From jperez at snf.stanford.edu  Thu Jul 10 15:32:05 2008
From: jperez at snf.stanford.edu (Jeannie Perez)
Date: Thu, 10 Jul 2008 15:32:05 -0700
Subject: Nitride high frequency isn't working correctly
Message-ID: <6.2.5.6.2.20080710153018.01d0dec0@snf.stanford.edu>

High frequency isn't coming on every time.

Jeannie Perez
Science and Engineering Technician
Stanford Nanofabrication Facility
Stanford University
Tel: (650) 723-7997
Fax: (650) 725-6278




From robinhmb at yahoo.com  Thu Jul 24 13:26:09 2008
From: robinhmb at yahoo.com (Robin King)
Date: Thu, 24 Jul 2008 13:26:09 -0700 (PDT)
Subject: STS in clean cycle
Message-ID: <494118.19019.qm@web58706.mail.re1.yahoo.com>

Finished a little early and started the clean.


      


From filip at stanford.edu  Wed Jul 30 01:56:18 2008
From: filip at stanford.edu (Filip Crnogorac)
Date: Wed, 30 Jul 2008 01:56:18 -0700
Subject: oxide roughness results
Message-ID: <20080730015618.68rfgijn54gskgw4@webmail.stanford.edu>

Hi STS users,

here is roughness data for PECVD SiO2 running both the low and high  
frequency recipes (after a chamber clean). All data by 5x5um AFM  
tapping scan & roughness analysis.

std_lfox (tap = 5, not 4)
time = 3:00
deposited = 105.6 nm +-0.03
dep rate = 371 A/min
roughness (rms) = 0.390 nm
Z range = 4.1 nm

std_hfox
time = 3:00
deposited = 104.2 nm +-0.02
dep rate = 347 A/min
roughness (rms) = 0.680 nm
Z range = 8.2 nm

for comparison, thermal SiO2 has rms roughness close to 0.1 nm, while  
bare Si wafer is usually 0.1 nm or less.

Depositing with the chamber not clean gives similar roughness, but  
lower dep rates (352 A/min and 320 A/min).

If anyone would like to see the AFMs let me know.

Take care,

Filip

--------------------------------------
Ph.D. Candidate, Stanford University
Department of Electrical Engineering
Center for Integrated Systems
B-103, 420 Via Palou
Stanford, CA 94305




From jperez at snf.stanford.edu  Thu Jul 31 13:05:36 2008
From: jperez at snf.stanford.edu (Jeannie Perez)
Date: Thu, 31 Jul 2008 13:05:36 -0700
Subject: Deposition rates have dropped, should run a test before
  processing.
Message-ID: <6.2.5.6.2.20080731125725.01c667b8@snf.stanford.edu>

Ran 3 oxide tests today using Hi Freq today. Lili ran three Lo Freq. 
tests yesterday.

Deposition rate has dropped over one hundred angstroms.
Refractive index ok. Average deposition is ~245A/min (oxides). This 
was a clean system


Jeannie Perez
Science and Engineering Technician
Stanford Nanofabrication Facility
Stanford University
Tel: (650) 723-7997
Fax: (650) 725-6278