ALD HfO2/Ge wet etch at wbgen

Mary Tang mtang at stanford.edu
Mon Sep 12 12:02:39 PDT 2011


Hi again --

Sorry, now I'm really reading your paper -- did you want to etch in an 
Ar or N2 environment??

Mary

On 9/12/2011 11:20 AM, Mary Tang wrote:
> Hi Aryan --
>
> I take it you really mean wbgeneral as opposed to wbgen2?  If so, 
> wbgeneral should be fine.  You will need to make sure your labware is 
> clean if you want your samples to remain clean.
>
> If you mean wbgen2, then I think we have to clarify what qualifies as 
> clean on this bench, since I don't believe Hf has been used on this 
> before.
>
> Please confirm which bench.
>
> Thanks,
>
> Mary
>
> On 9/9/2011 6:00 PM, Aryan Hazeghi wrote:
>> Hello,
>>
>>
>>
>> I would like to wet etch HfO2 (ALD in Fiji-L clean chamber) /Ge at 
>> wbgen.
>> I will be using 50:1 DI:HF (please see the attached paper as one 
>> example.)
>> The reason I am choosing wet etch is because this is a thin film 
>> (50-70A)
>> functioning as gate oxide. The purpose of my research is to study the
>> interface and bulk properties modification of this film when exposed 
>> to a
>> low temperature, high radical density plasma at low power (TEL SPA.) 
>> Hence
>> the film need be preserved as much as possible and not exposed to other
>> plasma that might interfere with analysis of the effects of the TEL SPA
>> plasma. My feature size is ~1e2 um and not critical. I have not found a
>> labmember using HfO2/Ge wet etch at this wetbench so I would like to
>> confirm with specmat. I would like to know what draining procedure I
>> should follow.
>>
>> Thank you,
>>
>>
>>
>> Best,
>>
>> Aryan
>>
>>
>>
>> Aryan Hazeghi
>>
>> Stanford Nanofabrication Facility
>>
>> 304X Paul G. Allen
>>
>> 420 Via Palou Mall
>>
>> Stanford, CA 94305
>>
>> 650-391-6509
>>
>>
>>
>
>


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu




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