3.153.132]) with mapi; Thu, 20 Oct 2011 02:44:13 +0200 From: Mailoa Jonathan (CR/RTC2.1-NA) To: Mary Tang CC: eenriquez at snf.stanford.edu Date: Thu, 20 Oct 2011 02:44:10 +0200 Subject: RE: Pquest chemistry? Thread-Topic: Pquest chemistry? Thread-Index: AcyOwOmLjPRbcGgZTo+aJ0jmHtUH6wAAC76A Message-ID: References: <4E9F6E07.9060308 at stanford.edu> In-Reply-To: <4E9F6E07.9060308 at stanford.edu> Accept-Language: en-US, de-DE Content-Language: en-US X-MS-Has-Attach: X-MS-TNEF-Correlator: acceptlanguage: en-US, de-DE Content-Type: text/plain; charset="us-ascii" Content-Transfer-Encoding: quoted-printable MIME-Version: 1.0 Hi Mary, Thank you very much, this is great! I currently have ~1um ZnO on quartz wafer, with polystyrene microsphere as the etching mask. If it would be alright to etch this in pquest, can I be trained for it? Best Jonathan -----Original Message----- From: Mary Tang [mailto:mtang at stanford.edu] Sent: Wednesday, October 19, 2011 5:41 PM To: Mailoa Jonathan (CR/RTC2.1-NA) Cc: eenriquez at snf.stanford.edu Subject: Re: Pquest chemistry? Hi Jonathan -- Yes, indeed, the pquest is what you want (although we should have a couple more to offer you with the new etchers due to arrive in the next couple of months). The etch gases are on the wiki, but filed in a way that may not get found -- at the top of the dry etch folder: https://snf.stanford.edu/SNF/equipment/dry-etching Mary On 10/19/2011 5:36 PM, Mailoa Jonathan (CR/RTC2.1-NA) wrote: > Hi Mary and Elmer, > > I have been trying to find a 'gold-contaminated' chlorine-based etcher in SNF. I am wondering if pquest uses chlorine-based chemistry for its etching process? What are the available gas? > > I have been trying to find what the etching gas is in SNF wiki, but it does not seem to be listed. Please let me know. > > Thank you very much > Jonathan > > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility Paul G. Allen Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From edmyers at stanford.edu Thu Oct 20 07:34:48 2011 From: edmyers at stanford.edu (Ed Myers) Date: Thu, 20 Oct 2011 07:34:48 -0700 Subject: Fwd: RE: Pquest chemistry? In-Reply-To: <4E9F93AC.9000802@stanford.edu> References: <4E9F93AC.9000802@stanford.edu> Message-ID: <4EA03188.2020907@stanford.edu> All, We have not been allowing Zn in any of our vacuum chambers due to it's vapor pressure and long residence in a chamber. Ed On 10/19/2011 8:21 PM, Mary Tang wrote: > Hey SpecMat-ers -- > > ZnO in Pquest? > > M > > -------- Original Message -------- > Return-Path: fixed-term.Jonathan.Mailoa at us.bosch.com > Received: from mx2.Stanford.EDU (LHLO mx2.stanford.edu) > (171.67.219.72) by zm04.stanford.edu with LMTP; Wed, 19 Oct 2011 > 17:44:22 -0700 (PDT) > Received: from mx2.stanford.edu (localhost.localdomain [127.0.0.1]) > by localhost (Postfix) with SMTP id 75E5023E0C2 for > ; Wed, 19 Oct 2011 17:44:22 -0700 (PDT) > Received: from smtp2-v.fe.bosch.de (smtp2-v.fe.bosch.de > [139.15.237.6]) (using TLSv1 with cipher ADH-AES256-SHA (256/256 > bits)) (No client certificate requested) by mx2.stanford.edu (Postfix) > with ESMTPS id E64D77F911 for ; Wed, 19 Oct 2011 > 17:44:21 -0700 (PDT) > Received: from vsmta13.fe.internet.bosch.com (unknown [10.4.98.30]) > by imta23.fe.bosch.de (Postfix) with ESMTP id 4794D5820801; Thu, 20 > Oct 2011 02:44:20 +0200 (CEST) > Received: from localhost (vsgw2.fe.internet.bosch.com [10.4.98.13]) > by vsmta13.fe.internet.bosch.com (Postfix) with SMTP id 343035CA04F7; > Thu, 20 Oct 2011 02:44:20 +0200 (CEST) > Received: from SI-MBX80.de.bosch.com ([10.3.153.126]) by > si-hub07.de.bosch.com ([10.3.153.132]) with mapi; Thu, 20 Oct 2011 > 02:44:13 +0200 > From: Mailoa Jonathan (CR/RTC2.1-NA) > > To: Mary Tang > CC: eenriquez at snf.stanford.edu > Date: Thu, 20 Oct 2011 02:44:10 +0200 > Subject: RE: Pquest chemistry? > Thread-Topic: Pquest chemistry? > Thread-Index: AcyOwOmLjPRbcGgZTo+aJ0jmHtUH6wAAC76A > Message-ID: > > References: > > <4E9F6E07.9060308 at stanford.edu> > In-Reply-To: <4E9F6E07.9060308 at stanford.edu> > Accept-Language: en-US, de-DE > Content-Language: en-US > X-MS-Has-Attach: > X-MS-TNEF-Correlator: > acceptlanguage: en-US, de-DE > Content-Type: text/plain; charset="us-ascii" > Content-Transfer-Encoding: quoted-printable > MIME-Version: 1.0 > > > > Hi Mary, > > Thank you very much, this is great! > > I currently have ~1um ZnO on quartz wafer, with polystyrene microsphere as the etching mask. If it would be alright to etch this in pquest, can I be trained for it? > > Best > Jonathan > > > -----Original Message----- > From: Mary Tang [mailto:mtang at stanford.edu] > Sent: Wednesday, October 19, 2011 5:41 PM > To: Mailoa Jonathan (CR/RTC2.1-NA) > Cc:eenriquez at snf.stanford.edu > Subject: Re: Pquest chemistry? > > Hi Jonathan -- > > Yes, indeed, the pquest is what you want (although we should have a > couple more to offer you with the new etchers due to arrive in the next > couple of months). > > The etch gases are on the wiki, but filed in a way that may not get > found -- at the top of the dry etch folder: > > https://snf.stanford.edu/SNF/equipment/dry-etching > > > Mary > > On 10/19/2011 5:36 PM, Mailoa Jonathan (CR/RTC2.1-NA) wrote: > > Hi Mary and Elmer, > > > > I have been trying to find a 'gold-contaminated' chlorine-based etcher in SNF. I am wondering if pquest uses chlorine-based chemistry for its etching process? What are the available gas? > > > > I have been trying to find what the etching gas is in SNF wiki, but it does not seem to be listed. Please let me know. > > > > Thank you very much > > Jonathan > > > > > > > -- > Mary X. Tang, Ph.D. > Stanford Nanofabrication Facility > Paul G. Allen Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu > -------------- next part -------------- An HTML attachment was scrubbed... URL: From jpmailoa at MIT.EDU Thu Oct 20 14:25:08 2011 From: jpmailoa at MIT.EDU (Jonathan P Mailoa) Date: Thu, 20 Oct 2011 17:25:08 -0400 Subject: Etching ZnO in pquest during contamination period Message-ID: <20111020172508.sfguodr5wgwowckw@webmail.mit.edu> Hi, I am thinking of etching ZnO thin film (on quartz substrate) with polystyrene microsphere as the etching mask. I am thinking of using pquest for this process, since it is the only Cl-based gold contaminated etcher available at SNF. (I have been informed that F-based etchants won't work so well) I have previously talked to Jim McVittae about this, and I have been informed that the resulting compound, ZnCl2 is considered a contaminant for GaAs users (Zn contamination), and as such ZnO is not desired in the pquest. I have also ben made aware that pquest has a special rule, where F-based gas is only allowed during the last week of the month, since it is considered contaminant. I am wondering if I will be allowed to etch my ZnO using Cl-based etching gas during this contamination period, where users are allowed to use F-based gas? Best Jonathan From josep at stanford.edu Thu Oct 27 16:51:28 2011 From: josep at stanford.edu (Jose Padovani) Date: Thu, 27 Oct 2011 16:51:28 -0700 Subject: New MicroChem resist Message-ID: Hi, Please find attached the request document to bring in a new photoresist into the SNF. Also attached is an application notes pdf and the MSDS. Let me know if you need more information. Regards, Jose -- Jose Padovani Graduate Student Electrical Engineering Department Stanford University -------------- next part -------------- A non-text attachment was scrubbed... Name: SpecMat Request.docx Type: application/vnd.openxmlformats-officedocument.wordprocessingml.document Size: 110135 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: KMPR Data Sheet.pdf Type: application/pdf Size: 359655 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Microchem KMPR MSDS.pdf Type: application/pdf Size: 49525 bytes Desc: not available URL: -------------- next part -------------- From mtang at stanford.edu Thu Oct 27 17:00:28 2011 From: mtang at stanford.edu (Mary Tang) Date: Thu, 27 Oct 2011 17:00:28 -0700 Subject: New MicroChem resist In-Reply-To: References: Message-ID: <4EA9F09C.1060808@stanford.edu> Hi SpecMat -- I believe this has been approved already -- as long as we keep it out of ASML, I suspect it's OK (it's like SU-8). So, unless Mahnaz says otherwise, I think it's OK. However.... It really should be stored cold. We'll be without power for 3 days during shutdown and I suspect the freezer won't be very cold then -- so would suggest that he might want to find another place to store this. What do you all think? Mary On 10/27/2011 4:51 PM, Jose Padovani wrote: > Hi, > > Please find attached the request document to bring in a new photoresist into the SNF. Also attached is an application notes pdf and the MSDS. > > Let me know if you need more information. > > Regards, > Jose > > > -- > Jose Padovani > Graduate Student > Electrical Engineering Department > Stanford University > > > > > > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility Paul G. Allen Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From mahnaz at stanford.edu Fri Oct 28 09:35:28 2011 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Fri, 28 Oct 2011 09:35:28 -0700 Subject: New MicroChem resist In-Reply-To: References: Message-ID: <4EAAD9D0.7030408@stanford.edu> Hi Jose, I like to let you know that your request has been approved. Thank you for writing such a complete process flow. Please note, due to lack of storage SNF will provide the developer. Secondly, read the attachment and be aware that you can contaminate work space and other lab members work. Are you a headway user already or need training? mahnaz On 10/27/2011 4:51 PM, Jose Padovani wrote: > Hi, > > Please find attached the request document to bring in a new photoresist into the SNF. Also attached is an application notes pdf and the MSDS. > > Let me know if you need more information. > > Regards, > Jose > > > -- > Jose Padovani > Graduate Student > Electrical Engineering Department > Stanford University > > > > > > > -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: SU-8 Handling Protocol2.doc Type: application/msword Size: 32768 bytes Desc: not available URL: From mtang at stanford.edu Mon Oct 31 11:05:21 2011 From: mtang at stanford.edu (Mary Tang) Date: Mon, 31 Oct 2011 11:05:21 -0700 Subject: Fwd: Etching ZnO in pquest during contamination period In-Reply-To: References: <20111020172508.sfguodr5wgwowckw@webmail.mit.edu> Message-ID: <4EAEE361.3070201@stanford.edu> Hi Jonathan -- Apologies for the delay in response. There's been a lot of discussion about this particular request as well as how to better respond to the more difficult SpecMat questions, like this one. SpecMat requests that require discussion will be reviewed every Thursday at 2:30 -- which is now a standing staff meeting where hardware as well as process changes are presented. As for your specific request, the issue at hand is that the PQuest does not really belong to SNF, but to the III-V device community. Jim McVittie is both our etch and contamination expert -- and he has been following up with the III-V faculty on this and related concerns. I don't believe he has a definitive yes or no from them as yet, but fees unlikely they will be satisfied with a wet chamber clean. The problem with the PQuest is that the system design is such that the chamber walls actually play an important role in the chemical reactions so a lot of caution is exercised over the types of materials allowed in this system. So, the answer is not a definitive "no", but nor is it a "yes". Near term, please to contact Ed Myers about the ion milling system in the SNC lab. This system was acquired to etch materials just like this. Long term, this is just yet more justification for having this sort of capability at SNF. Mary On 10/31/2011 10:20 AM, Jonathan Mailoa wrote: > Hi Mary, > > Two weeks ago I sent this etching permission request to specmat. I am > wondering if you have a timeline on when I'll possibly know the result? > > I would also like to know if I have any option for ZnO dry etch (sputter or > RIE) which will be allowed. > > Best > Jonathan > > ---------- Forwarded message ---------- > From: Jonathan P Mailoa > Date: Thursday, October 20, 2011 > Subject: Etching ZnO in pquest during contamination period > To: specmat at snf.stanford.edu > Cc: gyama at snf.stanford.edu, Gary.Yama at us.bosch.com, jpmailoa at gmail.com > > > Hi, > > I am thinking of etching ZnO thin film (on quartz substrate) with > polystyrene microsphere as the etching mask. I am thinking of using > pquest for this process, since it is the only Cl-based gold > contaminated etcher available at SNF. (I have been informed that > F-based etchants won't work so well) > > I have previously talked to Jim McVittae about this, and I have been > informed that the resulting compound, ZnCl2 is considered a > contaminant for GaAs users (Zn contamination), and as such ZnO is not > desired in the pquest. I have also ben made aware that pquest has a > special rule, where F-based gas is only allowed during the last week > of the month, since it is considered contaminant. > > I am wondering if I will be allowed to etch my ZnO using Cl-based > etching gas during this contamination period, where users are allowed > to use F-based gas? > > Best > Jonathan > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility Paul G. Allen Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu