From dton at sunray.snffab.stanford.edu Wed Oct 3 17:58:10 2001 From: dton at sunray.snffab.stanford.edu (Dinh Ton) Date: Wed, 3 Oct 2001 17:58:10 -0700 (PDT) Subject: SiNx Deposition Message-ID: Hi y'all, we did a few nitride runs on the STS PECVD, run #1724 & 1725. Here is the number : Run 1724 : 5 mins dep, 2000 2% SiH4, 35 NH3 Hi Rf : 4.5 sec, Low Rf : 2.0 sec Result : index = 2.035, thickness = 503 A stress = +200 MPa (tensile) Run 1725 : same as above, with low Rf = 2.5sec stress = -200 MPa (compressive) Regards, Dinh From dton at sunray.snffab.stanford.edu Thu Oct 4 15:49:10 2001 From: dton at sunray.snffab.stanford.edu (Dinh Ton) Date: Thu, 4 Oct 2001 15:49:10 -0700 (PDT) Subject: STS PECVD : Nitride Runs Message-ID: Okie, I did more run tests on the system. Sets of runs #1725 & 1726. Basic recipe of 650 mT, 350 C, 2000 sccm 2%silane, 35 sccm NH3. See detail on recipe "dt_ni500.set" Results Run Low RF(s) Hi RF(s) Stress(MPa) n t(A) 1 2.5 4.5 -180 2.034 478 2 2.2 4.5 -140 2.048 474 3 1.8 4.5 -95 2.060 466 4 1.5 4.5 -70 2.069 477 5 1.5 6.0 5 2.082 485 6 1.5 7.5 60 2.093 483 Regards, Dinh From flannery at stanford.edu Fri Oct 5 18:28:00 2001 From: flannery at stanford.edu (Anthony Flannery) Date: Fri, 05 Oct 2001 18:28:00 -0700 Subject: Carbide NExt weekend Message-ID: <3BBE5E20.21EFDCB6@stanford.edu> Hi all, I will be reserving the machine from Friday at 8:00 PM until Monday morning at 8:00 AM to run carbide. During this time no one else may use the machine. Any questions or concerns, let me know. Tony Flannery From jhaydon at snf.stanford.edu Mon Oct 8 13:59:20 2001 From: jhaydon at snf.stanford.edu (Jim Haydon) Date: Mon, 08 Oct 2001 13:59:20 -0700 Subject: 2% silane with nitrogen shut down Message-ID: <3BC213A8.8A84597D@snf.stanford.edu> To all, The 2% silane with nitrogen bottle for the STS Dep has been changed and is currently being leak checked and should be available for use tomorrow. Jim From dton at sunray.snffab.stanford.edu Thu Oct 11 18:36:59 2001 From: dton at sunray.snffab.stanford.edu (Dinh Ton) Date: Thu, 11 Oct 2001 18:36:59 -0700 (PDT) Subject: Doing ETCHBAK3 Message-ID: Chamber is dirty. I am doing an etchbak3 to clean it up a bit. If you plan to use it next, please continue the cleaning process. Thanks, Dinh From flannery at stanford.edu Mon Oct 15 15:34:16 2001 From: flannery at stanford.edu (Anthony Flannery) Date: Mon, 15 Oct 2001 15:34:16 -0700 Subject: PECVD Maintenance and Operator responsibilities Message-ID: <3BCB6468.4F73E3CF@stanford.edu> Hi Gang, I'm sending this out to reinforce a couple of points that all operators should be following. This machine is VERY sensitive to particles and leaks, and it requires concerted effort on the part of every operator to maintain high quality depositions. Specifically, leaks and cleaning. Leaks ----------- When I opened the chamber Friday night there was a large yellow dusty blotch on the back sidewall. This is indicative of leaks and is a result of the silane interacting with oxygen. This is not o.k. It should not be ignored by the operator and should be written up as a problem whenever it is observed. After seeing this, I checked all the bolts on the chamber and found that the bolts holding the clamp in the back of the chamber (where the dusting was) were loose. I tightened these, and I had no leak problems. These particles cause a problem for every user who uses the machine. Please make note of this and write it up as a problem if you see it again. Additionally, when leak checks were done in the past, it was found that it took 15 minutes before the seals allowed the chamber to form a good tight vacuum. What that means is that if you are running a critical nitride or oxide, the quality of your film will improve greatly if you wait 15 minutes after you close the lid before you start your process. This wait period is not required, but any amount you wait after closing the lid allows the seals to stabilize and will improve your film and decrease dusting. Cleaning ------------ Operators are not spending enough time cleaning the chamber. Supposedly the chamber had been cleaned that morning, but when I went to wipe it down after the etchback, found a lot of dark particles on the edge of the showerhead, on the top surface, and on the chamber sidewall. This should not have been. The first IPA wipe following an etchback should probably take you 10-15 minutes. If you are doing it in a shorter time, you are not doing it correctly. Again, these particles affect everyones work, and should not be there. Take your time, especially with the first IPA wipe. It's critical to keeping particles out of the films. This is a 15 year old prototype tool. It'll never get upgraded and not even STS knows all the ins and outs of it. When it's in good shape, it works great and produces high quality films. When it gets ignored it produces crap. The choice, as they say, is yours. Tony Flannery From jperez at snf.stanford.edu Mon Oct 22 12:09:31 2001 From: jperez at snf.stanford.edu (Jeannie Perez) Date: Mon, 22 Oct 2001 12:09:31 -0700 Subject: STS Available Message-ID: <3BD46EEB.2A97A2FF@snf.stanford.edu> I am giving up my time on the STS this afternoon, because there was a no show earlier and I was about to use it in the A.M. Jeannie From dton at sunray.snffab.stanford.edu Thu Oct 25 20:01:04 2001 From: dton at sunray.snffab.stanford.edu (Dinh Ton) Date: Thu, 25 Oct 2001 20:01:04 -0700 (PDT) Subject: Cleaning chamber Message-ID: Hi y'all, The chamber has about 4.2um of deposited film. I started the etchback3, if you have time or plan to use it, please continue and finish up the process. Thanks, Dinh