From mtang at stanford.edu Fri Sep 2 09:52:52 2011 From: mtang at stanford.edu (Mary Tang) Date: Fri, 02 Sep 2011 09:52:52 -0700 Subject: SpecMat request: AZ negative resist In-Reply-To: <1314224264.42724.YahooMailNeo@web38906.mail.mud.yahoo.com> References: <1314224264.42724.YahooMailNeo@web38906.mail.mud.yahoo.com> Message-ID: <4E6109E4.1050705@stanford.edu> Sorry for the delay. This is fine; you know the drill. Thanks for the info. M On 8/24/2011 3:17 PM, jim kruger wrote: > SpecMat request 8-24-11 > > jimkruger at snf.stanford.edu > > customer: NthDegree Tech Worldwide > > Material: AZ nLof 2070 negative photoresist. > Perhaps other viscosities later. > > Supplier: Capital Scientific capitalscientific.com > Mfg.: Clariant AZ > Quantity: 1 quart > > > Storage: Group L, with other personal photoresists. > > I choose this negative resist because of its compatibility with our > standard resists: same TMAH developer, spinner cup compatibility, etc. > > It remains acetone soluble until BOTH i-line exposure and 110 C bake > so clean up is not an issue. > > Equipment: > spin: Headway or Laurell > bake: litho hot plate or ovens > develop: SVG track or hand develop, MF 26A > Metal dep: Innotec or send out. Ni/Al > Lift-off: Wbsolvent, acetone or 1165, IPA rinse > > Inspect: optical or SEM. > > Lift-off in acetone should work because the resist ?anti-bleaches? and > crosslinks only at the surface (~1 or so um), the bulk remaining TMAH > soluble for undercut profile and later, acetone soluble for lift-off. > 1165 can be used for a more aggressive liftoff, attacking even the > exposed material if hot. > > Attached: MSDS, AZ data sheet, process info from microchemicals.com > > > I have discussed this with Mahnaz. > > Thanks, > > jim > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility Paul G. Allen Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From jimkruger at yahoo.com Tue Sep 6 13:48:39 2011 From: jimkruger at yahoo.com (jim kruger) Date: Tue, 6 Sep 2011 13:48:39 -0700 (PDT) Subject: Brewer Science CR-200 bonding material Message-ID: <1315342119.67119.YahooMailNeo@web38903.mail.mud.yahoo.com> I plan to bring cured films on Si wafers for Litho tests into the lab. No liquids for spinning at the moment. Litho Metal dep: ? Innotec Lift-off:????? WBsolvent Jim -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: waferbond_cr_200.ds.pdf Type: application/pdf Size: 189262 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Cr-200_MSDS_5821_WAFERBONDC_BREWERSCIE.pdf Type: application/pdf Size: 160601 bytes Desc: not available URL: From hazeghi at stanford.edu Fri Sep 9 18:00:26 2011 From: hazeghi at stanford.edu (Aryan Hazeghi) Date: Fri, 9 Sep 2011 18:00:26 -0700 (PDT) Subject: ALD HfO2/Ge wet etch at wbgen Message-ID: <009501cc6f54$fdfa5840$f9ef08c0$@stanford.edu> Hello, I would like to wet etch HfO2 (ALD in Fiji-L clean chamber) /Ge at wbgen. I will be using 50:1 DI:HF (please see the attached paper as one example.) The reason I am choosing wet etch is because this is a thin film (50-70A) functioning as gate oxide. The purpose of my research is to study the interface and bulk properties modification of this film when exposed to a low temperature, high radical density plasma at low power (TEL SPA.) Hence the film need be preserved as much as possible and not exposed to other plasma that might interfere with analysis of the effects of the TEL SPA plasma. My feature size is ~1e2 um and not critical. I have not found a labmember using HfO2/Ge wet etch at this wetbench so I would like to confirm with specmat. I would like to know what draining procedure I should follow. Thank you, Best, Aryan Aryan Hazeghi Stanford Nanofabrication Facility 304X Paul G. Allen 420 Via Palou Mall Stanford, CA 94305 650-391-6509 -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: HfO2 etch.pdf Type: application/pdf Size: 120843 bytes Desc: not available URL: From mtang at stanford.edu Mon Sep 12 11:20:06 2011 From: mtang at stanford.edu (Mary Tang) Date: Mon, 12 Sep 2011 11:20:06 -0700 Subject: ALD HfO2/Ge wet etch at wbgen In-Reply-To: <009501cc6f54$fdfa5840$f9ef08c0$@stanford.edu> References: <009501cc6f54$fdfa5840$f9ef08c0$@stanford.edu> Message-ID: <4E6E4D56.3000908@stanford.edu> Hi Aryan -- I take it you really mean wbgeneral as opposed to wbgen2? If so, wbgeneral should be fine. You will need to make sure your labware is clean if you want your samples to remain clean. If you mean wbgen2, then I think we have to clarify what qualifies as clean on this bench, since I don't believe Hf has been used on this before. Please confirm which bench. Thanks, Mary On 9/9/2011 6:00 PM, Aryan Hazeghi wrote: > Hello, > > > > I would like to wet etch HfO2 (ALD in Fiji-L clean chamber) /Ge at wbgen. > I will be using 50:1 DI:HF (please see the attached paper as one example.) > The reason I am choosing wet etch is because this is a thin film (50-70A) > functioning as gate oxide. The purpose of my research is to study the > interface and bulk properties modification of this film when exposed to a > low temperature, high radical density plasma at low power (TEL SPA.) Hence > the film need be preserved as much as possible and not exposed to other > plasma that might interfere with analysis of the effects of the TEL SPA > plasma. My feature size is ~1e2 um and not critical. I have not found a > labmember using HfO2/Ge wet etch at this wetbench so I would like to > confirm with specmat. I would like to know what draining procedure I > should follow. > > Thank you, > > > > Best, > > Aryan > > > > Aryan Hazeghi > > Stanford Nanofabrication Facility > > 304X Paul G. Allen > > 420 Via Palou Mall > > Stanford, CA 94305 > > 650-391-6509 > > > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility Paul G. Allen Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mtang at stanford.edu Mon Sep 12 12:02:39 2011 From: mtang at stanford.edu (Mary Tang) Date: Mon, 12 Sep 2011 12:02:39 -0700 Subject: ALD HfO2/Ge wet etch at wbgen In-Reply-To: <4E6E4D56.3000908@stanford.edu> References: <009501cc6f54$fdfa5840$f9ef08c0$@stanford.edu> <4E6E4D56.3000908@stanford.edu> Message-ID: <4E6E574F.30300@stanford.edu> Hi again -- Sorry, now I'm really reading your paper -- did you want to etch in an Ar or N2 environment?? Mary On 9/12/2011 11:20 AM, Mary Tang wrote: > Hi Aryan -- > > I take it you really mean wbgeneral as opposed to wbgen2? If so, > wbgeneral should be fine. You will need to make sure your labware is > clean if you want your samples to remain clean. > > If you mean wbgen2, then I think we have to clarify what qualifies as > clean on this bench, since I don't believe Hf has been used on this > before. > > Please confirm which bench. > > Thanks, > > Mary > > On 9/9/2011 6:00 PM, Aryan Hazeghi wrote: >> Hello, >> >> >> >> I would like to wet etch HfO2 (ALD in Fiji-L clean chamber) /Ge at >> wbgen. >> I will be using 50:1 DI:HF (please see the attached paper as one >> example.) >> The reason I am choosing wet etch is because this is a thin film >> (50-70A) >> functioning as gate oxide. The purpose of my research is to study the >> interface and bulk properties modification of this film when exposed >> to a >> low temperature, high radical density plasma at low power (TEL SPA.) >> Hence >> the film need be preserved as much as possible and not exposed to other >> plasma that might interfere with analysis of the effects of the TEL SPA >> plasma. My feature size is ~1e2 um and not critical. I have not found a >> labmember using HfO2/Ge wet etch at this wetbench so I would like to >> confirm with specmat. I would like to know what draining procedure I >> should follow. >> >> Thank you, >> >> >> >> Best, >> >> Aryan >> >> >> >> Aryan Hazeghi >> >> Stanford Nanofabrication Facility >> >> 304X Paul G. Allen >> >> 420 Via Palou Mall >> >> Stanford, CA 94305 >> >> 650-391-6509 >> >> >> > > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility Paul G. Allen Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From hazeghi at stanford.edu Mon Sep 12 12:15:57 2011 From: hazeghi at stanford.edu (Aryan Hazeghi) Date: Mon, 12 Sep 2011 12:15:57 -0700 (PDT) Subject: ALD HfO2/Ge wet etch at wbgen In-Reply-To: <4E6E574F.30300@stanford.edu> Message-ID: <1115659270.1411446.1315854957286.JavaMail.root@zm06.stanford.edu> Hi Mary, I'm sorry for the confusion, I mean wbgeneral. I need etching on the bench top just using the standard exhaust system and clean containers, no need to be connected to a load lock for my purpose. Peter provided me with the info for the containers that I have to use and the draining. Thanks all, Aryan ----- Original Message ----- From: "Mary Tang" To: "Aryan Hazeghi" Cc: specmat at snf.stanford.edu, "Peter Griffin" , "Uli Thumser" Sent: Monday, September 12, 2011 12:02:39 PM Subject: Re: ALD HfO2/Ge wet etch at wbgen Hi again -- Sorry, now I'm really reading your paper -- did you want to etch in an Ar or N2 environment?? Mary On 9/12/2011 11:20 AM, Mary Tang wrote: > Hi Aryan -- > > I take it you really mean wbgeneral as opposed to wbgen2? If so, > wbgeneral should be fine. You will need to make sure your labware is > clean if you want your samples to remain clean. > > If you mean wbgen2, then I think we have to clarify what qualifies as > clean on this bench, since I don't believe Hf has been used on this > before. > > Please confirm which bench. > > Thanks, > > Mary > > On 9/9/2011 6:00 PM, Aryan Hazeghi wrote: >> Hello, >> >> >> >> I would like to wet etch HfO2 (ALD in Fiji-L clean chamber) /Ge at >> wbgen. >> I will be using 50:1 DI:HF (please see the attached paper as one >> example.) >> The reason I am choosing wet etch is because this is a thin film >> (50-70A) >> functioning as gate oxide. The purpose of my research is to study the >> interface and bulk properties modification of this film when exposed >> to a >> low temperature, high radical density plasma at low power (TEL SPA.) >> Hence >> the film need be preserved as much as possible and not exposed to other >> plasma that might interfere with analysis of the effects of the TEL SPA >> plasma. My feature size is ~1e2 um and not critical. I have not found a >> labmember using HfO2/Ge wet etch at this wetbench so I would like to >> confirm with specmat. I would like to know what draining procedure I >> should follow. >> >> Thank you, >> >> >> >> Best, >> >> Aryan >> >> >> >> Aryan Hazeghi >> >> Stanford Nanofabrication Facility >> >> 304X Paul G. Allen >> >> 420 Via Palou Mall >> >> Stanford, CA 94305 >> >> 650-391-6509 >> >> >> > > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility Paul G. Allen Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mbaran at stanford.edu Fri Sep 16 10:05:35 2011 From: mbaran at stanford.edu (Maureen Baran) Date: Fri, 16 Sep 2011 10:05:35 -0700 Subject: Chemical Order In-Reply-To: References: Message-ID: <002901cc7492$d9b22600$8d167200$@edu> Dear Margo, I believe you need to talk with Mahnaz Mansourpour because she is in charge of all new chemicals coming into the lab. Her email is mahnaz at stanford.edu and her direct number is 650-725-3668. Maureen Maureen Baran Stanford Nanofabrication Facility Lab Services Administrator mbaran at stanford.edu 650-725-3664 -----Original Message----- From: Culp, Margo Ann [mailto:mculp at slac.stanford.edu] Sent: Friday, September 16, 2011 9:39 AM To: Kukreja, Roopali; mbaran at snf.stanford.edu Subject: FW: Chemical Order Maureen, Can you please provide the EH&S coordinator for the CIS building (SNF). I have a student here that would like to purchase chemicals that will be stored in this building. Our current process for storing chemicals in the Moore and McCullough Bldg is to work with the EH&S coordinator to approve storage and usage of chemicals. We place orders through HAAS and they also work with an EH&S team for approval. Please get back to when you get a chance, so I can process this order for Roopali Kukreja. Thanks, Margo -----Original Message----- From: Kukreja, Roopali Sent: Thursday, September 15, 2011 3:17 PM To: Culp, Margo Ann Subject: Chemical Order Hello Margo, These are the two chemicals I would like to order. You can use charge number 197468 I need them for my processes at clean-room at Stanford Nanofabrication Facility (cleanroom at Stanford) in CIS Building. Would it be possible to get them shipped directly to receiving of CIS/Paul Allen Building? 1. B81611-12 ProTEK B3 Primer, .25 LITER 2. B81613-12 ProTEK B3 Protective Coating (B3-25), .25 LITER I think Brewer Science is the company to order these two. I have also attached a Technical sheet about this product with this email. Please, let me know if you need any other information from me. Thank You From Roopali Kukreja 3rd Yr Graduate Student Department of Material Sc. Stanford University Phone No. - 650 926 2249 From Salowitz at stanford.edu Wed Sep 21 08:48:03 2011 From: Salowitz at stanford.edu (Nathan Salowitz) Date: Wed, 21 Sep 2011 08:48:03 -0700 Subject: MgO and etchant Message-ID: <4E7A0733.8090207@stanford.edu> Hi Specmat, As part of my continuing research I would like to bring a new material into the SNF, it is a Magnesium Oxide ceramic (MgO2), an MSDS for the solid ceramic and for the powder form is attached. (I will only be using the solid, but that MSDS is lacking detail) The intention is to etch it with Hydrochloric acid (HCl) or Phosphoric Acid (H3PO4) at wetbench general. 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Name: MgO MSDS.pdf Type: application/pdf Size: 230408 bytes Desc: not available URL: From jprovine at stanford.edu Fri Sep 23 09:08:55 2011 From: jprovine at stanford.edu (J Provine) Date: Fri, 23 Sep 2011 09:08:55 -0700 Subject: cleanliness of ald films Message-ID: hello specmat, there is a growing interest in the ability to certify as "Clean" some of the films leaving the savannah and fiji-l ald chambers. it should also be noted that in addition to the folks hopping on this hopeful bandwagon, no one is getting off, indicating this is a serious and sustained interest. the desires include but are not limited to: - wanting to use ALD oxides as etch masks in clean etchers like stsetch2 and P5000 - need of RTA for various ald oxides (including hafnia to improve HF etch resistance) (a semi-clean rta was removed recently and the new pathway for this is unclear to users) - desire to include high temperature ALD films in extremely clean systems like the epi reactor and the diffusion furnaces. what are the desired experiments to verify the cleanliness level and produce a suitable protocol for cleaning? how was the spectrum ald determined to be clean? ideally these ald reactors would work in a semi-clean in -> semi-clean out and clean in -> clean out fashion. there are a number of students and researchers willing to help perform and pay for the experiments as determined. thank you. j -------------- next part -------------- An HTML attachment was scrubbed... URL: From roopalik at stanford.edu Mon Sep 26 08:54:44 2011 From: roopalik at stanford.edu (Roopali Kukreja) Date: Mon, 26 Sep 2011 08:54:44 -0700 (PDT) Subject: FePt Alloy Etching In-Reply-To: <1137398914.1770949.1317052293651.JavaMail.root@zm06.stanford.edu> Message-ID: <2076071692.1771104.1317052484214.JavaMail.root@zm06.stanford.edu> Hello All, I have a process which requires metal etching in a particular pattern (produced by photomask). I was wondering would this be possible to do with dry etching on dryteks at SNF? or we need to do a wet etching, but in case of wet etching would the photoresist survive the wet-etch? The metal I want to etch is 100nm Fe-Pt (50:50 approx) Alloy with 40 Angstroms of carbon as capping layer. Thanks a lot for your help. From Roopali -- From Roopali Kukreja PhD Candidate Material Science and Engg. Stanford University From mark.dante at thinsilicon.com Mon Sep 26 11:49:26 2011 From: mark.dante at thinsilicon.com (Mark Dante) Date: Mon, 26 Sep 2011 11:49:26 -0700 Subject: Fwd: new materials In-Reply-To: References: Message-ID: Hi, I submitted several materials to be approved for clean room use about 1 month ago. Do you have any idea when I will be hearing back about these materials? I'm very anxious to get this project started with the help of SNF. My previous email, along with the required documentaiton is attached below, Mark Dante ---------- Forwarded message ---------- From: Mark Dante Date: Tue, Aug 30, 2011 at 4:20 PM Subject: new materials To: SpecMat at snf.stanford.edu Hello, I'd like to submit the following substrate and silica nanoparticle solution for use in the SNF. Please let me know if I need to provide you with any other information. Thanks so much. Mark Dante, Ph.D. Scientist/Project Manager ThinSilicon Corporation 1400 N. Shoreline Blvd, Suite B-3 Mountain View, CA 94043 (515) 451-1392 -- Mark Dante Scientist/Project Manager ThinSilicon Corp. 1400 N Shoreline Blvd, Suite B-3 Mountain View, CA 94043 Office: 650-937-0004 Fax: 650-937-0005 -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: SpecMat Request for a-Si and mc-Si solar cells made at ThinSilicon Corp..docx Type: application/vnd.openxmlformats-officedocument.wordprocessingml.document Size: 12431 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: SpecMat Request for Silica nanoparticles solutions in DI water.docx Type: application/vnd.openxmlformats-officedocument.wordprocessingml.document Size: 12835 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Silica microbeads MSDS.pdf Type: application/pdf Size: 59319 bytes Desc: not available URL: From mtang at stanford.edu Mon Sep 26 12:06:24 2011 From: mtang at stanford.edu (Mary Tang) Date: Mon, 26 Sep 2011 12:06:24 -0700 Subject: Fwd: new materials In-Reply-To: References: Message-ID: <4E80CD30.4080702@stanford.edu> Hi Mark -- My sincere apologies. I usually handle nanoparticle requests, but must have completely missed your previous email, so you haven't heard from us. We don't generally allow nanoparticle solutions into the cleanroom or cleanroom processing tools though there are a few exceptions. For spin coating, we don't allow silica nanoparticle solutions in the cleanroom tools because it is remarkably difficult to keep them clean and avoid have them redeposit on other peoples' substrates. So, for what you describe here, we have a spin coater located outside the lab, in the "wafersaw" room. It is not really clean by microcontamination standards, but it is ventilated and the air is filtered. Mahnaz Mansourpour trains on this system. It's a nice, manual, Laurell coater (better and newer than the general spinner inside the lab.) By the way, are you trying to create a monolayer of silica particles? If so, you should make sure to get surface-modified beads -- either all with carboxylate (negative) or amine (positive) chemical groups. The charge really helps a lot in distributing particles and prevents their clumping. Unless you already have a protocol of your own, I may be able to dig up a couple from people who have done it here. Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility Paul G. Allen Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu On 9/26/2011 11:49 AM, Mark Dante wrote: > Hi, > > I submitted several materials to be approved for clean room use about 1 > month ago. Do you have any idea when I will be hearing back about these > materials? I'm very anxious to get this project started with the help of > SNF. My previous email, along with the required documentaiton is attached > below, > > Mark Dante > > ---------- Forwarded message ---------- > From: Mark Dante > Date: Tue, Aug 30, 2011 at 4:20 PM > Subject: new materials > To: SpecMat at snf.stanford.edu > > > Hello, > > I'd like to submit the following substrate and silica nanoparticle solution > for use in the SNF. Please let me know if I need to provide you with any > other information. Thanks so much. > > Mark Dante, Ph.D. > Scientist/Project Manager > ThinSilicon Corporation > 1400 N. Shoreline Blvd, Suite B-3 > Mountain View, CA 94043 > (515) 451-1392 > > > From mahnaz at stanford.edu Mon Sep 26 13:44:46 2011 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Mon, 26 Sep 2011 13:44:46 -0700 Subject: Fwd: new materials In-Reply-To: <4E80CD30.4080702@stanford.edu> References: <4E80CD30.4080702@stanford.edu> Message-ID: <4E80E43E.8050605@stanford.edu> Hi mark, I have to apologize as well, I do not recall your email at all. Please let us know what is your plan? Mary pretty much explained it all. You need to sign up for a safety class/tour and then after one more class called " all litho", you will be qualified to get train on Laurell out side. So let us know of your plan mahnaz On 9/26/2011 12:06 PM, Mary Tang wrote: > Hi Mark -- > > My sincere apologies. I usually handle nanoparticle requests, but > must have completely missed your previous email, so you haven't heard > from us. > > We don't generally allow nanoparticle solutions into the cleanroom or > cleanroom processing tools though there are a few exceptions. For > spin coating, we don't allow silica nanoparticle solutions in the > cleanroom tools because it is remarkably difficult to keep them clean > and avoid have them redeposit on other peoples' substrates. > > So, for what you describe here, we have a spin coater located outside > the lab, in the "wafersaw" room. It is not really clean by > microcontamination standards, but it is ventilated and the air is > filtered. Mahnaz Mansourpour trains on this system. It's a nice, > manual, Laurell coater (better and newer than the general spinner > inside the lab.) > > By the way, are you trying to create a monolayer of silica particles? > If so, you should make sure to get surface-modified beads -- either > all with carboxylate (negative) or amine (positive) chemical groups. > The charge really helps a lot in distributing particles and prevents > their clumping. Unless you already have a protocol of your own, I may > be able to dig up a couple from people who have done it here. > > Mary > > From mahnaz at stanford.edu Mon Sep 26 13:45:43 2011 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Mon, 26 Sep 2011 13:45:43 -0700 Subject: Silica Particles In-Reply-To: References: Message-ID: <4E80E477.8060805@stanford.edu> Hi Mark -- My sincere apologies. I usually handle nanoparticle requests, but must have completely missed your previous email, so you haven't heard from us. We don't generally allow nanoparticle solutions into the cleanroom or cleanroom processing tools though there are a few exceptions. For spin coating, we don't allow silica nanoparticle solutions in the cleanroom tools because it is remarkably difficult to keep them clean and avoid have them redeposit on other peoples' substrates. So, for what you describe here, we have a spin coater located outside the lab, in the "wafersaw" room. It is not really clean by microcontamination standards, but it is ventilated and the air is filtered. Mahnaz Mansourpour trains on this system. It's a nice, manual, Laurell coater (better and newer than the general spinner inside the lab.) By the way, are you trying to create a monolayer of silica particles? If so, you should make sure to get surface-modified beads -- either all with carboxylate (negative) or amine (positive) chemical groups. The charge really helps a lot in distributing particles and prevents their clumping. Unless you already have a protocol of your own, I may be able to dig up a couple from people who have done it here. Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility Paul G. Allen Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu On 9/26/2011 11:49 AM, Mark Dante wrote: > Hi, > > I submitted several materials to be approved for clean room use about 1 > month ago. Do you have any idea when I will be hearing back about these > materials? I'm very anxious to get this project started with the help of > SNF. My previous email, along with the required documentaiton is attached > below, > > Mark Dante > > ---------- Forwarded message ---------- > From: Mark Dante > Date: Tue, Aug 30, 2011 at 4:20 PM > Subject: new materials > To: SpecMat at snf.stanford.edu > > > Hello, > > I'd like to submit the following substrate and silica nanoparticle solution > for use in the SNF. Please let me know if I need to provide you with any > other information. Thanks so much. > > Mark Dante, Ph.D. > Scientist/Project Manager > ThinSilicon Corporation > 1400 N. Shoreline Blvd, Suite B-3 > Mountain View, CA 94043 > (515) 451-1392 > > > From carini at slac.stanford.edu Mon Sep 26 14:18:50 2011 From: carini at slac.stanford.edu (Carini, Gabriella) Date: Mon, 26 Sep 2011 14:18:50 -0700 Subject: completion of partially processed wafers In-Reply-To: <22C701E3-3EBD-462A-BA26-42B2BB36A0E8@slac.stanford.edu> References: ,<22C701E3-3EBD-462A-BA26-42B2BB36A0E8@slac.stanford.edu> Message-ID: <151C8E57-0C1D-4969-9218-A9E2B12E0B9F@slac.stanford.edu> Hello, I recently joined SLAC and became SNF labmember. As in my previous position at BNL, I am involved with semiconductor processing for x-ray detectors and as I moved here I would like to have the possibility to complete 4 wafers I had started processing sometime ago at BNL. The devices I'm trying to complete at SNF have been designed and developed at BNL for the XPP instrument at LCLS (SLAC). We call them XAMPS (X-ray Active Matrix Pixel Sensor). Up to their current status the wafers have been entirely processed at BNL, Instrumentation Division, Semiconductor Detector Development and Processing Lab. This is a small class-100 cleanroom (600 sq ft) entirely developed for the fabrication of silicon detectors. These devices are made on high-resistivity (>4kOhm cm) silicon wafers (FZ). To maintain the quality and achieve the needed performances a strict control of contaminants is implemented and most of the tools are custom-made to avoid damages during wafer handling: in fact all the devices require double-side processing. Only qualified stuff members are allowed to work in this cleanroom (no more than 2 people simultaneously and 4-5 overall). The only substrate material allowed is high-resistivity silicon. The only dielectrics are SiO2 (thermal and PECVD) and Si3N4 (PECVD). The only metal allowed is AlSi (1%) by sputtering. The wafers have the backside almost completed (metal already patterned - need only overglass) and the frontside at metal1: that is, I have to deposit a dielectric, open the vias, deposit and pattern the second metal and put the overglass. I have already identified and took most of the trainings on the tools I plan to use for this process. I believe that the whole process is entirely CMOS compatible and the wafers do not present any harm to the SNF community. Please let me know if I can proceed or if you need more info. Thanks, Ga. From popomoo at stanford.edu Mon Sep 26 15:12:13 2011 From: popomoo at stanford.edu (Sangmoo Jeong) Date: Mon, 26 Sep 2011 15:12:13 -0700 (PDT) Subject: a new chemical usage request by Sangmoo Jeong In-Reply-To: Message-ID: <1922350176.589130.1317075133180.JavaMail.root@zm02.stanford.edu> Hi, SpecMat committee. I want to use a new chemical, which is a conductive polymer, in SNF. I attach two files: one is for the general information for my plan with this chemical, and the other one is its MSDS information. If you have any questions, please let me know. I will answer it asap. Thanks. Sangmoo Jeong -------------- next part -------------- A non-text attachment was scrubbed... Name: MSDS_PH500.pdf Type: application/pdf Size: 1600442 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Specmat_Sangmoo Jeong.docx Type: application/vnd.openxmlformats-officedocument.wordprocessingml.document Size: 15038 bytes Desc: not available URL: From mtang at stanford.edu Tue Sep 27 08:10:56 2011 From: mtang at stanford.edu (Mary Tang) Date: Tue, 27 Sep 2011 08:10:56 -0700 Subject: Process change request for sts dep Message-ID: <4E81E780.8050406@stanford.edu> Hi all -- Here's a request here from Dong Rip. This is not the first time this has been discussed (Jim Kruger was talking about this a few months ago) though I don't think it was pursued at the time. This is worth exploring. Any thoughts? Mary -------- Original Message -------- Subject: how to request specmat? Date: Tue, 27 Sep 2011 07:36:08 -0700 (PDT) From: Dong Rip Kim To: mtang at stanford.edu CC: dongrip at stanford.edu Hi Mary, I'd like to request specmat to approve the change of maximum plasma power (low-frequency mode) of sts PECVD. Can you advise me how to submit this request to specmat? I'm now doing some experiments about ammonia plasma treatment (no deposition-related) in low-frequency RF mode. Currently, the maximum RF plasma power of low-frequency mode in sts PECVD is set as 100 W when flowing NH3 only, although the current low-frequency plasma power source has the 600 W capacity. Can we increase the current maximum power setting as 100 W to 300 W or 500 W? I spoke with Jeannie and Jim Haydon on this, and they suggested me to request this to specmat. Thank you, Dong Rip -------------- next part -------------- An HTML attachment was scrubbed... URL: From mahnaz at stanford.edu Wed Sep 28 08:15:09 2011 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Wed, 28 Sep 2011 08:15:09 -0700 Subject: a new chemical usage request by Sangmoo Jeong In-Reply-To: <1922350176.589130.1317075133180.JavaMail.root@zm02.stanford.edu> References: <1922350176.589130.1317075133180.JavaMail.root@zm02.stanford.edu> Message-ID: <4E8339FD.1090706@stanford.edu> HI Sangmoo, This is to let you know that you are allowed to bring the chemical in ( although in your case, the chemical was already In). Please read the attachment and followed it. You need to come to my office and log your chemical in the binder and get a yellow label for the chemical. Even though your chemical is not stored in our facility because is traveling back and forth we need to label it. If any part of your procedure changes, let us know. As we talked the chemical only will get dispensed at headway. mahnaz On 9/26/2011 3:12 PM, Sangmoo Jeong wrote: > Hi, SpecMat committee. > > > I want to use a new chemical, which is a conductive polymer, in SNF. > I attach two files: one is for the general information for my plan with this chemical, and the other one is its MSDS information. > > > If you have any questions, please let me know. > I will answer it asap. > > Thanks. > > > Sangmoo Jeong -------------- next part -------------- A non-text attachment was scrubbed... Name: SU-8 Handling Protocol2.doc Type: application/msword Size: 32768 bytes Desc: not available URL: