Test Results for Nitride, Low Freq. Oxide and High Freq. Oxide

[Jeannie Perez]

Hi Everyone,
To my amazement after major PM changes to the STS system (new shower 
head and realignment of Platen and Thermometer), the test results 
were good. The GOOD news is that the Deposition Rate on all three 
tests have increased, so take caution. I've never seen them so high. 
Probably due to the alignment of the Platen. If you have concerns, 
please notify me. I'll still be running more tests. Wafers measured on Woollam.
Low Frequency, four wafer averages;
Back      Front       Left side       Right side Position on Platen
1798       1787        1791     1761   (Thickness)
1.47        1.47         1.47   1.47    (Index of Refraction)
0.847%    0.96%     0.84%        0.87%  (range)
10            11,2        10             9.1 (std. dev.)

Low Freq. dep. rate is ~380 A / minute
Deposition Time was 4' 35"


High Frequency, four wafer averages;

Back      Front      Left side       Right side Position on Platen
3864       3882       3918            3918 A   (Thickness)
1.46        1.46       1.46                 1.46  (Index of Refraction)
2.47%     1,40%    3,5%            3%  (range)
57          30           78             72   (std Dev.)

High frequency dep. rate is ~390 A / minute
Deposition Time was 10 minutes.

Nitride Deposition for ~13.5 minutes- dep rate is ~ 126 to 130 A / minute
Only measured one of four tests on Woollam. Ed Myers will work on recipe.
Average thickness 1761A,  Didn't give the correct Index of 
Refraction. Ed figured out to be 1.97.

Regards,





Jeannie Perez
Science and Engineering Technician
Stanford Nanofabrication Facility
Stanford University
Tel: (650) 723-7997
Fax: (650) 725-6278

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