From kidonge at stanford.edu  Thu Jan 17 18:18:13 2002
From: kidonge at stanford.edu (Kyle Evan Hammerick)
Date: Thu, 17 Jan 2002 18:18:13 -0800 (PST)
Subject: STS done early free until 8:30pm
Message-ID: <200201180218.g0I2ICM07767@webmail.Stanford.EDU>

Done early STS free until 8:30pm





From jperez at snf.stanford.edu  Wed Jan 23 15:44:41 2002
From: jperez at snf.stanford.edu (Jeannie Perez)
Date: Wed, 23 Jan 2002 15:44:41 -0800
Subject: Next STS PECVD user
Message-ID: <3C4F4AE9.215F92B1@snf.stanford.edu>

Hi everyone,
For the next user depositing Silicon Nitride, please record results in
the logbook especially the refractive index.

The STS PECVD system had a SiH4 / N2 cylinder change. The way I
qualified it was by;
1. Did a clean (only because it was close to 3.0 um).
2. Ran an oxide recipe that had been ran Jan. 10th.
3. Ran two four inch wafers for 2 minutes, Refractive index 1.458.
                              top  849 A
                         middle  876 A           Avg. 853 A delta 43 A
                               flat  833 A
    Second wafer butted up to the flat of the first wafer..
                              flat  927
                        middle  943                Avg. 943 A, delta 34
A
                             top  961
Any questions or suggestions, please feel free to talk to me.
Jeannie Perez
723-7997





From yjlin at stanford.edu  Fri Jan 25 17:42:29 2002
From: yjlin at stanford.edu (Yu-Ju Lin)
Date: Fri, 25 Jan 2002 17:42:29 -0800 (PST)
Subject: Uniformity of SiN deposition with STS
Message-ID: <Pine.LNX.4.33.0201251740200.871-100000@cardinal5.Stanford.EDU>

Hi all,

I have a question that would it be OK to put four 4" wafers in STS for SiN
depostion in one run? What is the uniformity between different wafers? My
target thickness is 1um.

Thanks a lot,

Yu-ju